Telefunken TSDF1205W, TSDF1205RW, TSDF1205R, TSDF1205 Datasheet
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and small signal low power amplifiers.
This transistor has superior noise figure and
associated gain performance at UHF, VHF and microwave frequencies.
Features
D
Low power applications
D
Very low noise figure
D
High transition frequency fT = 12 GHz
Vishay Telefunken
21
94 9279
13 579
43
TSDF1205 Marking: F05
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
2
13 653
4
3
TSDF1205W Marking: WF0
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 566
43
TSDF1205R Marking: 05F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
TSDF1205RW Marking: W0F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
21
94 9278
2
34
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 132 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
95 10831
13 56613 654
9 V
4 V
2 V
12 mA
40 mW
150
–65 to +150
°
C
°
C
Document Number 85065
Rev. 5, 30-Jun-00
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 12 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA V
DC forward current transfer ratio VCE = 2 V, IC = 2 mA h
Electrical AC Characteristics
3
R
thJA
CES
CBO
EBO
(BR)CEO
CEsat
FE
450 K/W
4 V
0.1 0.5 V
50 120 250
100mA
100 nA
2
m
A
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 2 V, IC = 5 mA, f = 1 GHz f
Collector-base capacitance VCB = 1 V, f = 1 MHz C
Collector-emitter capacitance VCE = 1 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 2 V, IC = 2 mA, ZS = Z
Sopt
,
ZL = 50 W, f = 2 GHz
Power gain VCE = 2 V, IC = 2 mA,
f = 2 GHz (@F
VCE = 2 V, IC = 5 mA, ZS = Z
Z
= 50 W f = 2 GHz
L
Transducer gain VCE = 2 V, IC = 5 mA, Z0 = 50 W,
opt
)
,
Sopt
S
f = 2 GHz
T
cb
ce
eb
12 GHz
0.2 pF
0.35 pF
0.15 pF
F 1.3 dB
G
G
pe
pe
21e
2
13 dB
11.5 dB
12.5 dB
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2 (6)
Document Number 85065
Rev. 5, 30-Jun-00
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