Telefunken TSPF5400 Datasheet
TSPF5400
Vishay Telefunken
High Speed IR Emitting Diode in ø 5 mm (T–1¾)
Package
Description
TSPF5400 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
The new technology combines the high speed of DH–
GaAlAs with the efficiency of standard GaAlAs and the
low forward voltage of the standard GaAs technology .
94 8390
Features
D
High modulation bandwidth (10 MHz)
D
Extra high radiant power and radiant intensity
D
Low forward voltage
D
Standard T–1¾ (ø 5 mm) package
D
Angle of half intensity ϕ = ± 24
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 870 nm
°
Applications
Infrared high speed remote control and free air data transmission systems with high modulation frequencies or
high data transmission rate requirements.
TSPF5400 is ideal for the design of transmission systems and for carrier frequency based systems (e.g. ASK
/ FSK – coded, 450 kHz or 1.3 MHz).
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
Document Number 81038
Rev. 2, 20-May-99
t x 5sec, 2 mm from case
www.vishay.de • FaxBack +1-408-970-5600
R
F
FSM
V
amb
stg
T
sd
thJA
5 V
100 mA
200 mA
210 mW
j
100
–40...+100
–40...+100
260
350 K/W
°
°
°
°
C
C
C
C
1 (6)
TSPF5400
g
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 200 mA, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 100 mA TK
F
F
VF
R
j
e
f
e
30 45 mW/sr
f
e
Angle of Half Intensity ϕ ±24 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
Fall Time IF = 100 mA t
Dl
l
p
½
l
p
r
f
1.5 1.8 V
1.8 2.1 V
–1.7 mV/K
10
m
160 pF
40 mW
–0.7 %/K
870 nm
50 nm
0.2 nm/K
30 ns
30 ns
A
Typical Characteristics (T
250
200
150
R
thJA
100
V
50
P – Power Dissipation ( mW )
0
020406080
T
94 7957 e
Figure 1. Power Dissipation vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
= 25_C unless otherwise specified)
amb
100
250
200
150
100
R
F
I – Forward Current ( mA )
50
0
020406080
T
94 8879
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
thJA
100
www.vishay.de • FaxBack +1-408-970-5600
2 (6) Rev. 2, 20-May-99
Document Number 81038
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