Direct Upgrades to TL07x and TL08x BiFET
Operational Amplifiers
D
Faster Slew Rate (20 V/µs Typ) Without
Increased Power Consumption
description
The TL05x series of JFET-input operational amplifiers of fers improved dc and ac characteristics over the TL07x
and TL08x families of BiFET operational amplifiers. On-chip zener trimming of offset voltage yields precision
grades as low as 1.5 mV (TL051A) for greater accuracy in dc-coupled applications. T exas Instruments improved
BiFET process and optimized designs also yield improved bandwidth and slew rate without increased power
consumption. The TL05x devices are pin-compatible with the TL07x and TL08x and can be used to upgrade
existing circuits or for optimal performance in new designs.
BiFET operational amplifiers offer the inherently higher input impedance of the JFET -input transistors, without
sacrificing the output drive associated with bipolar amplifiers. This makes them better suited for interfacing with
high-impedance sensors or very low-level ac signals. They also feature inherently better ac response than
bipolar or CMOS devices having comparable power consumption.
The TL05x family was designed to offer higher precision and better ac response than the TL08x with the low
noise floor of the TL07x. Designers requiring significantly faster ac response or ensured lower noise should
consider the Excalibur TLE208x and TLE207x families of BiFET operational amplifiers.
TL05x, TL05xA, TL05xY
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178 – FEBRUARY 1997
D
On-Chip Offset Voltage Trimming for
Improved DC Performance and Precision
Grades Are Available (1.5 mV, TL051A)
D
Available in TSSOP for Small Form-Factor
Designs
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
0°C to 70°C
–40°C to 85°C
–55°C to 125°C
†
The D packages are available taped and reeled. Add R suffix to device type (e.g., TL054CDR).
‡
Chip forms are tested at 25°C.
VIOmax
AT 25°C
800 µV
1.5 mV
4 mVTL054CD———TL054CN—
800 µV
1.5 mV
4 mVTL054ID——TL054IN—
800 µV
1.5 mV
4 mVTL054MDTL054MFKTL054MJ—TL054MN—
SMALL
OUTLINE
(D)
TL051ACD
TL052ACD
TL051CD
TL052CD
TL054ACD
TL051AID
TL052AID
TL051ID
TL052ID
TL054AID
TL051AMD
TL052AMD
TL051MD
TL052MD
TL054AMD
†
CARRIER
TL051AMFK
TL052AMFK
TL051MFK
TL052MFK
TL054AMFK
CHIP
(FK)
————
———TL054ACN
————
———TL054AIN
CERAMIC
DIP
(J)
—
TL054AMJ
CERAMIC
DIP
(JG)
TL051AMJG
TL052AMJG
TL051MJG
TL052MJG
PLASTIC
DIP
(N)
—
TL054AMN
PLASTIC
DIP
(P)
TL051ACP
TL052ACP
TL051CP
TL052CP
TL051AIP
TL052AIP
TL051IP
TL052IP
TL051AMP
TL052AMP
TL051MP
TL052MP
FORM
(Y)
TL051Y
TL052Y
TL054Y
—
—
‡
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to
observe common-mode input voltage limits and output swing when operating from a single supply . DC biasing
of the input signal is required and loads should be terminated to a virtual-ground node at midsupply. Texas
Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from single
supplies.
The TL05x are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply systems,
Texas Instruments LinCMOS families of operational amplifiers (TLC-prefix) are recommended. When moving
from BiFET to CMOS amplifiers, particular attention should be paid to the slew rate and bandwidth
requirements, and also the output loading.
