Texas Instruments TLC271CPWLE, TLC271CPW, TLC271CPSR, TLC271CPS, TLC271CP Datasheet

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D

Input Offset Voltage Drift ...Typically

0.1 µV/Month, Including the First 30 Days

D

Wide Range of Supply Voltages Over
Specified Temperature Range:

0°C to 70°C...3 V to 16 V
–40 °C to 85°C...4 V to 16 V
–55 °C to 125°C...5 V to 16 V

D

Single-Supply Operation

D

Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix
and I-Suffix Types)

D

Low Noise . . . 25 nV/√Hz Typically at
f = 1 kHz (High-Bias Mode)

D

Output Voltage Range includes Negative
Rail

D

High Input Impedance ...10

12

Ω Typ

D

ESD-Protection Circuitry

D

Small-Outline Package Option Also
Available in Tape and Reel

D

Designed-In Latch-Up Immunity

description

The TLC271 operational amplifier combines a
wide range of input offset voltage grades with low
offset voltage drift and high input impedance. In
addition, the TLC271 offers a bias-select mode
that allows the user to select the best combination of power dissipation and ac performance for a particular
application. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset
voltage stability far exceeding the stability available with conventional metal-gate processes.

AVAILABLE OPTIONS

PACKAGE

T

A

VIOmax
AT 25°C

SMALL

OUTLINE

(D)

CHIP

CARRIER

(FK)

CERAMIC

DIP

(JG)

PLASTIC

DIP

(P)

0°C 2 mV TLC271BCD TLC271BCP

0 Cto2 mV

5 mV

TLC271BCD

TLC271ACD

— —

TLC271BCP

TLC271ACP

70°C 10 mV TLC271CD TLC271CP

–40°C 2 mV TLC271BID TLC271BIP

40 Cto2 mV

5 mV

TLC271BID

TLC271AID

— —

TLC271BIP

TLC271AIP

85°C 10 mV TLC271ID TLC271IP

–55°C

to

125°C

10 mV TLC271MD TLC271MFK TLC271MJG TLC271MP

The D package is available taped and reeled. Add R suffix to the device type (e.g.,
TLC271BCDR).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright  1997, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

1
2
3
4

8
7
6
5

OFFSET N1

IN –
IN +

GND

BIAS SELECT
V

DD

OUT
OFFSET N2

D, JG, OR P PACKAGE

(TOP VIEW)

3 2 1 20 19

910111213

4
5
6
7
8

18
17
16
15
14

NC
V

DD

NC
OUT
NC

NC

IN –

NC

IN +

NC

FK PACKAGE

(TOP VIEW)

NC

OFFSET N1

NCNCNC

NC

GND

NC

NC – No internal connection

OFFSET N2

BIAS SELECT

LinCMOS is a trademark of Texas Instruments Incorporated.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

8DEVICE FEATURES

BIAS-SELECT MODE

PARAMETER

†

HIGH MEDIUM LOW

UNIT

P

D

3375 525 50 µW

SR 3.6 0.4 0.03 V/µs
V

n

25 32 68 nV/√Hz

B

1

1.7 0.5 0.09 MHz

A

VD

23 170 480 V/mV

†

Typical at VDD = 5 V, TA = 25°C

description (continued)

Using the bias-select option, these cost-effective devices can be programmed to span a wide range of
applications that previously required BiFET, NFET or bipolar technology. Three offset voltage grades are
available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV)
low-offset version. The extremely high input impedance and low bias currents, in conjunction with good
common-mode rejection and supply voltage rejection, make these devices a good choice for new
state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers,
without the power penalties of bipolar technology . General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The
devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and
inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.

The device inputs and output are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000

V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices
as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of –55°C to 125°C.

bias-select feature

The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels depending
on the level of performance desired. The tradeoffs between bias levels involve ac performance and power
dissipation (see Table 1).

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

3

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

bias-select feature (continued)

Table 1. Effect of Bias Selection on Performance

MODE

TYPICAL PARAMETER VALUES

=

°

=

HIGH BIAS MEDIUM BIAS LOW BIAS

UNIT

T

A

=

25 C, V

DD

= 5

V

RL = 10 kΩ RL = 100 kΩ RL = 1 MΩ

P

D

Power dissipation 3.4 0.5 0.05 mW
SR Slew rate 3.6 0.4 0.03 V/µs
V

n

Equivalent input noise voltage at f = 1 kHz 25 32 68 nV/√Hz
B

1

Unity-gain bandwidth 1.7 0.5 0.09 MHz

φ

m

Phase margin 46° 40° 34°
A

VD

Large-signal differential voltage amplification 23 170 480 V/mV

bias selection

Bias selection is achieved by connecting the bias select pin to one of three voltage levels (see Figure 1). For
medium-bias applications, it is recommended that the bias select pin be connected to the midpoint between the
supply rails. This procedure is simple in split-supply applications, since this point is ground. In single-supply
applications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use of
large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However,
large-value resistors used in conjunction with a large-value capacitor require significant time to charge up to
the supply midpoint after the supply is switched on. A voltage other than the midpoint can be used if it is within
the voltages specified in Figure 1.

bias selection (continued)

V

DD

1 MΩ

1 MΩ

0.01 µF

Low

Medium

High

To the Bias
Select Pin

BIAS MODE

BIAS-SELECT VOLTAGE

(single supply)

Low

Medium

High

V

DD

1 V to VDD – 1 V

GND

Figure 1. Bias Selection for Single-Supply Applications

high-bias mode

In the high-bias mode, the TLC271 series features low offset voltage drift, high input impedance, and low noise.
Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation. Unity-gain
bandwidth is typically greater than 1 MHz.

medium-bias mode

The TLC271 in the medium-bias mode features low offset voltage drift, high input impedance, and low noise.
Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of that
consumed by bipolar devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

low-bias mode

In the low-bias mode, the TLC271 features low offset voltage drift, high input impedance, extremely low power
consumption, and high differential voltage gain.

ORDER OF CONTENTS
TOPIC

BIAS MODE

schematic all
absolute maximum ratings all
recommended operating conditions all
electrical characteristics

operating characteristics
typical characteristics

high

(Figures 2 – 33)

electrical characteristics
operating characteristics
typical characteristics

medium

(Figures 34 – 65)

electrical characteristics
operating characteristics
typical characteristics

low

(Figures 66 – 97)

parameter measurement information all
application information all

equivalent schematic

P3

P1

R1

IN –

IN +

P2 R2

P4

R6

N5

R5

C1

N3

N2N1

R3

D1

R4

D2

N4

OFFSET

N1

N2

OFFSET

OUT

GND

R7

N6

BIAS

SELECT

N10

N7

N9

N13

N12

N11

P12

P11

P10

P7A

P8

P9A

P9B

P7B

P6BP6A

P5

V

DD

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

5

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

absolute maximum ratings over operating free-air temperature (unless otherwise noted)

†

Supply voltage, VDD (see Note 1) 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Differential input voltage, VID (see Note 2) ±V

DD

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, V

I

(any input) – 0.3 V to V

DD

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input current, II ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output current, IO ±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Duration of short-circuit current at (or below) 25°C (see Note 3) Unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature, T

A

: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

M suffix – 55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package 260°C. . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.

2. Differential voltages are at IN+ with respect to IN–.

3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).

DISSIPATION RATING TABLE

PACKAGE

TA ≤ 25°C

POWER RATING

DERATING FACTOR

ABOVE TA = 25°C

TA = 70°C

POWER RATING

TA = 85°C

POWER RATING

TA = 125°C

POWER RATING

D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW
FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW
JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW

P 1000 mW 8.0 mW/°C 640 mW 520 mW 200 mW

recommended operating conditions

C SUFFIX I SUFFIX M SUFFIX
MIN MAX MIN MAX MIN MAX

UNIT

Supply voltage, V

DD

3 16 4 16 5 16 V

p

VDD = 5 V –0.2 3.5 –0.2 3.5 0 3.5

Common-mode input voltage, V

IC

VDD = 10 V –0.2 8.5 –0.2 8.5 0 8.5

V

Operating free-air temperature, T

A

0 70 –40 85 –55 125 °C

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

6

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

HIGH-BIAS MODE

electrical characteristics at specified free-air temperature (unless otherwise noted)

TLC271C, TLC271AC, TLC271BC

PARAMETER

TEST

T

A

†

VDD = 5 V VDD = 10 V

UNIT

CONDITIONS

A

MIN TYP MAX MIN TYP MAX

25°C 1.1 10 1.1 10

TLC271C

Full range 12 12

p

V

O

= 1.4 V,

V

= 0 V,

25°C 0.9 5 0.9 5

VIOInput offset voltage

TLC271AC

IC

,

RS = 50 Ω,

Full range 6.5 6.5

mV

RL = 10 kΩ

25°C 0.34 2 0.39 2

TLC271BC

Full range 3 3

α

VIO

Average temperature coefficient
of input offset voltage

25°C to

70°C

1.8 2 µV/°C

p

V

= V

/2,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

ODD

,

VIC = VDD/2

70°C 7 300 7 300

pA

p

V

= V

/2,

25°C 0.6 0.7

p

IIBInput bias current (see Note 4)

ODD

,

VIC = VDD/2

70°C 40 600 50 600

pA

p

25°C

–0.2

to

4

–0.3

to

4.2

–0.2

to

9

–0.3

to

9.2

V

V

ICR

C

ommon-mode input voltage

range (see Note 5)

Full range

–0.2

to

3.5

–0.2

to

8.5

V

25°C 3.2 3.8 8 8.5

V

OH

High-level output voltage

VID = 100 mV ,

0°C 3 3.8 7.8 8.5

V

R

L

= 10

kΩ

70°C 3 3.8 7.8 8.4
25°C 0 50 0 50

V

OL

Low-level output voltage

VID = –100 mV ,

0°C 0 50 0 50

mV

I

OL

=

0

70°C 0 50 0 50
25°C 5 23 10 36

A

VD

Large-signal differential

p

RL = 10 kΩ,

0°C 4 27 7.5 42

V/mV

voltage am lification

See Note 6

70°C 4 20 7.5 32
25°C 65 80 65 85

CMRR Common-mode rejection ratio VIC = V

ICR

min

0°C 60 84 60 88

dB
70°C 60 85 60 88
25°C 65 95 65 95

k

SVR

Supply-voltage rejection ratio

VDD = 5 V to 10 V

0°C 60 94 60 94

dB

(∆VDD/∆VIO)

V

O

= 1.4

V

70°C 60 96 60 96

I

I(SEL)

Input current (BIAS SELECT) V

I(SEL)

= 0 25°C –1.4 –1.9 µA

V

= V

/2

,

25°C 675 1600 950 2000

I

DD

Supply current

V

O

VDD/2,

VIC = VDD/2,

0°C 775 1800 1125 2200

µA

No load

70°C 575 1300 750 1700

†

Full range is 0°C to 70°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically .

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

7

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

HIGH-BIAS MODE

electrical characteristics at specified free-air temperature (unless otherwise noted)

TLC271I, TLC271AI, TLC271BI

PARAMETER

TEST

T

A

†

VDD = 5 V VDD = 10 V

UNIT

CONDITIONS

A

MIN TYP MAX MIN TYP MAX

25°C 1.1 10 1.1 10

TLC271I

Full range 13 13

p

V

O

= 1.4 V,

V

= 0 V,

25°C 0.9 5 0.9 5

VIOInput offset voltage

TLC271AI

IC

,

RS = 50 Ω,

Full range 7 7

mV

RL = 10 kΩ

25°C 0.34 2 0.39 2

TLC271BI

Full range 3.5 3.5

α

VIO

Average temperature coefficient
of input offset voltage

25°C to

85°C

1.8 2 µV/°C

p

V

= V

/2,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

ODD

,

VIC = VDD/2

85°C 24 1000 26 1000

pA

p

V

= V

/2,

25°C 0.6 0.7

p

IIBInput bias current (see Note 4)

ODD

,

VIC = VDD/2

85°C 200 2000 220 2000

pA

Common-mode input

25°C

–0.2

to

4

–0.3

to

4.2

–0.2

to

9

–0.3

to

9.2

V

V

ICR

voltage range (see Note 5)

Full range

–0.2

to

3.5

–0.2

to

8.5

V

25°C 3.2 3.8 8 8.5

V

OH

High-level output voltage

VID = 100 mV ,

–40°C 3 3.8 7.8 8.5

V

R

L

= 10

kΩ

85°C 3 3.8 7.8 8.5
25°C 0 50 0 50

V

OL

Low-level output voltage

VID = –100 mV ,

–40°C 0 50 0 50

mV

I

OL

=

0

85°C 0 50 0 50
25°C 5 23 10 36

A

VD

Large-signal differential

p

RL = 10 kΩ,

–40°C 3.5 32 7 46

V/mV

voltage am lification

See Note 6

85°C 3.5 19 7 31
25°C 65 80 65 85

CMRR Common-mode rejection ratio VIC = V

ICR

min

–40°C 60 81 60 87

dB
85°C 60 86 60 88
25°C 65 95 65 95

k

SVR

Supply-voltage rejection ratio

VDD = 5 V to 10 V

–40°C 60 92 60 92

dB

(∆VDD/∆VIO)

V

O

= 1.4

V

85°C 60 96 60 96

I

I(SEL)

Input current (BIAS SELECT) V

I(SEL)

= 0 25°C –1.4 –1.9 µA

V

= V

/2

,

25°C 675 1600 950 2000

I

DD

Supply current

V

O

VDD/2,

VIC = VDD/2,

–40°C 950 2200 1375 2500

µA

No load

85°C 525 1200 725 1600

†

Full range is –40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

8

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

HIGH-BIAS MODE

electrical characteristics at specified free-air temperature (unless otherwise noted)

TLC271M

PARAMETER

TEST

T

A

†

VDD = 5 V VDD = 10 V

UNIT

CONDITIONS

A

MIN TYP MAX MIN TYP MAX

=

°

p

V

O

= 1.4 V,

V

= 0 V,

25°C

1.1101.1

10

VIOInput offset voltage

IC

,

RS = 50 Ω,

mV

S

RL = 10 kΩ

Full range

12

12

α

VIO

Average temperature coefficient
of input offset voltage

25°C to

125°C

2.1 2.2 µV/°C

p

V

= V

/2,

25°C 0.1 0.1 pA

IIOInput offset current (see Note 4)

