Siemens ILQ66, IL66, ILD66 Datasheet
r
r
r
r
.
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=2
=2
=2
SINGLE CHANNEL
DUAL CHANNEL
QUAD CHANNEL
IL66 SERIES
ILD66 SERIES
ILQ 66 SERIES
PHOTODARLINGTON OPTOCOUPLER
FEATURES
• Internal RBE for High Stability
• Current Transfer Ratio is Tested
at 2.0 mA and 0.7 mA Input
IL/ILD/ILQ66 Series:
- 1, 100% min. at I
- 2, 300% min. at I
- 3, 400% min. at I
- 4, 500% min. at I
mA, V
F
mA, V
F
=0.7 mA, V
F
mA, V
F
CE
CE
CE
=10 V
=10 V
=10 V
CE
=5 V
• Four Available CTR Categories per Package
Type
• BV
CEO
>60 V
• Standard DIP Packages
• Underwriters Lab File #E52744
V
DE
• VDE 0884 Available with Option 1
DESCRIPTION
IL66, ILD66, and ILQ66 are optically coupled isolators employing Gallium Arsenide infrared emitters
and silicon photodarlington detectors. Switching
can be accomplished while maintaining a high
degree of isolation between driving and load circuits, with no crosstalk between channels.
Maximum Ratings
Emitter (Each Channel)
Peak Reverse Voltage........................................ 6 V
Continuous Forward Current.........................60 mA
Power Dissipation at 25 °
Derate Linearly from 25 °
C......................... 100 mW
C................... 1.33 mW/ ° C
Detector (Each Channel)
Power Dissipation at 25 ° C Ambient........... 150 mW
Derate Linearly from 25 °
C..................... 2.0 mW/ ° C
Package
Isolation Test V oltage
(t=1 sec.)........................................5300 VAC
RMS
Total Package Power Dissipation at 25 ° C
IL66..........................................................250 mW
ILD66....................................................... 400 mW
ILQ66....................................................... 500 mW
Derate Linearly from 25 °
C
IL66......................................................3.3 mW/ °
ILD66................................................. 5.33 mW/ °
ILQ66................................................. 6.67 mW/ °
Creepage.................................................7 min mm
Clearance................................................7 min mm
Comparative Tracking Index..............................175
Isolation Resistance
V
=500 V, T
IO
V
=500 V, T
IO
=25 ° C................................ ≥ 10
A
=100 ° C.............................. ≥ 10
A
12
Ω
11
Ω
Storage Temperature................... –55 ° C to +125 ° C
Operating Temperature................–55 °
Lead Soldering Time at 260 °
C ....................10 sec.
C to +100 ° C
Dimensions in inches (mm)
.248 (6.30)
.256 (6.50)
.039
(1.00)
min.
.018 (0.45)
.022 (0.55)
.255 (6.48)
.268 (6.81)
Typ.
.018 (.46)
.022 (.56)
255 (6.48)
268 (6.81)
C
C
C
.018 (.46)
.022 (.56)
4°
Typ.
3
4
5
6
.335 (8.50)
.343 (8.70)
.130 (3.30)
4°
typ.
34
65
.379 (9.63)
.390 (9.91)
.030 (.76)
.045 (1.14)
4°
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) Typ.
Pin One I.D.
1
2
87
.130 (3.30)
.150 (3.81)
.030 (.76 )
.040 (1.02)
.100 (2.54) Typ.
.100 (2.54) Typ.
Anode
Cathode
NC
Anode
Cathode
Cathode
Anode
Pin
One
I.D.
.130 (3.30)
.150 (3.81)
.030 (.76 )
.040 (1.02)
1
2
3
3°–9°
.300 (7.62)
Typ.
18°
Typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
1
2
3
4
.305
(7.75)
10°
Typ.
.008 (.20)
.012 (.30)
Anode
Cathode
Cathode
Anode
Anode
Cathode
Cathode
Anode
3°–9°
Typ.
Typ.
1
2
3
4
5
6
7
8
.305 Typ.
(7.75) Typ.
.008 (.20)
.012 (.30)
Base
6
Collector
5
Emitter
4
.110 (2.79)
.150 (3.81)
Emitter
8
Collector
7
Collector
6
Emitter
5
.115 (2.92)
.135 (3.43)
10°
Typ.
Emitter
16
Collecto
15
Collecto
14
Emitter
13
12
Emitter
11
Collecto
10
Collecto
9
Emitter
.115 (2.92
.135 (3.43
Pin One I.D.
12
5–1
C
C
C
V
C
V
A
a
V
V
Electrical Characteristics
(T
=25C)
A
Symbol Min. Typ. Max.. Unit Condition
GaAs Emitter
Forward Voltage 1.25 1.5 V I
Reverse Current 0.1 10
µ AV
Capacitance 25 pF V
Photodarlington
Breakdown Voltage
Collector-Emitter
Collector-Base (IL66)
Leakage Current,
Collector-Emitter
BV
BV
I
CEO
CEO
CBO
60
60
V
V
1.0 100 nA V
Capacitance,
Collector-Emitter 3.4 pF V
Coupled Characteristics
Current Transfer Ratio
IL/ILD/ILQ66-1
IL/ILD/ILQ66-2
IL/ILD/ILQ66-3
IL/ILD/ILQ66-4
Saturation Voltage,
Collector-Emitter
CTR
V
CEsat
100
300
400
500
400
500
500
750
%
%
%
%
0.9 1.0 V I
=20 mA
F
=6.0 V
R
=0 V
R
I
=1 mA, I
C
I
=10 µ A
C
=50 V, I
CE
=10 V
CE
I
=2 mA,V
F
I
=2 mA,V
F
I
=0.7 mA, V
F
I
=2 mA, V
F
=10 mA, I
C
=0
F
=0
F
=10 V
CE
=10 V
CE
CE
=5 V
CE
=10 mA
F
=10 V
Rise Time -1, -2, -4 t
Fall Time -1, -2, -4 t
Rise Time -3 t
Fall Time -3 t
R
F
R
F
Figure 1. Forward voltage versus forward current
1.4
1.3
Ta = -55°
1.2
1.1
Ta = 25°
1.0
0.9
Ta = 100°
0.8
VF - Forward Voltage - V
0.7
IF - Forward Current - mA
Figure 2. Normalized non-saturated and saturated
CTRce versus LED curren
2.0
Normalized to:
1.5
1.0
0.5
0.0
NCTRce - Normalized CTRce
Ta = 25°
Vce = 5
IF = 2 m
IF - LED Current - mA
101.1
Vce = 5 V
Vce = 1
100
200
200
200
200
µ sV
µ sI
µ sI
µ sV
=10 V
CC
=2 mA, R
F
=0.7 mA
F
=10 V, R
CC
=100 Ω
C
=100 Ω
L
Figure 3. Normalized non-saturated and saturated
CTRce versus LED current
1.2
Normalized to:
Ta = 25°C
1.0
Vce = 5 V
0.8
IF = 10 m
0.6
0.4
0.2
0.0
NCTRce - Normalized CTRce
100101.1
.1 1 10 100 1000
IF - LED Current - mA
Vce = 5 V
Vce = 1 V
Figure 4. Non-saturated and saturated collector
emitter current versus LED current
5–2
10000
1000
100
10
1
.1
current - mA
.01
Ice - Collector-emitter
.001
.1 1 10 100
IF - LED Current - mA
Vce = 5
Vce = 1
IL/ILD/ILQ66
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