Siemens CNY17F-4, CNY17F-3, CNY17F-2, CNY17F-1 Datasheet

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CNY17F SERIES

PHOTOTRANSISTOR

NO BASE CONNECTION

OPTOCOUPLER

FEATURES

• High Current Transfer Ratio
CNY17F-1, 40-80%
CNY17F-2, 63-125%
CNY17F-3, 100-200%
CNY17F-4, 160-320%

• Breakdown V oltage, 5300 VA C

RMS

• High Collector-Emitter Voltage

•V

CEO

=70 V

• No Base Terminal Connection for Improved
Common Mode Interface Immunity

• Field-Effect Stable by TRIOS*

• Long Term Stability

• Industry Standard Dual-in-Line Package

• Underwriters Lab File #E52744

V

• VDE #0884, Available with Option 1

DE

Maximum Ratings (T

=25 ° C)

A

Emitter

Reverse Voltage................................................ 6 V

DC Forward Current .................................... 60 mA

Surge Forward Current (t ≤

10 µ s) ...................2.5 A

Total Power Dissipation ............................ 100 mW

Detector

Collector-Emitter Breakdown Voltage ............. 70 V

Collector Current ..........................................50 mA

Collector Current (t ≤

1 ms)......................... 100 mA

Total Power Dissipation ............................ 150 mW

Package

Isolation Test V oltage (between emitter and detector

referred to standard climate 23/50

DIN 50014) ....................................5300 VAC

RMS

Creepage.................................................... >7 mm

Clearance................................................... >7 mm

Isolation Thickness between Emitter

and Detector......................................... ≥

0.4 mm

Comparative Tracking Index per

DIN IEC 112/VDE 0303, part 1 ......................175

Isolation Resistance (V

=500 V) .................≥ 10

10

11

Ω

Storage Temperature Range............–55 to +150 ° C

Ambient Temperature Range...........–55 to +100 °

Junction Temperature ...................................100 °

C
C

Soldering Temperature

(max. 10 s, dip soldering:
distance to seating plane ≥

* TRIOS—TR

ansparent IO n Sh ield

1.5 mm)..........260 ° C

Dimensions in inches (mm)

Pin One ID

12

5

6

.100 (2.54) typ.

Cathode

.130 (3.30)
.150 (3.81)

.020 (.051) min.

.031 (0.80)
.035 (0.90)

Anode

NC

1

2

3

.300 (7.62)

18° typ.

.010 (.25)
.014 (.35)

.300 (7.62)
.347 (8.82)

typ.

6

Base

5

Collector

4

Emitter

.110 (2.79
.150 (3.81

248 (6.30)
256 (6.50)

.039

(1.00)

Min.

4°

typ.

.018 (0.45)
.022 (0.55)

3

4

.335 (8.50)
.343 (8.70)

DESCRIPTION

The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared
emitting diode optically coupled to a silicon planar phototransistor
detector in a plastic plug-in DIP-6 package.

The coupling device is suitable for signal transmission between two
electrically separated circuits. The potential difference between the cir­cuits to be coupled is not allowed to exceed the maximum permissible
reference voltages.
In contrast to the CNY17 Series, the base terminal of the F type is not
connected, resulting in a substantially improved common-mode interfer­ence immunity.

Characteristics (T

Emitter

Forward Voltage V
Breakdown Voltage V
Reverse Current I
Capacitance C
Thermal Resistance R

Detector

Capacitance C

Thermal Resistance R

Package

Saturation Voltage,
Collector-Emitter

Coupling
Capacitance

=25 ° C)

A

Symbol Unit Condition

F
BR

R

O

thJA

CE

thJA

V

CEsat

C

C

1.25 ( ≤ 1.65) V I
6VI

≥≥

≥

0.01 ( ≤ 10) µ AV

25 pF V
750 K/W

5.2 pF V

500 K/W

0.25 ( ≤ 0.4) V I

0.6 pF

=60mA

F

=10 µ A

R

=6 V

R

=0 V, f=1 MHz

R

=5 V, f=1

CE

MHz

=10 mA

F

I

=2.5 mA

C

5–1

V

V

)

=0 °

)

)

Current T ransfer Ratio (I

/I

at V

C

F

=5 V, 25 ° C)

CE

and Collector-Emitter Leakage Current by dash number

-1 -2 -3 -4 Unit

I

/I

at V

at V

CE

CE

=5 V

=5 V

C

F

(I

=10 mA) 40–80 63-125 100–200 160–320 %

F

I

/I

C

F

(I

=1 mA) 30 (>13) 45 (>22) 70 (>34) 90 (>56) %

F

Collector-Emitter
Leakage Current
(V

=10 V) (I

CE

CEO

2 ( ≤ 50) 2 ( ≤ 50) 5 ( ≤ 100) 5 ( ≤ 100) nA

)

Figure 1. Linear operation (without saturation)

I

F

47 Ω

I

=10 mA, V

F

CC

=5 V, T

Load Resistance R
Turn-On Time t
Rise Time t
Turn-Off Time t
Fall Time t
Cut-Off Frequency f

RL=75 Ω

=25 ° C

A

L

ON

R

OFF

f

CO

I

C

V

=5

CC

75

3.0

2.0

2.3

2.0

Ω
µ s
µ s
µ s
µ s

250 kHz

Figure 3. Current transfer ratio versus diode
current (T

=–25 ° C, V

A

CE

=5 V) I

/I

=f (I

C

F

F

Figure 4. Current transfer ratio versus diode
current (T

C, V

A

CE

=5 V) I

/I

=f (I

C

F

F

Figure 2. Switching operation (with saturation)

I

F

47 Ω

Turn-On Time t
Rise Time t
Turn-Off Time t
Fall Time t

1 KΩ

=5

V

CC

-1
=20 mA)

(I

F

3.0 4.2 6.0

ON

2.0 3.0 4.6

R

18 23 25

OFF

11 14 15

F

-2 and -3
(I

=10 mA)

F

-4
(I

=5 mA)

F

µ s
µ s
µ s
µ s

Figure 5. Current transfer ratio versus diode
current (T

=25 ° C, V

A

CE

=5 V) I

/I

=f (I

C

F

F

5–2

CNY17F