Siemens BTS725L1 Datasheet

PROFET® Preliminary BTS 725 L1
Smart Two Channel Highside Power Switch
Product Summary
Features
Overload protection
Current limitation
Short-circuit protection
Thermal shutdown
Overvoltage protection
(including load dump)
Reverse battery protection
Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V
Electrostatic discharge (ESD) protection
1
)
protection
bb
Application
µC compatible power switch with diagnostic feedback
for 12 V DC grounded loads
Most suitable for resistive and lamp loads
Replaces electromechanical relays and discrete circuits
Overvoltage Protection Operating voltage
active channels: one two parallel On-state resistance Nominal load current Current limitation
R
ON
I
L(NOM)
I
L(SCr)
V
bb(AZ)
V
bb(on)
5.0 ... 24 V
43 V
60 30
4.0 6.0 A 17 17 A
m
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.
Pin Definitions and Functions
Pin Symbol Function
1,10, 11,12, 15,16, 19,20 3 IN1 Input 1,2, activates channel 1,2 in case of 7 IN2 logic high signal 17,18 OUT1 Output 1,2, protected high-side power output 13,14 OUT2 of channel 1,2. Design the wiring for the max.
4 ST1 Diagnostic feedback 1,2 of channel 1,2, 8 ST2 open drain, low on failure 2 GND1 Ground 1 of chip 1 (channel 1) 6 GND2 Ground 2 of chip 2 (channel 2) 5,9 N.C. Not Connected
V
bb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance
short circuit current
Pin configuration
Vbb1
GND1 2 19 V
IN1 3 18 OUT1
ST1 4 17 OUT1
N.C. 5 16 V
GND2 6 15 V
IN2 7 14 OUT2
ST2 8 13 OUT2
N.C. 9 12 V
Vbb10 11 V
(top view)
20 V
bb bb
bb bb
bb bb
)
1
With external current limit (e.g. resistor R connection, reverse load current limited by connected load.
=150 Ω) in GND connection, resistor in series with ST
GND
Semiconductor Group 1 03.96
Block diagram
Two Channels; Open Load detection in on state;
Voltage
source
V
Logic
Voltage
Overvoltage
protection
Charge pump
Current
limit
Gate
protection
Preliminary BTS 725 L1
+ V
bb
Leadframe
OUT1
17,18
3
4
1
Signal GND
Chip 1
7
IN1
ST1
GND1
IN2
ESD
sensor
Logic
Level shifter
Rectifier
Open load
detection
Chip 1
Logic and protection circuit of chip 2
(equivalent to chip 1)
Temperature
sensor
R
O1
GND1
+ V
Leadframe
bb
OUT2
13,14
Load
Load GND
Load
ST2
8
R
O2
GND2
6
GND2
Load GND
Signal GND
Chip 2
Chip 2
PROFET
Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
Maximum Ratings
at
= 25°C unless otherwise specified
j
T
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection
T
= -40 ...+150°C
j,start
V V
bb bb
43 V 24 V
Semiconductor Group 2
Preliminary BTS 725 L1
)
at
T
Maximum Ratings Parameter Symbol Values Unit
= 25°C unless otherwise specified
j
Load current (Short-circuit current, see page 5)
)
Load dump protection
)
3
R
= 2 Ω,
I
t
= 200 ms; IN = low or high,
d
each channel loaded with
2
V
LoadDump
R
= 3.4 Ω,
L
=
U
+
V
,
A
U
s
Operating temperature range Storage temperature range Power dissipation (DC) (all channels active)
5
T T
Electrostatic discharge capability (ESD (Human Body Model)
Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagram page 8
Thermal resistance junction - soldering point junction - ambient
5)
5),6)
each channel:
one channel active:
all channels active:
= 13.5 V
A
= 25°C:
a
= 85°C:
a
I
L
V
Load dump
T
j
T
stg
P
tot
V
ESD
V
IN
I
IN
I
ST
R
thjs
R
thja
self-limited A
)
4
-40 ...+150
60 V
°C
-55 ...+150
3.7
W
1.9
1.0 kV
-10 ... +16 V ±2.0
mA
±5.0
12 K/W 41 34
Electrical Characteristics
Parameter and Conditions,
at Tj = 25 °C,
V
= 12 V unless otherwise specified
bb
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT) IL = 2 A each channel,
two parallel channels,
)
2
Supply voltages higher than V 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated.
