TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Wide Range of Supply Voltages
1.4 V to 16 V
D
True Single-Supply Operation
D
Common-Mode Input Voltage Range
Includes the Negative Rail
D
Low Noise...30 nV/√Hz Typ at 1 kHz
(High Bias)
D
ESD Protection Exceeds 2000 V Per
MIL-STD-833C, Method 3015.1
description
The TLC251C, TLC251AC, and TLC251BC are
low-cost, low-power programmable operational
amplifiers designed to operate with single or dual
supplies. Unlike traditional metal-gate CMOS
operational amplifiers, these devices utilize T exas
Instruments silicon-gate LinCMOS process,
giving them stable input offset voltages without
sacrificing the advantages of metal-gate CMOS.
This series of parts is available in selected grades of input offset voltage and can be nulled with one external
potentiometer. Because the input common-mode range extends to the negative rail and the power consumption
is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A
bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the
application. The series features operation down to a 1.4-V supply and is stable at unity gain.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised
in handling these devices as exposure to ESD may result in a degradation of the device parametric
performance.
Because of the extremely high input impedance and low input bias and offset currents, applications for the
TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any
circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective
use of these devices. Many features associated with bipolar technology are available with LinCMOS
operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible
equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series.
In addition, by driving the bias-select input with a logic signal from a microprocessor, these operational amplifiers
can have software-controlled performance and power consumption. The TLC251C series is well suited to solve
the difficult problems associated with single battery and solar cell-powered applications.
The TLC251C series is characterized for operation from 0°C to 70°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
VIOmax
AT 25°C
SMALL OUTLINE
(D)
PLASTIC DIP
(P)
CHIP FORM
(Y)
10 mV TLC251CD TLC251CP TLC251Y
0°C to 70°C
5 mV TLC251ACD TLC251ACP —
2 mV TLC251BCD TLC251BCP —
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are
tested at 25°C.
Copyright 1994, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
LinCMOS is a trademark of Texas Instruments Incorporated.
1
2
3
4
8
7
6
5
OFFSET N1
IN–
IN+
V
DD–
/GND
BIAS SELECT
V
DD
OUT
OFFSET N2
D OR P PACKAGE
(TOP VIEW)
symbol
+
–
OUT
BIAS SELECT
IN+
IN–
OFFSET N1
OFFSET N2
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
schematic
Current
Control
ESD-
Protective
Network
ESD-
Protective
Network
ESD-
Protective
Network
V
DD
IN+
IN–
OFFSET
N1
OFFSET
N2
V
DD–
/GND
OUT
BIAS
SELECT
7
3
2
1
5
4
6
8
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251Y chip information
These chips, properly assembled, display characteristics similar to the TLC251C. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
T
JMAX
= 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
–
OUT
BIAS SELECT
IN+
IN–
OFFSET N1
OFFSET N2
V
DD
V
DD–
/GND
(7)
(6)
(8)
(3)
(2)
(1)
(5)
(4)
48
55
(2) (1)
(8) (7)
(6)(5)(3)
(4)
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2) ±18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input) –0.3 V to 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short circuit at (or below) 25°C free-air temperature (see Note 3) unlimited. . . . . . . . . . . . . . . . . .
Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to V
DD–
/GND.
2. Differential voltages are at IN+ with respect to IN–.
3. The output may be shorted to either supply. T emperature and/or supply voltages must be limited to ensure the maximum dissipation
rating is not exceeded.
