Power-Down/Power-Up Cycle
The bq4285E/L power-up/power-down cycles are different. The bq4285L continuously monitors VCCfor out-oftolerance. During a power failure, when VCCfalls below
V
PFD
(2.53V typical), the bq4285L write-protects the clock
and storage registers. The power source is switched to BC
when VCCis less than V
PFD
and BC is greater than V
PFD
,
or when VCCis less than VBCand VBCis less than V
PFD
.
RTC operation and storage data are sustained by a valid
backup energy source. When VCCis above V
PFD
, the power
source is VCC. Write-protection continues for t
CSR
time af-
ter VCCrises above V
PFD
.
The bq4285E continuously monitors V
CC
for out-oftolerance. During a power failure, when VCCfalls below
V
PFD
(4.17V typical), the bq4285E write-protects the clock
and storage registers. When VCCis below VBC(3V typical),
the power source is switched to BC. RTC operation and
storage data are sustained by a valid backup energy source.
When VCCis above VBC, the power source is VCC. Writeprotection continues for t
CSR
time after VCCrises above
V
PFD
.
An external CMOS static RAM is battery-backed using
the V
OUT
and chip enable output pins from the
bq4285E/L. As the voltage input VCCslows down during
a power failure, the chip enable output, CE
OUT,
is forced
inactive independent of the chip enable input CE
IN.
This activity unconditionally write-protects the external
SRAM as VCCfalls below V
PFD
. If a memory access is in
process to the external SRAM during power-fail detection, that memory cycle continues to completion before
the memory is write-protected. If the memory cycle is
not terminated within time t
WPT
(30µs maximum), the
chip enable output is unconditionally driven high,
write-protecting the controlled SRAM.
As the supply continues to fall past V
PFD
, an internal
switching device forces V
OUT
to the external backup energy
source. CE
OUT
is held high by the V
OUT
energy source.
During power-up, V
OUT
is switched back to the main
supply as VCCrises above the backup cell input voltage
sourcing V
OUT
.IfV
PFD<VBC
on the bq4285L, the
switch to the main supply occurs at V
PFD
.CE
OUT
is held
inactive for time t
CER
(200ms maximum) after the power
supply has reached V
PFD
, independent of the CEINin-
put, to allow for processor stabilization.
During power-valid operation, the CE
IN
input is passed
through to the CE
OUT
output with a propagation delay
of less than 10ns.
Figure 4 shows the hardware hookup for the external RAM.
A primary backup energy source input is provided on
the bq4285E/L. The BC input accepts a 3V primary battery, typically some type of lithium chemistry. To prevent battery drain when there is no valid data to retain,
V
OUT
and CE
OUT
are internally isolated from BC by the
initial connection of a battery. Following the first application of VCCabove V
PFD
, this isolation is broken, and
the backup cell provides power to V
OUT
and CE
OUT
for
the external SRAM.
8
bq4285E/L
Jan.1999 B
Figure 4. External RAM Hookup to the bq4285E/L RTC