Datasheet ST1S30 Datasheet (ST)

3 A, 1.5 MHz PWM step-down switching regulator

Features

■ 1.5 MHz fixed frequency PWM with current

control mode

■ 3 A output current capability

■ Typical efficiency: > 90%

■ 2 % DC output voltage tolerance

■ Two versions available: power good or inhibit

■ Integrated output over-voltage protection

■ Non switching quiescent current: (typ) 1.5 mA

over temperature range

■ R

■ Utilizes tiny capacitors and inductors

■ Operating junction temp. -25 °C to 125 °C

■ Available in DFN8 (4 x 4 mm) exposed pad

Description

The ST1S30 is a step-down DC-DC converter
optimized for powering low output voltage
applications. It supplies a current in excess of 3 A
over an input voltage range from 2.7 V to 6 V.

A high PWM switching frequency (1.5 MHz)
allows the use of tiny surface-mount components.

(typ) 100 mΩ

DSon

ST1S30

with synchronous rectification

DFN8 (4 x 4 mm)

Moreover, since the required synchronous
rectifier is integrated, the number of the external
components is reduced to minimum: a resistor
divider, an inductor and two capacitors. The
Power Good function continuously monitors the
output voltage. An open drain Power Good flag is
released when the output voltage is within
regulation. In addition, a low output ripple is
guaranteed by the current mode PWM topology
and by the use of low ESR SMD ceramic
capacitors. The device is thermally protected and
the output current limited to prevent damages due
to accidental short circuit. The ST1S30 is
available in the DFN8 (4 x 4 mm) package.

Table 1. Device summary

Order codes Package Note

ST1S30PUR

ST1S30IPUR INHIBIT version

1. Available on request.

September 2010 Doc ID 17927 Rev 1 1/11

(1)

DFN8 (4 x 4 mm)

PG version

www.st.com

11

Contents ST1S30

Contents

1 Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

5 Typical application circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

2/11 Doc ID 17927 Rev 1

ST1S30 Diagram

1 Diagram

Figure 1. Schematic diagram

(*) Only for ST1S30I

(**) Only for ST1S30

Doc ID 17927 Rev 1 3/11

Pin configuration ST1S30

2 Pin configuration

Figure 2. Pin connections (top view)

ST1S30PUR

ST1S30IPUR

Table 2. Pin description

Pin n° Symbol Name and function

1 FB Feedback voltage

2 GND System ground

3 SW Switching pin

6V

IN_SW

7V

8 INH/PG Inhibit (INH) for ST1S30IPUR or Power Good (PG) for ST1S30PUR

Exposed pad GND

4, 5 NC Not internally connected. Can be connected to GND or left floating

Power supply for the MOSFET switch

Power supply for analog circuit

IN_A

To be connected to PCB ground plane for optimal electrical and thermal
performance

!-V

4/11 Doc ID 17927 Rev 1

ST1S30 Maximum ratings

3 Maximum ratings

Table 3. Absolute maximum ratings

Symbol Parameter Value Unit

V

IN_SW

V

V

IN_A

INH

Positive power supply voltage -0.3 to 7 V

Positive power supply voltage -0.3 to 7 V

Inhibit voltage (I version) -0.3 to VI + 0.3 V

SWITCH voltage Max. voltage of output pin -0.3 to 7 V

V

FB

Feedback voltage -0.3 to 3 V

PG Power Good open drain -0.3 to 7 V

T

T

T

J

STG

LEAD

Max junction temperature -40 to 150 °C

Storage temperature range -65 to 150 °C

Lead temperature (soldering) 10 sec 260 °C

Note: Absolute maximum ratings are those values beyond which damage to the device may occur.

Functional operation under these conditions is not implied.

Table 4. Thermal data

Symbol Parameter Value Unit

R

thJC

R

thJA

Thermal resistance junction-case 10 °C/W

Thermal resistance junction-ambient 40 °C/W

Table 5. ESD performance

Symbol Parameter Test conditions Value Unit

ESD ESD protection voltage HBM 2 kV

ESD ESD protection voltage MM 500 V

Doc ID 17927 Rev 1 5/11

Electrical characteristics ST1S30

4 Electrical characteristics

Refer to Figure 3 application circuit V
C

= 22 µF, L1 = 2.2 µH, TJ = -25 to 125 °C (unless otherwise specified. Typical values are

2

IN_SW

= V

= 5 V, VO = 1.2 V, C1 = 10 µF,

IN_A

referred to 25 °C)

Table 6. Electrical characteristics for ST1S30

Symbol Parameter Test conditions Min. Typ. Max. Unit

FB Feedback voltage 784 800 816 mV

I

FB

V

UV

OVP

I

OVP

I

Q

I

O

%VO/ΔVIOutput line regulation VI = 2.7 V to 5.5 V, IO = 100 mA

%VO/ΔIOOutput load regulation IO = 10 mA to 3 A

VFB pin bias current 600 nA

Input voltage IO = 10 mA to 3 A 2.7 5.5 V

I

Rising 2.3 V

V

Under voltage lock out

LO

threshold

Overvoltage protection
threshold

Overvoltage protection
hysteresis

I

Hysteresis 150 mV

V

rising 1.05 VO1.1 V

O

falling 5 %

V

O

O

Overvoltage clamping current VO = 1.2 V 300 mA

V

> 1.2 V, not switching 1.5 2.5

Quiescent current

Output current VI = 2.7 to 5.5 V

INH

< 0.0 V, T = - 30 °C to 85 °C 1

V

INH

(1)