DISSIPATION RA TING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
D 725 mW 5.8 mW/°C 464 mW
P 1000 mW 8.0 mW/°C 640 mW
recommended operating conditions
MIN MAX UNIT
Supply voltage, V
DD
1.4 16 V
VDD = 1.4 V 0 0.2
p
VDD = 5 V –0.2 4
Common-mode input voltage, V
IC
VDD = 10 V –0.2 9
V
VDD = 16 V –0.2 14
Operating free-air temperature, T
A
0 70 °C
Bias-select voltage
See Application
Information
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature
TLC251C, TLC251AC, TLC251BC
PARAMETER
TEST
T
A
†
VDD = 5 V VDD = 10 V
UNIT
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
25°C 1.1 10 1.1 10
TLC251C
Full range 12 12
p
V
O
= 1.4 V,
V
= 0 V,
25°C 0.9 5 0.9 5
VIOInput offset voltage
TLC251AC
IC
,
RS = 50 Ω,
Full range 6.5 6.5
mV
RL = 10 kΩ
25°C 0.34 2 0.39 2
TLC251BC
Full range 3 3
α
VIO
Average temperature coefficient of
input offset voltage
25°C to
70°C
1.8 2 µV/°C
p
V
= V
/2,
25°C 0.1 0.1
p
IIOInput offset current (see Note 4)
ODD
,
VIC = VDD/2
70°C 7 300 7 300
pA
p
V
= V
/2,
25°C 0.6 0.7
p
IIBInput bias current (see Note 4)
ODD
,
VIC = VDD/2
70°C 40 600 50 600
pA
Common-mode input voltage
25°C
–0.2
to
4
–0.3
to
4.2
–0.2
to
9
–0.3
to
9.2
V
V
ICR
g
range (see Note 5)
Full range
–0.2
to
3.5
–0.2
to
8.5
V
25°C 3.2 3.8 8 8.5
V
OH
High-level output voltage
VID = 100 mV ,
0°C 3 3.8 7.8 8.5
V
R
L
= 10
kΩ
70°C 3 3.8 7.8 8.4
25°C 0 50 0 50
V
OL
Low-level output voltage
VID = –100 mV,
0°C 0 50 0 50
mV
I
OL
=
0
70°C 0 50 0 50
25°C 5 23 10 36
A
VD
Large-signal differential voltagepRL = 10 kΩ,
0°C 4 27 7.5 42
V/mV
am lification
See Note 6
70°C 4 20 7.5 32
25°C 65 80 65 85
CMRR Common-mode rejection ratio VIC = V
ICR
min
0°C 60 84 60 88
dB
70°C 60 85 60 88
25°C 65 95 65 95
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V,
0°C 60 94 60 94
dB
(∆VDD/∆VIO)
V
O
= 1.4
V
70°C 60 96 60 96
I
I(SEL)
Input current (BIAS SELECT) V
I(SEL)
= 0 25°C –1.4 –1.9 µA
V
= V
/2
,
25°C 675 1600 950 2000
I
DD
Supply current
V
O
VDD/2,
VIC = VDD/2,
0°C 775 1800 1125 2200
µA
No load
70°C 575 1300 750 1700
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically .
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
operating characteristics, V
DD
= 5 V
PARAMETER TEST CONDITIONS T
TLC251C, TLC251AC,
TLC251BC
UNIT
A
MIN TYP MAX
25°C 3.6
V
I(PP)
= 1 V
0°C 4
p
()
70°C 3
SR
Slew rate at unity gain
R
L
= 10 kΩ,
C
L
= 20
pF
25°C 2.9
V/µs
V
I(PP)
= 2.5 V
0°C 3.1
()
70°C 2.5
V
n
Equivalent input noise voltage f = 1 kHz, RS = 20 Ω 25°C 25 nV/√Hz
25°C 320
B
OM
Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 10 kΩ
0°C
340
kHz
70°C 260
25°C 1.7
B
1
Unity-gain bandwidth VI = 10 mV, CL = 20 pF
0°C
2
MHz
70°C 1.3
25°C 46°
φ
m
Phase margin VI = 10 mV, f = B1,C
L
= 20 pF
0°C
47°
70°C 44°
operating characteristics, VDD = 10 V
PARAMETER TEST CONDITIONS T
TLC251C, TLC251AC,
TLC251BC
UNIT
A
MIN TYP MAX
25°C 5.3
V
I(PP)
= 1 V
0°C 5.9
p
()
70°C 4.3
SR
Slew rate at unity gain
R
L
= 10 kΩ,
C
L
= 20
pF
25°C 4.6
V/µs
V
I(PP)
= 5.5 V
0°C 5.1
()
70°C 3.8
V
n
Equivalent input noise voltage f = 1 kHz, RS = 20 Ω 25°C 25 nV/√Hz
25°C 200
B
OM
Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 10 kΩ
