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TLE 4276
User Manual
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Siemens TLE 4276 User Manual

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Low-Drop Voltage Regulator TLE 4276
Features
• Output voltage tolerance ≤±4%
• Low-drop voltage
• Inhibit input
• Short-circuit-proof
• Reverse polarity proof
• Suitable for use in automotive electronics
Type Ordering Code Package
P-TO220-5-3
TLE 4276 V50 Q67000-A9262 P-TO220-5-3 TLE 4276 V85 Q67000-A9263 P-TO220-5-3 TLE 4276 V10 Q67000-A9264 P-TO220-5-3 TLE 4276 G V50 Q67006-A9266 P-TO220-5-122 TLE 4276 G V85 Q67006-A9268 P-TO220-5-122 TLE 4276 G V10 Q67006-A9270 P-TO220-5-122 TLE 4276 S V50 Q67000-A9267 P-TO220-5-43 TLE 4276 S V85 Q67000-A9269 P-TO220-5-43 TLE 4276 S V10 Q67000-A9271 P-TO220-5-43 TLE 4276 V Q67000-A9265 P-TO220-5-3 TLE 4276 SV Q67000-A9273 P-TO220-5-43 TLE 4276 GV Q67006-A9272 P-TO220-5-122 TLE 4276 D V50 Q67006-A9358 P-TO252-5-1
▼
TLE 4276 DV Q6 7006-A9361 P-TO252-5-1
▼
P-TO220-5-43
P-TO220-5-122
SMD = Surface Mounted Device
▼ New type
P-TO252-5-1 (D-PAK)
Semiconductor Group 1 1998-11-01
TLE 4276
Functional Description
The TLE 4276 is a low-drop voltage regulator in a TO220 package. The IC regulates an input voltage up to 40 V to
V
voltage (V). The maximum output current is 400 mA. The IC can be switched off via the inhibit input, which causes the current consumption to drop below 10 µA. The IC is short­circuit-proof and incorpora tes temperature protection that disables it at over-tempera­ture.
Dimensioning Information on External Components
C
The input capacitor approx. 1 Ω in series with
is necessary for compensating line influences. Using a resistor of
I
C
, the oscillating of input inductivity and input capacitance can
I
be damped. The output capacitor Stability is guaranteed at val ues temperature range.
= 5.0 V (V50), 8.5 V (V85 ), 10 V (V10) and adjustable
Qrated
C
is necessary for the stability of the regulation circuit.
Q
C
≥ 22 µF and an ESR of ≤ 3 Ω within the operating
Q
Circuit Description
The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against:
• Overload
• Overtemperature
• Reverse polarity
Semiconductor Group 2 1998-11-01
Pin Configuration
Q
Ι
GND
N.C.
INH
1
5
AEP02041
(VA)
(top view)
P-TO220-5-3 P-TO220-5-43 P-TO252-5-1P-TO220-5-122
TLE 4276
GND
Figure 1
1
1
Ι
GND
INH
5
Q
N.C. (VA)
AEP02042
Ι
GND
INH
5
Q
N.C.
AEP02043
15
Q
INHΙN.C.
(VA)
AEP02560
Pin Definitions and Functions Pin No. Symbol Function
1 I Input; block to ground directly at the IC with a ceramic capacitor. 2INHInhibit; low-active input 3GNDGround 4N.C.
VA
Not connected for V50, V85, V10 Voltage Adjust Input; only for adjustable output from external
voltage divider.
5QOutput; block to ground with a ≥ 22 µF capacitor.
Semiconductor Group 3 1998-11-01
TLE 4276
Temperature
Sensor
1
Ι
Control
Amplifier
Bandgap
Reference
INH
*)
For fixed Voltage Regulator only
**)
For adjustable Voltage Regulator only
Saturation
Control and
Protection
Circuit
6
Q
Buffer
*)
**)
2
4
VA
3
GND
AEB02044
Figure 2 Block Diagram
Semiconductor Group 4 1998-11-01
TLE 4276
Absolute Maximum Ratings
T
= – 40 to 150 °C
j
Parameter Symbol Limit Values Unit Test Condition
min. max.
Voltage Regulator Input
Voltage Current
Inhibit
Voltage
Voltage Adjust Input
Voltage
Output
Voltage Current
Ground
V I
V
V
V I
I
Q
I
INH
VA
Q
–42 45 ––
V
–
– Internally limited
–42 45 V –
–0.3 10 V –
–1.0 40 V – – – – Internally limited
Current
I
GND
–100mA–
Temperature
Junction temperature Storage temperature
T
j
T
stg
–150°C– –50 150 °C–
Note: Maximum ratings are abs olute ratings; exceeding any one of th ese values may
cause irreversible damage to the integrated circuit.
