STMicroelectronics L6201, L6201PS, L6202, L6203 Schematics

	L6201
®	L6202 - L6203

DMOS FULL BRIDGE DRIVER

SUPPLY VOLTAGE UP TO 48V

5A MAX PEAK CURRENT (2A max. for L6201) TOTAL RMS CURRENT UP TO

L6201: 1A; L6202: 1.5A; L6203/L6201PS: 4A RDS (ON) 0.3 Ω (typical value at 25 °C) CROSS CONDUCTION PROTECTION

TTL COMPATIBLE DRIVE

OPERATING FREQUENCY UP TO 100 KHz THERMAL SHUTDOWN

INTERNAL LOGIC SUPPLY HIGH EFFICIENCY

DESCRIPTION

The I.C. is a full bridge driver for motor control applications realized in Multipower-BCD technology which combines isolated DMOS power transistors with CMOS and Bipolar circuits on the same chip. By using mixed technology it has been possible to optimize the logic circuitry and the power stage to achieve the best possible performance. The DMOS output transistors can operate at supply voltages up to 42V and efficiently at high switch-

MULTIPOWER BCD TECHNOLOGY

Powerdip 12+3+3

SO20 (12+4+4)

Multiwatt11

PowerSO20

ORDERING NUMBERS:

L6201 (SO20)

L6201PS (PowerSO20)

L6202 (Powerdip18)

L6203 (Multiwatt)

ing speeds. All the logic inputs are TTL, CMOS and μC compatible. Each channel (half-bridge) of the device is controlled by a separate logic input, while a common enable controls both channels. The I.C. is mounted in three different packages.

BLOCK DIAGRAM

July 2003

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L6201 - L6202 - L6203

PIN CONNECTIONS (Top view)

SO20			POWERDIP
GND	1	20	GND
N.C.	2	19	N.C.
N.C.	3	18	N.C.
OUT2	4	17	ENABLE
VS	5	16	SENSE
OUT1	6	15	Vref
BOOT1	7	14	BOOT2
IN1	8	13	IN2
N.C.	9	12	N.C.
GND	10	11	GND
		D95IN216
		PowerSO20
		MULTIWATT11
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						L6201 - L6202 - L6203
PINS FUNCTIONS
	Device				Name	Function
L6201	L6201PS		L6202	L6203
1	16		1	10	SENSE	A resistor Rsense connected to this pin provides feedback for
						motor current control.
2	17		2	11	ENAB	When a logic high is present on this pin the DMOS POWER
					LE	transistors are enabled to be selectively driven by IN1 and IN2.
3	2,3,9,12,		3		N.C.	Not Connected
	18,19
4,5	–		4		GND	Common Ground Terminal
–	1, 10		5	6	GND	Common Ground Terminal
6,7	–		6		GND	Common Ground Terminal
8	–		7		N.C.	Not Connected
9	4		8	1	OUT2	Ouput of 2nd Half Bridge
10	5		9	2	Vs	Supply Voltage
11	6		10	3	OUT1	Output of first Half Bridge
12	7		11	4	BOOT1	A boostrap capacitor connected to this pin ensures efficient
						driving of the upper POWER DMOS transistor.
13	8		12	5	IN1	Digital Input from the Motor Controller
14,15	–		13		GND	Common Ground Terminal
–	11, 20		14	6	GND	Common Ground Terminal
16,17	–		15		GND	Common Ground Terminal
18	13		16	7	IN2	Digital Input from the Motor Controller
19	14		17	8	BOOT2	A boostrap capacitor connected to this pin ensures efficient
						driving of the upper POWER DMOS transistor.
20	15		18	9	Vref	Internal voltage reference. A capacitor from this pin to GND is
						recommended. The internal Ref. Voltage can source out a
						current of 2mA max.

ABSOLUTE MAXIMUM RATINGS

Symbol		Parameter	Value	Unit
Vs	Power Supply		52	V
VOD	Differential Output Voltage (between Out1 and Out2)		60	V
VIN, VEN	Input or Enable Voltage		– 0.3 to + 7	V
Io	Pulsed Output Current	for L6201PS/L6202/L6203 (Note 1)	5	A
	– Non Repetitive (< 1 ms) for L6201		5	A
		for L6201PS/L6202/L6203	10	A
	DC Output Current	for L6201 (Note 1)	1	A
Vsense	Sensing Voltage		– 1 to + 4	V
Vb	Boostrap Peak Voltage		60	V
Ptot	Total Power Dissipation:
	Tpins = 90°C for L6201		4	W
	for L6202		5	W
	Tcase = 90°C for L6201PS/L6203		20	W
	Tamb = 70°C for L6201 (Note 2)		0.9	W
	for L6202 (Note 2)		1.3	W
	for L6201PS/L6203 (Note 2)		2.3	W
Tstg, Tj	Storage and Junction Temperature		– 40 to + 150	°C

Note 1: Pulse width limited only by junction temperature and transient thermal impedance (see thermal characteristics) Note 2: Mounted on board with minimized dissipating copper area.

