Siemens ILD620GB, ILD620, ILQ620, ILQ620GB Datasheet

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DUAL CHANNEL

QUAD CHANNEL

ILD620/620GB
ILQ620/620GB

AC INPUT PHOTOTRANSISTOR

OPTOCOUPLER

FEATURES

• Identical Channel to Channel Footprint
ILD620 Crosses to TLP620-2
ILQ620 Crosses to TLP620-4

• Current Transfer Ratio (CTR) at I

5 mA

F

ILD/Q620: 50% Min.
ILD/Q620GB: 100% Min.

• Saturated Current Transfer Ratio (CTR
at I

1 mA

F

SAT

)

ILD/Q620: 60% Typ.
ILD/Q620GB: 30% Min.

• High Collector-Emitter Voltage, BV

CEO

=70 V

• Dual and Quad Packages Feature:

- Reduced Board Space

- Lower Pin and Parts Count

- Better Channel to Channel CTR Match

- Improved Common Mode Rejection

• Field-Effect Stable by TRIOS
(TR ansparent IO n S hield )

• Isolation Test Voltage from Double Molded
Package

• Underwriters Lab File #E52744

• VDE 0884 Available with Option 1

Maximum Ratings (Each Channel)
Emitter

Forward Current ......................................... ± 60 mA

Surge Current............................................... ±

1.5 A

Power Dissipation......................................100 mW

Derate from 25 °

C .................................. 1.3 mW/ ° C

Detector

Collector-Emitter Breakdown Voltage .............70 V

Collector Current.......................................... 50 mA

Collector Current (t <1 ms).........................100 mA

Power Dissipation......................................150 mW

Derate from 25 °

C..................................... 2 mW/ ° C

Package

Isolation Test V oltage(t=1 sec.).........5300 VAC

RMS

Package Dissipation, ILD620/GB............. 400 mW

Derate from 25 °

C............................... 5.33 mW/ ° C

Package Dissipation, ILQ620/GB............. 500 mW

Derate from 25 °

C............................... 6.67 mW/ ° C

Creepage................................................7 mm min.

Clearance ...............................................7 mm min.

Isolation Resistance

V

=500 V, T

IO

V

=500 V, T

IO

Storage Temperature.................. –55 ° C to +150 ° C

Operating Temperature............... –55 °

=25 ° C................................ ≥ 10

A

=100 ° C............................. ≥ 10

A

C to +100 ° C

Junction Temperature...................................100 °

12

11

Ω
Ω

C
Soldering Temperature

(2 mm from case bottom)..........................260 °

C

Dimensions in inches (mm)

.268 (6.81)
.255 (6.48)

4° Typ.

.022 (.56)
.018 (.46)

268 (6.81)

268 (6.81)
255 (6.48)

255 (6.48)

4° Typ.

.022 (.56)
.018 (.46)

34

65

.390 (9.91)
.379 (9.63)

.045 (1.14)
.030 (.76)

.100 (2.54) Typ.

.790 (20.07)
.779 (19.77 )

.045 (1.14)
.030 (.76)

.100 (2.54) Typ.

Pin One I.D.

12

87

.150 (3.81)
.130 (3.30)

.040 (1.02)
.030 (.76 )

K=Cathode

1

A/K

2

A/K

3

A/K

4

A/K

.305 Typ.

(7.75) Typ.

10° Typ.

3°–9°

.012 (.30)
.008 (.20)

Pin One I.D.

.150 (3.81)
.130 (3.30)

.040 (1.02)
.030 (.76 )

A/K
A/K
A/K
A/K
A/K
A/K
A/K
A/K

8

Collector

7

Emitter
Collector

6

Emitter

5

.135 (3.43)
.115 (2.92)

K=Cathode

1
2
3
4
5
6
7
8

(7.75) Typ.

3°–9°
.012 (.30)

.008 (.20)

.305 Typ.

10° Typ.

