TEXAS INSTRUMENTS SLTS221 Technical data

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PTHxx050Y —Series
6-A Non-Isolated DDR/QDR Memory Bus Termination Modules
NOMINAL SIZE = 0.87 in x 0.5 in
(22,1 mm x 12,57 mm)
Description
The PTHxx050Y are a series of ready­to-use switching regulator modules from Texas Instruments designed specifically for bus termination in DDR and QDR memory applications. Operating from either a 3.3-V, 5-V or 12-V input, the modules generate
output that will source or sink up
a V
TT
to 6 A of current (8 A transient) to accu­rately track their V required bus termination supply voltage, and V
is the reference voltage for the
REF
memory and chipset bus receiver com­parators. V V
DDQ
REF
power supply voltage.
Both the PTHxx050Y series employs an actively switched synchronous rectifier
input. VTT is the
REF
is usually set to half the
Features
VTT Bus Termination Output
(Output Tracks the System V
6 A Output Current (8 A Peak)
3.3-V, 5-V or 12-V Input Voltage
DDR & QDR Compatible
On/Off Inhibit (for V
Standby)
TT
Under-Voltage Lockout
Operating Temp: –40 to +85 °C
output to provide state-of-the-art step­down switching conversion. The products
are small in size (0.87 in × 0.5 in), and are
an ideal choice where space, performance, and high efficiency are desired, along with the convenience of a ready-to-use module.
Operating features include an on/off inhibit and output over-current protection (source mode only). The on/off inhibit feature allows the V
bus to be turned
TT
off to save power in a standby mode of operation.
Package options include both through­hole and surface mount configurations.
Efficiencies up to 88 %
)
50 W/in³ Power Density
Output Over-Current Protection
Safety Agency Approvals (Pending):
Point-of-Load Alliance (POLA)
SLTS221 – MARCH 2004
(Non-Latching, Auto-Reset)
UL/cUL60950, EN60950, VDE
Compatible
Pin Configuration
Pin Function
1 GND 2V
REF
3V
IN
4 Inhibit * 5 No Connect 6V
TT
* Denotes negative logic:
Open = VTT Output On Ground = VTT Output Off
Standard Application
V
IN
V
DDQ
1 k 1 %
1 k 1 %
C
IN
(Required)
Q
1
Standby
GND
Cin= Required electrolytic capacitor; 220 µF (3.3-/5-V input), 560 µF (12-V input). Co1= Required low-ESR electrolyitic capacitor; 470 µF (3.3-/5-V input), 940 µF (12-V input). Co2= Ceramic capacitance for optimum response to a 3-A (±1.5-A) load transient.; 200 µF (3.3-/5-V input), 400 µF (12-V input). Con= Distributed hf-ceramic decoupling capacitors for VTT bus; as recommended for DDR memory appications.
BSS138 (Optional)
1 2 3 4
PTHxx050Y
(Top View)
6
5
Co
1
Low-ESR (Required)
Co
2
Ceramic (Optional)
Co
n
hf-Ceramic
V
TT
Termination Island
SSTL-2
Data/
Address
Bus
V
REF
V
TT
For technical support and further information, visit http://power.ti.com
PTHxx050Y —Series
6-A Non-Isolated DDR/QDR Memory Bus Termination Modules
Ordering Information
Input Voltage
(PTHHH050Yxx)
Code Input Voltage
03 3.3 V 05 5 V 12 12 V
Notes: (1) Add “T” to end of part number for tape and reel on SMD packages only.
(2) Reference the applicable package reference drawing for the dimensions and PC board layout (3) “Standard” option specifies 63/37, Sn/Pb pin solder material.
Package Options
(PTHxx050YHH)
Code Description Pkg Ref.
AH Horiz. T/H (EUU) AS SMD, Standard
Pin Descriptions
VIN: The positive input voltage power node to the mod-
ule, which is referenced to common GND.
GND: This is the common ground connection for the
V
and VTT power connections. It is also the 0-VDC
IN
reference for the control inputs.
