Siemens BTS933 Datasheet

)

HITFETBTS 933

Smart Lowside Power Switch

Features

• Logic Level Input

• Input Protection (ESD)

Product Summary

Drain source voltage On-state resistance

• Thermal Shutdown

• Overload protection

• Short circuit protection

Nominal load current A Clamping energy mJ

• Overvoltage protection

• Current limitation

• Maximum current adjustable with external resistor

• Current sense

• Status feedback with external input resistor

• Analog driving possible

Application

• All kinds of resistive, inductive and capacitive loads in switching or linear applications

• µC compatible power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description

V

DS

R

DS(on

I

D(lim)

I

D(ISO

E

AS

50

3 7

2000

V60 mΩ

ACurrent limit

N channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions.

V

Drain

Source

HITFET

LOAD

3

5



1

IN

CC

4

R

CC

ESD

Semiconductor Group

2

NC

dv/dt

limitation limitation

Overload protection

Current

Over-

temperature

protection

Overvoltage

protection

Short circuit

protection

Page 1

bb

+

M

14.07.1998

Maximum Ratings at Tj = 25 °C unless otherwise specified

j

BTS 933

Parameter

Drain source voltage Drain source voltage for short circuit protection

R

= 0 Ω

CC

R

V

CC

≤ 10V

IN

V

IN

1)

> 10V

without Continuous input current

-0.2V ≤

V

< -0.2V or

IN

Operating temperature Storage temperature Power dissipation

T

= 25 °C

C

Unclamped single pulse inductive energy

I

D(ISO)

= 7 A

Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993

Symbol UnitValue

V

DS

V

DS(SC)

60 V

15

50

I

IN

no limit

I

| ≤ 2

|

IN

T T P

E

V

stg

tot

AS

ESD

- 55 ... +150 90 W

2000 mJ

3000 V

mA

°C- 40 ... +150

Load dump protection

V

=low or high;

IN

= 400 ms,

t

d

= 400 ms,

t

d

R

= 2 Ω,

I

R

= 2 Ω,

I

V

=13.5 V

A

V

LoadDump

I

=0,5*7A

D

I

= 7A

D

2)

=

V

+

V

A

S

V

LD

90

74

DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56

Thermal resistance

junction - case: junction - ambient: SMD version, device on PCB:

1

A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)

2

V

Loaddump

3

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical

without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Semiconductor Group

3)

Page 2

R R R

thJC thJA thJA

1.4 K/W 75 45

14.07.1998

Electrical Characteristics

BTS 933

Parameter

Characteristics

T

= - 40 ...+ 150°C,

j

V

= 32 V,

DS

I

= 1,4 mA

D

T

j

Input current - normal operation,

V

= 10 V

IN

Input current - current limitation mode,

V

= 10 V

IN

Input current - after thermal shutdown,

V

= 10 V

IN

I

= 10 mA

D

= -40...+150 °C,

V

= 0 V

IN

I

<

D

I

D(lim)

I

:

=

I

D

=0 A:

D

D(lim)

Input holding current after thermal shutdown

T

= 25 °C

j

T

= 150 °C

j

Symbol UnitValues

60

-Off state drain current

1.3Input threshold voltage

-

60

1000

:

V

DS(AZ)

I

DSS

V

IN(th)

I

IN(1)

I

IN(2)

I

IN(3)

I

IN(H)

500

300

max.typ.min.at Tj=25°C, unless otherwise specified

-Drain source clamp voltage

-

73 V

10 µA

1.7 2.2

30 55 µA

150

2500

-

350

4000

-

V

On-state resistance

I

= 7 A,

D

I

= 7 A,

D

V

IN

V

IN

= 5 V, = 5 V,

T T

On-state resistance

I

= 7 A,

D

I

= 7 A,

D

V

IN

V V

= 10 V,

IN

= 10 ,

IN

V

DS

T

= 0.5 V,

Semiconductor Group

= 25 °C

j

= 150 °C

j

T

= 25 °C

j

= 150

j

T

= 85 °C

C

Page 3

R

DS(on)

R

DS(on)

I

D(ISO)

-

7Nominal load current (ISO 10483)

50

90

40

75

-

60

120

50

100

- A

mΩ

14.07.1998

Electrical Characteristics

j

BTS 933

Parameter

Symbol Values Unit

at Tj=25°C, unless otherwise specified min. typ. max.

Characteristics

Initial peak short circuit current limit

V

= 10 V,

IN

V

DS

= 12 V

Current limit 1)

V

= 10 V,

IN

T

= -40...+150 °C, without

j

V

= 10 V,

IN

T

= -40...+150 °C,

j

V

DS

V

DS

= 12 V,

R

CC

t

= 350 µs,

m

R

CC

t

= 350 µs,

m

= 0 Ω

I

D(SCp)

I

D(lim)

- 125 - A

3

60

7

80

12

100

Dynamic Characteristics

Turn-on time

R

= - Ω,

L

V

IN

Turn-off time

R

= - Ω,

L

V

IN

V

to 90%

IN

= 0 to 10 V,

V

to 10%

IN

= 10 to 0 V,

V

Slew rate on 70 to 50%

R

= - Ω,

L

V

= 0 to 10 V,

IN

V

Slew rate off 50 to 70%

R

= - Ω,

L

V

= 10 to 0 V,

IN

V

I

D

= 12 V

bb

I

D

= 12 V

bb

V

bb

= 12 V

bb

V

bb

= 12 V

bb

:

t

on

t

off

-dVDS/dt

/dt

DS

off

-

on

-

40 100-

70 170

31-

1 3dV

µs

V/µs

Protection Functions

°CThermal overload trip temperature 165 -150 mJ

-

Unclamped single pulse inductive energy

I

= 7 A,

D

I

= 7 A,

D

T

= 25 °C,

j

T

= 150 °C,

j

V

bb

V

= 32 V

bb

T

t

E

AS

2000

450

-

Inverse Diode

Inverse diode forward voltage

I

= 5*7A,

F

1

Device switched on into existing short circuit (see diagram Determination of I

might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition

Semiconductor Group

t

= 300 µs,

m

V

= 0 V

IN

Page 4

V

SD

. Dependant on the application, these values

D(lim)

1.08 -- V

14.07.1998