ODD

,

VIC = VDD/2

125°C 1.4 15 1.8 15 nA

p

V

= V

/2,

25°C 0.6 0.7 pA

IIBInput bias current (see Note 4)

ODD

,

VIC = VDD/2

125°C 9 35 10 35 nA

Common-mode input voltage

25°C

0

to

4

–0.3

to

4.2

0

to

9

–0.3

to

9.2

V

V

ICR

g

range (see Note 5)

Full range

0

to

3.5

0

to

8.5

V

25°C 3.2 3.8 8 8.5

V

OH

High-level output voltage

VID = 100 mV ,

–55°C 3 3.8 7.8 8.5

V

R

L

= 10

kΩ

125°C 3 3.8 7.8 8.4

25°C 0 50 0 50

V

OL

Low-level output voltage

VID = –100 mV ,

–55°C 0 50 0 50

mV

I

OL

=

0

125°C 0 50 0 50

25°C 5 23 10 36

A

VD

Large-signal differential

p

RL = 10 kΩ,

–55°C 3.5 35 7 50

V/mV

voltage am lification

See Note 6

125°C 3.5 16 7 27

25°C 65 80 65 85

CMRR Common-mode rejection ratio VIC = V

ICR

min

–55°C 60 81 60 87

dB

125°C 60 84 60 86

25°C 65 95 65 95

k

SVR

Supply-voltage rejection ratio

VDD = 5 V to 10 V

–55°C 60 90 60 90

dB

(∆VDD/∆VIO)

V

O

= 1.4

V

125°C 60 97 60 97

I

I(SEL)

Input current (BIAS SELECT) V

I(SEL)

= 0 25°C –1.4 –1.9 µA

V

= V

/2

,

25°C 675 1600 950 2000

I

DD

Supply current

V

O

VDD/2,

VIC = VDD/2,

–55°C 1000 2500 1475 3000

µA

No load

125°C 475 1100 625 1400

†

Full range is –55°C to 125°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

9

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

HIGH-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 5 V

PARAMETER TEST CONDITIONS T

A

TLC271C, TLC271AC,

TLC271BC

UNIT

A

MIN TYP MAX

25°C 3.6

V

I(PP)

= 1 V

0°C 4

RL = 10 kΩ,

p

()

70°C 3

SR

Slew rate at unity gain

C

L

= 20 pF,

See Fi

g

ure 98

25°C 2.9

V/µs

See Figure 98

V

I(PP)

= 2.5 V

0°C 3.1

()

70°C 2.5

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 99

S

,

25°C

25

n

V/√H

z

25°C 320

B

OM

Maximum output-swing bandwidth

VO = VOH ,

CL = 20 pF,

0°C 340

kHz

R

L

= 10 kΩ,

See Figure 98

70°C 260
25°C 1.7

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

0°C

2

MHz

See Figure 100

70°C 1.3
25°C 46°

φ

m

Phase margin

V

I

= 10 mV,

=

p

f

=

B

1

,

0°C 47°

C

L

= 20 F,

See Figure 100

70°C 44°

operating characteristics at specified free-air temperature, VDD = 10 V

PARAMETER TEST CONDITIONS T

A

TLC271C, TLC271AC,

TLC271BC

UNIT

A

MIN TYP MAX

25°C 5.3

V

I(PP)

= 1 V

0°C 5.9

RL = 10 kΩ,

p

()

70°C 4.3

SR

Slew rate at unity gain

C

L

=

20 pF

,

See

Figure

98

25°C 4.6

V/µs

See Figure 98

V

I(PP)

= 5.5 V

0°C 5.1

()

70°C 3.8

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 99

S

,

25°C

25

n

V/√H

z

25°C 200

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

0°C 220

kHz

R

L

= 10 kΩ,

See Figure 98

70°C 140
25°C 2.2

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

0°C

2.5

MHz

See Figure 100

70°C 1.8
25°C 49°

φ

m

Phase margin

f

=

B

1

,

=

p

V

I

=

10 mV

,

0°C 50°

C

L

= 20 F,

See Figure 100

70°C 46°

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

10

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

HIGH-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 5 V

PARAMETER TEST CONDITIONS T

A

TLC271I, TLC271AI,

TLC271BI

UNIT

A

MIN TYP MAX

25°C 3.6

V

I(PP)

= 1 V

–40°C 4.5

RL = 10 kΩ,

p

()

85°C 2.8

SR

Slew rate at unity gain

C

L

= 20 pF,

See Fi

g

ure 98

25°C 2.9

V/µs

See Figure 98

V

I(PP)

= 2.5 V

–40°C 3.5

()

85°C 2.3

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 99

S

,

25°C

25

n

V/√H

z

25°C 320

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

–40°C 380

kHz

R

L

= 10 kΩ,

See Figure 98

85°C 250
25°C 1.7

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–40°C

2.6

MHz

See Figure 100

85°C 1.2
25°C 46°

φ

m

Phase margin

V

I

= 10 mV,

p

f

=

B

1

,

–40°C 49°

C

L

= 20 F,

See Figure 100

85°C 43°

operating characteristics at specified free-air temperature, VDD = 10 V

PARAMETER TEST CONDITIONS T

A

TLC271I, TLC271AI,

TLC271BI

UNIT

A

MIN TYP MAX

25°C 5.3

V

I(PP)

= 1 V

–40°C 6.8

RL = 10 kΩ,

p

()

85°C 4

SR

Slew rate at unity gain

C

L

= 20 pF,

See Fi

g

ure 98

25°C 4.6

V/µs

See Figure 98

V

I(PP)

= 5.5 V

–40°C 5.8

()

85°C 3.5

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 99

S

,

25°C

25

n

V/√H

z

25°C 200

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

–40°C 260

kHz

R

L

= 10 kΩ,

See Figure 98

85°C 130
25°C 2.2

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–40°C

3.1

MHz

See Figure 100

85°C 1.7
25°C 49°

φ

m

Phase margin

V

I

= 10 mV,

=

p

f= B

1

,

–40°C 52°

C

L

= 20 F,

See Figure 100

85°C 46°

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

11

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

HIGH-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 5 V

TLC271M

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 3.6

V

I(PP)

= 1 V

–55°C 4.7

RL = 10 kΩ,

p

()

125°C 2.3

SR

Slew rate at unity gain

C

L

=

20 pF

,

See

Figure

98

25°C 2.9

V/µs

See Figure 98

V

I(PP)

= 2.5 V

–55°C 3.7

()

125°C 2

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 99

S

,

25°C

25

n

V/√H

z

25°C 320

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

–55°C 400

kHz

R

L

= 10 kΩ,

See Figure 98

125°C 230

25°C 1.7

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–55°C

2.9

MHz

See Figure 100

125°C 1.1

25°C 46°

φ

m

Phase margin

V

I

= 10 mV,

=

p

f

=

B

1

,

–55°C 49°

C

L

= 20 F,

See Figure 100

125°C 41°

operating characteristics at specified free-air temperature, VDD = 10 V

TLC271M

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 5.3

V

I(PP)

= 1 V

–55°C 7.1

RL = 10 kΩ,

p

()

125°C 3.1

SR

Slew rate at unity gain

C

L

= 20 pF,

See

Figure

98

25°C 4.6

V/µs

See Figure 98

V

I(PP)

= 5.5 V

–55°C 6.1

()

125°C 2.7

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 99

S

,

25°C

25

n

V/√H

z

25°C 200

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

–55°C 280

kHz

R

L

= 10 kΩ,

See Figure 98

125°C 110

25°C 2.2

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–55°C

3.4

MHz

See Figure 100

125°C 1.6

25°C 49°

φ

m

Phase margin

f

=

B

1

,

=

p

V

I

=

10 mV

,

–55°C 52°

C

L

= 20 F,

See Figure 100

125°C 44°

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

12

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Table of Graphs

FIGURE

V

IO

Input offset voltage Distribution 2, 3

α

VIO

T emperature coef ficient Distribution 4, 5

vs High-level output current 6, 7

V

OH

High-level output voltage

vs High level out ut current

vs Supply voltage

6, 7

8

OH

gg

yg

vs Free-air temperature 9

-

p

p

vs Common mode in ut voltage

vs Differential input voltage

10, 11

12

VOLLow-level output voltage

g

vs Free-air temperature 13
vs Low-level output current 14, 15

vs Supply voltage 16

A

VD

Large-signal differential voltage amplification

vs Su ly voltage

vs Free-air temperature

16

17

VD

gg g

vs Frequency 28, 29

I

IB

Input bias current vs Free-air temperature 18

I

IO

Input offset current vs Free-air temperature 18

V

IC

Common-mode input voltage vs Supply voltage 19

pp

vs Supply voltage 20

IDDSupply current

yg

vs Free-air temperature 21
vs Supply voltage 22

SR

Slew rate

yg

vs Free-air temperature 23

Bias-select current vs Supply voltage 24

V

O(PP)

Maximum peak-to-peak output voltage vs Frequency 25

vs Free-air temperature 26

B1Unity-gain bandwidth

vs Supply voltage 27

A

VD

Large-signal differential voltage amplification vs Frequency 28, 29

vs Supply voltage 30

φ

m

Phase margin

vs Su ly voltage

vs Free-air temperature

30

31

φ

m

g

vs Capacitive load 32

V

n

Equivalent input noise voltage vs Frequency 33
Phase shift vs Frequency 28, 29

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

13

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

†

Figure 2

– 5

0

Percentage of Units – %

VIO – Input Offset Voltage – mV

5

60

– 4– 3– 2– 1 0 1 2 3 4

10

20

30

40

50

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

TA = 25°C
P Package

753 Amplifiers Tested From 6 Wafer Lots
VDD = 5 V

Figure 3

50

40

30

20

10

43210– 1– 2– 3– 4

60

5

Percentage of Units – %

0

– 5

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

VIO – Input Offset Voltage – mV

P Package

TA = 25°C

VDD = 10 V

753 Amplifiers Tested From 6 Wafer Lots

Figure 4

50

40

30

20

10

86420– 2– 4– 6– 8

60

10

α

VIO

– Temperature Coefficient – µV/°C

Percentage of Units – %

0

– 10

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

P Package

TA = 25°C to 125°C

VDD = 5 V

324 Amplifiers Tested From 8 Wafer Lots

Outliers:
(1) 20.5 µV/°C

Figure 5

– 10

0

Percentage of Units – %

10

60

– 8 – 6 – 4 – 2 0 2 4 6 8

10

20

30

40

50

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

TA = 25°C to 125°C

Outliers:

P Package

(1) 21.2 µV/°C

324 Amplifiers Tested From 8 Wafer lots
VDD = 10 V

α

VIO

– Temperature Coefficient – µV/°C

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

14

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

†

Figure 6

0

0

VOH – High-Level Output Voltage – V

IOH – High-Level Output Current – mA

– 10

5

– 2 – 4 – 6 – 8

1

2

3

4

TA = 25°C

VID = 100 mV

VDD = 5 V

VDD = 4 V

VDD = 3 V

HIGH-LEVEL OUTPUT VOLTAGE

vs

HIGH-LEVEL OUTPUT CURRENT

V

OH

Figure 7

0

0

IOH – High-Level Output Current – mA

– 40

16

– 10 – 20 – 30

2

4

6

8

10

12

14

VDD = 16 V

VDD = 10 V

VID = 100 mV
TA = 25°C

HIGH-LEVEL OUTPUT VOLTAGE

vs

HIGH-LEVEL OUTPUT CURRENT

VOH – High-Level Output Voltage – V

V

OH

– 5 – 15 – 25 – 35

Figure 8

0

VDD – Supply Voltage – V

162 4 6 8 10 12 14

14

12

10

8

6

4

2

16

0

VID = 100 mV
RL = 10 kΩ
TA = 25°C

HIGH-LEVEL OUTPUT VOLTAGE

vs

SUPPLY VOLTAGE

VOH – High-Level Output Voltage – V

V

OH

Figure 9

– 1.7

– 1.8

– 1.9

– 2

– 2.1

– 2.2

– 2.3

1007550200– 25– 50

VDD – 1.6

125

TA – Free-Air Temperature – °C

– 2.4

– 75

IOH = –5 mA
VID = 100 mA

VDD = 5 V

VDD = 10 V

HIGH-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

VOH – High-Level Output Voltage – V

V

OH

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

15

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

†

Figure 10

0

300

VOL – Low-Level Output V oltage – mV

VIC – Common-Mode Input Voltage – V

4

700

1 2 3

400

500

600

TA = 25°C

IOL = 5 mA

VDD = 5 V

VID = –1 V

LOW-LEVEL OUTPUT VOLTAGE

vs

COMMON-MODE INPUT VOLTAGE

650

550

450

350

V

OL

VID = –100 mV

Figure 11

250

0

VIC – Common-Mode Input Voltage – V

300

350

400

450

500

246810

VDD = 10 V
IOL = 5 mA
TA = 25°C

VID = –1 V
VID = –2.5 V

VID = –100 mV

LOW-LEVEL OUTPUT VOLTAGE

vs

COMMON-MODE INPUT VOLTAGE

13579

VOL – Low-Level Output V oltage – mV

V

OL

Figure 12

0

VID – Differential Input Voltage – V

– 10– 2 – 4 – 6 – 8

800

700

600

500

400

300

200

100

0

IOL = 5 mA
VIC = VID/2
TA = 25°C

VDD = 10 V

LOW-LEVEL OUTPUT VOLTAGE

vs

DIFFERENTIAL INPUT VOLTAGE

VOL – Low-Level Output V oltage – mV

V

OL

– 1– 3– 5– 7– 9

ÎÎÎÎ

VDD = 5 V

Figure 13

– 75

0

TA – Free-Air Temperature – °C

125

900

– 50 – 25 0 25 50 75 100

100

200

300

400

500

600

700

800

VIC = 0.5 V

VID = –1 V

IOL = 5 mA

LOW-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

VOL – Low-Level Output V oltage – mV

V

OL

VDD = 10 V

VDD = 5 V

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

16

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

†

Figure 14

LOW-LEVEL OUTPUT VOLTAGE

vs

LOW-LEVEL OUTPUT CURRENT

0

IOL – Low-Level Output Current – mA

1

8

0

1 2 345 6 7

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VID = –1 V
VIC = 0.5 V
TA = 25°C

VDD = 5 V

VOL – Low-Level Output V oltage – mV

V

OL

VDD = 3 V

VDD = 4 V

Figure 15

0

IOL – Low-Level Output Current – mA

3

30

0

5 10 15 20 25

0.5

1

1.5

2

2.5

TA = 25°C

VIC = 0.5 V

VID = –1 V

VDD = 10 V

VDD = 16 V

LOW-LEVEL OUTPUT VOLTAGE

vs

LOW-LEVEL OUTPUT CURRENT

VOL – Low-Level Output V oltage – mV

V

OL

Figure 16

0

60

16

0

246 8 10 12 14

10

20

30

40

50

VDD – Supply Voltage – V

85°C

125°C

TA = – 55°C

RL = 10 kΩ

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

SUPPLY VOLTAGE

0°C

25°C

AVD – Large-Signal Differential

A

VD

Voltage Amplification – V/mV

Figure 17

– 75

TA – Free-Air Temperature – °C

50

125

0

– 50 – 25 0 25 50 75 100

5

10

15

20

25

30

35

40

45

VDD = 5 V

VDD = 10 V

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

FREE-AIR TEMPERATURE

AVD – Large-Signal Differential

A

VD

Voltage Amplification – V/mV

RL = 10 kΩ

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

17

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

†

Figure 18

0.1
125

10000

45 65 85 105

1

10

100

1000

25

TA – Free-Air Temperature – °C

INPUT BIAS CURRENT AND INPUT OFFSET

CURRENT

vs

FREE-AIR TEMPERATURE

VDD = 10 V
VIC = 5 V
See Note A

I

IB

I

IO

IIB and IIO – Input Bias and

IB

I

I

IO

Input Offset Currents – nA

NOTE A: The typical values of input bias current and input offset

current below 5 pA were determined mathematically.