V
: The module senses the voltage at this input to regu-
REF
late the output voltage, VTT. The voltage at V the reference voltage for the system bus receiver com­parators. It is normally set to precisely half the bus driver supply voltage (V
÷ 2), using a resistor divider (see
DDQ
standard application). The Thevenin impedance of the network driving the V
pin should not exceed 500 Ω.
REF
REF
is also
SLTS221 – MARCH 2004
(1)
(2)
(3)
(EUV)
VTT: This is the regulated power output from the module with respect to the GND node, and the tracking termi­nation supply for the application data and address buses. It is precisely regulated to the voltage applied to the module’s V
input, and is active active about 20 ms
REF
after a valid input source is applied to the module. Once active it will track the voltage applied at V
REF
.
Inhibit: The Inhibit pin is an open-collector/drain negative logic input that is referenced to GND. Applying a low­level ground signal to this input turns off the output voltage, VTT. When the Inhibit is active, the input cur­rent drawn by the regulator is significantly reduced. If the Inhibit pin is left open circuit, the module will pro­duce an output whenever a valid input source is applied.
Environmental & Absolute Maximum Ratings (Voltages are with respect to GND)
Characteristics Symbols Conditions Min Typ Max Units
Control Input Voltage V Operating Temperature Range T Solder Reflow Temperature T Storage Temperature T Mechanical Shock Per Mil-STD-883D, Method 2002.3
Mechanical Vibration Mil-STD-883D, Method 2007.2
Weight 2.9 grams Flammability Meets UL 94V-O
Notes: (i) For operation below 0 °C the external capacitors m ust bave stable characteristics. use either a low ESR tantalum, Os-Con, or ceramic capacitor.
(ii) During reflow of SMD package version do not elevate peak temperature of the module, pins or internal components above the stated maximum.
REF
a
reflow
s
Over Vin Range –40 Surface temperature of module body or pins 235 — –40 125 °C
1 msec, ½ Sine, mounted
20-2000 Hz
–0.3 Vin + 0.3 V
(i)
85 °C
500 G’s
—20— Gs
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(ii)
°C
PTHxx050Y —Series
6-A Non-Isolated DDR/QDR Memory Bus Termination Modules
Specifications (Unless otherwise stated, T
=25 °C; nominal Vin; V
a
=1.25 V; Cin, Co1, & Co2 =typical values; and Io =Iomax)
REF
SLTS221 – MARCH 2004
PTHxx050Y
Characteristics Symbols Conditions Min Typ Max Units
Output Current I
Input Voltage Range V
Tracking Range for V Tracking Tolerance to V
REF
REF
VV
o
in
REF
–V
Over line, load and temperature –10 +10 mV
TT
REF
Efficiency η I
Vo Ripple (pk-pk) V
r
Over ∆V
range, Continuous 0 ±6
REF
Repetitive pulse ±8
Over Io range PTH03050Y 2.95 3.65
PTH05050Y 4.5 5.5 V PTH12050Y 10.8 13.2
0.55 1.8 V
=4 A PTH03050Y 88
o
PTH05050Y 87 % PTH12050Y 84
20 MHz bandwidth 20 mVpp
(1)
(2)
Over-Current Threshold Io trip Reset, followed by auto-recovery 12 A Load Transient Response 15 A/µs load step, fr om –1.5 A to +1.5 A
t V
tr
tr
Under-Voltage Lockout UVLO V
Inhibit Control (pin4) Referenced to GND Input High Voltage V Input Low Voltage V
IH IL
(See note 5) Recovery Time 80 µSec
increasing PTH03050Y 2.45 2.8
in
decreasing PTH03050Y 2.2 2.40
V
in
Vo over/undershoot 25 40 mV
PTH05050Y 4.3 4.45 V PTH12050Y 9.5 10.4
PTH05050Y 3.4 3.7 V PTH12050Y 8.8 9
Vin –0.5 Open –0.2 0.6
(3)
Input Low Current IIL inhibit Pin to GND –130 µA Input Standby Current Iin inh Inhibit (pin 4) to GND 10 mA Switching Frequency ƒ