Semiconductor Group 5 1998-11-01
Operating Range Parameter Symbol Limit Values Unit Remarks
min. max.
TLE 4276
Input voltage
Junction temperature
V T
I
j
V
+0.5 40
Q
V
–40 150 °C–
Thermal Resistance
Junction ambient Junction ambient Junction case
1)
Soldered in, minimal footpri nt
R R R
thja
thja
thjc
– 65 K/W TO220 – 70 K/W TO2521), TO263 –4K/W–
Characteristics
V
=13.5V; –40°C<Tj<150°C (unless otherwise specified)
I
Parameter Symbol Limit Values Unit Measuring
Condition
V50-Version
I
5mA< 6V<
Q
V
<40V
I
< 400 mA
Output voltage
V
min. typ. max.
Q
4.8 5 5.2
V
–
Measuring Circuit
1
Output voltage
Output voltage
Output voltage tolerance
Output current limitation
1)
Current consumption;
I
= II– I
q
Q
Current consumption;
I
= II– I
q
Q
V
Q
V
Q
∆V
I
Q
I
q
I
q
8.16 8.5 8.84
9.6 10 10.4
Q
– 4 4 % V-Version
V
V
V85-Version
I
5mA<
9.5 V <
< 400 mA
Q
V
<40V
I
V10-Version
I
5mA< 11 V <
V
=2.5V
V.A.
< 400 mA
Q
V
<40V
I
1
1
1
400 600 – mA – 1
–010µA V
T
=0V;
INH
≤ 100 °C
j
1
–100220µA IQ=1mA 1
Semiconductor Group 6 1998-11-01
Characteristics (cont’d)
V
=13.5V; –40°C<Tj<150°C (unless otherwise specified)
I
TLE 4276
Parameter Symbol Limit Values Unit Measuring
Condition
I
=250mA
Q
Current
min. typ. max.
I
q
–51510
mA
consumption;
I
= II– I
q
Q
Drop voltage
Load regulation
Line regulation
Power supply ripple rejection
Temperature output voltage
1)
I
q
V
DR
∆V
Q
∆V
Q
PSRR
dV
Q
dT
I
25
mA
=400mA
Q
–250500mVIQ=250mA
V
= VI– V
DR
–535mVIQ= 5 mA to
400 mA
– 1025mV∆Vl= 12 V to 32V
I
=5mA
Q
–60–dBfr= 100 Hz;
V
=0.5V
r
SS
–0.5––– mV/K
drift
Measuring Circuit
1 1
1
Q
1
1
1
1)
Measured when the output v olt age VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V.
Inhibit
Inhibit on
V
INH
–23.5VVQ ≥ 4.9 V 1
voltage Inhibit off
V
INH
0.5 1.7 – V VQ ≤ 0.1 V 1
voltage Input current
I
INH
51020µA V
=5V 1
INH
Semiconductor Group 7 1998-11-01
TLE 4276
Ι
Input
V
Ι
Ι
µ
100 F
*) Optional for adjustable Voltage Regulator
Figure 3 Measuring Circuit
100 nF
Ι
INH
V
INH
Ι
C
Q
µ
22 F
Q
1
5
TLE 4276
2
3
*) 4
Voltage
Adjust
R
1
R
2
Output
*)
V
*)
Q
AES02045
R
L
1
5
Output
Input
C
e.g. KL 15
Ι
2
TLE 4276
3
*) Optional for adjustable Voltage Regulator
*) 4
C
Q
Voltage
Adjust
R
*)
1
R
*)
2
AES02046
Figure 4 Application Circuit
Semiconductor Group 8 1998-11-01
Typical Performance Characteristics (V50, V85 and V10):
TLE 4276
Drop Voltage VDR versus Output Current I
600
mV
V
dr
400
300
200
100
0
0 100
Q
T
= 25 C
T
j
V
dr=QNOM-0.1 V
AED01962
= 125 C
j
V
300
Ι
mA
Q
Max. Output Current I Input Voltage V
I
versus
Q
AED01963
800
mA
Ι
Q
600
T
= 25 C
j
V
= 0 V
Q
400
200
0
400200
20010
30
40
50
V
V
Ι
Current Consumption I Output Current I
60
mA
Ι
q
40
30
20
10
0
100
0 200
(high load)
Q
T V
300
versus
q
= 25 C
j
= 13.5 V
Ι
AED01964
600400