Figure 19

0

VDD – Supply Voltage – V

16

16

0

246 8 10 12 14

2

4

6

8

10

12

14

TA = 25°C

COMMON-MODE INPUT VOLTAGE

(POSITIVE LIMIT)

vs

SUPPLY VOLTAGE

– Common-Mode Input Voltage – V
V

IC

Figure 20

0

IDD – Supply Current – mA

VDD – Supply Voltage – V

2.5

16

0

2 4 6 8 10 12 14

0.5

1

1.5

2

TA =–55°C

25°C

70°C

125°C

SUPPLY CURRENT

vs

SUPPLY VOLTAGE

DD

I

0°C

VO = VDD/2
No Load

Figure 21

– 75

TA – Free-Air Temperature – °C

2

125

0

0.5

1

1.5

– 50 – 25 0 25 50 75 100

VDD = 10 V

VDD = 5 V

SUPPLY CURRENT

vs

FREE-AIR TEMPERATURE

IDD – Supply Current – mA

DD

I

VO = VDD/2
No Load

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

18

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

†

Figure 22

TA = 25°C
See Figure 98

AV = 1
V

I(PP)

= 1 V
RL = 10 kΩ
CL = 20 pF

8

7

6

5

4

3

2

1

1412108642

0

16

VDD – Supply Voltage – V

SR – Slew Rate – V/ us

0

SLEW RATE

vs

SUPPLY VOLTAGE

sµ

Figure 23

VDD = 10 V

V

I(PP)

= 1 V

VDD = 5 V

RL = 10 kΩ

AV = 1

See Figure 99

CL = 20 pF

–75

0

1

2

3

4

5

6

7

8

1007550250–25–50 125

TA – Free-Air Temperature – °C

SLEW RATE

vs

FREE-AIR TEMPERATURE

SR – Slew Rate – V/ us

sµ

VDD = 10 V
V

I(PP)

= 5.5 V

V

I(PP)

= 1 V

VDD = 5 V
V

I(PP)

= 2.5 V

Figure 24

V

I(SEL)

= 0

TA = 25°C

– 2.4

– 1.8

– 1.2

– 0.6

1412108642

0

16

– 3

VDD – Supply Voltage – V

0

BIAS-SELECT CURRENT

vs

SUPPLY VOLTAGE

– 2.7

– 2.1

– 1.5

– 0.9

– 0.3

Bias-Select Current – ua

Aµ

Figure 25

VDD = 5 V

1000100

9

8

7

6

5

4

3

2

1

0

10000

10

f – Frequency – kHz

10

MAXIMUM PEAK-TO-PEAK OUTPUT

VOLTAGE

vs

FREQUENCY

TA = 125°C
TA = 25°C
TA = 55°C

VDD = 10 V

RL = 10 kΩ
See Figure 98

– Maximum Peak-to-Peak Output Voltage – V

V

O(PP)

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

19

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

†

Figure 26

See Figure 100

CL = 20 pF

VI = 10 mV

VDD = 5 V

2.5

2

1.5

1007550250– 25– 50

1

125

3

TA – Free-Air Temperature – °C

B1 – Unity-Gain Bandwidth – MHz

– 75

UNITY-GAIN BANDWIDTH

vs

FREE-AIR TEMPERATURE

B

1

Figure 27

VI = 10 mV
CL = 20 pF
TA = 25°C
See Figure 100

2

1.5

1412108642

1

16

2.5

VDD – Supply Voltage – V

0

UNITY-GAIN BANDWIDTH

vs

SUPPLY VOLTAGE

B1 – Unity-Gain Bandwidth – MHz

B

1

Phase Shift

A

VD

VDD = 5 V
RL = 10 kΩ
TA = 25°C

Phase Shift

10

6

10

5

10

4

10

3

10

2

10

1

1

1 M100 k10 k1 k100

0.1
10 M

f – Frequency – Hz

10

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

10

7

150°

120°

90°

60°

30°

0°

180°

AVD – Large-Signal Differential

A

VD

Voltage Amplification

Figure 28

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

20

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

†

Phase Shift

A

VD

TA = 25°C

RL = 10 kΩ

VDD = 10 V

Phase Shift

150°

120°

90°

60°

30°

0°

180°

10

6

10

5

10

4

10

3

10

2

10

1

1

1 M100 k10 k1 k100

0.1
10 M

f – Frequency – Hz

10

LARGE-SCALE DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

10

7

AVD – Large-Signal Differential

A

VD

Voltage Amplification

Figure 29

Figure 30

0

m – Phase Margin

VDD – Supply Voltage – V

53°

16

2 4 6 8 10 12 14

47°

49°

51°

CL = 20 pF
TA = 25°C

VI = 10 mV

See Figure 100

PHASE MARGIN

vs

SUPPLY VOLTAGE

46°

45°

48°

50°

52°

m

φ

Figure 31

– 75

50°

125

40°

– 50 – 25 0 25 50 75 100

42°

44°

46°

48°

VDD = 5 V

CL = 20 pF

VI = 10 mV

See Figure 100

TA – Free-Air Temperature – °C

PHASE MARGIN

vs

FREE-AIR TEMPERATURE

m – Phase Margin

m

φ

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

21

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

†

Figure 32

0

CL – Capacitive Load – pF

50°

100

25°

20 40 60 80

30°

35°

40°

45°

See Figure 100

VI = 10 mV
TA = 25°C

VDD = 5 mV

PHASE MARGIN

vs

CAPACITIVE LOAD

m – Phase Margin

m

φ

Figure 33

VN – Equivalent Input Noise Voltage – nV/Hz

1

f – Frequency – Hz

400

1000

0

100

200

300

10 100

EQUIVALENT NOISE VOLTAGE

vs

FREQUENCY

V

n

nV/ Hz

350

250

150

50

VDD = 5 V

TA = 25°C

RS = 20 Ω

See Figure 99

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

22

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MEDIUM-BIAS MODE

electrical characteristics at specified free-air temperature (unless otherwise noted)

TLC271C, TLC271AC, TLC271BC

PARAMETER TEST CONDITIONS

T

A

†

VDD = 5 V VDD = 10 V

UNIT

A

MIN TYP MAX MIN TYP MAX

25°C 1.1 10 1.1 10

TLC271C

Full range 12 12

p

V

O

= 1.4 V,

V

= 0

25°C 0.9 5 0.9 5

VIOInput offset voltage

TLC271AC

IC

RS = 50 Ω,

Full range 6.5 6.5

mV

RI = 100 kΩ

25°C 0.25 2 0.26 2

TLC271BC

Full range 3 3

α

VIO

Average temperature coefficient
of input offset voltage

25°C to

70°C

1.7 2.1 µV/°C

p

V

= V

/2,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

ODD

,

VIC = VDD/2

70°C 7 300 7 300

pA

p

V

= V

/2,

25°C 0.6 0.7

p

IIBInput bias current (see Note 4)

ODD

,

VIC = VDD/2

70°C 40 600 50 600

pA

Common-mode input

25°C

–0.2

to

4

–0.3

to

4.2

–0.2

to

9

–0.3

to

9.2

V

V

ICR

voltage range (see Note 5)

Full range

–0.2

to

3.5

–0.2

to

8.5

V

25°C 3.2 3.9 8 8.7

V

OH

High-level output voltage

VID = 100 mV ,

0°C 3 3.9 7.8 8.7

V

R

L

=

100 kΩ

70°C 3 4 7.8 8.7
25°C 0 50 0 50

V

OL

Low-level output voltage

VID = –100 mV ,

0°C 0 50 0 50

mV

I

OL

=

0

70°C 0 50 0 50
25°C 25 170 25 275

A

VD

Large-signal differential

p

RL = 100 kΩ,

0°C 15 200 15 320

V/mV

voltage am lification

See Note 6

70°C 15 140 15 230
25°C 65 91 65 94

CMRR Common-mode rejection ratio VIC = V

ICR

min

0°C 60 91 60 94

dB
70°C 60 92 60 94
25°C 70 93 70 93

k

SVR

Supply-voltage rejection ratio

VDD = 5 V to 10 V

0°C 60 92 60 92

dB

(∆VDD/∆VIO)

V

O

= 1.4

V

70°C 60 94 60 94

I

I(SEL)

Input current (BIAS SELECT) V

I(SEL)

= VDD/2 25°C –130 –160 nA

V

= V

/2

,

25°C 105 280 143 300

I

DD

Supply current

V

O

VDD/2,

VIC = VDD/2,

0°C 125 320 173 400

µA

No load

70°C 85 220 110 280

†

Full range is 0°C to 70°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

23

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MEDIUM-BIAS MODE

electrical characteristics at specified free-air temperature (unless otherwise noted)

TLC271I, TLC271AI, TLC271BI

PARAMETER

TEST

T

A

†

VDD = 5 V VDD = 10 V

UNIT

CONDITIONS

A

MIN TYP MAX MIN TYP MAX

25°C 1.1 10 1.1 10

TLC271I

Full range 13 13

p

V

O

= 1.4 V,

V

= 0 V,

25°C 0.9 5 0.9 5

VIOInput offset voltage

TLC271AI

IC

,

RS = 50 Ω,

Full range 7 7

mV

RL = 100 kΩ

25°C 0.25 2 0.26 2

TLC271BI

Full range 3.5 3.5

α

VIO

Average temperature coefficient
of input offset voltage

25°C to

85°C

1.7 2.1 µV/°C

p

V

= V

/2,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

ODD

,

VIC = VDD/2

85°C 24 1000 26 1000

pA

p

V

= V

/2,

25°C 0.6 0.7

p

IIBInput bias current (see Note 4)

ODD

,

VIC = VDD/2

85°C 200 2000 220 2000

pA

Common-mode input

25°C

–0.2

to

4

–0.3

to

4.2

–0.2

to

9

–0.3

to

9.2

V

V

ICR

voltage range (see Note 5)

Full range

–0.2

to

3.5

–0.2

to

8.5

V

25°C 3.2 3.9 8 8.7

V

OH

High-level output voltage

VID = 100 mV ,

–40°C 3 3.9 7.8 8.7

V

R

L

=

100 kΩ

85°C 3 4 7.8 8.7
25°C 0 50 0 50

V

OL

Low-level output voltage

VID = –100 mV ,

–40°C 0 50 0 50

mV

I

OL

=

0

85°C 0 50 0 50
25°C 25 170 25 275

A

VD

Large-signal differential

p

RL = 100 kΩ,

–40°C 15 270 15 390

V/mV

voltage am lification

See Note 6

85°C 15 130 15 220
25°C 65 91 65 94

CMRR Common-mode rejection ratio VIC = V

ICR

min

–40°C 60 90 60 93

dB
85°C 60 90 60 94
25°C 70 93 70 93

k

SVR

Supply-voltage rejection ratio

VDD = 5 V to 10 V

–40°C 60 91 60 91

dB

(∆VDD/∆VIO)

V

O

= 1.4

V

85°C 60 94 60 94

I

I(SEL)

Input current (BIAS SELECT) V

I(SEL)

= VDD/2 25°C –130 –160 nA

V

= V

/2

,

25°C 105 280 143 300

I

DD

Supply current

V

O

VDD/2,

VIC = VDD/2,

–40°C 158 400 225 450

µA

No load

85°C 80 200 103 260

†

Full range is –40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

24

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MEDIUM-BIAS MODE

electrical characteristics at specified free-air temperature (unless otherwise noted)

TLC271M

PARAMETER

TEST

T

A

†

VDD = 5 V VDD = 10 V

UNIT

CONDITIONS

A

MIN TYP MAX MIN TYP MAX

p

VO = 1.4 V,
VIC = 0 V,

25°C 1.1 10 1.1 10 mV

VIOInput offset voltage

RS = 50 Ω,
RL = 100 kΩ

Full range 12 12

α

VIO

Average temperature coefficient
of input offset voltage

25°C to

125°C

1.7 2.1 µV/°C

p

V

= V

/2,

25°C 0.1 0.1 pA

IIOInput offset current (see Note 4)

ODD

,

VIC = VDD/2

125°C 1.4 15 1.8 15 nA

p

V

= V

/2,

25°C 0.6 0.7 pA

IIBInput bias current (see Note 4)

ODD

,

VIC = VDD/2

125°C 9 35 10 35 nA

Common-mode input

25°C

0

to

4

–0.3

to

4.2

0

to

9

–0.3

to

9.2

V

V

ICR

voltage range (see Note 5)