D, JG, OR P PACKAGE
TL051
(TOP VIEW)
D, JG, OR P PACKAGE
TL052
(TOP VIEW)
TL054
D, J, OR N PACKAGE
(TOP VIEW)
OFFSET N1
IN–
IN+
V
CC–
NC
IN–
NC
IN+
NC
1
2
3
4
TL051
FK PACKAGE
(TOP VIEW)
NC
OFFSET N1
NC
3 2 1 20 19
4
5
6
7
8
910111213
NC
NC
CC –
V
NC
8
V
7
CC+
OUT
6
OFFSET N2
5
NC
NC
18
17
16
15
14
NC
NC
V
CC+
NC
OUT
NC
NC
1IN –
NC
1IN+
NC
1OUT
1IN–
1IN+
V
CC –
3212019
4
5
6
7
8
NC
NC
8
7
6
5
CC +
V
2IN +
V
2OUT
2IN–
2IN+
NC
18
17
16
15
14
NC
1
2
3
4
TL052
FK PACKAGE
(TOP VIEW)
NC
1OUT
910111213
NC
CC –
V
CC+
NC
2OUT
NC
2IN –
NC
1IN+
V
CC+
2IN+
1OUT
1IN–
1IN+
V
CC+
2IN+
2IN–
2OUT
NC
NC
14
1
13
2
12
3
11
4
10
5
6
7
FK PACKAGE
3212019
4
5
6
7
8
910111213
9
8
TL054
(TOP VIEW)
1IN –
1OUT
NC
NC
2IN –
2OUT
3OUT
4OUT
4IN–
4IN+
V
CC–
3IN+
3IN–
3OUT
4IN –
4OUT
18
17
16
15
14
3IN –
4IN+
NC
V
CC–
NC
3IN+
NC – No internal connection
2
OFFSET N2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
symbol (each amplifier)
TL05x, TL05xA, TL05xY
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178 – FEBRUARY 1997
IN–
IN+
equivalent schematic (each amplifier)
Q2
Q3
IN+
IN–
JF1JF2
Q4
Q1
See Note A
OFFSET N1
OFFSET N2
R1
R2R3
Q5
–
+
Q6
Q7
D1
C1
R4
OUT
Q8
V
CC+
Q10
Q11
R5
R6
Q9
Q12
R8
Q13
R7
R9
Q14
R10D2
Q17
Q15
Q16
JF3
OUT
NOTE A: OFFSET N1 and OFFSET N2 are only available on the TL051x.
This chip, when properly assembled, displays characteristics similar to the TL051. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
V
(6)(7)
(3)
IN+
(2)
IN–
OFFSET N1
OFFSET N2
(1)
(5)
CC+
(7)
+
–
V
(6)
(4)
CC–
OUT
63
(1)
(2)
43
(5)
(3)
(4)
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TL05x, TL05xA, TL05xY
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178 – FEBRUARY 1997
TL052Y chip information
This chip, when properly assembled, displays characteristics similar to the TL052. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
V
CC+
(7)
(6)
(5)
1IN+
1IN–
2OUT
(3)
(2)
(7)
(8)
+
–
V
CC–
(4)
(1)
1OUT
(5)
+
–
(6)
2IN+
2IN–
72
(8)
(1)
66
(2)
(4)
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
This chip, when properly assembled, displays characteristics similar to the TL054C. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. These chips may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
V
+
+
V
–
–
(11)
CC–
CC+
(4)
(1)
(5)
+
(6)
–
(8)
(12)
+
(13)
–
(2)
(3)
(1)
(14)
(13)
(12)
1IN+
1IN–
2OUT
3IN+
3IN–
4OUT
(3)
(2)
(7)
(10)
(9)
(14)
1OUT
2IN+
2IN–
3OUT
4IN+
4IN–
122
(4)
(5)
(6)
(7)(8)
(6)
(7)
71
(8)
(9)
(11)
(10)
(9)
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (11) IS INTERNALLY CONNECTED
TO BACKSIDE OF THE CHIP.
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
UNIT
C
V
V
TL05x, TL05xA, TL05xY
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178 – FEBRUARY 1997
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Lead temperature 1,6 mm (1/16inch) from case for 10 seconds: D, N, or P package 260°C. . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16inch) from case for 60 seconds: J or JG package 300°C. . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between V
2. Differential voltages are at IN+ with respect to IN–.
3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less.
4. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
TL051C and TL051AC electrical characteristics at specified free-air temperature
TL051C, TL051AC
PARAMETERTEST CONDITIONS
p
= 0,
O
α
VIO
ICR
OM +
OM –
A
VD
r
i
c
i
CMRR
k
SVR
I
CC
†
Full range is 0°C to 70°C.
‡
This parameter is tested on a sample basis for the TL051A. For other test requirements, please contact the factory. This statement has no bearing
on testing or nontesting of other parameters.
