Telefunken TSFF5200 Datasheet
TSFF5200
Vishay Telefunken
High Speed IR Emitting Diode in ø5 mm (T–1¾)
Package
Description
TSFF5200 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
The new technology combines the high speed of DH–
GaAlAs with the efficiency of standard GaAlAs and the
low forward voltage of the standard GaAs technology .
Features
D
High modulation bandwidth (35 MHz)
D
Extra high radiant power and radiant intensity
D
Low forward voltage
D
Suitable for high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Angle of half intensity ϕ = ± 10
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 870 nm
°
94 8390
Applications
IInfrared video data transmission between Camcorder and TV set.
Free air data transmission systems with high modulation frequencies or
high data transmission rate requirements.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t x 5sec, 2 mm from case T
Thermal Resistance Junction/Ambient R
R
F
FM
FSM
V
amb
stg
sd
thJA
5 V
100 mA
300 mA
1 A
250 mW
j
100
–25...+85
–25...+85
260
300 K/W
°
C
°
C
°
C
°
C
Document Number 81060
Rev. 2, 29-Jun-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
TSFF5200
g
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 100 mA TK
F
F
VF
R
j
e
e
f
e
80 160 mW/sr
800 1600 mW/sr
f
e
Angle of Half Intensity ϕ ±10 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
Fall Time IF = 100 mA t
Cut–Off Frequency IDC = 70 mA, IAC = 30 mA pp f
l
Dl
p
l
p
r
f
c
1.45 1.6 V
2.5 3.0 V
–2.4 mV/K
10
m
160 pF
40 mW
–0.5 %/K
870 nm
40 nm
0.2 nm/K
10 ns
10 ns
35 MHz
A
Typical Characteristics (T
250
200
150
R
thJA
100
V
50
P – Power Dissipation ( mW )
0
020406080
T
16111
Figure 1. Power Dissipation vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
= 25_C unless otherwise specified)
amb
100
250
200
150
100
R
F
I – Forward Current ( mA )
50
0
020406080
T
16112
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
thJA
100
www.vishay.de • FaxBack +1-408-970-5600
2 (6) Rev. 2, 29-Jun-99
Document Number 81060
Loading...