0°C
220
kHz
70°C 140
25°C 2.2
B
1
Unity-gain bandwidth VI = 10 mV, CL = 20 pF
0°C
2.5
MHz
70°C 1.8
25°C 49°
φ
m
Phase margin VI = 10 mV, f = B1,C
L
= 20 pF
0°C
50°
70°C 46°
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature
TLC251C, TLC251AC, TLC251BC
PARAMETER
TEST
T
A
†
VDD = 5 V VDD = 10 V
UNIT
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
25°C 1.1 10 1.1 10
TLC251C
Full range 12 12
p
V
O
= 1.4 V,
V
= 0 V,
25°C 0.9 5 0.9 5
VIOInput offset voltage
TLC251AC
IC
,
RS = 50 Ω,
Full range 6.5 6.5
mV
RL = 10 kΩ
25°C 0.34 2 0.39 2
TLC251BC
Full range 3 3
α
VIO
Average temperature coefficient of
input offset voltage
25°C to
70°C
1.7 2.1 µV/°C
p
V
= V
/2,
25°C 0.1 0.1
p
IIOInput offset current (see Note 4)
ODD
,
VIC = VDD/2
70°C 7 300 7 300
pA
p
V
= V
/2,
25°C 0.6 0.7
p
IIBInput bias current (see Note 4)
ODD
,
VIC = VDD/2
70°C 40 600 50 600
pA
Common-mode input voltage
25°C
–0.2
to
4
–0.3
to
4.2
–0.2
to
9
–0.3
to
9.2
V
V
ICR
g
range (see Note 5)
Full range
–0.2
to
3.5
–0.2
to
8.5
V
25°C 3.2 3.9 8 8.7
V
OH
High-level output voltage
VID = 100 mV ,
0°C 3 3.9 7.8 8.7
V
R
L
= 10
kΩ
70°C 3 4 7.8 8.7
25°C 0 50 0 50
V
OL
Low-level output voltage
VID = –100 mV,
0°C 0 50 0 50
mV
I
OL
=
0
70°C 0 50 0 50
25°C 25 170 25 275
A
VD
Large-signal differential voltagepRL = 10 kΩ,
0°C 15 200 15 320
V/mV
am lification
See Note 6
70°C 15 140 15 230
25°C 65 91 65 94
CMRR Common-mode rejection ratio VIC = V
ICR
min
0°C 60 91 60 94
dB
70°C 60 92 60 94
25°C 70 93 70 93
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V,
0°C 60 92 60 92
dB
(∆VDD/∆VIO)
V
O
= 1.4
V
70°C 60 94 60 94
I
I(SEL)
Input current (BIAS SELECT) V
I(SEL)
= VDD/2 25°C –130 –160 nA
V
= V
/2
,
25°C 105 280 143 300
I
DD
Supply current
V
O
VDD/2,
VIC = VDD/2,
0°C 125 320 173 400
µA
No load
70°C 85 220 110 280
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MEDIUM-BIAS MODE
operating characteristics, V
DD
= 5 V
PARAMETER TEST CONDITIONS T
TLC251C, TLC251AC,
TLC251BC
UNIT
A
MIN TYP MAX
25°C 0.43
V
I(PP)
= 1 V
0°C 0.46
p
()
70°C 0.36
SR
Slew rate at unity gain
R
L
=
100 kΩ
,
C
L
= 20
pF
25°C 0.40
V/µs
V
I(PP)
= 2.5 V
0°C 0.43
()
70°C 0.34
V
n
Equivalent input noise voltage f = 1 kHz, RS = 20 Ω 25°C 32 nV/√Hz
25°C 55
B
OM
Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 100 kΩ
0°C
60
kHz
70°C 50
25°C 525
B
1
Unity-gain bandwidth VI = 10 mV, CL = 20 pF
0°C
600
kHz
70°C 400
25°C 40°
φ
m
Phase margin VI = 10 mV, f = B1,C
L
= 20 pF
0°C
41°
70°C 39°
operating characteristics, VDD = 10 V
PARAMETER TEST CONDITIONS T
TLC251C, TLC251AC,
TLC251BC
UNIT
A
MIN TYP MAX
25°C 0.62
V
I(PP)
= 1 V
0°C 0.67
p
()
70°C 0.51
SR
Slew rate at unity gain
R
L
=
100 kΩ
,
C
L
= 20
pF
25°C 0.56
V/µs
V
I(PP)
= 5.5 V
0°C 0.61
()
70°C 0.46
V
n
Equivalent input noise voltage f = 1 kHz, RS = 20 Ω 25°C 32 nV/√Hz
25°C 35
B
OM
Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 100 kΩ
0°C
40
kHz
70°C 30
25°C 635
B
1
Unity-gain bandwidth VI = 10 mV, CL = 20 pF
0°C
710
kHz
70°C 510
25°C 43°
φ
m
Phase margin VI = 10 mV, f = B1,C
L
= 20 pF
0°C
44°
70°C 42°
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
