Siemens FP201L100 Datasheet
Differential Magnetoresistive Sensor FP 201 L 100
Features
• Extremely high output
voltage
• 2 independently biased
magnetic circuits
• Robust housing
• Signal amplitude
independent of operating
speed
• Screw mounting possible
Typical applications
• Detection of speed
• Detection of position
• Detection of sense of rotation
Dimensions in mm
Type Ordering Code
FP 201 L 100 Q65210-L101
The differential magnetoresistive sensor FP 201 L 100 consists of two magnetically
biased magneto resistors made from L-type InSb/NiSb, which in their unbiased state
each have a basic resistance of about 125 Ω. They are series coupled as a voltage
divider and are encapsuled in plastic as protection against mechanical stresses. This
magnetically actuated sensor can be implemented as a direction dependent contactless
switch where it shows a voltage change of about 1.3 V/mm in its linear region.
Semiconductor Group 1 07.96
FP 201 L 100
Maximum ratings
Parameter Symbol Value Unit
Operating temperature
Storage temperature
Power dissipation
Supply voltage
1)
2)
Insulation voltage between
terminals and casing
Thermal conductivity
Characteristics (
T
= 25 °C)
A
Nominal supply voltage
Total resistance, (δ = ∞,
4)
3)
(δ = ∞)
Center symmetry
Offset voltage
(at V
and δ = ∞)
IN N
I ≤ 1 mA) R
Open circuit output voltage
(V
and δ = 0.5 mm)
IN N
5)
T
T
P
V
V
G
G
V
M
V
V
A
stg
tot
IN
I
thcase
thA
IN N
1-3
0
out pp
– 25 / + 100 °C
– 25 / + 110 °C
600 mW
10 V
> 100 V
≥ 10
≥ 5
mW/K
mW/K
5V
700…1400 Ω
≤ 10 %
≤ 130 mV
> 2.2 V
Cut-off frequency
f
c
> 7 kHz
This sensor is operated by a permanent magnet. Using the arrangement as shown in
Fig. 1, the permanent magnet increases the internal biasing field through the righthand
side magneto resistor (connections 2-3), and reduces the field through the left side
magneto resistor (connections 1-2). As a result the resistance value of MR
while that of MR
decreases. When the permanent magnet is moved from left to right
1-2
increases
2-3
the above-mentioned process operates in reverse.
1) Corresponding to diagram P
2) Corresponding to diagram
3)
4) Corresponding to measuring circuit in Fig. 3
5) Corresponding to measuring circuit in Fig. 3 and arrangement as shown in Fig. 2
M
R
---------------------------------=
12–
R
–
12–
R
23–
= f(T
tot
V
IN
case
= f(T)
× 100% for R
)
> R
1-2
2-3
Semiconductor Group 2
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