– 380 Mbps (1.8 to 3.3 V translation)
– 260 Mbps (<1.8 to 3.3 V translation)
– 260 Mbps (translates to 2.5 V)
– 210 Mbps (translates to 1.5 V)
■ Latch-up performance exceeds 500 mA
(JESD 17)
■ ESD performance:
HBM > 2000 V (MIL STD 883 method 3015);
MM > 200 V
■ R
HS compliant to Flip-Chip package
O
Table 1.Device summary
=0,
Flip-Chip 5
Description
The ST1G3234B is a dual supply low voltage
CMOS 1-bit bus buffer level translator fabricated
with sub-micron silicon gate and five-layer metal
wiring C
interface between a 3.3 V bus and a 2.5 V or
1.8 V bus in a mixed 3.3 V/1.8 V, 3.3 V/2.5 V,
1.8 V/1.4 V and 2.5 V/1.8 V supply systems, it
achieves high speed operation while maintaining
the CMOS low power dissipation.
The ST1G3234B is intended for one-way
asynchronous communication between data
buses. The input and output power-down
protections disable the device when both power
supply are down, so that the buses are effectively
isolated.
The input tolerant buffers allow to translate V
compatible signals and greater signals than V
up/down to V
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
The ST1G3234B is V
very low current consumption when the V
grounded.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
V
V
V
I
I
T
CCA
CCB
OA
V
IB
OA
V
IB
I
IK
I
OK
I
OA
CCA
CCB
P
stg
T
Output supply voltage-0.5 to +4.6V
Input supply voltage-0.5 to + 4.6V
DC output voltage
(power down mode: V
CCA=VCCB
=Gnd)
DC input voltage
(power down mode: V
CCA=VCCB
=Gnd)
DC output voltage -0.5 to V
-0.5 to +4.6V
-0.5 to +4.6V
+ 0.5V
CCA
DC input voltage -0.5 to + 4.6V
DC input diode current− 20mA
DC output diode current− 50mA
DC output current± 50mA
DC V
DC V
Power dissipation200mW
d
or ground current± 100mA
CCA
or ground current± 100mA
CCB
Storage temperature-65 to +150°C
Lead temperature (10 sec)260°C
L
5/17
Maximum ratingST1G3234B
3.1 Recommended operating conditions
Table 5.Recommended operating conditions
SymbolParameterValueUnit
V
V
CCA
CCB
V
V
T
Supply voltage 1.4 to 3.6V
Supply voltage1.4 to 3.6V
Input voltage (B1)0 to V
IB
Output voltage (A1)0 to V
OA
Operating temperature-40 to 85°C
op
dt/dvInput rise and fall time
CCB
CCA
= 3.0 to 3.6 V0 to 10ns/V
V
CCB
= 2.3 to 2.7 V0 to 20ns/V
V
CCB
V
= 1.2 to
CCB
1.95 V
0 to 100ns/V
V
V
6/17
ST1G3234BElectrical characteristics
4 Electrical characteristics
Table 6.DC specification
Test conditionValue
SymbolParameter
IHB
ILB
OHA
OLA
I
IB
High level
input voltage
Low level input
voltage
High level
output voltage
Low level
output voltage
Input leakage
current
V
V
V
V
CCB
(1)
V
(V)
CCA
(1)
V
(V)
1.4
1.80.65 V
1.4 to
2.51.61.6
3.6
TA = 25 °C-40 to 85 °C
MinMaxMinMax
0.65 V
CCB
CCB
0.65 V
0.65 V
CCB
CCB
3.32.02.0
1.4
1.4 to
1.80.35 V
0.35 V
3.6
CCB
CCB
0.35 V
0.35 V
2.50.70.7
3.30.80.8
1.4 to
3.6
1.4 to
3.6
2.73.6
1.42.7
1.4I
2.75I
2.3I
1.65I
1.4I
1.4I
2.75I
2.75I
2.3I
1.65I
1.4I
= -100 μA1.21.2
O
=-10mA2.22.2
O
=-6mA1.81.8
O
=-2mA1.41.4
O
=-1mA1.11.1
O
= -100 μA0.20 0.20
O
= 1 mA0.400.40
O
=10mA0.550.55
O
= 6 mA0.400.40
O
= 2 mA0.250.25
O
= 1 mA0.200.20
O
=3.6V
± 0.5± 5μA
± 0.5± 5μA
V
IB=VCCB
or GND
V
IB
or GND
Unit
V
CC
B
CC
B
V
V
V
I
OFF
Power OFF
leakage
current
V
00
= GND to
IB
3.6 V
VOA= GND
to 3.6 V
± 1.0± 10μA
7/17
Electrical characteristicsST1G3234B
Table 6.DC specification (continued)
Test conditionValue
SymbolParameter
V
(V)
1.4 to
CCB
CCA
Quiescent
supply current
Quiescent
supply current
1.4 to
1.4 to
I
I