Full range

0

to

3.5

0

to

8.5

V

25°C 3.2 3.9 8 8.7

V

OH

High-level output voltage

VID = 100 mV ,

–55°C 3 3.9 7.8 8.6

V

R

L

=

100 kΩ

125°C 3 4 7.8 8.6

25°C 0 50 0 50

V

OL

Low-level output voltage

VID = –100 mV ,

–55°C 0 50 0 50

mV

I

OL

=

0

125°C 0 50 0 50

25°C 25 170 25 275

A

VD

Large-signal differential

p

RL = 10 kΩ

–55°C 15 290 15 420

V/mV

voltage am lification

See Note 6

125°C 15 120 15 190

25°C 65 91 65 94

CMRR Common-mode rejection ratio VIC = V

ICR

min

–55°C 60 89 60 93

dB

125°C 60 91 60 93

25°C 70 93 70 93

k

SVR

Supply-voltage rejection ratio

VDD = 5 V to 10 V

–55°C 60 91 60 91

dB

(∆VDD/∆VIO)

V

O

= 1.4

V

125°C 60 94 60 94

I

I(SEL)

Input current (BIAS SELECT) V

I(SEL)

= VDD/2 25°C –130 –160 nA

V

= V

/2

,

25°C 105 280 143 300

I

DD

Supply current

V

O

VDD/2,

VIC = VDD/2,

–55°C 170 440 245 500

µA

No load

125°C 70 180 90 240

†

Full range is –55°C to 125°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

25

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MEDIUM-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 5 V

PARAMETER TEST CONDITIONS T

A

TLC271C, TLC271AC,

TLC271BC

UNIT

A

MIN TYP MAX

25°C 0.43

V

I(PP)

= 1 V

0°C 0.46

RL = 100 kΩ,

p

()

70°C 0.36

SR

Slew rate at unity gain

C

L

= 20 pF,

See Fi

g

ure 98

25°C 0.40

V/µs

See Figure 98

V

I(PP)

= 2.5 V

0°C 0.43

()

70°C 0.34

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 32

nV/√Hz

25°C 55

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

0°C 60

kHz

R

L

=

100 kΩ

,

See Figure 98

70°C 50
25°C 525

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

0°C

600

kHz

See Figure 100

70°C 400
25°C 40°

φ

m

Phase margin

V

I

= 10 mV,

p

f

=

B

1

,

0°C 41°

C

L

= 20 F,

See Figure 100

70°C 39°

operating characteristics at specified free-air temperature, VDD = 10 V

PARAMETER TEST CONDITIONS T

A

TLC271C, TLC271AC,

TLC271BC

UNIT

A

MIN TYP MAX

25°C 0.62

V

I(PP)

= 1 V

0°C 0.67

RL = 100 kΩ,

p

()

70°C 0.51

SR

Slew rate at unity gain

C

L

= 20 pF,

See Fi

g

ure 98

25°C 0.56

V/µs

See Figure 98

V

I(PP)

= 5.5 V

0°C 0.61

()

70°C 0.46

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 32

nV/√Hz

25°C 35

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

0°C 40

kHz

R

L

=

100 kΩ

,

See Figure 98

70°C 30
25°C 635

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

0°C

710

kHz

See Figure 100

70°C 510
25°C 43°

φ

m

Phase margin

V

I

=

10 mV

,

p

f

=

B

1

,

0°C 44°

C

L

= 20 F,

See Figure 100

70°C 42°

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

26

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MEDIUM-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 5 V

PARAMETER TEST CONDITIONS T

A

TLC271I, TLC271AI,

TLC271BI

UNIT

A

MIN TYP MAX

25°C 0.43

V

I(PP)

= 1 V

–40°C 0.51

RL = 100 kΩ,

p

()

85°C 0.35

SR

Slew rate at unity gain

C

L

= 20 pF,

See Fi

g

ure 98

25°C 0.40

V/µs

See Figure 98

V

I(PP)

= 2.5 V

–40°C 0.48

()

85°C 0.32

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 32

nV/√Hz

25°C 55

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

–40°C 75

kHz

R

L

=

100 kΩ

,

See Figure 98

85°C 45
25°C 525

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–40°C

770

MHz

See Figure 100

85°C 370
25°C 40°

φ

m

Phase margin

V

I

= 10 mV,

p

f

=

B

1

,

–40°C 43°

C

L

= 20 F,

See Figure 100

85°C 38°

operating characteristics at specified free-air temperature, VDD = 10 V

PARAMETER TEST CONDITIONS T

A

TLC271I, TLC271AI,

TLC271BI

UNIT

A

MIN TYP MAX

25°C 0.62

V

I(PP)

= 1 V

–40°C 0.77

RL = 100 kΩ,

p

()

85°C 0.47

SR

Slew rate at unity gain

C

L

= 20 pF,

See Fi

g

ure 98

25°C 0.56

V/µs

See Figure 98

V

I(PP)

= 5.5 V

–40°C 0.70

()

85°C 0.44

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 32

nV/√Hz

25°C 35

B

OM

Maximum output-swing bandwidth

VO = VOH,3

CL = 20 pF,

–40°C 45

kHz

R

L

=

100 kΩ

,

See Figure 98

85°C 25
25°C 635

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–40°C

880

kHz

See Figure 100

85°C 480
25°C 43°

φ

m

Phase margin

V

I

=

10 mV

,

p

f

=

B

1

,

–40°C 46°

C

L

= 20 F,

See Figure 100

85°C 41°

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

27

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MEDIUM-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 5 V

TLC271M

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 0.43

V

I(PP)

= 1 V

–55°C 0.54

RL = 100 kΩ,

p

()

125°C 0.29

SR

Slew rate at unity gain

C

L

=

20 pF

,

See Fi

g

ure 98

25°C 0.40

V/µs

See Figure 98

V

I(PP)

= 2.5 V

–55°C 0.50

()

125°C 0.28

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 32

nV/√Hz

25°C 55

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

–55°C 80

kHz

R

L

=

100 kΩ

,

See Figure 98

125°C 40

25°C 525

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–55°C

850

kHz

See Figure 100

125°C 330

25°C 40°

φ

m

Phase margin

V

I

= 10 mV,

p

f

=

B

1

,

–55°C 43°

C

L

= 20 F,

See Figure 100

125°C 36°

operating characteristics at specified free-air temperature, VDD = 10 V

TLC271M

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 0.62

V

I(PP)

= 1 V

–55°C 0.81

RL = 100 kΩ,

p

()

125°C 0.38

SR

Slew rate at unity gain

C

L

=

20 pF

,

See Fi

g

ure 98

25°C 0.56

V/µs

See Figure 98

V

I(PP)

= 5.5 V

–55°C 0.73

()

125°C 0.35

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 32

nV/√Hz

25°C 35

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

–55°C 50

kHz

R

L

=

100 kΩ

,

See Figure 98

125°C 20

25°C 635

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–55°C

960

kHz

See Figure 100

125°C 440

25°C 43°

φ

m

Phase margin

V

I

= 10 mV,

p

f

=

B

1

,

–55°C 47°

C

L

= 20 F,

See Figure 100

125°C 39°

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

28

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

Table of Graphs

FIGURE

V

IO

Input offset voltage Distribution 34, 35

α

VIO

T emperature coef ficient Distribution 36, 37

vs High-level output current 38, 39

V

OH

High-level output voltage

vs High level out ut current

vs Supply voltage

38, 39

40

OH

gg

yg

vs Free-air temperature 41

-

p

p

vs Common mode in ut voltage

vs Differential input voltage

42, 43

44

VOLLow-level output voltage

g

vs Free-air temperature 45
vs Low-level output current 46, 47

vs Supply voltage 48

A

VD

Large-signal differential voltage amplification

vs Su ly voltage

vs Free-air temperature

48

49

VD

gg g

vs Frequency 60, 61

I

IB

Input bias current vs Free-air temperature 50

I

IO

Input offset current vs Free-air temperature 50

V

I

Maximum Input voltage vs Supply voltage 51

pp

vs Supply voltage 52

IDDSupply current

yg

vs Free-air temperature 53
vs Supply voltage 54

SR

Slew rate

yg

vs Free-air temperature 55

Bias-select current vs Supply voltage 56

V

O(PP)

Maximum peak-to-peak output voltage vs Frequency 57

vs Free-air temperature 58

B1Unity-gain bandwidth

vs Supply voltage 59
vs Supply voltage 62

φ

m

Phase margin

vs Su ly voltage

vs Free-air temperature

62

63

φ

m

g

vs Capacitive load 64

V

n

Equivalent input noise voltage vs Frequency 65
Phase shift vs Frequency 60, 61

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

29

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

†

Figure 34

–5

0

Percentage of Units – %

VIO – Input Offset Voltage – mV

5–4 –3 –2 –1 0 1 2 3 4

10

20

30

40

50

60

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

VDD = 5 V
TA = 25°C
N Package

612 Amplifiers Tested From 6 Wafer Lots

Figure 35

60

50

40

30

20

10

43210–1–2–3–4 5

VIO – Input Offset Voltage – mV

Percentage of Units – %

0

–5

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

612 Amplifiers Tested From 6 Wafer Lots
VDD = 5 V
TA = 25°C
N Package

Figure 36

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

60

50

40

30

20

10

0

– 10 – 8 10

α

VIO

– Temperature Coefficient – µV/°C

Percentage of Units – %

– 6 – 4 – 2 0 2 4 6 8

224 Amplifiers Tested From 6 Water Lots
VDD = 5 V
TA = 25°C to 125°C
P Package
Outliers:
(1) 33.0 µV/°C

Figure 37

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

20

60

50

40

30

10

0
– 10 – 8 – 6 – 4 – 2 0 2 4 6 8 10

α

VIO

– Temperature Coefficient – µV/°C

Percentage of Units – %

224 Amplifiers Tested From 6 Water Lots
VDD = 10 V
TA = 25°C to 125°C
P Package
Outliers:
(1) 34.6 µV/°C

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

30

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

†

Figure 38

0

0

VOH – High-Level Output Voltage – V

IOH – High-Level Output Current – mA

– 10

5

– 2 – 4 – 6 – 8

1

2

3

4

TA = 25°C

VID = 100 mV

VDD = 5 V

VDD = 4 V

VDD = 3 V

HIGH-LEVEL OUTPUT VOLTAGE

vs

HIGH-LEVEL OUTPUT CURRENT

V

OH

Figure 39

0

0

IOH – High-Level Output Current – mA

– 40

16

– 10 – 20 – 30

2

4

6

8

10

12

14

VDD = 16 V

VDD = 10 V

VID = 100 mV
TA = 25°C

HIGH-LEVEL OUTPUT VOLTAGE

vs

HIGH-LEVEL OUTPUT CURRENT

– 35– 25– 15– 5

VOH – High-Level Output Voltage – V

V

OH

Figure 40

0

VDD – Supply Voltage – V

162 4 6 8 10 12 14

14

12

10

8

6

4

2

16

0

VID = 100 mV
RL = 10 kΩ

TA = 25°C

HIGH-LEVEL OUTPUT VOLTAGE

vs

SUPPLY VOLTAGE

VOH – High-Level Output Voltage – V

V

OH

Figure 41

– 1.7

– 1.8

– 1.9

– 2

– 2.1

– 2.2

– 2.3

1007550200– 25– 50

VDD – 1.6

125

TA – Free-Air Temperature – °C

– 2.4

– 75

IOH = –5 mA
VID = 100 mA

VDD = 5 V

VDD = 10 V

HIGH-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

VOH – High-Level Output Voltage – V

V

OH

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

31

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

†

Figure 42

0

300

VIC – Common-Mode Input Voltage – V

4

700

1 2 3

400

500

600

TA = 25°C

IOL = 5 mA

VDD = 5 V

LOW-LEVEL OUTPUT VOLTAGE

vs

COMMON-MODE INPUT VOLTAGE

650

550

450

350

VOL – Low-Level Output V oltage – mV

V

OL

VID = –1 V

VID = –100 mV

Figure 43

250

0

VIC – Common-Mode Input Voltage – V

300

350

400

450

500

246810

VDD = 10 V
IOL= 5 mA
TA = 25°C

VID = –1 V
VID = –2.5 V

VID = –100 mV

LOW-LEVEL OUTPUT VOLTAGE

vs

COMMON-MODE INPUT VOLTAGE

VOL – Low-Level Output V oltage – mV

V

OL

97531

Figure 44

0

VID – Differential Input Voltage – V

– 10– 2 – 4 – 6 – 8

800

700

600

500

400

300

200

100

0

VDD = 5 V

VDD = 10 V

LOW-LEVEL OUTPUT VOLTAGE

vs

DIFFERENTIAL INPUT VOLTAGE

VOL – Low-Level Output V oltage – mV

V

OL

– 1 – 3 – 5 – 7 – 9

IOL = 5 mA
VIC = |VID/2|
TA = 25°C

Figure 45

– 75

0

TA – Free-Air Temperature – °C

125

900

– 50 – 25 0 25 50 75 100

100

200

300

400

500

600

700

800

VIC = 0.5 V

VID = –1 V

IOL = 5 mA

VDD = 5 V

VDD = 10 V

LOW-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

VOL – Low-Level Output V oltage – mV

V

OL

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

32

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

†

Figure 46

0

IOL – Low-Level Output Current – mA

1

8

0

1 2 3 4 5 6 7

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VID = –1 V
VIC = 0.5 V
TA = 25°C

VDD = 3 V

VDD = 4 V

VDD = 5 V

LOW-LEVEL OUTPUT VOLTAGE

vs

LOW-LEVEL OUTPUT CURRENT

VOL – Low-Level Output V oltage – V

V

OL

Figure 47

0

IOL – Low-Level Output Current – mA

3

30

0

51015 20 25

0.5

1

1.5

2

2.5

TA = 25°C

VIC = 0.5 V

VID = –1 V

LOW-LEVEL OUTPUT VOLTAGE

vs

LOW-LEVEL OUTPUT CURRENT

VOL – Low-Level Output V oltage – V

V

OL

VDD = 16 V

VDD = 10 V

Figure 48

0

VDD – Supply Voltage – V

500

16

0

2 4 6 8 10 12 14

50

100

150

200

250

300

350

400

450

TA = –55°C

–40°C

0°C
25°C

70°C

85°C

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

SUPPLY VOLTAGE

TA = 125°C

RL = 100 kΩ

AVD – Large-Signal Differential

A

VD

Voltage Amplification – V/mV

Figure 49

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

FREE-AIR TEMPERATURE

450

400

350

300

250

200

150

100

50

1007550250–25–50

0

125

500

TA – Free-Air Temperature – °C

–75

VDD = 5 V

VDD = 10 V

RL = 100 kΩ

AVD – Large-Signal Differential

A

VD

Voltage Amplification – V/mV

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

33

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

†

Figure 50

0.1
125

10000

45 65 85 105

1

10

100

1000

25

TA – Free-Air Temperature – °C

INPUT BIAS CURRENT AND INPUT OFFSET

CURRENT

vs

FREE-AIR TEMPERATURE

115957555

35

VDD = 10 V
VIC = 5 V
See Note A

I

IB

I

IO

IIB and IIO – Input Bias and

IB

I

I

IO

Input Offset Currents – pA

NOTE A: The typical values of input bias current and input offset

current below 5 pA were determined mathematically.

