Telefunken TSDF1220, TSDF1220W, TSDF1220RW, TSDF1220R Datasheet
TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise applications such as preamplifiers, mixers and oscillators in analog and digital TV–systems
(e.g., satellite tuners) up to microwave frequencies.
Features
D
Low power applications
D
Very low noise figure
D
High transition frequency fT = 12 GHz
Vishay Telefunken
21
94 9279
13 579
43
TSDF1220 Marking: F20
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
2
13 653
3
4
TSDF1220W Marking: WF2
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 566
43
TSDF1220R Marking: 20F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
TSDF1220RW Marking: W2F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
21
94 9278
2
34
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
95 10831
13 56613 654
9 V
6 V
2 V
40 mA
200 mW
150
–65 to +150
°
C
°
C
Document Number 85066
Rev. 6, 30-Jun-00
www.vishay.de • FaxBack +1-408-970-5600
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TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Vishay Telefunken
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 12 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA V
DC forward current transfer ratio VCE = 5 V, IC = 20 mA h
Electrical AC Characteristics
3
R
thJA
CES
CBO
EBO
(BR)CEO
CEsat
FE
450 K/W
6 V
0.1 0.5 V
50 100 150
100mA
100 nA
2
m
A
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 20 mA, f = 1 GHz f
Collector-base capacitance VCB = 1 V, f = 1 MHz C
Collector-emitter capacitance VCE = 1 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 5 V, IC = 3 mA,
ZS = Z
, ZL = 50 W, f = 2 GHz
Sopt
Power gain VCE = 5 V, IC = 20 mA,
ZS = Z
Transducer gain VCE = 5 V, IC = 20 mA,
Z
= 50 W, f = 2 GHz
0
Third order intercept point at
VCE = 5 V, IC = 20 mA, f = 2 GHz IP
, ZL = 50 W, f = 2 GHz
Sopt
S
output
T
cb
ce
eb
12 GHz
0.3 pF
0.35 pF
0.5 pF
F 1.2 dB
G
pe
21e
2
3
14 dB
12.5 dB
22 dBm
www.vishay.de • FaxBack +1-408-970-5600
2 (6)
Document Number 85066
Rev. 6, 30-Jun-00
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