LOW-BIAS MODE
electrical characteristics at specified free-air temperature
TLC251C, TLC251AC, TLC251BC
PARAMETER
TEST
T
A
†
VDD = 5 V VDD = 10 V
UNIT
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
25°C 1.1 10 1.1 10
TLC251C
Full range 12 12
p
V
O
= 1.4 V,
V
= 0 V,
25°C 0.9 5 0.9 5
VIOInput offset voltage
TLC251AC
IC
,
RS = 50 Ω,
Full range 6.5 6.5
mV
RL = 10 MΩ
25°C 0.24 2 0.26 2
TLC251BC
Full range 3 3
α
VIO
Average temperature coefficient of
input offset voltage
25°C to
70°C
1.1 1 µV/°C
p
V
= V
/2,
25°C 0.1 0.1
p
IIOInput offset current (see Note 4)
ODD
,
VIC = VDD/2
70°C 7 300 7 300
pA
p
V
= V
/2,
25°C 0.6 0.7
p
IIBInput bias current (see Note 4)
ODD
,
VIC = VDD/2
70°C 40 600 50 600
pA
Common-mode input voltage
25°C
–0.2
to
4
–0.3
to
4.2
–0.2
to
9
–0.3
to
9.2
V
V
ICR
g
range (see Note 5)
Full range
–0.2
to
3.5
–0.2
to
8.5
V
25°C 3.2 4.1 8 8.9
V
OH
High-level output voltage
VID = 100 mV ,
0°C 3 4.1 7.8 8.9
V
R
L
= 1
MΩ
70°C 3 4.2 7.8 8.9
25°C 0 50 0 50
V
OL
Low-level output voltage
VID = –100 mV,
0°C 0 50 0 50
mV
I
OL
=
0
70°C 0 50 0 50
25°C 50 520 50 870
A
VD
Large-signal differential voltagepRL = 1 MΩ,
0°C 50 700 50 1030
V/mV
am lification
See Note 6
70°C 50 380 50 660
25°C 65 94 65 97
CMRR Common-mode rejection ratio VIC = V
ICR
min
0°C 60 95 60 97
dB
70°C 60 95 60 97
25°C 70 97 70 97
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V,
0°C 60 97 60 97
dB
(∆VDD/∆VIO)
V
O
= 1.4
V
70°C 60 98 60 98
I
I(SEL)
Input current (BIAS SELECT) V
I(SEL)
= V
DD
25°C 65 95 nA
V
= V
/2
,
25°C 10 17 14 23
I
DD
Supply current
V
O
VDD/2,
VIC = VDD/2,
0°C 12 21 18 33
µA
No load
70°C 8 14 11 20
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
LOW-BIAS MODE
operating characteristics, V
DD
= 5 V
PARAMETER TEST CONDITIONS T
TLC251C, TLC251AC,
TLC251BC
UNIT
A
MIN TYP MAX
25°C 0.03
V
I(PP)
= 1 V
0°C 0.04
p
()
70°C 0.03
SR
Slew rate at unity gain
R
L
= 1 MΩ,
C
L
= 20
pF
25°C 0.03
V/µs
V
I(PP)
= 2.5 V
0°C 0.03
()
70°C 0.02
V
n
Equivalent input noise voltage f = 1 kHz, RS = 20 Ω 25°C 68 nV/√Hz
25°C 5
B
OM
Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 1 MΩ
0°C
6
kHz
70°C 4.5
25°C 85
B
1
Unity-gain bandwidth VI = 10 mV, CL = 20 pF
0°C
100
kHz
70°C 65
25°C 34°
φ
m
Phase margin VI = 10 mV, f = B1,C
L
= 20 pF
0°C
36°
70°C 30°
operating characteristics, VDD = 10 V
PARAMETER TEST CONDITIONS T
TLC251C, TLC251AC,
TLC251BC
UNIT
A
MIN TYP MAX
25°C 0.05
V
I(PP)
= 1 V
0°C 0.05
p
()
70°C 0.04
SR
Slew rate at unity gain
R
L
= 1 MΩ,
C
L
= 20
pF
25°C 0.04
V/µs
V
I(PP)
= 5.5 V
0°C 0.05
()
70°C 0.04
V
n
Equivalent input noise voltage f = 1 kHz, RS = 20 Ω 25°C 68 nV/√Hz
25°C 1
B
OM
Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 1 MΩ
0°C
1.3
kHz
70°C 0.9
25°C 110
B
1
Unity-gain bandwidth VI = 10 mV, CL = 20 pF
0°C
125
kHz
70°C 90
25°C 38°
φ
m
Phase margin VI = 10 mV, f = B1,C
L
= 20 pF
0°C
40°
70°C 34°
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 1.4 V
PARAMETER
TEST CONDITIONS
†
T
A
‡
BIAS
TLC251C, TLC251AC,
TLC251BC
UNIT
A
MIN TYP MAX
25°C
10
TLC251C
Full range
An
y
12
Input offset
25°C
5
V
IO
voltage
TLC251AC
V
O
= 0.2 V,
R
S
