Siemens STH81002Z Datasheet
1550nm Laser in Coaxial TO-Package
• Designed for application in fiber-optic networks
• Laser Diode with Multi-Quantum Well structure
• Suitable for bit rates up to 1 Gbit/s
• Ternary photodiode at rear mirror for monitoring and
control of radiant power
• Hermetically sealed subcomponent, similar to TO 18
• with integrated Silicon-Optics for high coupling
efficiencies
STH81002Z
Maximum Ratings
Output power ratings refer to the optical port. The operating temperature of the submount
is identical to the case temperature
Module Symbol Values Unit
Operating Temperature range at case T
Storage Temperature range T
Soldering Temperature
tmax = 10 s, 2 mm distance from bottom edge of case
T
- 40... +85 °C
- 40... +85 °C
260 °C
Laserdiode Symbol Values Unit
Direct forward current I
Radiant power CW
Φ
Reverse Voltage V
e
120 mA
10 mW
2V
Monitor Diode Symbol Values Unit
Reverse Voltage V
10 V
Siemens Aktiengesellschaft page(1/4) 8/94
STH81002Z
Characteristics
All optical data refer to the optical port.
Laser Diode Symbol Values Unit
Optical Output Power
Emission wavelength center of range
Φe =3 mW
Spectral bandwidth Φe =3 mW (RMS) ∆λ
Threshold current I
Forward voltage Φe =3 mW
Radiant power at threshold
Slope Efficiency
Differential series resistance r
Rise Time/Fall Time t
Monitor Diode Symbol Values Unit
Dark Current, VR =5V, Φe = 0
Photocurrent, Φe =3 mW
Laser Diode Relative Radiant Power
Radiant Power in Singlemode Fibre Φe = f(λ)
Φ
λ
V
Φ
η
I
I
e
eth
, t
>6 mW
1510...1590 nm
<5 nm
< 15 mA
< 1,5 V
< 200 µW
> 200 mW/A
< 8
< 1 ns
<500 nA
150...1500 µA
Ω
6
5
4
3
2
1
Optical Power in mW
0
0 102030
F orward C urrent in m A
100
90
80
70
60
50
40
30
Relative Optical Power
20
10
0
1546 1548 1550 1552 1554
Wavelength in nm
Siemens Aktiengesellschaft page(2/4) 8/94
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