Telefunken TSSS2600 Datasheet
TSSS2600
Vishay Telefunken
GaAs IR Emitting Diode in Side View Miniature Package
Description
TSSS2600 is a miniature infrared emitting diode in
GaAs on GaAs technology , molded in a clear , untinted
plastic package with cylindrical side view lens.
The device is spectrally matched to silicon photodiodes and phototransistors.
Features
D
Low forward voltage
D
Suitable for DC and high pulse current operation
D
Side view emitter for miniature design
D
Horizontal angle of half intensity ± 25
D
Vertical angle of half intensity ± 60
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
= 950 nm
l
p
°
°
94 8672
Applications
Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low
forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600)
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
t x 5sec, 2 mm from case
FSM
T
R
F
FM
V
j
amb
stg
sd
thJA
5 V
100 mA
200 mA
2 A
170 mW
100
–55...+100
–55...+100
260
450 K/W
°
C
°
C
°
C
°
C
Document Number 81042
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
TSSS2600
g
y
gy
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1.5 A, tp = 100 ms V
Temp. Coefficient of V
F
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
Angle of Half Intensity horizontal ϕ
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
Rise Time IF = 100 mA t
Fall Time IF = 100 mA t
IF = 100mA TK
IF = 1.5 A, tp = 100 ms I
IF = 100 mA TK
vertical ϕ
IF = 100 mA TK
IF = 1.5 A t
IF = 1.5 A t
f
l
Dl
F
F
VF
R
j
e
e
e
f
1
2
p
1 2.6 mW/sr
e
1.25 1.6 V
2.2 V
–1.3 mV/K
100
m
A
30 pF
25 mW/sr
20 mW
–0.8 %/K
±25 deg
±60 deg
950 nm
50 nm
l
p
r
r
f
f
0.2 nm/K
800 ns
400 ns
800 ns
400 ns
Typical Characteristics (T
250
200
150
R
100
V
50
P – Power Dissipation ( mW )
0
020406080
T
94 8029 e
Figure 1. Power Dissipation vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
thJA
= 25_C unless otherwise specified)
amb
100
125
100
75
50
F
I – Forward Current ( mA )
25
0
020406080
T
94 7916 e
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
R
thJA
100
www.vishay.de • FaxBack +1-408-970-5600
2 (5) Rev. 2, 20-May-99
Document Number 81042
Loading...