Telefunken TSTS7303, TSTS7302, TSTS7301, TSTS7300 Datasheet
TSTS730.
Vishay Telefunken
GaAs IR Emitting Diodes in Hermetically Sealed TO18
Case
Description
The TSTS730. series are infrared emitting diodes in
standard GaAs technology in a hermetically sealed
TO–18 package. Their glass lenses provide a high radiant intensity without external optics.
Features
D
High radiant intensity
D
Suitable for pulse operation
D
Angle of half intensity ϕ = ± 12
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 950 nm
°
94 8642
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation P
Junction Temperature T
Storage Temperature Range T
Thermal Resistance Junction/Ambient R
Thermal Resistance Junction/Case R
T
x 25 °C
case
tp/T = 0.5, tp x 100 ms,
T
x 25 °C
case
tp x 100 ms
T
x 25 °C
case
I
I
FM
I
FSM
P
thJA
thJC
F
stg
R
V
V
j
5 V
250 mA
500 mA
2.5 A
170 mW
500 mW
100
–55...+100
450 K/W
150 K/W
°
C
°
C
Document Number 81048
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
TSTS730.
y
F
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage
IF = 100 mA, tp x 20 ms
Breakdown Voltage IR = 100 mA V
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Power
Temp. Coefficient of
f
e
IF = 100 mA, tp x 20 ms
IF = 100 mA TK
Angle of Half Intensity ϕ ±12 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Rise Time IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
Fall Time IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
V
F
(BR)
f
e
f
l
p
Dl
t
r
t
f
1.3 1.7 V
5 V
j
30 pF
7 mW
e
–0.8 %/K
950 nm
50 nm
400 ns
400 ns
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Radiant Intensity IF=100mA, tp=20ms TSTS7300 I
TSTS7301 I
TSTS7302 I
TSTS7303 I
Typical Characteristics (T
600
R
thJC
500
400
300
200
R
V
P – Power Dissipation ( mW )
thJA
100
= 25_C unless otherwise specified)
amb
300
250
200
150
100
F
I – Forward Current ( mA )
50
e
e
e
e
R
thJA
4 6.3 mW/sr
6.3 10 12.5 mW/sr
10 16 20 mW/sr
16 25 32 mW/sr
R
thJC
0
0 25 50 75 100
T
94 8017 e
Figure 1. Power Dissipation vs. Ambient Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (5) Rev. 2, 20-May-99
– Ambient Temperature ( °C )
amb
125
0
020406080
T
94 8018 e
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
Document Number 81048
100
Loading...