Telefunken TSTA7100 Datasheet
TSTA7100
Vishay Telefunken
GaAlAs IR Emitting Diode in Hermetically Sealed TO18
Case
Description
TSTA7100 is a high efficiency infrared emitting diode
in GaAlAs on GaAlAs technology in a hermetically
sealed TO–18 package. Its glass lens provides a very
high radiant intensity without external optics.
Features
D
Extra high radiant intensity
D
High radiant power
D
Suitable for pulse operation
D
Narrow angle of half intensity ϕ = ± 5
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 875 nm
°
94 8483
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current
Surge Forward Current
Power Dissipation P
Junction Temperature T
Storage Temperature Range T
Thermal Resistance Junction/Ambient R
Thermal Resistance Junction/Case R
tp/T = 0.5, tp x 100 ms
tp x 100 ms
T
x 25 °C
case
I
FM
I
FSM
P
thJA
thJC
F
stg
R
V
V
j
5 V
100 mA
200 mA
2.5 A
180 mW
500 mW
100
–55...+100
450 K/W
150 K/W
°
C
°
C
Document Number 81044
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
TSTA7100
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage
IF = 100 mA, tp x 20 ms
Breakdown Voltage IR = 100 mA V
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity
Radiant Power
Temp. Coefficient of
f
e
IF = 100 mA, tp x 20 ms
IF = 100 mA, tp x 20 ms
IF = 100 mA TK
Angle of Half Intensity ϕ ±5 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Rise Time IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
Fall Time IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
V
F
(BR)
I
e
f
e
f
l
p
Dl
t
r
t
f
1.4 1.8 V
5 V
j
20 pF
20 50 mW/sr
10 mW
e
–0.7 %/K
875 nm
80 nm
300 ns
300 ns
Typical Characteristics (T
600
R
thJC
500
400
300
200
R
V
P – Power Dissipation ( mW )
12790
Figure 1. Power Dissipation vs. Ambient Temperature
thJA
100
0
0 25 50 75 100
T
– Ambient Temperature ( °C )
amb
= 25_C unless otherwise specified)
amb
125
125
100
R
thJC
75
50
R
F
I – Forward Current ( mA )
25
0
020406080
T
94 7971 e
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
thJA
100
www.vishay.de • FaxBack +1-408-970-5600
2 (6) Rev. 2, 20-May-99
Document Number 81044
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