The general-purpose single-ended switch-mode power supply device for the direct
control of SIPMOS power transistors incorporates both digital and analog functions.
These are required for the construction of high-quality flyback, forward and choke
converters. The device can be likewise used for transformer-less voltage multipliers and
variable-speed motors.
Faults occurring during operation of the switch-mode power supply are detected by
comparators integrated in the device which initiate protective functions.
In addition, pairs of power supplies can be synchronized in antiphase. In-phase or
antiphase synchronization is possible when more than two power supplies are involved.
Semiconductor Group105.96
Pin Configuration
(top view)
TDA 4916 GG
P-DSO-24-1
Figure 1
Semiconductor Group205.96
Pin Definitions and Functions
Pin No.SymbolFunction
10V GNDGND
TDA 4916 GG
2
V
S
Supply voltage
30V QSIPGround QSIP
4Q SIPSIPMOS driver
5
V
QSIPSupply voltage driver
S
6SFSeries feed
7 – I K5/– I K6Current sensor negative input
8+ I K5Current sensor K5
9+ I K6Current turn-OFF K6
10Q K6Output K6
11POPulse omission
12
The individual functional sections of the device and their interactions are described
below.
Power Supply at
V
S
The device does not enable the output until the turn-ON threshold ofVS is exceeded. The
duty factor (active time/period) can then rise from zero to the value set with K1 in the time
determined by the soft start. The turn-OFF threshold lies below the turn-ON threshold.
Below the turn-OFF threshold the output Q SIP is reliably low.
Frequency Generator
The frequency is mainly determined by close-tolerance external components and the
calibrated reference voltage.
R
The switching frequency at the output can be set by suitable choice of
and Ct.
t
The maximum possible duty factor can be reduced by a defined amount by means of a
C
resistor from
defined amount by means of a resistor from
to 0V GND. The maximum possible duty factor can be increased by a
T
C
to VS.
T
Ramp Generator
The ramp generator is controlled by the frequency generator and operates with the same
C
frequency. Capacitor
on the ramp generator is discharged by an internally-set current
r
and charged via a current set externally. The duration of the falling edge of the ramp
generator output must be shorter than its rise time. Only then do the upper and lower
switching levels of the ramp generator signal have their nominal values.
In “voltage mode control” operation, the rising edge of the ramp generator signal is
compared with an externally set dc voltage in comparator K1 for pulse-width control at
the output. The slope of the rising edge is set by the current through
source connected to
R
can be the SMPS input voltage. This makes it possible to control
r
R
. The voltage
r
the duty factor for a constant volt-second product at the output. This control option
(precontrol) permits equalization of known disturbances (e.g. input voltage ripple).
Superimposed load current control (current mode control) can also be implemented. For
this purpose the actual current at the source of the SIPMOS transistor is sensed and
compared with the specified value in comparator K5.
Semiconductor Group505.96
TDA 4916 GG
Comparator K1 (duty factor setting for voltage mode control)
The two plus inputs of the comparator are so connected that the lower plus level is
always compared with the minus input level. As soon as the voltage of the rising edge of
the sawtooth (minus input) exceeds the lower of the two plus input levels, the output is
inhibited via the turn-OFF Flip-Flop, that is to say the High time of the output can be
continuously varied. Since the frequency remains constant, this corresponds to a duty
factor change.
Comparator K2
The comparator has a switching threshold at 1.5 V. Its output sets the fault Flip-Flop
when the voltage on capacitor
the setting pulse only if no reset pulse (fault) is applied. This prevents resetting of the
output as long as a fault signal is present.
C
lies below 1.5 V. However, the fault Flip-Flop accepts
a
Comparators K3 (overvoltage), K4 (undervoltage), VS Undervoltage, V
REF
Overcurrent
These are fault detectors which cause the output to be inhibited immediately by the fault
Flip-Flop when faults occur. When faults are no longer present, the duty factor is
reestablished via the soft start
C
. In the event of undervoltage, a current is injected at
SS
the input of K4 with the aid of which an adjustable hysteresis or latching is made
possible. The value of the hysteresis is determined by the internal resistance of the
external drive source and the current injected internally at the input of K4. In the event
of undervoltage at K4, the injected current flows into the device.
Comparator K5 (duty factor setting for current mode control)
K5 is used to sense the source current at the switching transistor. The plus input of the
comparator is fed out. Enabling of output Q SIP after cessation of the fault is effected
with an H signal at the turn-OFF Flip-Flop output.
Comparator K6 (overcurrent turn-OFF)
The turn-OFF Flip-Flop is reset when overcurrent is detected by K6. In combination with
the pulse-omission facility, individual pulses can then be omitted. This then results in a
limited rise in the output current with a rising overload at the output.
Semiconductor Group605.96
TDA 4916 GG
Operational Amplifier OP
Opamp OP is a high-quality operational amplifier. It can be used in the control circuit to
transfer the variations in the voltage to be regulated in amplified form to the free plus
input of comparator K1. As a result, a voltage change is converted into a duty factor
change. The output of OP is an open collector. The frequency response of OP is already
corrected. The plus input is connected internally via a capacitor to ground. This gives the
inverting amplifier a more favorable phase response.