§
Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to
TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
TL051C and TL051AC operating characteristics at specified free-air temperature
TL051C, TL051AC
PARAMETERTEST CONDITIONS
SR+
SR–
t
r
t
f
n
V
N(PP)
I
n
THD
B
1
φ
m
†
Full range is 0°C to 70°C.
‡
For V
CC±
§
This parameter is tested on a sample basis for the TL051A. For other test requirements, please contact the factory. This statement has no bearing
on testing or nontesting of other parameters.
¶
For V
CC±
ve slew rate
§
‡
‡
= ±1 V; for V
I(PP)
at unity gain
egative slew rate
at unity gain
Rise time
Fall time
Overshoot factor
Equivalent input noise
voltage
Peak-to-peak equivalent
input noise voltage
Equivalent input
noise current
Total harmonic distortion
Unity-gain bandwidth
Phase margin at unity
= ±5 V, V
= ±5 V, VOrms = 1 V; for V
R
= 2 kΩ,C
See Figure 1
V
= ±10 mV ,
I(PP)
RL = 2 kΩ,
See Figures 1 and 2
RS = 20 Ω,
See Figure 3
f = 1 kHz25°C0.010.01
RS = 1 kΩ,
¶
f = 1 kHz
VI = 10 mV,RL = 2 kΩ,
VI = 10 mV,RL = 2 kΩ,
CC±
CC±
p
=
p
= 25 F,
= 25 F,
p
= ±15 V, V
= ±15 V, VOrms = 6 V.
= 100 pF,
,
f = 10 Hz25°C7575
f = 1 kHz25°C181830
f = 10 Hz to
10 kHz
RL = 2 kΩ,
= ±5 V.
I(PP)
T
A
25°C161320
Full
range
25°C151318
Full
range
25°C5556
0°C5455
70°C6363
25°C5557
0°C5456
70°C6264
25°C24%19%
0°C24%19%
70°C24%19%
25°C44µV
25°C0.003%0.003%
25°C33.1
0°C3.23.3
70°C2.72.8
25°C59°62°
0°C58°62°
70°C59°62°
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
16.41122.6
161119.3
CC±
= ±15 V
UNIT
n
pA/√Hz
MHz
z
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
9
TL05x, TL05xA, TL05xY
†
A
TL051I
VIOInput offset voltage
mV
TL051AI
V
0
R
S
Ω
V/°C
IIOInput offset current
OIC
IIBInput bias current
OIC
V
V
R
kΩ
V
V
R
kΩ
R
kΩ
V
g
V
R
kΩ
L
diff
l
¶
voltage am lification
¶
,
C
V
IC
V
ICR
min,
rejection ratio
S
V
ratio (∆V
CC±
/∆VIO)
R
S
Ω
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178 – FEBRUARY 1997
TL051I and TL051AI electrical characteristics at specified free-air temperature
TL051I, TL051AI
PARAMETERTEST CONDITIONS
p
,
=
O
α
VIO
ICR
OM +
OM –
A
VD
r
i
c
i
CMRR
k
SVR
I
CC
†
Full range is –40°C to 85°C
‡
This parameter is tested on a sample basis for the TL051A. For other test requirements, please contact the factory. This statement has no bearing
on testing or nontesting of other parameters.
§
Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to
TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
TL051I and TL051AI operating characteristics at specified free-air temperature
TL051I, TL051AI
PARAMETERTEST CONDITIONS
SR+
SR–
t
r
t
f
n
V
N(PP)
I
n
THDTotal harmonic distortion
B
1
φ
m
†
Full range is –40°C to 85°C.
‡
For V
CC±
§
This parameter is tested on a sample basis for the TL051A. For other test requirements, please contact the factory. This statement has no bearing
on testing or nontesting of other parameters.
