Siemens BXY42BA-3 Datasheet

Silicon PIN Diode BXY 42BA-3
Fast switching
In stripline package other lead configurations available
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Ordering CodeMarking
Pin Configuration
Cathode: black dot,
Package
1)
heat sink
Maximum Ratings Parameter Symbol Values Unit
Reverse voltage V
R 50 V
Peak forward current, tp =1 µs IFRM 5A Total power dissipation P
tot 350 mW
Junction temperature Tj 175 ˚C Storage temperature range T
stg – 55 … + 150
Operating temperature range Top – 55 … + 150
Thermal Resistance
Junction - ambient Rth JA 450 K/W
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
Electrical Characteristics
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
BXY 42BA-3 BXY 42BA-3
Parameter Symbol
V
(BR) 50
R = 10 µA
I
R ––5
VR = 40 V
t
s –4–
F = 10 mA, VR = 10 V
C
T 0.24
R = 20 V, f = 1 MHz
V
τL
F = 10 mA, IR = 6 mA
r
f 1.5
f = 100 MHz, IF = 10 mA
min. typ. max.
–40–
UnitValues
VBreakdown voltage
nAReverse current
nsStorage time
pFDiode capacitance
nsCharge carrier life time
Forward resistance
Semiconductor Group 2
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