Siemens ILD5, ILQ2, ILD2, ILQ5, ILQ1 Datasheet

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DUAL CHANNEL

QUAD CHANNEL

ILD1/2/5

ILQ1/2/5

PHOTOTRANSISTOR

OPTOCOUPLER

FEATURES

• Current Transfer Ratio at I

=10 mA

F

ILD/Q1, 20% Min.
ILD/Q2, 100% Min.
ILD/Q5, 50% Min.

• High Collector-Emitter Voltage
ILD/Q1: BV
ILD/Q2, ILD/Q5: BV

CEO

=50 V

CEO

=70 V

• Field-Effect Stable by TRansparent IOn
Shield (TRIOS) Isolation Test Voltage, 5300
VAC

RMS

• Underwriters Lab File #E52744

V

• VDE 0884 Available with Option 1

DE

Maximum Ratings (Each Channel)
Emitter

Reverse Voltage ................................................6 V

Forward Current ...........................................60 mA

Surge Current................................................. 2.5 A

Power Dissipation.......................................100 mW

Derate Linearly from 25 °

C..................... 1.3 mW/ ° C

Detector

Collector-Emitter Reverse Voltage

ILD/Q1........................................................... 50 V

ILD/Q2, ILD/Q5...............................................70 V

Collector Current.......................................... 50 mA

Collector Current (t<1 ms)...........................400 mA

Power Dissipation.......................................200 mW

Derate Linearly from 25 °

C......................2.6 mW/ ° C

Package

Isolation Test V oltage (between

emitter and detector referred to
standard climate 23 °

DIN 50014) ....................................5300 VAC

C/50%RH,

RMS

Creepage............................................... min. 7 mm

Clearance...............................................min. 7 mm

Isolation Resistance

V

=500 V, T

IO

V

=500 V, T

IO

=25 ° C .........................R

A

=100 ° C .......................R

A

IO
IO

=10
=10

12
11

Package Power Dissipation ...................... 250 mW

Derate Linearly from 25 °

Storage Temperature................... –40 °

Operating Temperature................–40 °

C..................... 3.3 mW/ ° C

C to +150 ° C

C to +100 ° C

Junction Temperature....................................100 °

Soldering Temperature

(2 mm from case bottom)..........................260 °

Dimensions in inches (mm)

Dual Channel

Pin One I.D.

12

87

.150 (3.81)
.130 (3.30)

.040 (1.02)
.030 (.76 )

.100 (2.54) Typ.

.790 (20.07)
.779 (19.77 )

Anode
Cathode
Cathode

Anode

1
2
3
4

.305 Typ.

(7.75) Typ.

10° Typ.

3°–9°

.012 (.30)
.008 (.20)

Pin One I.D.

.150 (3.81)
.130 (3.30)

.040 (1.02)
.030 (.76 )

8
7
6
5

Anode
Cathode
Cathode

Anode

Anode
Cathode
Cathode

Anode

Emitter
Collector
Collector
Emitter

.135 (3.43)
.115 (2.92)

1
2
3
4
5
6
7
8

.305 Typ.

(7.75) Typ.

10° Typ.

3°–9°

.012 (.30)
.008 (.20)

.268 (6.81)
.255 (6.48)

4° Typ.

.022 (.56)
.018 (.46)

Quad Channel

268 (6.81)
255 (6.48)

4° Typ.

.022 (.56)
.018 (.46)

34

65

.390 (9.91)
.379 (9.63)

.045 (1.14)
.030 (.76)

.045 (1.14)
.030 (.76)

.100 (2.54) Typ.

DESCRIPTION

The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared

Ω

LEDs and silicon NPN phototransistor. Signal information, including a DC

Ω

level, can be transmitted by the drive while maintaining a high degree of
electrical isolation between input and output. The ILD/Q1/2/5 are especially
designed for driving medium-speed logic and can be used to eliminate trou­blesome ground loop and noise problems. Also these couplers can be
used

C
C

to replace relays and transformers in many digital interface applica­tions such as CRT modulation. The ILD1/2/5 has two isolated channels in a
single DIP package and the ILQ1/2/5 has four isolated channels per pack­age.

See Appnote 45, “How to Use Optocoupler Normalized Curves.”

16
15
14
13
12
11
10
9

Emitter
Collector
Collector
Emitter
Emitter
Collector
Collector
Emitter

.135 (3.43
.115 (2.92

5–1

Characteristics

Emitter

Symbol Min. Typ. Max. Unit Condition

Forward Voltage V
Reverse Current I
Capacitance C
Thermal Resistance, Junction to Lead R

F

R

0

THJL

1.25 1.65 V I

0.01 10

µ AV

25 pF V
750

° C/W

Detector

Capacitance C
Leakage Current, Collector-Emitter I
Saturation Voltage, Collector-Emitter V

CE

CEO

CESAT

6.8 pF V
550nAV

0.25 0.4 I
DC Forward Current Gain HFE 200 650 1800 V
Saturated DC Forward Current Gain HFE
Thermal Resistance, Junction to Lead R

THJL

120 400 600 V

SAT

500

° C/W

Package Transfer Characteristics (Each Channel)

Symbol Min. Typ. Max. Unit Condition

ILD/Q1

Saturated Current Transfer Ratio (Collector-Emitter) CTR
Current Transfer Ratio (Collector-Emitter) CTR

ILD/Q2

CESAT

CE

20 90 300 % I

75 % I

=60 mA

F

=6 V

R

=0 V, f=1 MHz

R

=5 V, f=1 MHz

CE

=10 V

CE

=1 mA, I

CE

= 10 V, I

CE

= 0.4 V, I

CE

=10 mA, V

F

=10 mA, V

F

=20 µ A

B

=20 µ A

B

=20 µ A

B

CE

CE

=0.4 V
=10 V

Saturated Current Transfer Ratio (Collector-Emitter) CTR
Current Transfer Ratio (Collector-Emitter) CTR

ILD/Q5

Saturated Current Transfer Ratio (Collector-Emitter) CTR
Current Transfer Ratio (Collector-Emitter) CTR

Isolation and Insulation

Common Mode Rejection, Output High C
Common Mode Rejection, Output Low C
Common Mode Coupling Capacitance C
Package Capacitance C

MH

ML

CM

IO

CESAT

CE

CESAT

CE

170 % I

100 200 500 % I

100 % I

50 130 400 % I

5000 V/ µ sV
5000 V/ µ sV

0.01 pF

0.8 pF V

=10 mA, V

F

=10 mA, V

F

=10 mA, V

F

=10 mA, V

F

=50 V

CM

CM

IO

P-P

=50 V

P-P

=0 V, f=1 MHz

CE

CE

CE

CE

, R
, R

=0.4 V
=10 V

=0.4 V

=10 V

=1 k Ω , I

L

=1 k Ω , I

L

=0 mA

F

=10 mA

F

5–2

ILD/Q1/2/5