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THERMAL DATA

Symbol	Parameter			Value			Unit
			L6201	L6201PS	L6202	L6203
Rth j-pins	Thermal Resistance Junction-pins	max	15	–	12	–	°C/W
Rth j-case	Thermal Resistance Junction Case	max.	–	–	–	3
Rth j-amb	Thermal Resistance Junction-ambient	max.	85	13 (*)	60	35

(*) Mounted on aluminium substrate.

ELECTRICAL CHARACTERISTICS (Refer to the Test Circuits; Tj = 25°C, VS = 42V, Vsens = 0, unless otherwise specified).

Symbol		Parameter		Test Conditions				Min.	Typ.	Max.	Unit
Vs		Supply Voltage						12	36	48	V
Vref		Reference Voltage	IREF = 2mA						13.5		V
IREF		Output Current								2	mA
Is		Quiescent Supply Current	EN = H VIN = L						10	15	mA
			EN = H VIN = H			IL = 0			10	15	mA
			EN = L ( Fig. 1,2,3)						8	15	mA
fc		Commutation Frequency (*)							30	100	KHz
Tj		Thermal Shutdown							150		°C
Td		Dead Time Protection							100		ns
TRANSISTORS
OFF
IDSS		Leakage Current	Fig. 11 Vs = 52 V							1	mA
ON
RDS		On Resistance	Fig. 4,5						0.3	0.55	Ω
VDS(ON)		Drain Source Voltage	Fig. 9				L6201
			IDS = 1A						0.3		V
			IDS = 1.2A				L6202		0.36		V
			IDS = 3A			L6201PS/0			0.9		V
							3
Vsens		Sensing Voltage						– 1		4	V
SOURCE DRAIN DIODE
Vsd		Forward ON Voltage	Fig. 6a and b
			ISD = 1A		L6201	EN = L			0.9 (**)		V
			ISD = 1.2A		L6202	EN = L			0.9 (**)		V
			ISD = 3A		L6201PS/03		EN =		1.35(**)		V
			L
trr		Reverse Recovery Time	dif = 25 A/μs						300		ns
			dt
			IF = 1A			L6201
			IF = 1.2A			L6202
			IF = 3A			L6203
tfr		Forward Recovery Time							200		ns
LOGIC LEVELS
VIN L,	VEN L	Input Low Voltage						– 0.3		0.8	V
VIN H,	VEN H	Input High Voltage						2		7	V
IIN L,	IEN L	Input Low Current	VIN,	VEN = L						–10	μA
IIN H,	IEN H	Input High Current	VIN,	VEN = H					30		μA

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ELECTRICAL CHARACTERISTICS (Continued)

LOGIC CONTROL TO POWER DRIVE TIMING

Symbol		Parameter		Test Conditions	Min.	Typ.	Max.	Unit
t1 (Vi)		Source Current Turn-off Delay	Fig. 12			300		ns
t2 (Vi)		Source Current Fall Time	Fig. 12			200		ns
t3 (Vi)		Source Current Turn-on Delay	Fig. 12			400		ns
t4 (Vi)		Source Current Rise Time	Fig. 12			200		ns
t5	(Vi)	Sink Current Turn-off Delay	Fig. 13			300		ns
t6	(Vi)	Sink Current Fall Time	Fig. 13			200		ns
t7	(Vi)	Sink Current Turn-on Delay	Fig. 13			400		ns
t8	(Vi)	Sink Current Rise Time	Fig. 13			200		ns

(*) Limited by power dissipation

(**) In synchronous rectification the drain-source voltage drop VDS is shown in fig. 4 (L6202/03); typical value for the L6201 is of 0.3V.

Figure 1: Typical Normalized IS vs. Tj

Figure 3: Typical Normalized IS vs. VS

Figure 2: Typical Normalized Quiescent Current

vs. Frequency

Figure 4: Typical RDS (ON) vs. VS ~ Vref

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Figure 5: Normalized RDS (ON)at 25°C vs. Temperature Typical Values

Figure 6a: Typical Diode Behaviour in Synchronous Rectification (L6201)

Figure 6b: Typical Diode Behaviour in Synchronous Rectification (L6201PS/02/03)

Figure 7a: Typical Power Dissipation vs IL (L6201)

Figure 7b: Typical Power Dissipation vs IL

(L6201PS, L6202, L6203))

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Figure 8a: Two Phase Chopping

Figure 8b: One Phase Chopping

IN1 = H

IN 2 = H

EN = H

Figure 8c: Enable Chopping

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