Siemens ILH100 Datasheet

or

ILH100

HERMETIC PHOTOTRANSISTOR

OPTOCOUPLER

FEATURES

• Operating Temperature Range,
–55 ° C to +125 ° C

• Current Transfer Ratio Guaranteed from
–55 ° C to +100 ° C Ambient Temperature Range

• High Current Transfer Ratio at Low Input Cur­rent

• Isolation T est V oltage, 3000 VDC

• Base Lead Available for Transistor Biasing

• Standard 8 Pin DIP Package

DESCRIPTION

The ILH100 is designed especially for hi-rel applica­tions requiring optical isolation with high current
transfer ratio and low saturation VCE. Each opto­coupler consists of a light emitting diode and a NPN
silicon phototransistor mounted and coupled in an 8
pin hermetically sealed DIP package. The ILH100's
low input current makes it well suited for direct
CMOS to LSTTL/TTL interfaces.

Dimensions in inches (mm)

.390±.005

(9.91±.13)

8 7 6 5

.300
(7.62)
typ.

7

Base

2

3

6

5

Collect

Emitter

.020
(.51)
min.

.018±.002
(.46±.05)

Siemens
XXX XXXX
XXYY

1 2 3 4

.100 ±.010
(2.54±.25)

.150
(3.81)
max.

.125
(3.18)
min.

.320
(8.13)
max.

Anode

Cathode

.010±.002
(.25±.05)

Maximum Ratings
Emitter

Reverse Voltage................................................................................6.0 V

Forward Current ..............................................................................60 mA

Peak Forward Current

(1)

...................................................................... 1 A

Power Dissipation.........................................................................150 mW

Derate Linearly from 25 °

C........................................................1.5 mW/ ° C

Detector

Collector–Emitter Voltage...................................................................70 V

Emitter–Base Voltage...........................................................................7 V

Collector–Base Voltage .....................................................................70 V

Continuous Collector Current..........................................................50 mA

Power Dissipation.........................................................................300 mW

Derate Linearly from 25 °

C........................................................3.0 mW/ ° C

Package

Input–Output Isolation Test V oltage

Storage Temperature Range ..........................................–65 °

(2)

..................................... 3000 VDC

C to +150 ° C

Operating Temperature Range..........................................–55 to +125 °

Junction Temperature......................................................................150 °

Soldering Time at 240 °

C, 1.6 mm from case................................ 10 sec.

Power Dissipation.........................................................................350 mW

Derate Linearly from 25 °

Notes:

1. Values applies for P

2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8

shorted together. T

C........................................................3.5 mW/ ° C

1 ms, PRR£300 pps.

≤

W

=25 ° C and duration=1 second, RH=45%.

A

C
C

5–1

µ

Characteristics

Parameter

(T

=25 ° C, unless otherwise specified)

Α

Symbol Min. Typ. Max. Unit Condition

Emitter

Forward Voltage V
Reverse Breakdown Voltage V
Reverse Current I
Capacitance C
Thermal Resistance R

F
BR

R

J

TH

6VI

1.45 1.7 V I

0.01 10

µ AV

20 pF V
220

° C/W Junction to Lead

Detector
Collector-Emitter Saturation Voltage V
Base-Emitter Voltage V
Collector-Emitter Leakage Current I

CE(sat)
BE

CEO

0.25 0.4 V I

0.65 V I

550nAV
DC Forward Current Gain HFE 250 400 750 V
Saturated DC Forward Gain HFE
Capacitance C

Thermal Resistance R

CE

C

CB

C

EB

TH

(sat)

125 200 325 V

6.8

8.5

11

220

pF
pF
pF

° C/W Junction to Lead

Coupled Characteristics (-55 ° C to 100 ° C)

Saturated Current Transfer Ratio CTR

70 210 250 % I

(sat)