16

Collector

15

Emitter
Collector

14

Emitter

13

Collector

12

Emitter

11

Collector

10

Emitter

9

.135 (3.43
.115 (2.92

DESCRIPTION

The ILD/Q620 and ILD/Q620GB are multi-channel input phototran-sistor
optocouplers that use inverse parallel GaAs IRLED emitters and high gain
NPN silicon phototransistors per channel. These devices are constructed
using over/under leadframe optical coupling and double molded insulation
resulting in a Withstand Test Voltage of 7500 VAC

The LED parameters and the linear CTR characteristics combined with

PEAK

.

the
TRIOS field-effect process make these devices well suited for AC voltage
detection. The ILD/Q620GB with its low IF guaranteed CTR
power dissipation of the AC

voltage detection network that is placed in

CEsat

minimizes

series with the LEDs. Eliminating the phototransistor base connection pro­vides added electrical noise immunity from the transients found in many
industrial control environments.

5–1

F
D

V

F
D

I

V

I

Characteristics

Symbol Min. Typ. Max. Unit Condition

Emitter

Forward Voltage V
Forward Current I
Capacitance C
Thermal Resistance, Junction to Lead R

F

F

O

THJL

Detector

Capacitance C
Collector-Emitter Leakage Current I
Collector-Emitter Leakage Current I
Thermal Resistance, Junction to Lead R

CE
CEO
CEO

THJL

Package T ransfer Characteristics

Channel/Channel CTR Match CTRX/CTRY 1 to 1 3 to 1 I
CTR Symmetry I
Off-State Collector Current I

CE(RATIO)
CE(OFF)

ILD/Q620

Saturated Current Transfer Ratio CTR
Current Transfer Ratio CTR
Collector-Emitter Saturation Voltage V

CEsat
CE

CEsat

ILD/Q620GB

Saturated Current Transfer Ratio CTR
Current Transfer Ratio (Collector-Emitter) CTR
Collector-Emitter Saturation Voltage V

CEsat
CE

CEsat

Isolation and Insulation

Common Mode Rejection, Output High CMH 5000 V/ µ sV
Common Mode Rejection, Output Low CML 5000 V/ µ sV
Common Mode Coupling Capacitance C

CM

Package Capacitance CI-O 0.8 pF V
Insulation Resistance R

S

Channel to Channel Insulation 500 VAC

1 1.15 1.3 V I

2.5 20

µ AV

25 pF V
750

° C/W

6.8 pF V
10 100 nA V
250
500

µ

AT

° C/W

0.5 2 I
110

µ

AV

60 % I

50 80 600 % I

0.4 V I

30 % I
100 200 600 % I

0.4 V I

0.01 pF

12

10

Ω

F

R
F

CE
CE

A

F
CE

F

F
F
F

F
F
F

CM
CM

I-O

V

I-O

= ± 10 mA

=

±

0.7 V

=0 V, f=1 MHz

=5 V, f=1 MHz
=24 V

=85 ° C, V

= ± 5 mA, V

=

= ± 1 mA, V
= ± 5 mA, V
= ± 8 mA, I

= ± 1 mA, V
= ± 5 mA, V
= ± 1 mA, I

(I

=–5 mA)/I

F

±

0.7 V, V

=50 V
=50 V

P-P
P-P

CE

CE

CE

CE
CE

CE

CE
CE

CE

, R

, R

=0 V, f=1 MHz
=500 V

=24 V

=5 V

(=+5 mA)

F

=24 V

=0.4 V
=5 V

=2.4 mA

=0.4 V
=5 V

=0.2 mA

=1 k Ω , I

L

=1 k Ω , I

L

=0 mA

F

=10 mA

F

Switching Times

Figure 1. Non-saturated switching timing

IF=10 mA

=10 KHz,

F=50%

VCC=5 V

V

O

RL=75 Ω

Figure 2. Saturated switching timing

=10 KHz,

F=50%

=10 mA

F

VCC=5

R

L

V

O

Figure 3. Non-saturated switching timing

F

t

PLH

0

t

t

R

D

5–2

t

PHL

t

S

50%

t

F

ILD/Q620/GB