mA
Ι
Q
Current Consumption Iq versus Output Current I
0.6
mA
Ι
q
0.4
0.3
0.2
0.1
0
01020mA40 60
(low load)
Q
= 25 C
T
j
= 13.5 V
V
Ι
30
AED01965
Ι
Q
Semiconductor Group 9 1998-11-01
Typical Performance Characteristics for V50:
TLE 4276
Output Voltage VQ versus
= 13.5 V
V
Ι
j
40-40 0
80 120
Temperature T
5.20 V
V
Q
5.10
5.00
4.90
4.80
4.70
4.60
AED01966
160
C
T
j
Current Consumption
V
Input Voltage
30
mA
Ι
q
20
10
0
0
I
= 25 C
T
j
R
L
10 20
=
20
I
versus
q
Ω
30
AED01967
V
V
Ι
50
Low Voltage Behavior
6
V
V
Q
5
4
V
=
V
Ι
Q
3
T
j
R
2
1
0
0
2
L
4
V
Q
= 25 C
Ω
= 20
AED01968
1068
V
V
Ι
High Voltage Behavior
3.5
mA
Ι
Ι
3.0
2.5
2.0
1.5
1.0
0.5
-2
T
= 25 C
j
R
= 3.3 k
L
0
Ω
AED01969
50250-25-50
V
V
Ι
Semiconductor Group 10 1998-11-01
Typical Performance Characteristics for V85:
TLE 4276
Output Voltage VQ versus
= 13.5 V
V
Ι
0-40 40
j
Temperature T
9.0 V
V
Q
8.5
8.0
7.5
AED01970
12080
C
T
j
160
Current Consumption
V
Input Voltage
30
mA
Ι
q
20
10
0
0
I
= 25 C
T
j
R
L
10 20
= 20
I
versus
q
Ω
30
AED01971
V
V
Ι
50
Low Voltage Behavior
12
V
V
Q
10
8
V
=
V
Ι
Q
6
T
j
R
4
2
0
08
4
L
V
Q
= 25 C
Ω
= 34
AED01972
161220
V
V
Ι
High Voltage Behavior
3.5
mA
Ι
Ι
3.0
2.5
2.0
1.5
1.0
0.5
T
j
R
L
0
-2
-50 -25
= 25 C = 8.5 k
Ω
0
AED01973
25 50
V
V
Ι
Semiconductor Group 11 1998-11-01
Typical Performance Characteristics for V10:
TLE 4276
Output Voltage VQ versus
= 13.5 V
V
Ι
0-40 40
j
Temperature T
10.5 V
V
Q
10.0
9.5
9.0
AED01974
12080
C
T
j
160
Current Consumption
V
Input Voltage
30
mA
Ι
q
20
10
0
0
I
= 25 C
T
j
R
L
10 20
= 20
I
versus
q
Ω
30
AED01975
V
V
Ι
50
Low Voltage Behavior
12
V
V
Q
10
8
V
=
V
Ι
Q
6
T
j
R
4
2
0
08
4
L
V
Q
= 25 C
Ω
= 34
AED01976
161220
V
V
Ι
High Voltage Behavior
3.5
mA
Ι
Ι
3.0
2.5
2.0
1.5
1.0
0.5
T
j
R
L
0
-2
-50 -25
= 25 C = 10 k
Ω
0
AED01977
25 50
V
V
Ι
Semiconductor Group 12 1998-11-01
Package Outlines
P-TO220-5-3
(Plastic Transistor Single Outline)
TLE 4276
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”
Semiconductor Group 13 1998-11-01
Dimensions in mm
P-TO220-5-43
(Plastic Transistor Single Outline)
TLE 4276
Semiconductor Group 14 1998-11-01
P-TO220-5-122
(Plastic Transistor Single Outline)
TLE 4276
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device
Dimensions in mm
Semiconductor Group 15 1998-11-01
P-TO252-5-1
(Plastic Transistor Single Outline)
TLE 4276
+0.15
6.5
-0.10
B
±0.1
1
0...0.15
0.51 min
-0.2
±0.5
6.22
9.9
0.15 max per side
±0.1
1
(4.17)
5.4
±0.1
±0.15
0.8
5x0.6
A
±0.1
1.14
4.56
M
B
A0.25
All metal surfaces tin plated, except area of cut.
2.3
+0.05
-0.10
0.9
0.5
GPT09161
+0.08
-0.04
+0.08
-0.04
0.1
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device
Dimensions in mm
Semiconductor Group 16 1998-11-01
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