Current Transfer Ratio, Collector-Emitter

CTE

ce

100 300 450 % I

Current Transfer Ratio, Collector-Base

CTR

0.4 0.7 0.9 % I

cb

Isolation and Insulation

Common Mode Rejection Output High CM

Common Mode Rejection Output High CM

Package Capacitance C
Insulation Resistance R
Leakage Current, Input-Output I

IO

H

L

IO

IO

1000 2000 V/ µ sV

1000 2000 V/ µ sV

1.5 pF V

10

11

10

14

10

Ω
µ A Relative Humidity ≤ 50%,

=60 mA

F

=10 µ A

R

=6 V

R

=0 V, f=1 MHz

F

=20 µ A, I

B

=20 µ A

B

=10 V

CE

=10 V, I

CE

=0.4 V, I

CE

V

=5 V, f=1 MHz

CE

=10 mA V

F

=10 mA, V

F

=10 mA, V

F

=500 V

CM

I

=0 mA

F

=500 V

CM

I

=10 mA

F

=0 V, 1 MHz

IO

V

=500 VDC

IO

V

3000 VDC, 5 sec.

IO

CE

B

B

CE

CE

CB

p-p

p-p

=1 mA

=20 µ A

=20 µ A

=0.4 V

=10 V

=9.3 V

, V

CC

, V

CC

=5 V, R

=5 V, R

=1 K Ω ,

L

=1 K Ω ,

L

Typical Switching Speeds (T

Non-Saturated Switching

=25 ° C)

A

Symbol Typ. Max. Unit Test Condition

Delay td 0.8 2
Rise tr 2 5
Storage ts 0.4 1.5
Fall tf 2 5
Propagation-High to Low tpHL 1 3
Propagation-Low to High tpLH 1.5 4

Saturated Switching

(1)

Delay td 0.7 2
Rise tr 1 3
Storage ts 13.5 30
Fall tf 12 30
Propagation-High to Low tpHL 1.4 5

Propagation-Low to High tpLH 15 40

5–2

µ s
µ sV
µ sR
µ sI
µ s 50% of V
µ sR

µ sV
µ sV
µ sR
µ sI
µ sV

sR

=5 V

CC

=75 Ω

L

=10 mA

F

PP

=open

BE

=0.4 V

CE

=0.4 V

CE

=1 K Ω

L

=10 mA

F

=5 V,

CC

V

=1.5 V

TH

=open

BE

ILH100

A

A

C

A

C

A

A

A

C

Figure 1. Switching time waveform and test schematic—

I

s

non-saturated test condition

nput

I

V

F

0

OUT

90%

t

r

I

F

100 Ω

Pulse Width=100 µ
Duty Cycle=1 %

10%

t

f
V

CC

V

OUT

R

L

Figure 2. Forward current versus forward voltage and
temperature

100

25°C

125°C

10

Figure 4. Normalized non-saturated current transfer ratio
versus temperature and LED current

1.2
Normalized to: Ta = 25 °

Vce = 10V, IF = 10 mA

1.0

10 m

0.8

1 mA

0.6

0.4

NCTRce - Normalized CTR

0.2

.5 mA

5 m

1251007550250-25-50

Ta - Ambient Temperature - °C

Figure 5. Normalized saturated current transfer ratio
versus temperature and LED current

1.1

1.0

Vce = 10 V

10 m

20 mA

0.9

0.8

0.7

0.6
Normalized to: Ta = 25°

0.5
Vce = 10V, IF = 10 mA

NCTRce - Normalized CTR

0.4

30 mA

60 mA

1251007550250-25-50

Ta - Ambient Temperature - °C

1

-55°C -25°C 0°C

.1

IF - Forward Current - mA

85°C

1.81.61.41.21.00.8

VF - Forward Voltage - V

Figure 3. Peak LED current versus duty factor refresh
rate and temperature

1.2

10KHz

Tj(max) = 150°C

1.0

1KHz

0.8

100 Hz

0.6

10KHz

0.4

1KHz

100Hz

0.2
60 mA

0.0

IF(Pk) - Peak LED Current - A

25°C

125°C

100806040200

DF - Duty Factor - %

Figure 6. Normalized saturated current transfer ratio
versus temperature and LED current

0.8

0.7

5 mA

Vce = 0.4 V

10 mA

0.6

0.5

0.4

Saturated CTR

0.3

NCTRce(sat) - Normalized

0.5 mA

1 mA

Normalized to Ta =25°C
Vce = 10 V, IF = 10 mA

0.2
1251007550250-25-50

Ta - Ambient Temperature - °C

Figure 7. Collector-emitter current versus temperature
and LED current

0.7

0.6

0.5

0.4

10 m

30 mA

Vce = 0.4 V

20 m

0.3

0.2

Saturated CTR

Normalized to: Ta = 25°

0.1

NCTR(sat)- Normalized

Vce = 10 V , IF = 10 mA

0.0

60 m

1251007550250-25-50

Ta - Ambient Temperature - °C

5–3

ILH100