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STPS20L45C
Datasheet (ST)
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Datasheet STPS20L45C Datasheet (ST)

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STPS20L45C

Low drop power Schottky rectifier

Main product characteristics
I
F(AV)
V
RRM
T
(max) 150° C
j
(max) 0.5 V
V
F
2 x 10 A
45 V
Features and benefits
■ Low forward voltage drop meaning very small
■ Low switching losses allowing high frequency
operation
■ Insulated package: TO-220FPAB
Insulating voltage = 2000 V DC Capacitance = 12 pF
■ Avalanche capability specified
Description
Dual center tap Schottky rectifiers designed for high frequency switched mode power supplies and DC to DC converters.
A1
A2
A1
TO-220FPAB
STPS20L45CFP
A2
K
STPS20L45CT
K
A2
A1
2
D
PA K
STPS20L45CG
K
TO-220AB
A1
A2
K
These devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
March 2007 Rev 4 1/9
www.st.com
9
Characteristics STPS20L45C
d
-

1 Characteristics

Table 1. Absolute Ratings (limiting values)

Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
I
P
T
Repetitive peak reverse voltage 45 V
RRM
RMS forward voltage 30 A
T
2
Average forward current
Surge non repetitive forward current tp = 10 ms Sinusoidal 180 A
FSM
Peak repetitive reverse current tp = 2 µs square F = 1 kHz 1 A
RRM
Non repetitive peak reverse current tp = 100 µs square 2 A
RSM
Repetitive peak avalanche power tp = 1 µs Tj = 25°C 4000 W
ARM
Storage temperature range -65 to + 150 °C
stg
Maximum operating junction temperature
T
j
TO-220AB / D
TO-220FPAB
PA K
=135° C
c
δ = 0.5
= 115° C
T
c
δ = 0.5
(1)
Per diode Per device
Per diode Per device
10 20
10 20
150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Ptot
--------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
1
--------------------------
<
Rth j a–()

Table 2. Thermal resistances

Symbol Parameter Value Unit
R
R
th(j-c)
th(j-c)
Junction to case TO-220FPAB
Junction to case TO-220AB / D2PA K
Per diode
To ta l
Coupling
Per diode
To ta l
Coupling
4.5
3.5
2.5
2.2
1.3
0.3
°C/W
°C/W
A
A
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
I
V
1. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(1)
Forward voltage drop
F
(Per diode) + P(diode 2) x R
th(j-c)
= 25° C
T
j
= 125° C 65 130 mA
T
j
Tj = 25° C IF = 10 A 0.55
= 125° C IF = 10 A 0.44 0.5
T
j
= 25° C IF = 20 A 0.73
T
j
= 125° C IF = 20 A 0.62 0.72
T
j
To evaluate the conduction losses use the following equation: P = 0.28 x I
2/9
F(AV)
+ 0.022 I
F2(RMS)
.
th(c)
V
= V
R
RRM
0.2 mA
V
STPS20L45C Characteristics
Figure 1. Average forward power
dissipation versus average forward current (per diode)
P (W)
F(AV)
8
7
6
5
4
3
2
1
0
02468101214
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ = 1
δ
=tp/T
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 5. Non repetitive surge peak forward
current versus overload duration (maximum values, per diode, TO-220AB, D
2
PAK )
Figure 2. Average forward current versus
ambient temperature (
δ = 0.5, per diode)
I (A)
F(AV)
12
11
10
9
8
7
6
5
4
3
2
1
=tp/T
δ
0
0 25 50 75 100 125 150
R =15°C/W
th(j-a)
T
tp
R=R
T (°C)
amb
th(j-a) th(j-c)
TO-220AB / TO-247
TO-220FPAB
Figure 4. Normalized avalanche power
derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 6. Non repetitive surge peak forward
current versus overload duration (maximum values, per diode, TO-220FPAB)
I (A)
M
140
120
100
80
60
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
T =25°C
C
T =75°C
C
T =125°C
C
I (A)
M
100
90
80
70
60
50
40
30
IM
20
10
0 1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
T =25°C
j
T =50°C
C
T =100°C
C
3/9
Characteristics STPS20L45C
Figure 7. Relative variation of thermal
impedance junction to case versus
δ
=tp/T
2
T
PAK)
tp
pulse duration (TO-220AB, D
Z/R
th(j-c) th(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0 1E-3 1E-2 1E-1 1E+0
t (s)
p
Figure 9. Reverse leakage current versus
reverse voltage applied (typical values, per diode)
I (mA)
R
2E+2 1E+2
1E+1
1E+0
T =150°C
j
T =125°C
j
T =75°C
j
Figure 8. Relative variation of thermal
impedance junction to case versus pulse duration ( TO-220FPAB)
Z/R
th(j-c) th(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0 1E-3 1E-2 1E-1 1E+ 0 1E+ 1
t (s)
p
δ
=tp/T
T
tp
Figure 10. Junction capacitance versus
reverse voltage applied (typical values, per diode)
C(pF)
2000
1000
F=1MHz
V =30mV
OSC RMS
T =25°C
j
1E-1
1E-2
1E-3
0 5 10 15 20 25 30 35 40 45
T =25°C
j
V (V)
R
Figure 11. Forward voltage drop versus
forward current (maximum values, per diode)
I (A)
FM
100.0
10.0
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T =125°C
j
T =150°C
j
(typical values)
T =75°C
j
T =25°C
j
V (V)
FM
V (V)
100
12 51020 50
R
Figure 12. Thermal resistance junction to
ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm)( D
R (°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40
2
PAK )
S(Cu)(cm²)
4/9
STPS20L45C Package information

2 Package information

● Epoxy meets UL94, V0
● Cooling method: by conduction (C)
● Recommended torque value: 0.55 Nm
● Maximum torque value: 0.70 Nm

Table 4. TO-220FPAB dimensions

Dimensions
Ref
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
A
H
B
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
Dia
L6
L2
L3
L5
F1
L4
F2
D
L7
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
G1
F
E
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
G
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
5/9
Package information STPS20L45C

Table 5. TO-220AB dimensions

Dimensions
L2
F2
F1
F
G1
H2
Dia
Ref
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C
A
C
1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
L5
L6
L7
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
L9
L4
G
D
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ.
M
E
L4 13 14 0.511 0.551
0.645 typ.
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
6/9
Diam. 3.75 3.85 0.147 0.151
STPS20L45C Package information
m
D
Table 6. D
L2
L
L3
2
PAK dimensions
E
A1
B2
B
G
* FLAT ZONE NO LESS THAN 2m
Dimensions
Ref
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A
C2
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C
R
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
A2
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
M
*
V2
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°

Figure 13. Footprint (dimensions in millimeters)

16.90
10.30
8.90
3.70
5.08
1.30
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
7/9
Ordering Information STPS20L45C

3 Ordering Information

Ordering type Marking Package Weight Base qty
Delivery
mode
STPS20L45CFP STPS20L45CFP TO-220FPAB 2 g 50 Tube
STPS20L45CT STPS20L45CT TO-220AB 2 g 50 Tube
2
STPS20L45CG STPS20L45CG D
STPS20L45CG-TR STPS20L45CG D
PAK 1.48 g 50 Tube
2
PAK 1.48 g 1000 Tape & Reel

4 Revision history

Date Revision Description of Changes
Jul_2003 3C Last release.
22-Mar-2007 4 Removed ISOWATT and TO-247 packages.
8/9
STPS20L45C
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