3)
R
= internal resistance of the load dump test pulse generator
I
4)
V
Load dump
)
5
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air. See page 14
)
6
Soldering point: upper side of solder edge of device pin 15. See page 14
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
each of the two channels
Symbol Values Unit
min typ max
T
= 25°C:
j
T
= 150°C:
j
T
= 25°C:
j
require an external current limit for the GND and status pins, e.g. with a
bb(AZ)
R
ON
2
(one layer, 70µm thick) copper area for V
--
50
100
25
120
60
30
m
bb
Semiconductor Group 3
Preliminary BTS 725 L1
)
j
Parameter and Conditions,
at Tj = 25 °C,
V
= 12 V unless otherwise specified
bb
each of the two channels
Nominal load current one channel active:
two parallel channels active:
Device on PCB5),
T
= 85°C,
a
T
≤ 150°C
j
Output current while GND disconnected or pulled
up; V
Turn-on time Turn-off time to 10%
R
= 12
L
= 30 V,
bb
,
V
= 0, see diagram page 9
IN
T
=-40...+150°C
j
to 90%
V V
OUT OUT
Slew rate on 10 to 30%
V
OUT
R
= 12
,
L
,
T
=-40...+150°C:
j
Slew rate off 70 to 40%
V
OUT
,
R
= 12
L
,
T
=-40...+150°C:
j
Operating Parameters
)
Operating voltage Undervoltage shutdown Undervoltage restart
7
T
=-40...+150°C:
j
T
=-40...+150°C:
j
T
=-40...+150°C:
j
Undervoltage restart of charge pump see diagram page 13
T
=-40...+150°C:
j
Undervoltage hysteresis
V
bb(under)
Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection
I
= 40 mA
bb
Standby current, all channels off V
= 0
IN
Leakage output current (included in
IN
V
Operating current 9),
I
GND
= 0
=
I
GND1
=
V
+
bb(u rst)
I
GND2
-
V
,
V
8
IN
bb(under)
)
= 5V,
T
=-40...+150°C:
j
T
=-40...+150°C:
j
T
=-40...+150°C:
j
T
=-40...+150°C:
j
T
T
j
I
bb(off
=-40...+150°C
T
one channel on:
=25°C
j
=150°C:
)
two channels on:
Symbol Values Unit
min typ max
: :
:
I
I
t t
dV/dt
-dV/dt
V V V V
V V
V
I
I
I
L(NOM)
L(GNDhigh)
on off
on
off
bb(on) bb(under) bb(u rst) bb(ucp)
V
bb(under)
bb(over) bb(o rst)
V
bb(over)
bb(AZ)
bb(off)
L(off)
GND
3.6
5.5
4.0
6.0
-- -- 10 mA
80 80
200 230
400 450
0.1 -- 1 V/µs
0.1 -- 1 V/µs
5.0 --
3.5 --
24 V
5.0 V
-- -- 5.0 V
-- 5.6 7.0 V
-- 0.2 -- V
24 --
34 V
23 -- -- V
-- 0.5 -- V
42 47 -- V
--
--
20 29
50 56
-- -- 12
--
--
1.8
3.6
3.57mA
-- A
µ
µ
µ
s
A
A
7)
At supply voltage increase up to
8)
)
9
see also Add
V
I
, if
ST
in circuit diagram on page 8.
ON(CL)
I
> 0
ST
V
= 5.6 V typ without charge pump,
bb
Semiconductor Group 4
V
OUT
V
- 2 V
bb
Preliminary BTS 725 L1
Parameter and Conditions,
at Tj = 25 °C,
V
= 12 V unless otherwise specified
bb
each of the two channels
Protection Functions
Initial peak short circuit current limit,
diagrams, page 11)
each channel,
(see timing
two parallel channels
Repetitive short circuit current limit,
T
=
T
each channel
j
jt
two parallel channels
(see timing diagrams, page 11)
Initial short circuit shutdown time
T T
(see page 10 and timing diagrams on page 11)
Thermal overload trip temperature Thermal hysteresis
=-40°C:
j
T
=25°C:
j
T
=+150°C:
j
T
=-40°C:
j,start
= 25°C:
j,start
Symbol Values Unit
min typ max
I
L(SCp)
27 20 12
37 30 18
47 40 25
twice the current of one channel
I
L(SCr)
t
off(SC)
T
jt
T
jt
--
--
--
--
17 17
--
--
5
----ms
4
150 -- -- °C
-- 10 -- K
A
A
Reverse Battery
)
Reverse battery voltage Drain-source diode voltage
= - 4.0 A,
L
I
j
= +150°C
T
10
(V
out
> Vbb)
-
V
bb
-
V
ON
-- -- 32 V
-- 610 -- mV
Diagnostic Characteristics
Open load detection current,
Open load detection voltage
(on-condition)
each channel,
T
two parallel channels
)
11
=-40..+150°C:
T
j
= -40°C:
T
j
= 25°C:
T
j
= +150°C:
j
I
L (OL)
V
OUT(OL)
4
10 10 10
--
800
--
600
--
600
twice the current of one channel
234V
Internal output pull down
(OUT to GND), V
)
10
Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8).
11)
External pull up resistor required for open load detection in off state.
OUT
= 5 V
=-40..+150°C:
T
j
R
O
41030k
mA
Semiconductor Group 5
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