Figure 51

MAXIMUM INPUT VOLTAGE

vs

SUPPLY VOLTAGE

0

VDD – Supply Voltage – V

16

16

0

246 8 10 12 14

2

4

6

8

10

12

14

TA = 25°C

VI – Maximum Input Voltage – V

V

I

Figure 52

IDD – Supply Current – mA

VDD – Supply Voltage – V

VO = VDD/2
No Load

TA = –55°C

0°C

25°C

70°C

125°C

0

400

16

0

2 4 6 8 10 12 14

50

100

150

200

250

300

350

–40°C

SUPPLY CURRENT

vs

SUPPLY VOLTAGE

I

DD

Figure 53

–75

TA – Free-Air Temperature – °C

250

125

0

–50 –25 0 25 50 75 100

25

50

75

100

125

150

175

200

225

SUPPLY CURRENT

vs

FREE-AIR TEMPERATURE

IDD – Supply Current – mA

I

DD

No Load

VO = VDD/2

VDD = 10 V

VDD = 5 V

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

34

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

†

Figure 54

0

SR – Slew Rate – V/

VDD – Supply Voltage – V

0.9

16

0.3
2 4 6 8 10 12 14

0.4

0.5

0.6

0.7

0.8

SLEW RATE

vs

SUPPLY VOLTAGE

sµ

CL = 20 pF

RL = 100 kΩ

V

I(PP)

= 1 V

AV = 1

See Figure 99

TA = 25°C

Figure 55

–75

TA – Free-Air Temperature – °C

0.9

125

0.2
–50 –25 0 25 50 75 100

0.3

0.4

0.5

0.6

0.7

0.8

SLEW RATE

vs

FREE-AIR TEMPERATURE

ÁÁÁÁ

ÁÁÁÁ

RL = 10 kΩ

AV = 1

See Figure 99

CL = 20 pF

SR – Slew Rate – V/

sµ

V

I(PP)

= 5.5 V

VDD = 10 V

VDD = 10 V
V

I(PP)

= 1 V

VDD = 5 V
V

I(PP)

= 2.5 V

V

I(PP)

= 1 V

VDD = 5 V

Figure 56

0

Bias-Select Current – nA

VDD – Supply Voltage – V

–300

16

0

2 4 6 8 101214

–30

–60

–90

–120

–150

–180

–210

–240

–270

BIAS-SELECT CURRENT

vs

SUPPLY VOLTAGE

V

I(SEL

) = 1/2 V

DD

TA = 25°C

Figure 57

1

f – Frequency – kHz

10

1000

0

1

2

3

4

5

6

7

8

9

10 100

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE

vs

FREQUENCY

RL = 100 kΩ
See Figure 99

VDD = 10 V

VDD = 5 V

TA = –55°C

TA = 25°C

TA = 125°C

– Maximum Peak-to-Peak Output Voltage – V

V

O(PP)

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

35

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

†

Figure 58

800

700

600

500

400

1007550250–25–50

300

125

900

TA – Free-Air Temperature – °C

B1 – Unity-Gain Bandwidth – MHz

–75

UNITY-GAIN BANDWIDTH

vs

FREE-AIR TEMPERATURE

See Figure 101

CL = 20 pF

VI = 10 mV

VDD = 5 V

B

1

Figure 59

UNITY-GAIN BANDWIDTH

vs

SUPPLY VOLTAGE

750

700

650

600

550

500

450

1412108642

400

16

800

VDD – Supply Voltage – V

0

VI = 10 mV
CL = 20 pF
TA = 25°C
See Figure 101

B1 – Unity-Gain Bandwidth – MHz

B

1

Phase Shift

Phase Shift

180°

0°

30°

60°

90°

120°

150°

10

6

10

5

10

4

10

3

10

2

10

1

1

100 K101 k10010

0.1
1 M

f – Frequency – Hz

1

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

VDD = 5 V
RL = 100 kΩ
TA = 25°C

10

7

A

VD

AVD – Large-Signal Differential

A

VD

Voltage Amplification

Figure 60

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

36

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

†

1

f – Frequency – Hz

1 M

0.1
10 100 1 k 10 k 100 k

1

10

1

10

2

10

3

10

4

10

5

10

6

150°

120°

90°

60°

30°

0°

180°

Phase Shift

A

VD

Phase Shift

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

10

7

TA = 25°C

RL = 100 kΩ

VDD = 10 V

AVD – Large-Signal Differential

A

VD

Voltage Amplification

Figure 61

Figure 62

0

38°

m – Phase Margin

VDD – Supply Voltage – V

16

50°

2 4 6 8 10 12 14

40°

42°

44°

46°

48°

See Figure 100

TA = 25°C

CL = 20 pF

VI = 10 mV

PHASE MARGIN

vs

SUPPLY VOLTAGE

m

φ

Figure 63

–75

35°

TA – Free-Air Temperature – °C

125

45°

–50 –25 0 25 50 75 100

37°

39°

41°

43°

VDD = 5 V

VI = 10 mV
CL = 20 pF
See Figure 100

PHASE MARGIN

vs

FREE-AIR TEMPERATURE

m – Phase Margin

m

φ

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

37

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

†

Figure 64

0

28°

CL – Capacitive Load – pF

100

44°

20 40 60 80

30°

32°

34°

36°

38°

40°

42°

VDD = 5 V
VI = 10 mV
TA = 25°C
See Figure 100

PHASE MARGIN

vs

CAPACITIVE LOAD

m – Phase Margin

m

φ

Figure 65

1

0

Vn – Equivalent Input Noise Voltage – nV/Hz

f – Frequency – Hz

1000

300

50

100

150

200

250

10 100

See Figure 99

TA = 25°C

RS = 20 Ω

VDD = 5 V

EQUIVALENT INPUT NOISE VOLTAGE

vs

FREQUENCY

V

n

nV/ Hz

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

38

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

LOW-BIAS MODE

electrical characteristics at specified free-air temperature (unless otherwise noted)

TLC271C, TLC271AC, TLC271BC

PARAMETER

TEST

T

A

†

VDD = 5 V VDD = 10 V

UNIT

CONDITIONS

A

MIN TYP MAX MIN TYP MAX

25°C 1.1 10 1.1 10

TLC271C

Full range 12 12

p

V

O

= 1.4 V,

V

= 0 V,

25°C 0.9 5 0.9 5

VIOInput offset voltage

TLC271AC

IC

,

RS = 50 Ω,

Full range 6.5 6.5

mV

RI = 1 MΩ

25°C 0.24 2 0.26 2

TLC271BC

Full range 3 3

α

VIO

Average temperature coefficient of
input offset voltage

25°C to

70°C

1.1 1 µV/°C

p

V

= V

/2,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

ODD

,

VIC = VDD/2

70°C 7 300 8 300

pA

p

V

= V

/2,

25°C 0.6 0.7

p

IIBInput bias current (see Note 4)

ODD

,

VIC = VDD/2

70°C 40 600 50 600

pA

Common-mode input

25°C

–0.2

to

4

–0.3

to

4.2

–0.2

to

9

–0.3

to

9.2

V

V

ICR

voltage range (see Note 5)

Full range

–0.2

to

3.5

–0.2

to

8.5

V

25°C 3.2 4.1 8 8.9

V

OH

High-level output voltage

VID = 100 mV ,

0°C 3 4.1 7.8 8.9

V

RL= 1 MΩ

70°C 3 4.2 7.8 8.9
25°C 0 50 0 50

V

OL

Low-level output voltage

VID = –100 mV ,

0°C 0 50 0 50

mV

I

OL

=

0

70°C 0 50 0 50
25°C 50 520 50 870

A

VD

Large-signal differential

p

RL= 1 MΩ,

0°C 50 700 50 1030

V/mV

voltage am lification

See Note 6

70°C 50 380 50 660
25°C 65 94 65 97

CMRR Common-mode rejection ratio VIC = V

ICR

min

0°C 60 95 60 97

dB
70°C 60 95 60 97
25°C 70 97 70 97

k

SVR

Supply-voltage rejection ratio

VDD = 5 V to 10 V

0°C 60 97 60 97

dB

(∆VDD/∆VIO)

V

O

= 1.4

V

70°C 60 98 60 98

I

I(SEL)

Input current (BIAS SELECT) V

I(SEL)

= V

DD

25°C 65 95 nA

V

= V

/2

,

25°C 10 17 14 23

I

DD

Supply current

V

O

VDD/2,

VIC = VDD/2,

0°C 12 21 18 33

µA

No load

70°C 8 14 11 20

†

Full range is 0°C to 70°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

39

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

LOW-BIAS MODE

electrical characteristics at specified free-air temperature (unless otherwise noted)

TLC271I, TLC271AI, TLC271BI

PARAMETER

TEST

T

A

†

VDD = 5 V VDD = 10 V

UNIT

CONDITIONS

A

MIN TYP MAX MIN TYP MAX

25°C 1.1 10 1.1 10

TLC271I

Full range 13 13

p

V

O

= 1.4 V,

V

= 0 V,

25°C 0.9 5 0.9 5

VIOInput offset voltage

TLC271AI

IC

,

RS = 50 Ω,

Full range 7 7

mV

RL = 1 MΩ

25°C 0.24 2 0.26 2

TLC271BI

Full range 3.5 3.5

α

VIO

Average temperature coefficient
of input offset voltage

25°C to

85°C

1.1 1 µV/°C

p

V

= V

/2,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

ODD

,

VIC = VDD/2

85°C 24 1000 26 1000

pA

p

V

= V

/2,

25°C 0.6 0.7

p

IIBInput bias current (see Note 4)

ODD

,

VIC = VDD/2

85°C 200 2000 220 2000

pA

Common-mode input

25°C

–0.2

to

4

–0.3

to

4.2

–0.2

to

9

–0.3

to

9.2

V

V

ICR

voltage range (see Note 5)

Full range

–0.2

to

3.5

–0.2

to

8.5

V

25°C 3 4.1 8 8.9

V

OH

High-level output voltage

VID = 100 mV ,

–40°C 3 4.1 7.8 8.9

V

RL= 1 MΩ

85°C 3 4.2 7.8 8.9
25°C 0 50 0 50

V

OL

Low-level output voltage

VID = –100 mV,

–40°C 0 50 0 50

mV

I

OL

=

0

85°C 0 50 0 50
25°C 50 520 50 870

A

VD

Large-signal differential

p

RL= 1 MΩ

–40°C 50 900 50 1550

V/mV

voltage am lification

See Note 6

85°C 50 330 50 585
25°C 65 94 65 97

CMRR Common-mode rejection ratio VIC = V

ICR

min

–40°C 60 95 60 97

dB
85°C 60 95 60 98
25°C 70 97 70 97

k

SVR

Supply-voltage rejection ratio

VDD = 5 V to 10 V

–40°C 60 97 60 97

dB

(∆VDD/∆VIO)

V

O

= 1.4

V

85°C 60 98 60 98

I

I(SEL)

Input current (BIAS SELECT) V

I(SEL)

= V

DD

25°C 65 95 nA

V

= V

/2

,

25°C 10 17 14 23

I

DD

Supply current

V

O

VDD/2,

VIC = VDD/2,

–40°C 16 27 25 43

µA

No load

85°C 17 13 10 18

†

Full range is –40 to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

40

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

LOW-BIAS MODE

electrical characteristics at specified free-air temperature (unless otherwise noted)

TLC271M

PARAMETER

TEST

T

A

†

VDD = 5 V VDD = 10 V

UNIT

CONDITIONS

A

MIN TYP MAX MIN TYP MAX

p

VO = 1.4 V,
VIC = 0 V,

25°C 1.1 10 1.1 10

VIOInput offset voltage

RS = 50 Ω,
RL = 1 MΩ

Full range 12 12

mV

α

VIO

Average temperature coefficient
of input offset voltage

25°C to

125°C

1.4 1.4 µV/°C

p

V

= V

/2,

25°C 0.1 0.1 pA

IIOInput offset current (see Note 4)

ODD

,

VIC = VDD/2

125°C 1.4 15 1.8 15 nA

p

V

= V

/2,

25°C 0.6 0.7 pA

IIBInput bias current (see Note 4)

ODD

,

VIC = VDD/2

125°C 9 35 10 35 nA

Common-mode input

25°C

0

to

4

–0.3

to

4.2

0

to

9

–0.3

to

9.2

V

V

ICR

voltage range (see Note 5)

Full range

0

to

3.5

0

to

8.5

V

25°C 3.2 4.1 8 8.9

V

OH

High-level output voltage

VID = 100 mV ,

–55°C 3 4.1 7.8 8.8

V

RL= 1 MΩ

125°C 3 4.2 7.8 9

25°C 0 50 0 50

V

OL

Low-level output voltage

VID = –100 mV,

–55°C 0 50 0 50

mV

I

OL

=

0

125°C 0 50 0 50

25°C 50 520 50 870

A

VD

Large-signal differential

p

RL= 1 MΩ,

–55°C 25 1000 25 1775

V/mV

voltage am lification

See Note 6

125°C 25 200 25 380

25°C 65 94 65 97

CMRR Common-mode rejection ratio VIC = V

ICR

min

–55°C 60 95 60 97

dB

125°C 60 85 60 91

25°C 70 97 70 97

k

SVR

Supply-voltage rejection ratio

VDD = 5 V to 10 V

–55°C 60 97 60 97

dB

(∆VDD/∆VIO)

V

O

= 1.4

V

125°C 60 98 60 98

I

I(SEL)

Input current (BIAS SELECT) V

I(SEL)

= V

DD

25°C 65 95 nA

V

= V

/2

,

25°C 10 17 14 23

I

DD

Supply current

V

O

VDD/2,

VIC = VDD/2,

–55°C 17 30 28 48

µA

No load

125°C 7 12 9 15

†

Full range is –55°C to 125°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

41

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

LOW-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 5 V

PARAMETER TEST CONDITIONS T

A

TLC271C, TLC271AC,

TLC271BC

UNIT

A

MIN TYP MAX

25°C 0.03

V

I(PP)