(1)

3A

(1)

0.16

0.2 %

mA

%V

ΔV

V

/

O

I

PWMf

D

MAX

PWM switching frequency VFB = 0.65 V 1.2 1.5 1.8 MHz

S

Maximum duty cycle 80 87 %

Power good output threshold 0.92 V

PG

Power good output voltage low I

-N NMOS switch on resistance ISW = 750 mA 0.1 Ω

R

DSON

-P PMOS switch on resistance ISW = 750 mA 0.1 Ω

R

DSON

I

SWL

T

SHDN

T

ν

HYS

Switching current limitation

Efficiency

(1)

Thermal shutdown 150 °C

Thermal shutdown hysteresis 20 °C

%VO/ΔIOLoad transient response

%VO/ΔIOShort circuit removal response

1. Guaranteed by design, but not tested in production.

= 6 mA open drain output 0.4 V

SINK

(1)

IO = 10 mA to 100 mA, VO = 3.3 V 65

= 100 mA to 3 A, VO = 3.3 V 85

I

O

= 100 mA to 1 A, TA = 25 °C

I

O

= tF ≥ 200 ns

t

R

= 10 mA to IO = short,

I

O

TA = 25 °C

(1)

(1)

6/11 Doc ID 17927 Rev 1

O

3.7 4.4 5.1 A

%

-10 +10 %V

-10 +10 %V

V

O

O

ST1S30 Electrical characteristics

Refer to Figure 4 application circuit V
= 22, C3 = 1 µF, L1 = 2.2 µH, T

= -25 to 125 °C (unless otherwise specified. Typical values

J

IN_SW

= V

IN_A

= V

= 5 V, VO = 1.2 V, C1 = 10 µF, C2

INH

are referred to 25 °C)

Table 7. Electrical characteristics for ST1S30I

Symbol Parameter Test conditions Min. Typ. Max. Unit

FB Feedback voltage 784 800 816 mV

I

FB

V

OVP

I

Q

I

O

V

INH

I

INH

%VO/ΔVIOutput line regulation VI = 2.7 V to 5.5 V, IO = 100 mA

%VO/ΔIOOutput load regulation IO = 10 mA to 2 A

PWMfSPWM switching frequency VFB = 0.65 V 1.2 1.5 1.8 MHz

D

MAX

R

DSON

R

DSON

I

SWL

ν

T

SHDN

T

HYS

%VO/ΔIOLoad transient response

%VO/ΔIOShort circuit removal response

1. Guaranteed by design, but not tested in production.

VFB pin bias current 600 nA

Minimum input voltage IO = 10 mA to 2 A 2.7 V

I

Overvoltage protection
threshold

Overvoltage protection
hysteresis

Quiescent current

Output current VI = 2.7 to 5.5 V

Inhibit threshold

VO rising 1.05 VO1.1 V

V

falling 5 %

O

V

> 1.2 V, not switching 1.5 2.5 mA

INH

< 0.0 V, T = - 30 °C to 85 °C 1 µA

V

INH

Device ON, V

(1)

= 2.7 to 5.5 V 1.3

I

= 2.7 to 5 V 1.2

I

3A

O

Device OFF 0.4

Inhibit pin current 2µA

(1)

(1)

0.16

0.2 0.6

Maximum duty cycle 80 87 %

-N NMOS switch on resistance ISW = 750 mA 0.1 Ω

-P PMOS switch on resistance ISW = 750 mA 0.1 Ω

Switching current limitation

Efficiency

(1)

(1)

3.7 4.4 5.1 A

IO = 10 mA to 100 mA, VO = 3.3 V 65

= 100 mA to 3 A, VO = 3.3 V 85

I

O

Thermal shutdown 150 °C

Thermal shutdown hysteresis 20 °C

I

= 100 mA to 1 A, TA = 25 °C

O

tR = tF ≥ 200 ns

= 10 mA to IO = short,

I

O

= 25 °C

T

A

(1)

(1)

-10 +10 %V

-10 +10 %V

%V

ΔV

%V

ΔI

%

V

VDevice ON, V

/

O

I

/

O

O

O

O

Doc ID 17927 Rev 1 7/11

Typical application circuits ST1S30

5 Typical application circuits

Figure 3. Application circuit fot V

OUT

> 1.2 V

Figure 4. Application circuit for 0.8 V < V

OUT

< 1.2 V

Note: These typical application circuits are provided to help designing the external components.

However, we recommend to thoroughly validate any circuit solution in the real application
environment conditions.

8/11 Doc ID 17927 Rev 1

ST1S30 Package mechanical data

6 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK

Table 8. DFN8 (4x4) mechanical data

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

mm.

Dim.

Min. Typ. Max.

A 0.80 0.90 1.00

A1 0 0.02 0.05

A3 0.20

b 0.23 0.30 0.38

D 3.90 4.00 4.10

D2 2.82 3.00 3.23

E 3.90 4.00 4.10

E2 2.05 2.20 2.30

e 0.80

L 0.40 0.50 0.60

Figure 5. DFN8 (4x4) mechanical dimensions

"

Doc ID 17927 Rev 1 9/11

Revision history ST1S30

7 Revision history

Table 9. Document revision history

Date Revision Changes

09-Sep-2010 1 First release

10/11 Doc ID 17927 Rev 1

ST1S30

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