¶
For V
CC±
ve slew rate
§
‡
‡
= ±1 V; for V
I(PP)
at unity gain
egative slew rate
at unity gain
Rise time
Fall time
Overshoot factor
Equivalent input noise
voltage
Peak-to-peak equivalent
input noise voltage
Equivalent input
noise current
Unity-gain bandwidth
Phase margin at unity
= ±5 V, V
= ±5 V, VOrms = 1 V; for V
R
= 2 kΩ,C
See Figure 1
V
= ±10 mV ,
I(PP)
RL = 2 kΩ,
See Fi
RS = 20 Ω,
See Figure 3
f = 1 kHz25°C0.010.01pA/√Hz
RS = 1 kΩ,
¶
f = 1 kHz
VI = 10 mV,RL = 2 kΩ,
VI = 10 mV,RL = 2 kΩ,
CC±
CC±
p
=
ures 1 and 2
p
= 25 F,
= 25 F,
p
= ±15 V, V
= ±15 V, VOrms = 6 V.
= 100 pF,
,
f = 10 Hz25°C7575
f = 1 kHz25°C181830
f = 10 Hz to
10 kHz
RL = 2 kΩ,
= ±5 V.
I(PP)
T
A
25°C161320
Full
range
25°C151318
Full
range
25°C5556
–40°C5253
85°C6465
25°C5557
–40°C5153
85°C6465
25°C24%19%
–40°C24%19%
85°C24%19%
25°C44µV
25°C0.003%0.003%
25°C33.1
–40°C3.53.6
85°C2.62.7
25°C59°62°
–40°C58°61°
85°C59°62°
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
11
11
CC±
= ±15 V
UNIT
n
MHz
z
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
11
TL05x, TL05xA, TL05xY
†
A
TL051M
VIOInput offset voltage
mV
TL051AM
V
0
R
S
Ω
V/°C
IIOInput offset current
OIC
IIBInput bias current
OIC
V
V
R
kΩ
V
V
R
kΩ
R
kΩ
V
g
V
R
kΩ
L
diff
l
§
voltage am lification
§
,
C
V
IC
V
ICR
min,
rejection ratio
S
ratio (∆V
CC±
/∆VIO)
CCyO
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178 – FEBRUARY 1997
TL051M and TL051AM electrical characteristics at specified free-air temperature
TL051M, TL051AM
PARAMETERTEST CONDITIONS
p
,
=
O
α
A
r
i
c
CMRR
k
I
CC
†
Full range is –55°C to 125°C.
‡
Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to
TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
TL051M and TL051AM operating characteristics at specified free-air temperature
TL051M, TL051AM
V
PARAMETERTEST CONDITIONS
Positive slew rate
+
at unity gain
Negative slew rate
–
at unity gain
t
r
t
f
V
I
n
THD
B
φ
m
†
For V
‡
This parameter is tested on a sample basis for the TL051A. For other test requirements, please contact the factory. This statement has no bearing
on testing or nontesting of other parameters.
This parameter is tested on a sample basis for the TL051A. For other test requirements, please contact the factory. This statement has no bearing
on testing or nontesting of other parameters.
§
For V
Positive slew rate at unity gain
Negative slew rate at unity gain
Rise time
Fall time
Overshoot factor
n
N(PP)
1
CC±
CC±
ent input noise voltage
Peak-to-peak equivalent input
noise voltage
Equivalent input noise current f = 1 kHz0.010.01pA/√Hz
Unity-gain bandwidth
Phase margin at unity gain
= ±5 V, V
= ±5 V, VOrms = 1 V; for V
= ±1 V; for V
I(PP)
†
†
§
= ±15 V, V
CC±
= ±15 V, VOrms = 6 V.
CC±
= 25°C
A
R
= 2 kΩ,C
See Figure 1
V
= ±10 mV ,
I(PP)
RL = 2 kΩ,
=
p
=
See Figures 1 and 2
RS = 20 Ω,
See Figure 3
RS = 1 kΩ,RL = 2 kΩ,
f = 1 kHz
VI = 10 mV,RL = 2 kΩ,
CL = 25 pF,See Figure 4
VI = 10 mV,RL = 2 kΩ,
CL = 25 pF,See Figure 4
I(PP)
= 100 pF,
,
f = 10 Hz7575
f = 1 kHz1818
f = 10 Hz to
10 kHz
= ±5 V.