= 1 V

0°C 0.04

RL = 1 MΩ,

p

()

70°C 0.03

SR

Slew rate at unity gain

C

L

= 20 pF,

See Fi

g

ure 98

25°C 0.03

V/µs

See Figure 98

V

I(PP)

= 2.5 V

0°C 0.03

()

70°C 0.02

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 68

nV/√Hz

25°C 5

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

0°C 6

kHz

R

L

= 1 MΩ,

See Figure 98

70°C 4.5
25°C 85

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

0°C

100

kHz

See Figure 100

70°C 65
25°C 34°

φ

m

Phase margin

V

I

= 10 mV,

p

f

=

B

1

,

0°C 36°

C

L

= 20 F,

See Figure 100

70°C 30°

operating characteristics at specified free-air temperature, VDD = 10 V

PARAMETER TEST CONDITIONS T

A

TLC271C, TLC271AC,

TLC271BC

UNIT

A

MIN TYP MAX

25°C 0.05

V

I(PP)

= 1 V

0°C 0.05

RL = 1 MΩ,

p

()

70°C 0.04

SR

Slew rate at unity gain

C

L

= 20 pF,

See Fi

g

ure 98

25°C 0.04

V/µs

See Figure 98

V

I(PP)

= 5.5 V

0°C 0.05

()

70°C 0.04

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 68

nV/√Hz

25°C 1

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

0°C 1.3

kHz

R

L

= 1 MΩ,

See Figure 98

70°C 0.9
25°C 110

B

1

Unity-gain bandwidth

V

I

= 10 mV,

CL = 20 pF,

0°C

125

kHz

See Figure 100

70°C 90
25°C 38°

φ

m

Phase margin

V

I

=

10 mV

,

p

f

=

B

1

,

0°C 40°

C

L

= 20 F,

See Figure 100

70°C 34°

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

42

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

LOW-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 5 V

PARAMETER TEST CONDITIONS T

A

TLC271I, TLC271AI,

TLC271BI

UNIT

A

MIN TYP MAX

25°C 0.03

V

I(PP)

= 1 V

–40°C 0.04

RL = 1 MΩ,

p

()

85°C 0.03

SR

Slew rate at unity gain

C

L

= 20 pF,

See Fi

g

ure 98

25°C 0.03

V/µs

See Figure 98

V

I(PP)

= 2.5 V

–40°C 0.04

()

85°C 0.02

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 68

nV/√Hz

25°C 5

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

–40°C 7

kHz

R

L

= 1 MΩ,

See Figure 98

85°C 4
25°C 85

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–40°C

130

MHz

See Figure 100

85°C 55
25°C 34°

φ

m

Phase margin

V

I

= 10 mV,

p

f

=

B

1

,

–40°C 38°

C

L

= 20 F,

See Figure 100

85°C 28°

operating characteristics at specified free-air temperature, VDD = 10 V

PARAMETER TEST CONDITIONS T

A

TLC271C, TLC271AC,

TLC271BC

UNIT

A

MIN TYP MAX

25°C 0.05

V

I(PP)

= 1 V

–40°C 0.06

RL = 1 MΩ,

p

()

85°C 0.03

SR

Slew rate at unity gain

C

L

= 20 pF,

See Fi

g

ure 98

25°C 0.04

V/µs

See Figure 98

V

I(PP)

= 5.5 V

–40°C 0.05

()

85°C 0.03

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 68

nV/√Hz

25°C 1

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

–40°C 1.4 kHz

R

L

= 1 MΩ,

See Figure 98

85°C 0.8
25°C 110

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–40°C

155 MHz

See Figure 100

85°C 80
25°C 38°

φ

m

Phase margin

V

I

=

10 mV,l

p

f

=

B

1

,

–40°C 42°

C

L

= 20 F,

See Figure 100

85°C 32°

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

43

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

LOW-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 5 V

TLC271M

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 0.03

V

I(PP)

= 1 V

–55°C 0.04

RL = 1 MΩ,

p

()

125°C 0.02

SR

Slew rate at unity gain

C

L

=

20 pF

,

See Fi

g

ure 98

25°C 0.03

V/µs

See Figure 98

V

I(PP)

= 2.5 V

–55°C 0.04

()

125°C 0.02

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 68

nV/√Hz

25°C 5

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

–55°C 8

kHz

R

L

= 1 MΩ,

See Figure 98

125°C 3

25°C 85

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–55°C

140

kHz

See Figure 100

125°C 45

25°C 34°

φ

m

Phase margin

V

I

= 10 mV,

p

f

=

B

1

,

–55°C 39°

C

L

= 20 F,

See Figure 100

125°C 25°

operating characteristics at specified free-air temperature, VDD = 10 V

TLC271M

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 0.05

V

I(PP)

= 1 V

–55°C 0.06

RL = 1 MΩ,

p

()

125°C 0.03

SR

Slew rate at unity gain

C

L

=

20 pF

,

See Fi

g

ure 98

25°C 0.04

V/µs

See Figure 98

V

I(PP)

= 5.5 V

–55°C 0.06

()

125°C 0.03

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 99

RS = 20 Ω,

25°C 68

nV/√Hz

25°C 1

B

OM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

–55°C 1.5

kHz

R

L

= 1 MΩ,

See Figure 98

125°C 0.7

25°C 110

B

1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF,

–55°C

165

kHz

See Figure 100

125°C 70

25°C 38°

φ

m

Phase margin

V

I

= 10 mV,

p

f

=

B

1

,

–55°C 43°

C

L

= 20 F,

See Figure 100

125°C 29°

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

44

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

Table of Graphs

FIGURE

V

IO

Input offset voltage Distribution 66, 67

α

VIO

T emperature coef ficient Distribution 68, 69

vs High-level output current 70, 71

V

OH

High-level output voltage

vs High level out ut current

vs Supply voltage

70, 71

72

OH

gg

yg

vs Free-air temperature 73

-

p

p

vs Common mode in ut voltage

vs Differential input voltage

74, 75

76

VOLLow-level output voltage

g

vs Free-air temperature 77
vs Low-level output current 78, 79

vs Supply voltage 80

A

VD

Large-signal differential voltage amplification

vs Su ly voltage

vs Free-air temperature

80

81

VD

gg g

vs Frequency 92, 93

I

IB

Input bias current vs Free-air temperature 82

I

IO

Input offset current vs Free-air temperature 82

V

I

Maximum input voltage vs Supply voltage 83

pp

vs Supply voltage 84

IDDSupply current

yg

vs Free-air temperature 85
vs Supply voltage 86

SR

Slew rate

yg

vs Free-air temperature 87

Bias-select current vs Supply voltage 88

V

O(PP)

Maximum peak-to-peak output voltage vs Frequency 89

vs Free-air temperature 90

B1Unity-gain bandwidth

vs Supply voltage 91
vs Supply voltage 94

φ

m

Phase margin

vs Su ly voltage

vs Free-air temperature

94

95

φ

m

g

vs Capacitive load 96

V

n

Equivalent input noise voltage vs Frequency 97
Phase shift vs Frequency 92, 93

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

45

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

†

Figure 66

–5

0

Percentage of Units – %

VIO – Input Offset Voltage – mV

5

70

–4 –3 –2 –1 0 1 2 3 4

10

20

30

40

50

60

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

VDD = 5 V
TA = 25°C
P Package

905 Amplifiers Tested From 6 Wafer Lots

Figure 67

60

50

40

30

20

10

43210–1–2–3–4

70

5

VIO – Input Offset Voltage – mV

Percentage of Units – %

0

–5

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

P Package

TA = 25°C

VDD = 10 V

905 Amplifiers Tested From 6 Wafer Lots

Figure 68

60

50

40

30

20

10

86420–2–4–6–8

70

10

Percentage of Units – %

0

–10

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

α

VIO

– Temperature Coefficient – µV/°C

(1) 12.1 µV/°C

(1) 19.2 µV/°C

Outliers:

P Package

TA = 25°C to 125°C

VDD = 5 V

356 Amplifiers Tested From 8 Wafer Lots

Figure 69

–10

0

Percentage of Units – %

α

VIO

– Temperature Coefficient – µV/°C

10

70

–8 –6 –4 –2 0 2 4 6 8

10

20

30

40

50

60

DISTRIBUTION OF TLC271

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

356 Amplifiers Tested From 8 Wafer Lots
VDD = 10 V

P Package
Outliers:
(1) 18.7 µV/°C

(1) 11.6 µV/°C

TA = 25°C to 125°C

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

46

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

†

Figure 70

0

0

VOH– High-Level Output Voltage – V

IOH – High-Level Output Current – mA

–10

5

–2 –4 –6 –8

1

2

3

4

VDD = 5 V

VDD = 3 V

VDD = 4 V

HIGH-LEVEL OUTPUT VOLTAGE

vs

HIGH-LEVEL OUTPUT CURRENT

V

OH

TA = 25°C

VID = 100 mV

Figure 71

0

0

IOH – High-Level Output Current – mA

–40

16

–10 –20 –30

2

4

6

8

10

12

14

TA = 25°C

VID = 100 mV

VDD = 16 V

VDD = 10 V

HIGH-LEVEL OUTPUT VOLTAGE

vs

HIGH-LEVEL OUTPUT CURRENT

–35–25–15–5

VOH– High-Level Output Voltage – V

V

OH

Figure 72

0

0

VDD – Supply Voltage – V

16

16

2 4 6 8 10 12 14

2

4

6

8

10

12

14

VID = 100 mV
RL = 1 MΩ
TA = 25°C

HIGH-LEVEL OUTPUT VOLTAGE

vs

SUPPLY VOLTAGE

VOH– High-Level Output Voltage – V

V

OH

Figure 73

–75

–2.4

TA – Free-Air Temperature – °C

125

–1.6

–50 –25 0 25 50 75 100

–2.3

–2.2

–2.1

–2

–1.9

–1.8

–1.7

IOH = –5 mA
VID = 100 mV

VDD = 5 V

VDD = 10 V

HIGH-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

VOH– High-Level Output Voltage – V

V

OH

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

47

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

†

Figure 74

0

300

VOL – Low-Level Output V oltage – mV

VIC – Common-Mode Input Voltage – V

4

700

123

400

500

600

LOW-LEVEL OUTPUT VOLTAGE

vs

COMMON-MODE INPUT VOLTAGE

650

550

450

350

V

OL

TA = 25°C

IOL = 5 mA

VDD = 5 V

VID = –1 V

VID = –100 mV

Figure 75

250

0

VIC – Common-Mode Input Voltage – V

300

350

400

450

500

246810

LOW-LEVEL OUTPUT VOLTAGE

vs

COMMON-MODE INPUT VOLTAGE

13 579

VOL – Low-Level Output V oltage – mV

V

OL

VDD = 10 V
IOL = 5 mA
TA = 25°C

VID = –1 V
VID = –2.5 V

VID = –100 mV

Figure 76

LOW-LEVEL OUTPUT VOLTAGE

vs

DIFFERENTIAL INPUT VOLTAGE

0

VID – Differential Input Voltage – V

–10–2 –4 –6 –8

800

700

600

500

400

300

200

100

0

–1 –3 –5 –7 –9

VOL – Low-Level Output V oltage – mV

V

OL

IOL = 5 mA
VIC = VID/2
TA = 25°C

VDD = 10 V

VDD = 5 V

Figure 77

–75

0

TA – Free-Air Temperature – °C

125

900

–50 –25 0 25 50 75 100

100

200

300

400

500

600

700

800

LOW-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

VOL – Low-Level Output V oltage – mV

V

OL

VIC = 0.5 V

VID = –1 V

IOL = 5 mA

VDD = 10 V

VDD = 5 V

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

48

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

†

Figure 78

0

1

8

0

1 2 3 4 5 6 7

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VID = –1 V
VIC = 0.5 V

TA = 25°C

VDD = 3 V

VDD = 4 V

VDD = 5 V

LOW-LEVEL OUTPUT VOLTAGE

vs

LOW-LEVEL OUTPUT CURRENT

IOL – Low-Level Output Current – mA

VOL – Low-Level Output V oltage – V

V

OL

Figure 79

0

IOL – Low-Level Output Current – mA

3

30

0

5 10 15 20 25

0.5

1

1.5

2

2.5

TA = 25°C

VIC = 0.5 V

VID = –1 V

VDD = 10 V

VDD = 16 V

LOW-LEVEL OUTPUT VOLTAGE

vs

LOW-LEVEL OUTPUT CURRENT

VOL – Low-Level Output V oltage – V

V

OL

Figure 80

0

VDD – Supply Voltage – V

2000

16

0

246 8 10 12 14

200

400

600

800

1000

1200

1400

1600

1800

TA = –55°C

–40°C

TA = 0°C

25°C

70°C

85°C

125°C

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

SUPPLY VOLTAGE

AVD – Large-Signal Differential

A

VD

Voltage Amplification – V/mV

RL = 1 MΩ

Figure 81

1007550250–25–50

0

125

TA – Free-Air Temperature – °C

–75

VDD = 5 V

VDD = 10 V

1800

1600

1400

1200

1000

800

600

400

200

2000

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

FREE-AIR TEMPERATURE

AVD – Large-Signal Differential

A

VD

Voltage Amplification – V/mV

RL = 1 MΩ

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

49

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

†

Figure 82

0.1
125

10000

45 65 85 105

1

10

100

1000

25

TA – Free-Air Temperature – °C

INPUT BIAS CURRENT AND INPUT OFFSET

CURRENT

vs

FREE-AIR TEMPERATURE

VDD = 10 V
VIC = 5 V
See Note A

35 55 75 95 115

I

IB

I

IO

IIB and IIO – Input Bias and

IB

I

I

IO

Input Offset Currents – pA

NOTE A: The typical values of input bias current and input offset

current below 5 pA were determined mathematically.