= 50
Ω
Full range
An
y
6.5
mV
25°C
2
TLC251BC
Full range
An
y
3
α
VIO
Average temperature
coefficient of input offset
voltage
25°C to 70°C Any 1 µV/°C
p
25°C
1
p
IIOInput offset current
V
O
= 0.2
V
Full range
An
y
300
pA
p
25°C
1
p
IIBInput bias current
V
O
= 0.2
V
Full range
An
y
600
pA
V
ICR
Common-mode input
voltage range
25°C Any
0
to
0.2
V
V
OM
Peak output voltage
swing
§
VID = 100 mV 25°C Any 450 700 mV
Large-signal differential
°
Low 20
A
VD
gg
voltage amplification
V
O
=
100 to 300 mV
,
R
S
= 50
Ω
25°C
High 10
CMRR
Common-mode rejection
ratio
RS = 50 Ω,
VIC = V
ICR
min
VO = 0.2 V,
25°C Any 60 77 dB
pp
°
Low 5 17
IDDSupply current
V
O
= 0.2 V,
No load
25°C
High 150 190
µ
A
†
All characteristics are measured under open-loop conditions with zero common-mode input voltage unless otherwise specified. Unless otherwise
noted, an output load resistor is connected from the output to ground and has the following values: for low bias, RL = 1 MΩ, for medium bias,
RL = 100 kΩ, and for high bias, RL = 10 kΩ.
‡
Full range is 0°C to 70°C.
§
The output swings to the potential of V
DD–
/GND.
operating characteristics, VDD = 1.4 V, TA = 25°C
PARAMETER TEST CONDITIONS BIAS
TLC251C, TLC251AC,
TLC251BC
UNIT
MIN TYP MAX
p
Low 12
B1Unity-gain bandwidth
C
L
=
100 pF
High 12
kH
z
Low 0.001
SR
Slew rate at unity gain
See Figure 1
High 0.1
V/µs
Low 35%
Overshoot factor
See Figure 1
High 30%
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics, VDD = 5 V, TA = 25°C
TLC251Y
PARAMETER TEST CONDITIONS
HIGH-BIAS
MODE
MEDIUM-BIAS
MODE
LOW-BIAS
MODE
UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX
V
IO
Input offset voltage
VO = 1.4 V,
VIC = 0 V,
RS = 50 Ω,
R
L
†
1.1 10 1.1 10 1.1 10 mV
α
VIO
Average temperature
coefficient of input
offset voltage
1.8 1.7 1.1 µV/°C
I
IO
Input offset current
(see Note 4)
VO = VDD/2,
VIC = VDD/2
0.1 0.1 0.1 pA
I
IB
Input bias current
(see Note 4)
VO = VDD/2,
VIC = VDD/2
0.6 0.6 0.6 pA
V
ICR
Common-mode input
voltage range
(see Note 5)
–0.2
to
4
–0.3
to
4.2
–0.2
to
4
–0.3
to
4.2
–0.2
to
4
–0.3
to
4.2
V
V
OH
High-level output
voltage
VID = 100 mV ,
R
L
†
3.2 3.8 3.2 3.9 3.2 4.1 V
V
OL
Low-level output
voltage
VID = –100 mV,
IOL = 0
0 50 0 50 0 50 mV
A
VD
Large-signal
differential voltage
amplification
VO = 0.25 V ,
R
L
†
5 23 25 170 50 480 V/mV
CMRR
Common-mode
rejection ratio
VIC = V
ICR
min 65 80 65 91 65 94 dB
k
SVR
Supply-voltage
rejection ratio
(∆VDD/∆VIO)
VDD = 5 V to 10 V,
VO = 1.4 V
65 95 70 93 70 97 dB
I
I(SEL)
Input current
(BIAS SELECT)
V
I(SEL)
= VDD/2 –1.4 –0.13 0.065 µA
I
DD
Supply current
VO = VDD/2,
VIC = VDD/2,
No load
675 1600 105 280 10 17 µA
†
For high-bias mode, RL = 10 kΩ; for medium-bias mode, RL = 100 kΩ; and for low-bias mode, RL = 1 MΩ.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics, VDD = 5 V, TA = 25°C
TLC251Y
PARAMETER TEST CONDITIONS
HIGH-BIAS
MODE
MEDIUM-BIAS
MODE
LOW-BIAS
MODE
UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Slew rate at
R†,
V
I(PP)
= 1 V 3.6 0.43 0.03
SR
unity gain
L
,
CL = 20 pF
V
I(PP)
= 2.5 V 2.9 0.40 0.03
V/µs
V
n
Equivalent input
noise voltage
