Telefunken TSUS4300 Datasheet
TSUS4300
Vishay Telefunken
GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package
Description
TSUS4300 is an infrared emitting diode in standard
GaAs on GaAs technology, molded in a clear,
blue tinted plastic package. Its lens provides a
high radiant intensity without external optics.
Features
D
High radiant power and radiant intensity
D
Low forward voltage
D
Suitable for DC and high pulse current operation
D
Standard T–1(ø 3 mm) package
D
Angle of half intensity ϕ = ± 16
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 950 nm
°
94 8636
Applications
Infrared remote control systems with small package and low cost requirements in combination with silicon photo
detectors. Infrared source in reflective sensors, tabe end detection. Excellent matching with phototransistor
TEFT 4300.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T=0.5, tp=100 ms I
Surge Forward Current tp=100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
t x 5sec, 2 mm from case
FSM
T
R
F
FM
V
j
amb
stg
sd
thJA
5 V
100 mA
200 mA
2 A
170 mW
100
–55...+100
–55...+100
260
450 K/W
°
C
°
C
°
C
°
C
Document Number 81053
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
TSUS4300
g
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1.5 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100 mA TK
Reverse Current VR = 5 V I
Breakdown Voltage IR = 100 mA V
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1.5 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 20 mA TK
F
F
VF
R
(BR)
j
e
e
f
e
f
5 40
7 18 mW/sr
e
Angle of Half Intensity ϕ ±16 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
IF = 1.5 A t
Fall Time IF = 100 mA t
IF = 1.5 A t
l
Dl
p
l
p
r
r
f
f
1.3 1.7 V
2.2 V
–1.3 mV/K
100
m
30 pF
160 mW/sr
20 mW
–0.8 %/K
950 nm
50 nm
0.2 nm/K
800 ns
400 ns
800 ns
400 ns
A
Typical Characteristics (T
250
200
150
R
100
V
50
P – Power Dissipation ( mW )
0
020406080
T
94 8029 e
Figure 1. Power Dissipation vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
thJA
= 25_C unless otherwise specified)
amb
100
125
100
75
50
F
I – Forward Current ( mA )
25
0
020406080
T
94 7916 e
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
R
thJA
100
www.vishay.de • FaxBack +1-408-970-5600
2 (5) Rev. 2, 20-May-99
Document Number 81053
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