TL051Y
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
1620
1518
5556
5557
24%19%
44µV
0.003%0.003%
33.1MHz
59°62°
CC±
= ±15 V
UNIT
n
z
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
15
TL05x, TL05xA, TL05xY
A
TL052C
VIOInput offset voltage
mV
TL052AC
V
IC
R
S
Ω
TL052C
8
8
V/°C
TL052AC
8625
IIOInput offset current
O
,
V
0
IIBInput bias current
O
,
V
0
V
V
R
kΩ
V
V
R
kΩ
R
10 kΩ
V
g
V
R
kΩ
¶
voltage am lification
¶
C
V
V
rejection ratio
V
O
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178 – FEBRUARY 1997
TL052C and TL052AC electrical characteristics at specified free-air temperature
TL052C, TL052AC
PARAMETERTEST CONDITIONS
p
VO = 0,
= 0,
= 50 Ω
50
R
α
A
r
c
CMRR
†
‡
§
¶
Temperature coefficient
VIO
of input offset voltage
Input offset voltage longterm drift
Common-mode input
ICR
voltage range
Maximum positive peak
OM+
output voltage swing
Maximum negative peak
OM–
output voltage swing
Large-signal differential
VD
Input resistance25°C
i
Input capacitance25°C1012pF
i
Full range is 0°C to 70°C.
This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing on testing
or nontesting of other parameters.
Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to
TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
For V
CC±
§
p
p
p
ommon-mode
= ±5 V, VO = ±2.3 V; at V
‡
VO = 0,
RS = 50 Ω
V
= 0,
See Figure 5
V
= 0,
See Figure 5
= 10
L
= 2
L
=
L
= 2
L
RL = 2 kΩ
=
IC
= 0,
CC±
min,
ICR
=
= ±15 V, VO = ±10 V.
VIC = 0,25°C0.040.04µV/mo
,
=
IC
,
=
IC
RS = 50 Ω
†
T
A
25°C0.733.50.651.5
Full range4.52.5
25°C0.512.80.40.8
Full range3.81.8
25°C to
70°C
25°C to
70°C
25°C41005100pA
70°C
25°C2020030200pA
70°C
25°C
Full range
25°C34.21313.9
Full range313
25°C2.53.811.512.7
Full range2.511.5
25°C–2.5–3.5–12 –13.2
Full range–2.5–12
25°C–2.3–3.2–11–12
Full range–2.3–11
25°C255950105
0°C306560129
70°C20463085
25°C65857593
0°C
70°C65847591
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
0.0210.0251nA
0.1540.24nA
–1
–2.3
to
to
4
5.6
–1
to
4
12
10
65847592
–11
11
–11
11
to
to
CC±
= ±15 V
–12.3
to
15.6
12
10
UNIT
µ
V/mV
Ω
dB
°
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
A
ratio (∆V
CC ±
/∆VIO)
(two am lifiers)
A
SR +Slew rate at unity gain
V/µs
SR
g
ns
()
C
L
100 F
g
g
V
q
V/√H
C
L
See Figure 4
Ph
V
R
gain
C
L
See Figure 4
TL05x, TL05xA, TL05xY
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178 – FEBRUARY 1997
TL052C and TL052AC electrical characteristics at specified free-air temperature (continued)
TL052C, TL052AC
k
SVR
I
CC
VO1/V
PARAMETERTEST CONDITIONS
Supply-voltage rejection
Supply current
p
Crosstalk attenuationAVD = 10025°C120120dB
O2
VO = 0,RS = 50 Ω
VO = 0,No load
T
A
25°C75997599
0°C
70°C75977597
25°C4.65.64.85.6
0°C
70°C4.46.44.66.4
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
75987598
4.76.44.86.4
CC±
= ±15 V
TL052C and TL052AC operating characteristics at specified free-air temperature
TL052C, TL052AC
PARAMETERTEST CONDITIONS
RL = 2 kΩ,CL = 100 pF,
Negative slew rate
–
at unity gain
t
r
t
f
V
I
n
THDT otal harmonic distortion
B
φ
†
Full range is 0°C to 70°C.
‡
For V
§
This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing on testing
or nontesting of other parameters.
