Siemens ILH200 Datasheet
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ILH200
HERMETIC PHOTOTRANSISTOR
DUAL CHANNEL OPTOCOUPLER
FEATURES
• Operating Temperature Range, –55 ° C to +125 ° C
• Current Transfer Ratio Guaranteed from
–55 ° C to +100 ° C Ambient Temperature Range
• High Current Transfer Ratio at Low Input Current
• Isolation T est V oltage, 3000 VDC
• Two Isolated Channels per Package
• Standard 8 Pin DIP Package
DESCRIPTION
The ILH200 is designed especially for hi-rel applications requiring optical isolation with high current transfer ratio and low saturation V
. Each channel of the
CE
optocoupler consists of a light emitting diode and a
NPN silicon phototransistor mounted and coupled in
an 8 pin hermetically sealed DIP package. The low
input current makes the ILH200 well suited for direct
CMOS to LSTTL/TTL interfaces.
Dimensions in inches (mm)
.390±.005
(9.91±.13)
8 7 6 5
1
2
3
4
.300
(7.62)
typ.
8
Emitter
7
Collecto
6
Collecto
5
Emitter
.020
(.51)
min.
.018±.002
(.46±.05)
Siemens
XXX XXXX
XXYY
1 2 3 4
.100 ±.010
(2.54±.25)
.150
(3.81)
max.
.125
(3.18)
min.
.320
(8.13)
max.
.010±.002
(.25±.05)
Anode
Cathode
Cathode
Anode
Maximum Ratings
Emitter (per channel)
Reverse Voltage................................................................................6.0 V
Forward Current ..............................................................................60 mA
Peak Forward Current
(1)
......................................................................1 A
Power Dissipation...........................................................................75 mW
Derate Linearly from 25 °
C......................................................0.75 mW/ ° C
Detector (per channel)
Collector-Emitter Voltage ...................................................................70 V
Emitter-Collector Voltage .....................................................................7 V
Continuous Collector Current..........................................................50 mA
Power Dissipation.........................................................................100 mW
Derate Linearly from 25 °
C........................................................1.0 mW/ ° C
Package
Input to Output Isolation Test V oltage
Storage Temperature Range..........................................–65 °
Operating Temperature Range.......................................–55 °
(2 )
...................................3000 VDC
C to +150 ° C
C to +125 ° C
Junction Temperature......................................................................150 °
Soldering Time at 240 °
C, 1.6 mm from case................................ 10 sec.
Power Dissipation.........................................................................350 mW
Derate Linearly from 25 °
Notes:
1. Values applies for P
2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8
shorted together. T
C........................................................3.5 mW/ ° C
1 ms, PRR ≤ 300 pps.
≤
W
=25 ° C and duration=1 second, RH=45%.
A
C
5–1
Characteristics (Each Channel), T
=25 ° C, unless otherwise specified
A
Parameter Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage V
Reverse Breakdown Voltage V
Reverse Current I
Capacitance C
Thermal Resistance R
F
BR
R
J
TH
6VI
1.46 1.7 V I
0.01 10
µ AV
20 pF V
220
° C/W Junction to Lead
=60 mA
F
=10 µ A
R
=6 V
R
=0 V, f=1 MHz
F
Detector
Collector-Emitter Saturation Voltage V
Collector-Emitter Leakage Current I
Capacitance C
Thermal Resistance R
CE(sat)
CEO
CE
TH
0.25 0.4 V I
550nAV
6.8 pF V
220
° C/W Junction to Lead
=20 µ A, I
B
=10 V
CE
=5 V, f=1 MHz
CE
Coupled Characteristic –55 ° C to 100 ° C
Saturated Current Transfer Ratio CTR
Current Transfer Ratio Collector-Emitter CTR
70 210 250 % I
(sat)
100 300 450 % I
ce
=10 mA, V
F
=10 mA, V
F
Isolation and Insulation
Common Mode Rejection, Output High CM
Common Mode Rejection, Output High CM
Package Capacitance C
Insulation Resistance R
Leakage Current, Input–Output I
1000 2000 V /µ sV
H
L
IO
IO
IO
1000 2000 V /µ sV
1.5 pF V
11
10
10
14
10
WV
µ A Relative Humidity ≤ 50%, V
=500 V
CM
=500 V
CM
=0 V, 1 MHz
IO
=500 VDC
IO
=1 mA
CE
=0.4 V
CE
=10 V
CE
, V
p-p
CC
, V ΧΧ =5 V, R
p-p
=5 V, R
=1 K Ω , I
L
=1 K Ω , I
L
3000 VDC, 5 sec.
IO
=0 mA
F
=10 mA
F
Typical Switching Speeds, T
=25 ° C
A
Non-Saturated Switching Symbol Typ. Max. Unit Test Condition
Delay td 0.8 2
Rise tr 2 5
Storage ts 0.4 1.5
Fall tf 2 5
Propagation–High to Low tpHL 1 3
Propagation–Low to High tpLH 1.5 4
Saturated Switching
(1)
Symbol Typ. Max. Unit Test Condition
Delay td 0.7 2
Rise tr 1 3
Storage ts 13.5 30
Fall tf 12 30
Propagation–High to Low tpHL 1.4 5
Propagation–Low to High tpLH 15 40
µ s
µ sV
µ sR
µ sI
=5 V
CC
=75 Ω
L
=10 mA
F
µ s 50% of V
µ s
µ s
µ sV
µ sR
µ sI
µ sV
=0.4 V
CE
=1 K Ω
L
=10 mA
F
=5 V, V
CC
µ s
pp
=1.5 V
TH
5–2
ILH200
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