Telefunken TSHA4401, TSHA4400 Datasheet
TSHA440.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1)
Package
Description
The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
50 % radiant power improvement.
Features
D
Extra high radiant power
D
High radiant intensity for long transmission distance
D
Suitable for high pulse current operation
D
Standard T–1(ø 3 mm) package for low space
application
D
Angle of half intensity ϕ = ± 20
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
l
= 875 nm
p
°
94 8398
Applications
Infrared remote control and free air transmission systems with high power requirements in combination with PIN
photodiodes or phototransistors.
Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
t x 5sec, 2 mm from case
FSM
T
R
F
FM
V
j
amb
stg
sd
thJA
5 V
100 mA
200 mA
2 A
180 mW
100
–55...+100
–55...+100
260
450 K/W
°
C
°
C
°
C
°
C
Document Number 81017
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
TSHA440.
g
y
F
F
m
F
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1.5 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Temp. Coefficient of
f
e
IF = 100 mA TK
F
F
VF
R
j
f
e
Angle of Half Intensity ϕ ±20 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
IF = 1.5 A t
Fall Time IF = 100 mA t
IF = 1.5 A t
l
Dl
p
l
p
r
r
f
f
1.5 1.8 V
3.2 4.9 V
–1.6 mV/K
100
m
20 pF
–0.7 %/K
875 nm
80 nm
0.2 nm/K
600 ns
300 ns
600 ns
300 ns
A
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Radiant Intensity IF=100mA, tp=20ms TSHA4400 I
TSHA4401 I
IF=1.5A, tp=100ms TSHA4400 I
TSHA4401 I
Radiant Power IF=100mA, tp=20ms TSHA4400
TSHA4401
Typical Characteristics (T
250
200
150
R
thJA
100
V
50
P – Power Dissipation ( mW )
= 25_C unless otherwise specified)
amb
125
100
75
50
F
I – Forward Current ( mA )
25
e
e
e
e
f
e
f
e
12 20 mW/sr
16 30 mW/sr
140 240 mW/sr
190 360 mW/sr
20 mW
24 mW
0
020406080
T
12789
Figure 1. Power Dissipation vs. Ambient Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (5) Rev. 2, 20-May-99
– Ambient Temperature ( °C )
amb
100
0
020406080
T
94 7941 e
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
Document Number 81017
100
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