¶
For V
Rise time
Fall time
Overshoot factor
Equivalent input noise
n
voltage
Peak-to-peak equivalent
N(PP)
input noise current
Equivalent input
noise current
Unity-gain bandwidth
1
m
ase margin at unity
= ±5 V, V
CC±
= ±5 V, V
CC±
§
‡
= ±1 V; for V
I(PP)
O(RMS)
= 1 V; for V
See Figure 1
V
= ±10 mV,
I(PP)
RL = 2 kΩ,
See Fi
RS = 20 Ω,
See Figure 3
f = 1 kHz25°C0.010.01pA/√Hz
RS = 1 kΩ,
¶
f = 1 kHz
VI = 10 mV,
CC±
=
ures 1 and 2
= 25 F,
p
= 10 mV,
I
= 25 F,
=
p
= ±15 V, V
= ±15 V, V
CC±
p
,
f = 10 Hz25°C7171
f = 1 kHz25°C191930
10 Hz t
f =
10 kHz
RL = 2 kΩ,
RL = 2 kΩ,
= 2 kΩ,
L
= ±5 V.
I(PP)
= 6 V.
O(RMS)
†
T
A
25°C17.8920.7
Full range
25°C15.4917.8
Full range8
25°C5556
0°C5455
70°C6363
25°C5557
0°C5456
70°C6264
25°C24%19%
0°C24%19%
70°C24%19%
25°C44µV
25°C0.003%0.003%
25°C33
0°C3.23.2
70°C2.62.7
25°C60°63°
0°C59°63°
70°C60°63°
V
= ± 5 VV
CC±
MINTYPMAXMINTYPMAX
CC±
8
= ± 15 V
UNIT
dB
mA
UNIT
n
MHz
z
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
17
TL05x, TL05xA, TL05xY
A
TL052I
VIOInput offset voltage
mV
V
TL052AI
V
IC
T
ffici
‡
V/°C
IIOInput offset current
O
,
IC
,
IIBInput bias current
O
,
IC
,
V
V
R
kΩ
V
V
R
2 kΩ
R
kΩ
V
g
V
R
kΩ
¶
voltage am lification
¶
C
V
V
rejection ratio
V
O
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178 – FEBRUARY 1997
TL052I and TL052AI electrical characteristics at specified free-air temperature
TL052I, TL052AI
PARAMETERTEST CONDITIONS
p
= 0,
O
=
= 0,
RS = 50 Ω
α
VIO
ICR
OM+
OM–
A
VD
r
i
c
i
CMRR
†
Full range is –40°C to 85°C.
‡
This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing on testing
or nontesting of other parameters
§
Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to
TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
TL052I and TL052AI electrical characteristics at specified free-air temperature (continued)
TL052I, TL052AI
k
SVR
I
CC
VO1/V
PARAMETERTEST CONDITIONS
Supply-voltage rejection
Supply current
p
Crosstalk attenuationAVD = 10025°C120120dB
O2
VO = 0,RS = 50 Ω
VO = 0,No load
T
A
25°C75997599
–40°C
85°C75997599
25°C4.65.64.85.6
–40°C
85°C4.46.44.66.4
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
75987598
4.56.44.76.4
CC±
= ±15 V
TL052I and TL052AI operating characteristics at specified free-air temperature
TL052I, TL052AI
PARAMETERTEST CONDITIONS
+
ew rate at unity gain
Negative slew rate at
–
unity gain
t
r
t
f
V
I
n
THDT otal harmonic distortion
B
φ
†
Full range is –40°C to 85°C.
‡
For V
§
This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing on testing
or nontesting of other parameters.
¶
For V
Rise time
Fall time
Overshoot factor
Equivalent input noise
n
voltage
Peak-to-peak equivalent
N(PP)
input noise current
Equivalent input noise
current
Unity-gain bandwidth
1
m
CC±
CC±
‡
§
ase margin at unity
= ±5 V, V
= ±5 V, V
= ±1 V; for V
I(PP)
O(RMS)
R
= 2 kΩ,C
See Figure 1
=
=
RL = 2 kΩ,CL = 100 pF,
See Figures 1 and 2
RS = 20 Ω,
See Figure 3
f = 1 kHz25°C0.010.01pA/√Hz
RS = 1 kΩ,
¶
f = 1 kHz
VI = 10 mV,
= 25 F,
p
= 10 mV,
I
= 25 F,
=
p
= ±15 V, V
CC±
= 1 V; for V
CC±
= ±15 V, V
= 100 pF,
,
f = 10 Hz25°C7171
f = 1 kHz25°C191930
10 Hz to
f =
10 kHz
RL = 2 kΩ,
RL = 2 kΩ,
= 2 kΩ,
L
= ±5 V.
