ST X00619 User Manual
Features
■ I
■ V
■ I
= 0.8 A
T(RMS)
, V
DRM
= 30 to 200 µA
GT
RRM
X00619
0.8 A sensitive gate SCR
Datasheet − production data
A
= 600 V
G
K
Applications
■ Limited gate current topologies
■ Ground fault circuit interrupters
■ Overvoltage crowbar protection in power
supplies
■ Protection in electronic ballasts
■ Capacitive discharge ignitions
■ Ignitors (lighting, oven...)
Description
The X006 SCR can be used as on/off function in
applications where topology does not offer high
current for gate triggering.
This device is optimized in forward voltage drop
and inrush current capabilities for reduced power
losses and high reliability in harsh environments.
A
K
G
A
TO-92
X00619-MA
Table 1. Device summary
I
T(RMS)
V
/ V
DRM
RRM
I
GT
A
K
SOT-223
X00619MN
0.8 A
600 V
30 to 200 µA
G
May 2012 Doc ID 15755 Rev 2 1/10
This is information on a product in full production.
www.st.com
10
Characteristics X00619
1 Characteristics
Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise specified)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (180 °Conduction angle)
SOT-223 T
TO-92 T
TO-92 T
IT
Average on-state current (180 °Conduction angle)
(AV)
SOT-223 T
tp = 8.3 ms
I
TSM
di/dt
I
P
G(AV)
T
Table 3. Electrical characteristics (Tj = 25 °C unless otherwise specified)
Non repetitive surge peak on-state current
= 10 ms 9
t
p
²
tI²t Value for fusing tp = 10 ms Tj = 25 °C 0.4 A2s
I
Critical rate of rise of on-state current
I
= 2 x IGT, tr ≤ 100 ns
G
Peak gate current tp = 20 µs Tj = 125 °C 1 A
GM
F = 60 Hz T
Average gate power dissipation Tj = 125 °C 0.1 W
Storage junction temperature range
stg
T
Operating junction temperature range
j
= 83 °C
L
= 107 °C
c
= 83 °C
L
= 107 °C
c
0.8 A
0.5 A
10
Tj = 25 °C
= 125 °C 50 A/µs
j
- 40 to + 150
- 40 to + 125
Symbol Test conditions Value Unit
A
°C
I
GT
VD = 12 V, RL = 140 Ω
200
MAX.
MIN. 30
V
GT
V
V
dV/dt V
Table 4. Static electrical characteristics
VD = V
GD
RGIRG
I
H
I
L
DRM, RL
= 10 µA MIN. 5 V
IT = 50 mA, RGK = 1 kΩ MAX. 5 mA
IG = 1 mA, RGK = 1 kΩ MAX. 6 mA
= 67% V
D
= 3.3 kΩ, RGK = 1 kΩ Tj = 125 °C MIN. 0.2 V
DRM, RGK
= 1 kΩ Tj = 125 °C MIN. 40 V/µs
0.8 V
Symbol Test conditions Value Unit
V
TM
V
TO
R
ITM = 1 A, tp = 380 µs Tj = 25 °C
Threshold voltage
= 125 °C
T
Dynamic resistance 245 mΩ
d
j
MAX
1.35 V
0.85 V
Tj = 25 °C 1 µA
I
DRM IRRMVDRM
= V
RRM, RGK
= 1 kΩ
= 125 °C 100
T
j
µA
µA
2/10 Doc ID 15755 Rev 2
X00619 Characteristics
Table 5. Thermal resistances
Symbol Parameter Value Unit
R
R
th(j-l)
th(j-c)
Junction to leads (DC) TO-92
70
Junction to case (DC) SOT-223 30
Max.
TO-92 150
R
th(j-a)
Figure 1. Maximum average power
Junction to ambient (DC)
dissipation versus average
S = 5 cm
2
SOT-223 60
Figure 2. Average and DC on-state current
versus case temperature (SOT-223)
on-state current
P(W)
0.6
α = 30°, 60°, 90°, 120°,180°, DC
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
°°° °
°DC
I (A)
T(AV)
360°
α
Figure 3. Average and DC on-state current
versus lead temperature (TO-92)
I (A)
T(AV)
1.0
SOT-223
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125
α = 30°, 60°, 90°, 120°,180°, DC
T (°C)
l
Figure 4. Average and DC on-state current
versus ambient temperature (free
air convection)
1.0
0.8
I (A)
T(AV)
TO- 92
α = 30°, 60°, 90°, 120°,180°, DC
1.0
0.8
I (A)
T(AV)
DC
SOT-223
= 5 cm²
S
CU
°C/W
0.6
0.4
0.2
T (°C)
0.0
0 25 50 75 100 125
l
Doc ID 15755 Rev 2 3/10
0.6
0.4
0.2
0.0
0 25 50 75 100 125
α = 180°
T (°C)
amb
TO- 92
S
CU
= 0.5 cm²
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