Figure 83

0

VDD – Supply Voltage – V

16

16

0

246 8 10 12 14

2

4

6

8

10

12

14

MAXIMUM INPUT VOLTAGE

vs

SUPPLY VOLTAGE

TA = 25°C

VI – Maximum Input Voltage – V

V

I

Figure 84

TA = –55°C

25°C

70°C

125°C

0

IDD – Supply Current – mA

VDD – Supply Voltage – V

45

16

0

2 4 6 8 10 12 14

5

10

15

20

25

30

35

40

–40°C

0°C

No Load

VO = VDD/2

SUPPLY CURRENT

vs

SUPPLY VOLTAGE

ÁÁ

DD

I

Aµ

Figure 85

VO = VDD/2
No Load

VDD = 10 V

VDD = 5 V

–75

TA – Free-Air Temperature – °C

30

125

0

–50 –25 0 25 50 75 100

5

10

15

20

25

SUPPLY CURRENT

vs

FREE-AIR TEMPERATURE

IDD – Supply Current – mA

DD

I

Aµ

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

50

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

†

Figure 86

SR – Slew Rate – V/s

CL = 20 pF

RL = 1 MΩ

V

I(PP)

= 1 V

AV = 1

See Figure 98

TA= 25°C

0

VDD – Supply Voltage – V

0.07

16

0.00
2 4 6 8 10 12 14

0.01

0.02

0.03

0.04

0.05

0.06

SLEW RATE

vs

SUPPLY VOLTAGE

sµ

Figure 87

SLEW RATE

vs

FREE-AIR TEMPERATURE

V

I(PP)

= 5.5 V

VDD = 10 V

VDD = 5 V
V

I(PP)

= 1 V

VDD = 5 V
V

I(PP)

= 2.5 V

VDD = 10 V
V

I(PP)

= 1 V

–75

TA – Free-Air Temperature – °C

0.07

125

0.00
–50 –25 0 25 50 75 100

0.01

0.02

0.03

0.04

0.05

0.06

CL = 20 pF

RL = 1 MΩ

See Figure 98

AV = 1

SR – Slew Rate – V/s

sµ

Figure 88

0

Bias-Select Current – nA

VDD – Supply Voltage – V

150

16

0

2 4 6 8 10 12 14

30

60

90

120

TA = 25°C

BIAS-SELECT CURRENT

vs

SUPPLY VOLTAGE

135

105

75

45

15

V

I(SEL)

= V

DD

Figure 89

0.1
f – Frequency – kHz

10

100

0

1

2

3

4

5

6

7

8

9

110

VDD = 10 V

VDD = 5 V

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE

vs

FREQUENCY

See Figure 98

RL = 1 MΩ

TA = 125°C
TA = 25°C
TA = –55°C

– Maximum Peak-to-Peak Output Voltage – V

V

O(PP)

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B

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TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

†

Figure 90

UNITY-GAIN BANDWIDTH

vs

FREE-AIR TEMPERATURE

VDD = 5 V
VI = 10 mV

CL = 20 pF
See Figure 100

–75

B1 – Unity-Gain Bandwidth – kHz

TA – Free-Air Temperature – °C

150

125

30

–50 –25 0 25 50 75 100

50

70

90

110

130

B

1

Figure 91

0

VDD – Supply Voltage – V

140

16

50

2 468 10 12 14

60

70

80

90

100

110

120

130

TA = 25°C

CL = 20 pF

VI = 10 mV

UNITY-GAIN BANDWIDTH

vs

SUPPLY VOLTAGE

B1 – Unity-Gain Bandwidth – kHz

B

1

See Figure 100

1

f – Frequency – Hz

1 M

0.1
10 100 1 k 10 k 100 k

1

10

1

10

2

10

3

10

4

10

5

10

6

150°

120°

90°

60°

30°

0°

180°

Phase Shift

TA = 25°C

RL = 1 MΩ

VDD = 5 V

A

VD

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

10

7

Phase Shift

AVD – Large-Signal Differential

A

VD

Voltage Amplification

Figure 92

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC271, TLC271A, TLC271B
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TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

†

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

VDD = 10 V
RL = 1 MΩ
TA = 25°C

Phase Shift

180°

0°

30°

60°

90°

120°

150°

10

6

10

4

10

3

10

2

10

1

1

100 k10 k1 k10010

0.1
1 M

f – Frequency – Hz

1

10

5

10

7

A

VD

Phase Shift

AVD – Large-Signal Differential

A

VD

Voltage Amplification

Figure 93

Figure 94

PHASE MARGIN

vs

SUPPLY VOLTAGE

0

m – Phase Margin

VDD – Supply Voltage – V

42°

16

30°

2 4 6 8 10 12 14

32°

34°

36°

38°

40°

See Figure 100

VI = 10 mV

TA = 25°C

CL = 20 pF

m

φ

Figure 95

See Figure 100

VI = 10 mV
CL = 20 pF

VDD = 5 mV

–75

TA – Free-Air Temperature – °C

40°

125

20°

–50 –25 0 25 50 75 100

24°

28°

32°

36°

PHASE MARGIN

vs

FREE-AIR TEMPERATURE

38°

34°

30°

26°

22°

m – Phase Margin

m

φ

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

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TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

†

Figure 96

VDD = 5 mV

TA = 25°C
See Figure 100

VI = 10 mV

0

CL – Capacitive Load – pF

37°

100

25°

20 40 60 80

27°

29°

31°

33°

35°

PHASE MARGIN

vs

CAPACITIVE LOAD

10 30 50 70 90

m – Phase Margin

m

φ

Figure 97

75

1

VN – Equivalent Input Noise Voltage – nV/Hz

f – Frequency – Hz

200

1000

0

25

50

100

125

150

175

10 100

EQUIVALENT INPUT NOISE VOLTAGE

vs

FREQUENCY

V

n

nV/ Hz

TA = 25°C

RS = 20Ω

VDD = 5 V

See Figure 99

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

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PARAMETER MEASUREMENT INFORMATION

single-supply versus split-supply test circuits

Because the TLC271 is optimized for single-supply operation, circuit configurations used for the various tests
often present some inconvenience since the input signal, in many cases, must be offset from ground. This
inconvenience can be avoided by testing the device with split supplies and the output load tied to the negative
rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either circuit gives
the same result.

+

V

DD

C

L

R

L

V

O

V

I

V

I

V

O

R

L

C

L

–

+

V

DD+

V

DD–

(a) SINGLE SUPPLY (b) SPLIT SUPPLY

–

Figure 98. Unity-Gain Amplifier

V

DD

–

+

V

DD+

–

+

1/2 V

DD

20 Ω

V

O

2 kΩ

20 Ω

V

DD–

20 Ω 20 Ω

2 kΩ

V

O

(a) SINGLE SUPPL Y (b) SPLIT SUPPL Y

Figure 99. Noise-Test Circuit

100 Ω

V

DD

–

+

10 kΩ

V

O

C

L

1/2 V

DD

V

I

V

I

C

L

100 Ω

V

O

10 kΩ

–

+

V

DD+

V

DD–

(a) SINGLE SUPPL Y (b) SPLIT SUPPL Y

Figure 100. Gain-of-100 Inverting Amplifier

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PARAMETER MEASUREMENT INFORMATION

input bias current

Because of the high input impedance of the TLC271 operational amplifiers, attempts to measure the input bias
current can result in erroneous readings. The bias current at normal room ambient temperature is typically less
than 1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions are of fered to avoid
erroneous measurements:

1. Isolate the device from other potential leakage sources. Use a grounded shield around and between the
device inputs (see Figure 101). Leakages that would otherwise flow to the inputs are shunted away.

2. Compensate for the leakage of the test socket by actually performing an input bias current test (using a
picoammeter) with no device in the test socket. The actual input bias current can then be calculated by
subtracting the open-socket leakage readings from the readings obtained with a device in the test socket.

One word of caution: many automatic testers as well as some bench-top operational amplifier testers us the
servo-loop technique with a resistor in series with the device input to measure the input bias current (the voltage
drop across the series resistor is measured and the bias current is calculated). This method requires that a
device be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is not
feasible using this method.

V = V

IC

41

58

Figure 101. Isolation Metal Around Device inputs (JG and P packages)

low-level output voltage

To obtain low-supply-voltage operation, some compromise is necessary in the input stage. This compromise
results in the device low-level output being dependent on both the common-mode input voltage level as well
as the differential input voltage level. When attempting to correlate low-level output readings with those quoted
in the electrical specifications, these two conditions should be observed. If conditions other than these are to
be used, please refer to the Typical Characteristics section of this data sheet.

input offset voltage temperature coefficient

Erroneous readings often result from attempts to measure temperature coefficient of input offset voltage. This
parameter is actually a calculation using input offset voltage measurements obtained at two different
temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device
and the test socket. This moisture results in leakage and contact resistance which can cause erroneous input
offset voltage readings. The isolation techniques previously mentioned have no effect on the leakage since the
moisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that these
measurements be performed at temperatures above freezing to minimize error.

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PARAMETER MEASUREMENT INFORMATION

full-power response

Full-power response, the frequency above which the amplifier slew rate limits the output voltage swing, is often
specified two ways: full-linear response and full-peak response. The full-linear response is generally
measuredby monitoring the distortion level of the output while increasing the frequency of a sinusoidal input
signal until the maximum frequency is found above which the output contains significant distortion. The full-peak
response is defined as the maximum output frequency, without regard to distortion, above which full
peak-to-peak output swing cannot be maintained.

Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified
in this data sheet and is measured using the circuit of Figure 98. The initial setup involves the use of a sinusoidal
input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is
increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same
amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained
(Figure 102). A square wave is used to allow a more accurate determination of the point at which the maximum
peak-to-peak output is reached.

(a) f = 100 Hz (b) BOM > f > 100 Hz (c) f = B

OM

(d) f > B

OM

Figure 102. Full-Power-Response Output Signal

test time

Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume,
short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET
devices, and require longer test times than their bipolar and BiFET counterparts. The problem becomes more
pronounced with reduced supply levels and lower temperatures.

APPLICATION INFORMATION

single-supply operation

While the TLC271 performs well using dual power
supplies (also called balanced or split supplies),
the design is optimized for single-supply
operation. This includes an input common mode
voltage range that encompasses ground as well
as an output voltage range that pulls down to
ground. The supply voltage range extends down
to 3 V (C-suffix types), thus allowing operation
with supply levels commonly available for TTL and
HCMOS; however, for maximum dynamic range,
16-V single-supply operation is recommended.

–

+

R4

V

O

V

DD

R2

R1

V

I

V

ref

R3

C

0.01 µF

V

ref

+

V

DD

R3

R1)R3

VO+

(V

ref

*

VI)

R4
R2

)

V

ref

Figure 103. Inverting Amplifier With Voltage

Reference

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APPLICATION INFORMATION

single-supply operation (continued)

Many single-supply applications require that a voltage be applied to one input to establish a reference level that
is above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 103).
The low input bias current consumption of the TLC271 permits the use of very large resistive values to
implement the voltage divider, thus minimizing power consumption.

The TLC271 works well in conjunction with digital logic; however, when powering both linear devices and digital
logic from the same power supply, the following precautions are recommended:

1. Power the linear devices from separate bypassed supply lines (see Figure 104); otherwise, the linear device
supply rails can fluctuate due to voltage drops caused by high switching currents in the digital logic.

2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive
decoupling is often adequate; however, RC decoupling may be necessary in high-frequency applications.

(b) SEPARATE BYPASSED SUPPL Y RAILS (preferred)

(a) COMMON SUPPLY RAILS

Logic

–
+

Logic Logic

Power
Supply

Supply

Power

LogicLogic

–
+

Logic

OUT

OUT

Figure 104. Common Versus Separate Supply Rails

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APPLICATION INFORMATION

input offset voltage nulling

The TLC271 offers external input offset null control. Nulling of the input off set voltage may be achieved by
adjusting a 25-kΩ potentiometer connected between the offset null terminals with the wiper Connected as
shown in Figure 105. The amount of nulling range varies with the bias selection. In the high-bias mode, the
nulling range allows the maximum offset voltage specified to be trimmed to zero. In low-bias and medium-bias
modes, total nulling may not be possible.

25 kΩ

N2

V

DD

N2

N1

25 kΩ

GND

(a) SINGLE SUPPL Y (b) SPLIT SUPPLY

–

+

–

+

N1

OUTOUT

IN–

IN+

IN–

IN+

Figure 105. Input Offset Voltage Null Circuit

bias selection

Bias selection is achieved by connecting the bias select pin to one of the three voltage levels (see Figure 106).
For medium-bias applications, R is recommended that the bias select pin be connected to the mid-point
between the supply rails. This is a simple procedure in split-supply applications, since this point is ground. In
single-supply applications, the medium-bias mode necessitates using a voltage divider as indicated. The use
of large-value resistors in the voltage divider reduces the current drain of the divider from the supply line.
However, large-value resistors used in conjunction with a large-value capacitor requires significant time to
charge up to the supply midpoint after the supply is switched on. A voltage other than the midpoint may be used
if it is within the voltages specified in the table of Figure 106.

0.01 µF

1 MΩ

V

DD

Low

Medium

High

1 MΩ

To BIAS SELECT

BIAS MODE

BIAS-SELECT VOLTAGE

(single supply)

Low

Medium

High

V

DD

1 V to VDD – 1 V

GND

Figure 106. Bias Selection for Single-Supply Applications

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APPLICATION INFORMATION

input characteristics

The TLC271 is specified with a minimum and a maximum input voltage that, if exceeded at either input, could
cause the device to malfunction. Exceeding this specified range is a common problem, especially in
single-supply operation. Note that the lower range limit includes the negative rail, while the upper range limit
is specified at V

DD

– 1 V at TA = 25°C and at VDD – 1.5 V at all other temperatures.

The use of the polysilicon-gate process and the careful input circuit design gives the TLC271 very good input
offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage drift in CMOS
devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant
implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the
polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. The offset
voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month of operation.

Because of the extremely high input impedance and resulting low bias current requirements, the TLC271 is well
suited for low-level signal processing; however, leakage currents on printed circuit boards and sockets can
easily exceed bias current requirements and cause a degradation in device performance. It is good practice to
include guard rings around inputs (similar to those of Figure 101 in the Parameter Measurement Information
section). These guards should be driven from a low-impedance source at the same voltage level as the
common-mode input (see Figure 107).

The inputs of any unused amplifiers should be tied to ground to avoid possible oscillation.

noise performance

The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage
differential amplifier . The low input bias current requirements of the TLC271 results in a very low noise current,
which is insignificant in most applications. This feature makes the devices especially favorable over bipolar
devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise
currents.

