Texas Instruments TLC251CD, TLC251CDR, TLC251BCP, TLC251ACP, TLC251ACDR Datasheet
...
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Wide Range of Supply Voltages
1.4 V to 16 V
D
True Single-Supply Operation
D
Common-Mode Input Voltage Range
Includes the Negative Rail
D
Low Noise...30 nV/√Hz Typ at 1 kHz
(High Bias)
D
ESD Protection Exceeds 2000 V Per
MIL-STD-833C, Method 3015.1
description
The TLC251C, TLC251AC, and TLC251BC are
low-cost, low-power programmable operational
amplifiers designed to operate with single or dual
supplies. Unlike traditional metal-gate CMOS
operational amplifiers, these devices utilize T exas
Instruments silicon-gate LinCMOS process,
giving them stable input offset voltages without
sacrificing the advantages of metal-gate CMOS.
This series of parts is available in selected grades of input offset voltage and can be nulled with one external
potentiometer. Because the input common-mode range extends to the negative rail and the power consumption
is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A
bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the
application. The series features operation down to a 1.4-V supply and is stable at unity gain.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised
in handling these devices as exposure to ESD may result in a degradation of the device parametric
performance.
Because of the extremely high input impedance and low input bias and offset currents, applications for the
TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any
circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective
use of these devices. Many features associated with bipolar technology are available with LinCMOS
operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible
equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series.
In addition, by driving the bias-select input with a logic signal from a microprocessor, these operational amplifiers
can have software-controlled performance and power consumption. The TLC251C series is well suited to solve
the difficult problems associated with single battery and solar cell-powered applications.
The TLC251C series is characterized for operation from 0°C to 70°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
VIOmax
AT 25°C
SMALL OUTLINE
(D)
PLASTIC DIP
(P)
CHIP FORM
(Y)
10 mV TLC251CD TLC251CP TLC251Y
0°C to 70°C
5 mV TLC251ACD TLC251ACP —
2 mV TLC251BCD TLC251BCP —
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are
tested at 25°C.
Copyright 1994, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
LinCMOS is a trademark of Texas Instruments Incorporated.
1
2
3
4
8
7
6
5
OFFSET N1
IN–
IN+
V
DD–
/GND
BIAS SELECT
V
DD
OUT
OFFSET N2
D OR P PACKAGE
(TOP VIEW)
symbol
+
–
OUT
BIAS SELECT
IN+
IN–
OFFSET N1
OFFSET N2
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
schematic
Current
Control
ESD-
Protective
Network
ESD-
Protective
Network
ESD-
Protective
Network
V
DD
IN+
IN–
OFFSET
N1
OFFSET
N2
V
DD–
/GND
OUT
BIAS
SELECT
7
3
2
1
5
4
6
8
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251Y chip information
These chips, properly assembled, display characteristics similar to the TLC251C. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
T
JMAX
= 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
–
OUT
BIAS SELECT
IN+
IN–
OFFSET N1
OFFSET N2
V
DD
V
DD–
/GND
(7)
(6)
(8)
(3)
(2)
(1)
(5)
(4)
48
55
(2) (1)
(8) (7)
(6)(5)(3)
(4)
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2) ±18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input) –0.3 V to 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short circuit at (or below) 25°C free-air temperature (see Note 3) unlimited. . . . . . . . . . . . . . . . . .
Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to V
DD–
/GND.
2. Differential voltages are at IN+ with respect to IN–.
3. The output may be shorted to either supply. T emperature and/or supply voltages must be limited to ensure the maximum dissipation
rating is not exceeded.
