Telefunken TSHA5203, TSHA5202, TSHA5201, TSHA5200 Datasheet
TSHA520.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾)
Package
Description
The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
70 % radiant power improvement.
94 8390
Features
D
Extra high radiant power and radiant intensity
D
Suitable for high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Angle of half intensity ϕ = ± 12
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 875 nm
°
Applications
Infrared remote control and free air transmission systems with high power and long transmission distance requirements in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
Document Number 81019
Rev. 2, 20-May-99
t x 5sec, 2 mm from case
www.vishay.de • FaxBack +1-408-970-5600
R
F
FM
FSM
V
amb
stg
T
sd
thJA
5 V
100 mA
200 mA
2.5 A
210 mW
j
100
–55...+100
–55...+100
260
350 K/W
°
°
°
°
C
C
C
C
1 (6)
TSHA520.
gFm
F
Radiant Intensity
F
m
F
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Temp. Coefficient of
f
e
IF = 20 mA TK
F
VF
R
j
f
e
Angle of Half Intensity ϕ ±12 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
IF = 1.5 A t
Fall Time IF = 100 mA t
IF = 1.5 A t
l
Dl
p
l
p
r
r
f
f
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward Voltage IF=1.5A, tp=100ms TSHA5200/5201 V
TSHA5202/5203 V
IF=100mA, TSHA5200 I
tp=20ms
TSHA5201 I
TSHA5202 I
TSHA5203 I
IF=1.5A, tp=100ms TSHA5200 I
TSHA5201 I
TSHA5202 I
TSHA5203 I
Radiant Power IF=100mA, TSHA5200
tp=20ms
TSHA5201
TSHA5202
TSHA5203
F
F
e
e
e
e
e
e
e
e
f
e
f
e
f
e
f
e
25 40 mW/sr
30 50 mW/sr
36 60 mW/sr
50 65 mW/sr
300 500 mW/sr
400 600 mW/sr
500 700 mW/sr
600 800 mW/sr
1.5 1.8 V
–1.6 mV/K
100
m
20 pF
–0.7 %/K
875 nm
80 nm
0.2 nm/K
600 ns
300 ns
600 ns
300 ns
3.2 4.9 V
3.2 4.5 V
22 mW
23 mW
24 mW
25 mW
A
www.vishay.de • FaxBack +1-408-970-5600
2 (6) Rev. 2, 20-May-99
Document Number 81019
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