f = 1 kHz, RS = 20 Ω 25 32 68 nV/√Hz
B
OM
Maximum output
swing bandwidth
VO = VOH,
RL = 10 kΩ
CL = 20 pF,
320 55 4.5 kHz
B
1
Unity-gain
bandwidth
VI = 10 mV, CL = 20 pF 1700 525 65 kHz
φ
m
Phase margin
f = B1,
CL = 20 pF
VI = 10 mV,
46° 40° 34°
†
For high-bias mode, RL = 10 kΩ; for medium-bias mode, RL = 100 kΩ; and for low-bias mode, RL = 1 MΩ.
PARAMETER MEASUREMENT INFORMATION
Figure 1. Unity-Gain Amplifier
–
+
Output
Input
CL = 100 pF
R
L
BIAS R
L
Low
1
MΩ
Medium
100 kΩ
High
10
kΩ
Figure 2. Input Offset Voltage Null Circuit
–
+
25 kΩ
N1
N2
IN–
IN+
Output
GND
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
pp
vs Bias-select voltage
pp
3
IDDSupply current
vs Supply voltage
vs Free-air temperature
4
5
Low bias vs Frequency 6
A
VD
Large-signal differential voltage amplification
Medium bias
vs Frequency 7
High bias vs Frequency 8
Low bias vs Frequency 6
Phase shift
Medium bias vs Frequency 7
High bias vs Frequency 8
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 3
100
10
1
0.1 1
– Supply Current –
1000
SUPPLY CURRENT
vs
BIAS-SELECT VOLTAGE
10000
10 100
I
DD
Aµ
VDD = 16 V
VDD = 4 V
VDD = 1.4 V
VB – Bias-Select Voltage – V
VO = VIC = 0.2 V
DD
No Load
TA = 25°C
Figure 4
10
0
024681012
100
1000
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
10000
14 16 18 20
– Supply Current –I
DD
Aµ
VDD – Supply Voltage – V
Medium-Bias Versions
Low-Bias Versions
VO = VIC = 0.2 V
DD
No Load
TA = 25°C
High-Bias Versions
10
0
0102030405060
100
1000
10000
70 80
– Supply Current –I
DD
Aµ
TA – Free-Air Temperature – °C
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
VDD = 10 V
VIC = 0 V
VO = 2 V
No Load
Medium-Bias Versions
Low-Bias Versions
High-Bias Versions
Figure 5
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0.1 1 10 100 1 k 10 k 100 k
LOW-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
Frequency – Hz
10
7
10
6
10
5
10
4
10
3
10
2
10
1
1
0.1
Phase Shift
(right scale)
AVD (left scale)
VDD = 10 V
RL = 1 MΩ
TA = 25°C
Phase Shift
0°
30°
60°
90°
120°
150°
180°
– Differential Voltage AmplificationA
VD
Figure 6
1 10 100 1 k 10 k 100 k 1 M
MEDIUM-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
– Differential Voltage AmplificationA
VD
Frequency – Hz
10
7
10
6
10
5
10
4
10
3
10
2
10
1
1
0.1
Phase Shift
(right scale)
AVD (left scale)
VDD = 10 V
RL = 100 kΩ
TA = 25°C
Phase Shift
0°
30°
60°
90°
120°
150°
180°
Figure 7
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
10 100 1 k 10 k 100 k 1 M 10 M
– Differential Voltage AmplificationA
VD
Phase Shift
HIGH-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
Frequency – Hz
10
7
10
6
10
5
10
4
10
3
10
2
10
1
1
0.1
Phase Shift (right scale)
AVD (left scale)
VDD = 10 V
RL = 10 kΩ
TA = 25°C
0°
30°
60°
90°
120°
150°
180°
Figure 8
APPLICATION INFORMATION
latch-up avoidance
Junction-isolated CMOS circuits have an inherent parasitic PNPN structure that can function as an SCR. Under
certain conditions, this SCR may be triggered into a low-impedance state, resulting in excessive supply current.
To avoid such conditions, no voltage greater than 0.3 V beyond the supply rails should be applied to any pin.