I(PP)
= 6 V.
O(RMS)
†
T
A
25°C17.8920.7
Full range8
25°C15.4917.8
Full range8
25°C5556
–40°C5253
85°C6465
25°C5557
–40°C5153
85°C6465
25°C24%19%
–40°C24%19%
85°C24%19%
25°C44µV
25°C0.003%0.003%
25°C33
–40°C3.53.6
85°C2.52.6
25°C60°63°
–40°C58°61°
85°C60°63°
V
= ± 5 VV
CC±
MINTYPMAXMINTYPMAX
CC±
= ± 15 V
UNIT
dB
mA
UNIT
MHz
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
19
TL05x, TL05xA, TL05xY
A
TL052M
VIOInput offset voltage
mV
V
TL052AM
V
IC
R
S
Ω
TL052M
10
9
α
VIO
µV/°C
IIOInput offset current
O
IC
IIBInput bias current
O
V
V
R
kΩ
V
V
R
kΩ
R
kΩ
V
g
V
R
kΩ
L
diff
l
§
voltage am lification
§
,
C
V
IC
V
ICR
min,
rejection ratio
S
ratio (∆V
CC±
/∆VIO)
S
t
(two am lifiers)
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178 – FEBRUARY 1997
TL052M and TL052AM electrical characteristics at specified free-air temperature
TL052M, TL052AM
PARAMETERTEST CONDITIONS
p
= 0,
O
= 0,
= 50 Ω
50
Temperature coefficient
of input offset voltage
Input offset voltage longterm drift
ICR
OM+
OM–
A
VD
r
i
c
i
CMRR
k
SVR
I
CC
VO1/V
†
Full range is – 55°C to 125°C.
‡
Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to
TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
§
For V
Common-mode input
voltage range
Maximum positive peak
output voltage swing
Maximum negative peak
output voltage swing
Input resistance25°C
Input capacitance25°C1012pF
Crosstalk attenuationAVD = 10025°C120120dB
O2
= ± 5 V, VO = ± 2.3 V; at V
CC±
‡
p
p
arge-signal
ommon-mode
upply-voltage rejection
upply curren
erentia
p
p
R
VO = 0,
RS = 50 Ω
VO = 0,VIC = 0,
See Figure 5
VO = 0,
See Figure 5
= 10
L
= 2
L
= 10
L
= 2
L
RL = 2 kΩ
V
= V
min
VO = 0,
RS = 50 Ω
VO = 0,RS = 50 Ω
VO = 0,No load
= ±15 V, VO = ±10 V.
CC±
TL052AM
VIC = 0,
VIC = 0,
†
T
A
25°C0.733.50.651.5
Full range6.54.5
25°C0.512.80.40.8
Full range5.83.8
25°C to
125°C
25°C to
125°C
25°C0.040.04µV/mo
25°C41005100pA
125°C120220nA
25°C2020030200pA
125°C10502050nA
25°C
Full range
25°C34.21313.9
Full range313
25°C2.53.811.512.7
Full range2.511.5
25°C–2.5–3.5–12 –13.2
Full range –2.5–12
25°C–2.3–3.2–11–12
Full range –2.3–11
25°C255950105
–55°C307660149
125°C10321549
25°C65857593
–55°C65837592
125°C65847594
25°C75997599
–55°C
125°C7510075100
25°C4.65.64.85.6
–55°C
125°C4.26.44.46.4
V
= ± 5 VV
CC±
MINTYP MAXMINTYP MAX
98
–1
–2.3
to
to
4
5.6
–1
to
4
12
10
75987598
4.46.44.56.4
–11
11
–11
11
CC±
to
to
= ± 15 V
–12.3
to
15.6
12
10
UNIT
V/mV
Ω
dB
dB
mA
°
20
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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