1. VCC range = 1.8 ± 0.15 V; 2.5 ± 0.2 V; 3.3 ± 0.3 V
CCB
3.6
3.6
3.6
(1)
V
CCA
(1)
(V)
1.4 to
3.6
0
1.4 to
3.6
VIB=V
VIB =V
Table 7.AC electrical characteristics
SymbolParameter
t
PLH tPHL
Propagation delay time B1 to A1
TA = 25 °C-40 to 85 °C
MinMaxMinMax
CCB
or GND
CCB
GND
or
0.55μA
0.55μA
Test conditionValue
V
CCB
(V)
V
CCA
(V)
2.3 to 3.61.4
-40 to 85 °C
MinMax
2.05.0
1.4 to 1.951.42.05.0
2.3 to 3.61.65 to 1.952.04.5
1.4 to 1.951.65 to 1.952.04.8
CL=10pF
1.4 to 1.952.3 to 2.72.03.5
1.4 to 1.953.0 to 3.62.03.5
2.3 to 2.73.0 to 3.61.03.0
Unit
Unit
ns
2.3 to 3.61.4
1.4 to 1.951.42.05.5
2.3 to 3.61.65 to 1.952.05.0
t
PLH tPHL
Propagation delay time B1 to A1
1.4 to 1.951.65 to 1.952.05.2
1.4 to 1.952.3 to 2.72.04.0
1.4 to 1.953.0 to 3.62.04.0
2.3 to 2.73.0 to 3.61.03.5
8/17
C
=30pF
L
RL= 500 Ω
2.05.5
ns
ST1G3234BElectrical characteristics
Table 8.Capacitance characteristics
Test conditionValue
SymbolParameter
C
C
Input capacitanceopen open5pF
INB
Output capacitance2.53.36pF
O
V
V
CCB
(V)
2.53.3
CCA
(V)
TA = 25 °C-40 to 85 °C
MinTypMaxMinMax
27
1.83.327
C
Power dissipation
PD
capacitance
1.42.523
f=10MHz
1.41.820
3.31.827
Note:1CPD is defined as the value of the device’s internal equivalent capacitance which is
calculated from the operating current consumption without load. (Refer to Test Circuit).
Average current can be obtained by the following equation: I
= CPD x VCC x fIN + ICC/4
CC(opr)
(per circuit)
Unit
pF
9/17
Test circuitST1G3234B
5 Test circuit
Figure 4.Test circuit
V
CCBVCCA
6V or 2V
CC
Pulse
generator
D.U. T
R
1
OPEN
GND
R
T
C
L
Table 9.Test circuit
Tes tSw itch
t
, t
PLH
PHL
C
= 10/30 pF or equivalent (includes jig and probe capacitance)
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
Figure 6.Marking
Distinguishing feature
8V Y WW
marking
assy
value
year
assy
week
A
B
C
12
8VYWW
3
Marking
CS2011
12/17
ST1G3234BPackage mechanical data
Figure 7.Flip-Chip 5 package outline
13/17
Package mechanical dataST1G3234B
Table 11.Flip-Chip 5 mechanical data
millimetersmils
Symbol
MinTypMaxMinTypMax
A0.5850.650.71423.025.628.1
A10.210.250.298.39.811.4
a20.4015.7
b0.2650.3150.36510.412.414.4
D 1.311.361.4151.653.555.5
D19.86634.1
E 0.971.021.0738.240.242.1
E10.519.7
eD0.3830.4330.48315.117.019.0
eE0.200.250.307.99.811.8
fD0.2479.7
fE0.26010.2
ccc0.0803.1
14/17
ST1G3234BPackage mechanical data
Figure 8.Flip-Chip 5 tape and reel information
1. Drawing not to scale.
Table 12.Flip-Chip 5 tape and reel mechanical data
millimetersinches
Symbol
MinTypMaxMinTypMax
A1786.926
C12.813.20.5040.519
D20.20.795
N 4950511.9291.9692.008
T12.40.488
Ao1.601.651.700.0630.0650.067
Bo1.271.321.370.0500.0520.054
Ko0.760.810.860.0300.0320.034
Po3.944.10.1530.1570.161
P3.944.10.1530.1570.161
15/17
Revision historyST1G3234B
8 Revision history
Table 13.Document revision history
DateRevisionChanges
1-Aug-20071Initial release.
3-Dec-20072
Changed t
Recommended operating conditions on page 6, updated V
at V
CCA
value from 4.4 ns to 4.0 ns, removed footnote inTa b le 5 :
PD
OLA
= 1.4 V, changed symbol names for quiescient supply
value
current and minor text changes in Table 6: DC specification on
page 7, removed V
and VY waveforms data in Table 10: Waveform
x
symbol value on page 11, replaced Figure 6: Marking on page 12
and enlarged Figure 7: Flip-Chip 5 package outline on page 13 to
improve readability.
16/17
ST1G3234B
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