TEXAS INSTRUMENTS TIL920, TIL921, TIL922, TIL920A, TIL921A Technical data
...
TIL920, TIL921, TIL922, TIL920A, TIL921A, TIL922A
TIL920B, TIL921B, TIL922B
SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS
SOOS032–D3908, FEBRUARY 1992
• AC Signal Input
• Gallium-Arsenide Diode Infrared Source
• Source Is Optically Coupled to Silicon
N-P-N Phototransistor
• Choice of One, Two, or Four Channels
• Choice of Three Current-Transfer Ratios
• High-Voltage Electrical Isolation... 7.5 kV
Peak (5.3 kV rms)
• Plastic Dual-In-Line Packages
• UL Listed – File No. E65085
description
These optocouplers consist of two gallium-arsenide light-emitting diodes connected in a reverse-parallel
configuration for ac-input applications and a silicon n-p-n phototransistor per channel. The TIL920 has one
channel in a 4-pin package, the TIL921 has two channels in an 8-pin package, and the TIL922 has four channels
in a 16-pin package. The standard devices, TIL920, TIL921, and TIL922, are tested for a current-transfer ratio
of 20% minimum. Devices selected for a current-transfer ratio of 50% and 100% minimum are designated with
the suffix A and B respectively.
mechanical data
4,80 (0.189)
4,19 (0.165)
TIL920
1
10,2 (0.400)
9,2 (0.362)
TIL921
TIL922
C
105°
°
90
0,36 (0.014)
0,20 (0.008)
NOTE A: Each pin centerline is located 0,25 (0.010) of its true longitudinal position.
C
LL
7,62 (0.300) T.P.
(see Note A)
6,76 (0.266)
6,25 (0.246)
3,81 (0.150)
3,30 (0.130)
Seating Plane
3,81 (0.150)
2,54 (0.100)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
5,08 (0.200) MAX
2,79 (0.110)
2,29 (0.090)
(see Note A)
0,51 (0.020) MIN
1
21,1 (0.831)
18,5 (0.728)
1
1,27 (0.050)
1,12 (0.044)
0,58 (0.023)
0,43 (0.017)
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Copyright 1992, Texas Instruments Incorporated
1
TIL920, TIL921, TIL922, TIL920A, TIL921A, TIL922A
TIL920B, TIL921B, TIL922B
SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS
SOOS032–D3908, FEBRUARY 1992
schematic diagrams
A/K
K/A
1
2
TIL920
(TOP VIEW)
4
C
3
E
1 A/K
1 K/A
2 A/K
2 K/A
1
2
3
4
TIL921
(TOP VIEW)
TIL922
(TOP VIEW)
8
1C
7
1E
6
2C
5
2E
1A/K
1K/A
2A/K
2K/A
3A/K
3K/A
4A/K
4K/A
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
1C
1E
2C
2E
3C
3E
4C
9
4E
absolute maximum ratings, T
= 25°C (unless otherwise noted)
A
Input-to-output voltage (see Note 1) ±7.5 kV peak or dc (±5.3 kV rms). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-emitter voltage (see Note 2) 35 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-collector voltage 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) ±50 mA. . . . .
Continuous power dissipation at (or below) 25°C free-air temperature:
Phototransistor (see Note 4) 150 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode plus phototransistor per channel (see Note 5) 200 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
–55°C to 100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
Storage temperature range –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NOTES: 1. This rating applies for sine-wave operation at 50 or 60 Hz. Service capability is verified by testing in accordance with UL requirements.
electrical characteristics, T
†
NOTES: 6. These parameters are measured between all input-diode leads shorted together and all phototransistor leads shorted together.
2. This value applies when the base-emitter diode is open circuited.
3. Derate linearly to 100°C free-air temperature at the rate of 0.67 mA/°C.
4. Derate linearly to 100°C free-air temperature at the rate of 2 mW/°C.
5. Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/°C.
= 25°C (unless otherwise noted)
A
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
V
(BR)ECO
I
C(off)
†
CTR
†
V
F
V
CE(sat)
C
io
r
io
I
C(on)1
I
C(on)2
These parameters apply to either direction of the input current.
Collector-emitter breakdown voltage IC = 0.5 mA, IF = 0 35 V
Emitter-collector breakdown voltage IC = 100 µA, IF = 0 7 V
Off-state collector current VCE = 24 V, IF = 0 100 nA
Current TIL920, TIL921, TIL922 20%
transfer TIL920A, TIL921A, TIL922A IF = 5 mA, VCE = 5 V 50%
ratio TIL920B, TIL921B, TIL922B 100%
Input diode static forward voltage IF = 20 mA 1.4 V
†
Collector-emitter saturation voltage IF = 5 mA, IC = 1 mA 0.4 V
Input-to-output capacitance V
Input-to-output internal resistance V
On-state collector current symmetry ratio
(see Note 7)
7. The higher of the two values of I
generated by the two diodes is taken as I
C(on)
in-out
in-out
VCE = 5 V, IF = 5 mA 1 3
= 0, f = 1 MHz, See Note 6 1 pF
= ±1 kV, See Note 6 10
.
C(on)1
11
Ω
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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