External Input Capacitance C
External Output Capacitance Co
s
in
, Co
1
Reliability MTBF Per Bellcore TR-332 6 10
Notes:
(1) Rating is conditional on the module being directly soldered to a 4-layer PCB with 1 oz. copper. See the SOA curves or contact the factory for appropriate
derating. The PTH03050Y and PTH05050Y require no derating up to 85 °C operating temperature and natural convection airflow. (2) Up to 10 ms pulse period at 10 % maximum duty. (3) This control pin has an internal pull-up to the input voltage Vin. If it is left open-circuit the module will operate when input power is applied. A small
low-leakage (<100 nA) MOSFET is recommended for control. For further information, consult the related application note. (4) An input capacitor is required for proper operation. The capacitor must be rated for a minimum of 300 mA rms (750 mA rms for 12-V input) of ripple
current. (5) The typical value of external output capacitance value ensures that V
terminations. Lower values of capacitance may be possible when the (6) This is the calculated maximum. The minimum ESR limitation will often result in a lower value. Consult the application notes for further guidance. (7) This is the typcial ESR for all the electrolytic (non-ceramic) output capacitance. Use 7 m
Over Vin & Io ranges PTH03050Y/PTH05050Y 550 600 650
PTH03050Y/PTH05050Y 220
Capacitance value:
2
non-ceramic PTH03050Y/PTH05050Y 0 470
ceramic PTH03050Y/PTH05050Y 0 200
Equiv. series resistance (non-ceramic) 4
PTH12050Y 200 250 300
(4)
PTH12050Y 560
(4)
PTH12050Y 940
PTH12050Y 0 400
(7)
50 % stress, Ta =40 °C, ground benign
meets the specified transient performance requirements for the memory bus
TT
measured peak change in output current is consistently less than 3 A.
as the minimum when using max-ESR values to calculate.
—— ——
(5) (5)
(5) (5)
(6)
3,300
(6)
3,300 300 µF
600
——m
A A
V
kHz
µF
µF
6
Hrs
For technical support and further information, visit http://power.ti.com
PTHxx050Y —Series
)
)
Typical Characteristics
6-A Non-Isolated DDR/QDR Memory Bus Termination Modules
Characteristic Data; V
Efficiency vs Load Current
100
90
80
70
Efficiency - %
60
50
0123456
Output Ripple vs Load Current (See Note 2 to Table)
50
40
30
20
Ripple - mV
10
0
0123456
Iout - Amps
Iout - Amps
=1.25 V (See Note A)
REF
V
IN
3.3 V 5 V 12 V
V
IN
3.3 V 5 V 12 V
Safe Operating Area; V
PTH03050Y/PTH05050Y at nominal V
90
80
70
60
50
40
Ambient Temperature (°C)
30
20
0123456
PTH12050Y only; VIN =12 V
90
80
70
60
50
40
Ambient Temperature (°C)
30
20
0123456
Iout (A
Iout (A
=1.25 V (See Note B)
REF
SLTS221 – MARCH 2004
IN
Airflow
Nat Conv
Airflow
400LFM 200LFM 100LFM Nat Conv
Power Dissipation vs Load Current
1.5
1.2
0.9
0.6
Pd - Watts
0.3
0
0123456
Iout - Amps
V
IN
3.3 V 5 V 12 V
Transient Performance for
∆∆
4-A Load Change
∆∆
PTH03050Y: Sink to Source Transient
HORIZ SCALE: 100 µs/Div
V – V
TT
(50 mV/Div)
(5 A/Div)
±I
TT
REF
Note A: Characteristic data has been developed from actual products tested at 25°C. This data is considered typical data for the Converter.
Note B:
SOA graphs represent the conditions at which internal components are at or below the manufacturer’s maximum operating temperatures. Derating limits apply to
modules soldered directly to a 4 in
×
4 in. double-sided PCB with 1 oz. copper.
For technical support and further information, visit http://power.ti.com
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