Turn-OFF Flip-Flop AFF
A pulse is fed to the set input of the turn-OFF Flip-Flop with the falling edge of the
frequency generator signal. However, it can only really be set if no reset signal is applied.
With a set turn-OFF Flip-Flop, the output is enabled and can be active. The Flip-Flop
inhibits the output in the event of a turn-OFF signal from K1, K5, K6 or K7.
Fault Flip-Flop
Fault signals fed to the reset input of the fault Flip-Flop cause the output to be
immediately disabled (Low), and to be turned on again via the soft start
C
after
SS
removing fault-condition.
Soft Start
C
SS
The smaller of the two voltages at the plus inputs of K1 - compared with the ramp
generator voltage - is a measure of the duty factor at the output. At the instant the device
is turned-ON, the voltage on capacitor
C
equals zero. Provided no fault exists, the
SS
capacitor is charged up to its maximum value.
C
is discharged in the event of a fault. However, the fault Flip-Flop inhibits the output
SS
immediately. Below a charging voltage of approx. 1.5 V, a set signal is applied to the fault
Flip-Flop and the output is enabled, provided a reset signal is not applied
simultaneously. However, since the minimum ramp generator voltage is about 1.8 V, the
duty factor at the output is not actually slowly and continuously increased until the
voltage on
The Z-diode limits the voltage on capacitor
C
exceeds a value of 1.8 V.
SS
C
. The voltage at the ramp generator can
SS
reach a higher level than the Zener voltage. With a suitable ramp generator rising edge
slope, the duty factor can be limited to a wanted maximum value.
Pulse Omission PO
In the event of overcurrent in the SIPMOS transistors it is frequently necessary to omit
pulses even with minimum duty factor. Only this measure ensures that the SIPMOS
transistors cannot be overloaded. This wanted function can be achieved with Pulse
Omission PO and Overcurrent Comparator K7 by means of a suitable external circuit.
Semiconductor Group705.96
TDA 4916 GG
Reference Voltage V
REF
The reference voltage source makes available a source with a high-stability temperature
characteristic which can be used for external connection to the operational amplifier, the
fault comparators, the frequency generator, or to other external units. The voltage
source is short-circuit-proof to ground.
Synchronization I SYN, Q SYN
The device has an input and an output for synchronization. In the case of a synchronized
device (slave), its output Q SIP is in phase opposition to the output Q SIP of the
synchronizing device (master). In the case of an unconnected input I SYN, or with
connection to
V
, or also when a series capacitor (without switching transitions) is
REF
connected, the device receives its clock from the internal frequency generator in
accordance with the circuit connected to it. As soon as switching transitions appear at
I SYN, switchover to external synchronization and vice versa takes place after a delay.
After a switchover process, a few clock cycles must elapse in addition to the delay before
the frequency and phase achieve their steady states.
Series Feed SF
The Series Feed circuit section is used to turn-OFF the external series-feed transistor
when energy recovery commences. As a result there is minimum power loss in the
supply to the device. With the series-feed transistor turned-OFF, its drive current flows
via VS to
V
.
S
SIPMOS Driver Output Q SIP
The output is High active. The time during which the output is active can be continuously
varied.
The duration of the rising edge of the frequency generator signal is the minimum time
during which the output can be Low.
The duration of the falling edge of the frequency generator signal is the maximum time
during which the output can be High.
The output driver is designed as a push-pull stage. The output current is limited internally
to the specified values.
V
Output Q SIP is connected via diodes to the supply
QSIP and 0V QSIP.
S
A protection circuit SS lies between Q SIP and GND to clamp the output to ground at low
V
impedance in the event of undervoltage at
.
S
Semiconductor Group805.96
TDA 4916 GG
When the supply to the switch-mode power supply is switched on, the capacitive
displacement current from the gate of the SIPMOS transistor is conducted to the
smoothing capacitor at
V
QSIP may reach about 2.3 V in the process without the SIPMOS transistor being
S
turned-ON.
The diode connected to ground clamps negative voltages at Q SIP to minus 0.7 V.
Capacitive currents which occur with voltage dips at the drain terminal of the SIPMOS
transistor can then flow away unimpeded.
The output is active Low with supply voltages at
function of the diode connected to
pull-down source.
The two ground terminals 0V SQIP and 0V GND can lie at different levels. This permits
connections to be made to the SIPMOS transistor in such a way that the drive currents
for the gate do not flow to the source via the current-sensing resistor. The maximum
permissible level differences between 0V GND and 0V SQIP are given under Functional
Range. If greater level differences are anticipated, it is better to join the two terminals.
V
QSIP by the diode connected to VSQSIP. The voltage at
S
V
and VSQSIP from about 4 V on. The
S
V
QSIP and the resistor are then taken over by the
S
Semiconductor Group905.96
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