ST STPS20L15D, STPS20L15G User Manual

®

LOW DROP OR-ing POWER SCHOTTKY DIODE

MAIN PRODUCT CHARACTERISTICS

STPS20L15D/G

I

F(AV)

V

RRM

20 A
15 V

Tj (max) 125°C

V

(max) 0.33 V

F

FEATURES AND BENEFITS

VERY LOW FORWARD VOLTAGE DROP FOR

n

K

K

LESS POWER DISSIPATION AND REDUCED
HEATSINK SIZE

REVERSEVOLTAGESUITEDTOOR-ingOF 3V,

n

5V and 12V RAILS
AVALANCHE CAPABILITY SPECIFIED

n

DESCRIPTION

Packaged in TO-220AC or D

2

PAK, this device is

especially intended for use as an OR-ing diode in

TO-220AC

STPS20L15D

A

K

2

D

PAK

STPS20L15G

A

NC

fault tolerant power supply equipments.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

stg

Repetitive peak reverse voltage 15 V
RMS forward current 30 A
Average forward current Tc = 115°C δ = 1 20 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 310 A
Repetitive peak reverse current tp=2µs F=1kHz 2 A
Non repetitive peak reverse current tp = 100 µs 3 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 13500 W
Storage temperature range - 65 to + 150 °C

Tj Maximum operating junction temperature * 125 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

*:

<

dTj Rth j a

thermal runaway condition for a diode on its own heatsink

−1()

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

July 2003 - Ed: 3B

Junction to case 1.6 °C/W

1/5

STPS20L15D/G

STATIC ELECTRICAL CHARACTERISTICS

Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit

I

* Reverse leakage

R

current

V

* Forward voltage drop Tj = 25°CI

F

Pulse test : * tp = 380 µs, δ <2%

To evaluate the maximum conduction losses use the following equation :
P=0.18xI

F(AV)

+ 8.10-3xI

F2(RMS)

Fig. 1: Average forward power dissipation versus
average forward current.

PF(av)(W)

8
7

δ = 0.05

6
5
4
3
2
1
0

0 2 4 6 8 10121416182022

δ = 0.1

δ = 0.2

IF(av) (A)

Tj=25°CV
Tj = 100°CV

Tj=25°CI
Tj = 125°CI
Tj = 125°CI

Fig. 2: Average forward current versus ambient
temperature ( δ = 1).

22

δ = 0.5

δ

=tp/T

δ = 1

T

tp

20
18
16
14
12
10

= 15V 6 mA

R

= 15V 200 500

R

= 19 A 0.41 V

F

= 40 A 0.52

F

= 19 A 0.28 0.33

F

= 40 A 0.42 0.50

F

IF(av)(A)

Rth(j-a)=Rth(j-c)

Rth(j-a)=35°C/W

Rth(j-a)=15°C/W

8
6

T

4
2

=tp/T

δ

0

0 25 50 75 100 125

tp

Tamb(°C)

Fig. 3: Normalized avalanche power derating

versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).

IM(A)

250

200

150

100

IM

50

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

2/5

Tc=50°C

Tc=75°C

Tc=110°C

Fig. 4: Normalized avalanche power derating
versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2
1

0.8

0.6

0.4

0.2
0

0 25 50 75 100 125 150

T (°C)

j

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

0.4

δ = 0.2

δ = 0.1

0.2

0.0

1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0

Single pulse

tp (s)

δ

=tp/T

T

tp