Telefunken TSSF4500 Datasheet

TSSF4500

Vishay Telefunken

High Speed Infrared Emitting Diode in Side View
Package

Description

TSSF4500 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package with spheri­cal side view lens.
The new technology combines the high speed of DH–
GaAlAs with the efficiency of standard GaAlAs and the
low forward voltage of the standard GaAs technology .

Features

D

High modulation bandwidth (10 MHz)

D

Extra high radiant power and high radiant inten­sity

D

Low forward voltage

D

Suitable for high pulse current operation

D

Angle of half intensity ϕ = ± 22

D

Peak wavelength

D

High reliability

D

Good spectral matching to Si photodetectors

lp = 870 nm

°

94 8688

Applications

Infrared high speed remote control and free air data transmission systems with high modulation frequencies or
high data transmission rate requirements.
TSSF4500 is ideal for the design of transmission systems according to IrDA requirements and for carrier fre­quency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz).

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R

t x 5sec, 2 mm from case

FSM

T

R

F

FM

V

j

amb

stg

sd

thJA

5 V
100 mA
200 mA

1.5 A
170 mW
100

–40...+100
–40...+100

260
450 K/W

°

C

°

C

°

C

°

C

Document Number 81040
Rev. 3, 20-May-99

www.vishay.de • FaxBack [phone]

1 (3)

TSSF4500

g

y

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit

Forward Voltage IF = 100 mA, tp = 20 ms V

IF = 1.5 A, tp = 100 ms V

Temp. Coefficient of V

F

IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I

IF = 1 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of

f

e

IF = 100 mA TK

F
F
VF

R

j
e
e

f

e

10 20 mW/sr

f

e

Angle of Half Intensity ϕ ±22 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of

l

p

IF = 100 mA TK
Rise Time IF = 100 mA t
Fall Time IF = 100 mA t

l

Dl

p

l

p
r
f

1.35 1.6 V

2.4 V

–1.7 mV/K

10

m

160 pF

200 mW/sr

35 mW

–0.7 %/K

870 nm

40 nm

0.2 nm/K
30 ns
30 ns

A

Dimensions in mm

9612206

www.vishay.de • FaxBack [phone]
2 (3) Rev. 3, 20-May-99

Document Number 81040