DISSIPATION RA TING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
D 725 mW 5.8 mW/°C 464 mW
P 1000 mW 8.0 mW/°C 640 mW
recommended operating conditions
MIN MAX UNIT
Supply voltage, V
DD
1.4 16 V
VDD = 1.4 V 0 0.2
p
VDD = 5 V –0.2 4
Common-mode input voltage, V
IC
VDD = 10 V –0.2 9
V
VDD = 16 V –0.2 14
Operating free-air temperature, T
A
0 70 °C
Bias-select voltage
See Application
Information
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature
TLC251C, TLC251AC, TLC251BC
PARAMETER
TEST
T
A
†
VDD = 5 V VDD = 10 V
UNIT
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
25°C 1.1 10 1.1 10
TLC251C
Full range 12 12
p
V
O
= 1.4 V,
V
= 0 V,
25°C 0.9 5 0.9 5
VIOInput offset voltage
TLC251AC
IC
,
RS = 50 Ω,
Full range 6.5 6.5
mV
RL = 10 kΩ
25°C 0.34 2 0.39 2
TLC251BC
Full range 3 3
α
VIO
Average temperature coefficient of
input offset voltage
25°C to
70°C
1.8 2 µV/°C
p
V
= V
/2,
25°C 0.1 0.1
p
IIOInput offset current (see Note 4)
ODD
,
VIC = VDD/2
70°C 7 300 7 300
pA
p
V
= V
/2,
25°C 0.6 0.7
p
IIBInput bias current (see Note 4)
ODD
,
VIC = VDD/2
70°C 40 600 50 600
pA
Common-mode input voltage
25°C
–0.2
to
4
–0.3
to
4.2
–0.2
to
9
–0.3
to
9.2
V
V
ICR
g
range (see Note 5)
Full range
–0.2
to
3.5
–0.2
to
8.5
V
25°C 3.2 3.8 8 8.5
V
OH
High-level output voltage
VID = 100 mV ,
0°C 3 3.8 7.8 8.5
V
R
L
= 10
kΩ
70°C 3 3.8 7.8 8.4
25°C 0 50 0 50
V
OL
Low-level output voltage
VID = –100 mV,
0°C 0 50 0 50
mV
I
OL
=
0
70°C 0 50 0 50
25°C 5 23 10 36
A
VD
Large-signal differential voltagepRL = 10 kΩ,
0°C 4 27 7.5 42
V/mV
am lification
See Note 6
70°C 4 20 7.5 32
25°C 65 80 65 85
CMRR Common-mode rejection ratio VIC = V
ICR
min
0°C 60 84 60 88
dB
70°C 60 85 60 88
25°C 65 95 65 95
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V,
0°C 60 94 60 94
dB
(∆VDD/∆VIO)
V
O
= 1.4
V
70°C 60 96 60 96
I
I(SEL)
Input current (BIAS SELECT) V
I(SEL)
= 0 25°C –1.4 –1.9 µA
V
= V
/2
,
25°C 675 1600 950 2000
I
DD
Supply current
V
O
VDD/2,
VIC = VDD/2,
0°C 775 1800 1125 2200
µA
No load
70°C 575 1300 750 1700
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically .
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E – JULY 1983 – REVISED AUGUST 1994
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
operating characteristics, V
DD
= 5 V
PARAMETER TEST CONDITIONS T
TLC251C, TLC251AC,
TLC251BC
UNIT
A
MIN TYP MAX
25°C 3.6
V
I(PP)
= 1 V
0°C 4
p
()
70°C 3
SR
Slew rate at unity gain
R
L
= 10 kΩ,
C
L
= 20
pF
25°C 2.9
V/µs
V
I(PP)
= 2.5 V
0°C 3.1
()
70°C 2.5
V
n
Equivalent input noise voltage f = 1 kHz, RS = 20 Ω 25°C 25 nV/√Hz
25°C 320
B
OM
Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 10 kΩ
0°C
340
kHz
70°C 260
25°C 1.7
B
1
Unity-gain bandwidth VI = 10 mV, CL = 20 pF
0°C
2
MHz
70°C 1.3
25°C 46°
φ
m
Phase margin VI = 10 mV, f = B1,C
L
= 20 pF
0°C
47°
70°C 44°
operating characteristics, VDD = 10 V
PARAMETER TEST CONDITIONS T
TLC251C, TLC251AC,
TLC251BC
UNIT
A
MIN TYP MAX
25°C 5.3
V
I(PP)
= 1 V
0°C 5.9
p
()
70°C 4.3
SR
Slew rate at unity gain
R
L
= 10 kΩ,
C
L
= 20
pF
25°C 4.6
V/µs
V
I(PP)
= 5.5 V
0°C 5.1
()
70°C 3.8
V
n
Equivalent input noise voltage f = 1 kHz, RS = 20 Ω 25°C 25 nV/√Hz
25°C 200
B
OM
Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 10 kΩ
0°C
220
kHz
70°C 140
25°C 2.2
B
1
Unity-gain bandwidth VI = 10 mV, CL = 20 pF
0°C
2.5
MHz
70°C 1.8
25°C 49°
φ
m
Phase margin VI = 10 mV, f = B1,C
L
= 20 pF
0°C
50°
70°C 46°
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