®
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
STPS20L15D/G
I
F(AV)
V
RRM
20 A
15 V
Tj (max) 125°C
V
(max) 0.33 V
F
FEATURES AND BENEFITS
VERY LOW FORWARD VOLTAGE DROP FOR
n
K
K
LESS POWER DISSIPATION AND REDUCED
HEATSINK SIZE
REVERSEVOLTAGESUITEDTOOR-ingOF 3V,
n
5V and 12V RAILS
AVALANCHE CAPABILITY SPECIFIED
n
DESCRIPTION
Packaged in TO-220AC or D
2
PAK, this device is
especially intended for use as an OR-ing diode in
TO-220AC
STPS20L15D
A
K
2
D
PAK
STPS20L15G
A
NC
fault tolerant power supply equipments.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Repetitive peak reverse voltage 15 V
RMS forward current 30 A
Average forward current Tc = 115°C δ = 1 20 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 310 A
Repetitive peak reverse current tp=2µs F=1kHz 2 A
Non repetitive peak reverse current tp = 100 µs 3 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 13500 W
Storage temperature range - 65 to + 150 °C
Tj Maximum operating junction temperature * 125 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
*:
<
dTj Rth j a
thermal runaway condition for a diode on its own heatsink
−1()
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
July 2003 - Ed: 3B
Junction to case 1.6 °C/W
1/5
STPS20L15D/G
STATIC ELECTRICAL CHARACTERISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
I
* Reverse leakage
R
current
V
* Forward voltage drop Tj = 25°CI
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.18xI
F(AV)
+ 8.10-3xI
F2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
8
7
δ = 0.05
6
5
4
3
2
1
0
0 2 4 6 8 10121416182022
δ = 0.1
δ = 0.2
IF(av) (A)
Tj=25°CV
Tj = 100°CV
Tj=25°CI
Tj = 125°CI
Tj = 125°CI
Fig. 2: Average forward current versus ambient
temperature ( δ = 1).
22
δ = 0.5
δ
=tp/T
δ = 1
T
tp
20
18
16
14
12
10
= 15V 6 mA
R
= 15V 200 500
R
= 19 A 0.41 V
F
= 40 A 0.52
F
= 19 A 0.28 0.33
F
= 40 A 0.42 0.50
F
IF(av)(A)
Rth(j-a)=Rth(j-c)
Rth(j-a)=35°C/W
Rth(j-a)=15°C/W
8
6
T
4
2
=tp/T
δ
0
0 25 50 75 100 125
tp
Tamb(°C)
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
250
200
150
100
IM
50
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
2/5
Tc=50°C
Tc=75°C
Tc=110°C
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0
1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0
Single pulse
tp (s)
δ
=tp/T
T
tp
STPS20L15D/G
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
IR(mA)
5E+2
1E+2
Tj=100°C
1E+1
1E+0
1E-1
0246810121416
Tj=25°C
VR(V)
Fig. 9: Forward voltage drop versus forward
current (typical values).
IFM(A)
200.0
100.0
Tj=125°C
10.0
1.0
Tj=75°C
Tj=25°C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
C(nF)
5.0
1.0
VR(V)
0.1
12 51020
F=1MHz
Tj=25°C
Fig. 10: Forward voltage drop versus forward
current (maximum values).
IFM(A)
200
Tj=100°C
100
10
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VFM(V)
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness : 35 µm).
(STPS20L15G only)
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0 4 8 1216202428323640
S(Cu) (cm²)
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VFM(V)
3/5
STPS20L15D/G
PACKAGE MECHANICAL DATA
2
PAK
D
E
L2
L
L3
B2
B
G
* FLAT ZONE NO LESS THAN 2mm
C2
A1
M
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
D
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
C
R
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
A2
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
*
V2
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°
FOOT PRINT DIMENSIONS (in millimeters)
16.90
10.30
1.30
3.70
8.90
5.08
4/5
PACKAGE MECHANICAL DATA
TO-220AC
H2
L5
Ø I
L6
L2
L9
F1
L4
F
G
STPS20L15D/G
DIMENSIONS
REF.
A
C
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
L7
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
L4 13.00 14.00 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
Millimeters Inches
Min. Max. Min. Max.
Ordering type Marking Package Weight Base qty Delivery mode
STPS20L15D STPS20L15D TO-220AC 1.86 g. 50 Tube
2
STPS20L15G STPS20L15G D
STPS20L15G-TR STPS20L15G D
n
Cooling method: by conduction (C)
n
Recommended torque value: 0.55 m.N
n
Maximum torque value: 0.7 m.N
n
Epoxy meets UL94,V0
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useof such information nor for any infringement of patents or otherrights of third parties which mayresult from its use. No licenseis granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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PAK 1.48g. 50 Tube
2
PAK 1.48 g. 1000 Tape and reel
http://www.st.com
5/5
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