ST X00619 User Manual

Features

■ I

■ V

■ I

= 0.8 A

T(RMS)

, V

DRM

= 30 to 200 µA

GT

RRM

X00619

0.8 A sensitive gate SCR

Datasheet − production data

A

= 600 V

G

K

Applications

■ Limited gate current topologies

■ Ground fault circuit interrupters

■ Overvoltage crowbar protection in power

supplies

■ Protection in electronic ballasts

■ Capacitive discharge ignitions

■ Ignitors (lighting, oven...)

Description

The X006 SCR can be used as on/off function in applications where topology does not offer high current for gate triggering.

This device is optimized in forward voltage drop and inrush current capabilities for reduced power losses and high reliability in harsh environments.

A

K

G

A

TO-92

X00619-MA

Table 1. Device summary

I

T(RMS)

V

/ V

DRM

RRM

I

GT

A

K

SOT-223

X00619MN

0.8 A

600 V

30 to 200 µA

G

May 2012 Doc ID 15755 Rev 2 1/10

This is information on a product in full production.

www.st.com

10

Characteristics X00619

1 Characteristics

Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise specified)

Symbol Parameter Value Unit

I

T(RMS)

On-state rms current (180 °Conduction angle)

SOT-223 T

TO-92 T

IT

Average on-state current (180 °Conduction angle)

(AV)

SOT-223 T

tp = 8.3 ms

I

TSM

di/dt

I

P

G(AV)

T

Table 3. Electrical characteristics (Tj = 25 °C unless otherwise specified)

Non repetitive surge peak on-state current

= 10 ms 9

t

p

²

tI²t Value for fusing tp = 10 ms Tj = 25 °C 0.4 A2s

I

Critical rate of rise of on-state current I

= 2 x IGT, tr ≤ 100 ns

G

Peak gate current tp = 20 µs Tj = 125 °C 1 A

GM

F = 60 Hz T

Average gate power dissipation Tj = 125 °C 0.1 W

Storage junction temperature range

stg

T

Operating junction temperature range

j

= 83 °C

L

= 107 °C

c

= 83 °C

L

= 107 °C

c

0.8 A

0.5 A

10

Tj = 25 °C

= 125 °C 50 A/µs

j

- 40 to + 150

- 40 to + 125

Symbol Test conditions Value Unit

A

°C

I

GT

VD = 12 V, RL = 140 Ω

200

MAX.

MIN. 30

V

GT

V

dV/dt V

Table 4. Static electrical characteristics

VD = V

GD

RGIRG

I

H

I

L

DRM, RL

= 10 µA MIN. 5 V

IT = 50 mA, RGK = 1 kΩ MAX. 5 mA

IG = 1 mA, RGK = 1 kΩ MAX. 6 mA

= 67% V

D

= 3.3 kΩ, RGK = 1 kΩ Tj = 125 °C MIN. 0.2 V

DRM, RGK

= 1 kΩ Tj = 125 °C MIN. 40 V/µs

0.8 V

Symbol Test conditions Value Unit

V

TM

V

TO

R

ITM = 1 A, tp = 380 µs Tj = 25 °C

Threshold voltage

= 125 °C

T

Dynamic resistance 245 mΩ

d

j

MAX

1.35 V

0.85 V

Tj = 25 °C 1 µA

I

DRM IRRMVDRM

= V

RRM, RGK

= 1 kΩ

= 125 °C 100

T

j

µA

2/10 Doc ID 15755 Rev 2

X00619 Characteristics

Table 5. Thermal resistances

Symbol Parameter Value Unit

R

th(j-l)

th(j-c)

Junction to leads (DC) TO-92

70

Junction to case (DC) SOT-223 30

Max.

TO-92 150

R

th(j-a)

Figure 1. Maximum average power

Junction to ambient (DC)

dissipation versus average

S = 5 cm

2

SOT-223 60

Figure 2. Average and DC on-state current

versus case temperature (SOT-223)

on-state current

P(W)

0.6

α = 30°, 60°, 90°, 120°,180°, DC

0.4

0.2

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6

°°° °

°DC

I (A)

T(AV)

360°

α

Figure 3. Average and DC on-state current

versus lead temperature (TO-92)

I (A)

T(AV)

1.0

SOT-223

0.8

0.6

0.4

0.2

0.0 0 25 50 75 100 125

α = 30°, 60°, 90°, 120°,180°, DC

T (°C)

l

Figure 4. Average and DC on-state current

versus ambient temperature (free air convection)

1.0

0.8

I (A)

T(AV)

TO- 92

α = 30°, 60°, 90°, 120°,180°, DC

1.0

0.8

I (A)

T(AV)

DC

SOT-223

= 5 cm²

S

CU

°C/W

0.6

0.4

0.2

T (°C)

0.0 0 25 50 75 100 125

l

Doc ID 15755 Rev 2 3/10

0.6

0.4

0.2

0.0 0 25 50 75 100 125

α = 180°

T (°C)

amb

TO- 92 S

CU

= 0.5 cm²