In general, the operational amplifier supplies should be applied simultaneously with, or before, application of
any input signals.
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
using BIAS SELECT
The TLC251 has a terminal called BIAS SELECT that allows the selection of one of three IDD conditions (10,
150, and 1000 µA typical). This allows the user to trade-off power and ac performance. As shown in the typical
supply current (I
DD
) versus supply voltage (VDD) curves (Figure 4), the IDD varies only slightly from 4 V to 16
V . Below 4 V, the I
DD
varies more significantly . Note that the IDD values in the medium- and low-bias modes at
V
DD
= 1.4 V are typically 2 µA, and in the high mode are typically 12 µA. The following table shows the
recommended BIAS SELECT connections at V
DD
= 10 V.
BIAS MODE AC PERFORMANCE
BIAS SELECT
CONNECTION
†
TYPICAL I
DD
‡
Low
Medium
High
Low
Medium
High
V
DD
0.8 V to 9.2 V
Ground pin
10 µA
150 µA
1000 µA
†
Bias selection may also be controlled by external circuitry to conserve power, etc.
For information regarding BIAS SELECT, see Figure 3 in the typical
characteristics curves.
‡
For IDD characteristics at voltages other than 10 V, see Figure 4 in the typical
characteristics curves.
output stage considerations
The amplifier’s output stage consists of a source-follower-connected pullup transistor and an open-drain
pulldown transistor. The high-level output voltage (V
OH
) is virtually independent of the IDD selection and
increases with higher values of V
DD
and reduced output loading. The low-level output voltage (VOL) decreases
with reduced output current and higher input common-mode voltage. With no load, V
OL
is essentially equal to
the potential of V
DD–
/GND.
input offset nulling
The TLC251C series offers external offset null control. Nulling may be achieved by adjusting a 25-kΩ
potentiometer connected between the offset null terminals with the wiper connected to the device V
DD–
/GND
pin as shown in Figure 2. The amount of nulling range varies with the bias selection. At an I
DD
setting of
1000 µA (high bias), the nulling range allows the maximum offset specified to be trimmed to zero. In low or
medium bias or when the amplifier is used below 4 V, total nulling may not be possible for all units.
supply configurations
Even though the TLC251C series is characterized for single-supply operation, it can be used effectively in a
split-supply configuration when the input common-mode voltage (V
ICR
), output swing (VOL and VOH), and
supply voltage limits are not exceeded.
circuit layout precautions
The user is cautioned that whenever extremely high circuit impedances are used, care must be exercised in
layout, construction, board cleanliness, and supply filtering to avoid hum and noise pickup, as well as excessive
dc leakages.
IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICA TIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
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Copyright 1998, Texas Instruments Incorporated
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