–

+

V

I

V

O

V

O

–

+

V

O

V

I

–

+

V

I

(a) NONINVERTING AMPLIFIER (b) INVERTING AMPLIFIER (c) UNITY-GAIN AMPLIFIER

Figure 107. Guard-Ring Schemes

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APPLICATION INFORMATION

feedback

Operational amplifier circuits almost always
employ feedback, and since feedback is the first
prerequisite for oscillation, a little caution is
appropriate. Most oscillation problems result from
driving capacitive loads and ignoring stray input
capacitance. A small-value capacitor connected
in parallel with the feedback resistor is an effective
remedy (see Figure 108). The value of this
capacitor is optimized empirically.

electrostatic discharge protection

The TLC271 incorporates an internal electrostatic-discharge (ESD) protection circuit that prevents functional
failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care should be exercised,
however, when handling these devices as exposure to ESD may result in the degradation of the device
parametric performance. The protection circuit also causes the input bias currents to be temperature dependent
and have the characteristics of a reverse-biased diode.

latch-up

Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC271 inputs
and output were designed to withstand –100-mA surge currents without sustaining latchup; however,
techniques should be used to reduce the chance of latch-up whenever possible. Internal protection diodes
should not by design be forward biased. Applied input and output voltage should not exceed the supply voltage
by more than 300 mV . Care should be exercised when using capacitive coupling on pulse generators. Supply
transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the supply rails
as close to the device as possible.

The current path established if latch-up occurs is usually between the positive supply rail and ground and can
be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply
voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the
forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of
latch-up occurring increases with increasing temperature and supply voltages.

output characteristics

The output stage of the TLC271 is designed to
sink and source relatively high amounts of current
(see Typical Characteristics). If the output is
subjected to a short-circuit condition, this high
current capability can cause device damage
under certain conditions. Output current capability
increases with supply voltage.

–

+

Figure 108. Compensation for Input

Capacitance

V

O

–

+

2.5 V

V

O

C

L

– 2.5 V

V

I

TA = 25°C
f = 1 kHz
V

I(PP)

= 1 V

Figure 109. Test Circuit for Output

Characteristics

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APPLICATION INFORMATION

output characteristics (continued)

All operating characteristics of the TLC271 were measured using a 20-pF load. The devices drive higher
capacitive loads; however, as output load capacitance increases, the resulting response pole occurs at lower
frequencies, thereby causing ringing, peaking, or even oscillation (see Figures 110, 111, and 112). In many
cases, adding some compensation in the form of a series resistor in the feedback loop alleviates the problem.

(a) CL = 20 pF, RL = NO LOAD (b) CL = 130 pF, RL = NO LOAD

(c) CL = 150 pF, RL = NO LOAD

Figure 110. Effect of Capacitive Loads in High-Bias Mode

(c) CL = 190 pF, RL = NO LOAD

(b) CL = 170 pF, RL = NO LOAD(a) CL = 20 pF, RL = NO LOAD

Figure 111. Effect of Capacitive Loads in Medium-Bias Mode

(a) CL = 20 pF, RL = NO LOAD (b) CL = 260 pF, RL = NO LOAD (c) CL = 310 pF, RL = NO LOAD

Figure 112. Effect of Capacitive Loads in Low-Bias Mode

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APPLICATION INFORMATION

output characteristics (continued)

Although the TLC271 possesses excellent high-level output voltage and current capability, methods are
available for boosting this capability , if needed. The simplest method involves the use of a pullup resistor (R

P

)
connected from the output to the positive supply rail (see Figure 1 13). There are two disadvantages to the use
of this circuit. First, the NMOS pulldown transistor, N4 (see equivalent schematic) must sink a comparatively
large amount of current. In this circuit, N4 behaves like a linear resistor with an on-resistance between
approximately 60 Ω and 180 Ω, depending on how hard the operational amplifier input is driven. With very low
values of R

P

, a voltage offset from 0 V at the output occurs. Secondly, pullup resistor RP acts as a drain load
to N4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying the
output current.

RP+

VDD–V

O

IF)

IL)

I

P

V

I

V

DD

R

P

V

O

R2

R1 R

L

I

P

I

F

I

L

IP = Pullup current required
by the operational amplifier
(typically 500 µA)

–

+

Figure 113. Resistive Pullup to Increase V

OH

5 V

BIAS SELECT

0.016 µF

Low Pass

High Pass

Band Pass

R = 5 kΩ(3/d-1)
(see Note A)

0.016 µF

BIAS SELECT

5 V

10 kΩ

10 kΩ

10 kΩ

5 V

BIAS SELECT

V

I

5 kΩ

10 kΩ

10 kΩ

–

+

TLC271

–

+

TLC271

–

+

TLC271

NOTE B: d = damping factor, I/O

Figure 114. State-Variable Filter

TLC271, TLC271A, TLC271B

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APPLICATION INFORMATION

output characteristics (continued)

BIAS
SELECT

R1, 100 kΩ

9 V

100 kΩ

C = 0.1 µF

R3, 47 kΩ

10 kΩ

10 kΩ

BIAS SELECT

VO (see Note B)

9 V

VO (see Note A)

R2

9 V

FO+

1

4C(R2)

ƪ

R1
R3

ƫ

–

+

TLC271

–

+

TLC271

NOTES: A. V

O(PP)

= 8 V

B. V

O(PP)

= 4 V

Figure 115. Single-Supply Function Generator

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APPLICATION INFORMATION (HIGH-BIAS MODE)

100 kΩ10 kΩ

5 V

–5 V

V

I–

5 V

V

I+

–5 V

5 V

10 kΩ 95 kΩ

10 kΩ

BIAS
SELECT

BIAS SELECT

BIAS
SELECT

V

O

R1, 10 kΩ
(see Note A)

–5 V

–

+

TLC271

–

+

TLC271

–

+

TLC271

NOTE A: CMRR adjustment must be noninductive.

Figure 116. Low-Power Instrumentation Amplifier

f

NOTCH

+

1

2pRC

BIAS SELECT

5 V

V

I

V

O

R

10 MΩ

2C

540 pF

10 MΩ

R

C

270 pF

C

270 pF

5 MΩ

R/2

–

+

TLC271

Figure 117. Single-Supply Twin-T Notch Filter

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

65

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION (HIGH-BIAS MODE)

V

I

(see Note A)

1.2 kΩ

4.7 kΩ

0.1 µF

22 kΩ

47 kΩ

0.01 µF

TIS 193

15 Ω

0.47 µF

100 kΩ

1 kΩ

BIAS SELECT

20 kΩ

TL431

TIP31

10 kΩ

250 µF,

25 V

V

O

(see Note B)

110 Ω

–

+

TLC271

NOTES: A. VI = 3.5 to 15 V

B. VO = 2.0 V, 0 to 1 A

+

–

Figure 118. Logic-Array Power Supply

BIAS
SELECT

100 kΩ

V

O

12 V

N.O.

Reset

0.5 µF

Mylar

H.P.

5082-2835

12 V

BIAS
SELECT

V

I

–

+

TLC271

–

+

TLC271

Figure 119. Positive-Peak Detector

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

66

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION (MEDIUM-BIAS MODE)

NOTES: A. V

O(PP)

= 2 V

fo+

1

2pR1R2C1C2

Ǹ

R2

68 kΩ

2.2 nF

C2

V

O

1N4148

470 kΩ

100 kΩ

C1

2.2 nF

R1

68 kΩ

47 kΩ

BIAS
SELECT

2.5 V

100 kΩ

1 µF

100 kΩ

5 V

–

+

TLC271

B.

Figure 120. Wein Oscillator

2.5 V

SELECT

BIAS

0.22 µF

100 kΩ

100 kΩ

5 V

0.1 µF

10 kΩ

1 MΩ

0.01 µF

1 MΩ

V

I

V

O

–

+

TLC271

Figure 121. Single-Supply AC Amplifier

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

67

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION (MEDIUM-BIAS MODE)

SELECT

BIAS

2.5 V

100 kΩ

1 µF

100 kΩ

100 kΩ

Gain Control

1 MΩ

1 kΩ

10 kΩ

5 V

1 µF

(see Note A)

–

+

TLC271

NOTE A: Low to medium impedance dynamic mike

– +

– +

0.1 µF

+–

Figure 122. Microphone Preamplifier

SELECT

BIAS

VDD/2

V

DD

10 MΩ

V

O

V

REF

150 pF

100 kΩ

15 nF

SELECT

BIAS

VDD/2

V

DD

1 kΩ

–

+

TLC271

–

+

TLC271

NOTES: A. NOTES: VDD = 4 V to 15 V

B. V

ref

= 0 V to VDD–2 V

Figure 123. Photo-Diode Amplifier With Ambient Light Rejection

–

+

TLC271

2N3821

I

S

5 V

2.5 V

BIAS
SELECT

R

V

I

IS+

V

I

R

NOTES: A. VI = 0 V TO 3 V

B.

Figure 124. Precision Low-Current Sink

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

68

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION (LOW-BIAS MODE)

TLC4066

V

DD

BIAS SELECT

V

I

90 kΩ

9 kΩ

X1
1

1

B

V

DD

V

I

S1

S2

C
A

C

A

2

X2

2

B

1 kΩ

Analog
Switch

+

–

TLC271

A

V

Select S

1

S

2

10 100

NOTE A: VDD = 5 V to 12 V

Figure 125. Amplifier With Digital Gain Selection

5 V

500 kΩ

500 kΩ

5 V

500 kΩ

0.1 µF

500 kΩ

V

O2

V

O1

BIAS
SELECT

BIAS SELECT

–

+
TLC271

+

–

TLC271

Figure 126. Multivibrator

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

69

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION (LOW-BIAS MODE)

10 kΩ

V

O

100 kΩ

BIAS SELECT

20 kΩ

V

I

–

+

TLC271

V

DD

NOTE A: VDD = 5 V to 16 V

Figure 127. Full-Wave Rectifier

Set

100 kΩ

V

DD

BIAS
SELECT

10 kΩ

100 kΩ

Reset

33 Ω

+

–

TLC271

NOTE A: VDD = 5 V to 16 V

Figure 128. Set/Reset Flip-Flop

BIAS
SELECT

5 V

0.016 µF

10 kΩ10 kΩ

V

O

0.016 µF

V

I

+

–

TLC271

NOTE A: Normalized to FC = 1 kHz and RL = 10 kΩ

Figure 129. Two-Pole Low-Pass Butterworth Filter

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

70

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MECHANICAL INFORMATION

D (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE

14 PIN SHOWN

4040047/D 10/96

0.228 (5,80)

0.244 (6,20)

0.069 (1,75) MAX

0.010 (0,25)

0.004 (0,10)

1

14

0.014 (0,35)

0.020 (0,51)

A

0.157 (4,00)

0.150 (3,81)

7

8

0.044 (1,12)

0.016 (0,40)

Seating Plane

0.010 (0,25)

PINS **

0.008 (0,20) NOM

A MIN

A MAX

DIM

Gage Plane

0.189

(4,80)

(5,00)

0.197

8

(8,55)

(8,75)

0.337

14

0.344

(9,80)

16

0.394

(10,00)

0.386

0.004 (0,10)

M

0.010 (0,25)

0.050 (1,27)

0°–8°

NOTES: A. All linear dimensions are in inches (millimeters).

B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
D. Falls within JEDEC MS-012

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

71

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MECHANICAL INFORMATION

FK (S-CQCC-N**) LEADLESS CERAMIC CHIP CARRIER

4040140/D 10/96

28 TERMINAL SHOWN

B

0.358

(9,09)

MAX

(11,63)

0.560

(14,22)

0.560

0.458

0.858

(21,8)

1.063

(27,0)

(14,22)

A

NO. OF

MINMAX

0.358

0.660

0.761

0.458

0.342
(8,69)

MIN

(11,23)

(16,26)

0.640

0.739

0.442

(9,09)

(11,63)

(16,76)

0.962

1.165

(23,83)

0.938

(28,99)

1.141

(24,43)

(29,59)

(19,32)(18,78)

**

20

28

52

44

68

84

0.020 (0,51)

TERMINALS

0.080 (2,03)

0.064 (1,63)

(7,80)

0.307

(10,31)

0.406

(12,58)

0.495

(12,58)

0.495

(21,6)

0.850

(26,6)

1.047

0.045 (1,14)

0.045 (1,14)

0.035 (0,89)

0.035 (0,89)

0.010 (0,25)

12

1314151618 17

11

10

8

9

7

5

432

0.020 (0,51)

0.010 (0,25)

6

12826 27

19

21

B SQ

A SQ

22

23

24

25

20

0.055 (1,40)

0.045 (1,14)

0.028 (0,71)

0.022 (0,54)

0.050 (1,27)

NOTES: A. All linear dimensions are in inches (millimeters).

B. This drawing is subject to change without notice.
C. This package can be hermetically sealed with a metal lid.
D. The terminals are gold plated.

E. Falls within JEDEC MS-004

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

72

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MECHANICAL INFORMATION

JG (R-GDIP-T8) CERAMIC DUAL-IN-LINE PACKAGE

0.310 (7,87)

0.290 (7,37)

0.014 (0,36)

0.008 (0,20)

Seating Plane

4040107/C 08/96

5

4

0.065 (1,65)

0.045 (1,14)

8

1

0.020 (0,51) MIN

0.400 (10,20)

0.355 (9,00)

0.015 (0,38)

0.023 (0,58)

0.063 (1,60)

0.015 (0,38)

0.200 (5,08) MAX

0.130 (3,30) MIN

0.245 (6,22)

0.280 (7,11)

0.100 (2,54)

0°–15°

NOTES: A. All linear dimensions are in inches (millimeters).

B. This drawing is subject to change without notice.
C. This package can be hermetically sealed with a ceramic lid using glass frit.
D. Index point is provided on cap for terminal identification only on press ceramic glass frit seal only.

E. Falls within MIL-STD-1835 GDIP1-T8

TLC271, TLC271A, TLC271B

LinCMOS PROGRAMMABLE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS090C – NOVEMBER 1987 – REVISED AUGUST 1997

73

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MECHANICAL INFORMATION

P (R-PDIP-T8) PLASTIC DUAL-IN-LINE PACKAGE

4040082/B 03/95

0.310 (7,87)

0.290 (7,37)

0.010 (0,25) NOM

0.400 (10,60)

0.355 (9,02)

58

41

0.020 (0,51) MIN

0.070 (1,78) MAX

0.240 (6,10)

0.260 (6,60)

0.200 (5,08) MAX

0.125 (3,18) MIN

0.015 (0,38)

0.021 (0,53)

Seating Plane

M

0.010 (0,25)

0.100 (2,54)

0°–15°

NOTES: A. All linear dimensions are in inches (millimeters).

B. This drawing is subject to change without notice.

C. Falls within JEDEC MS-001

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