Siemens BTS725L1 Datasheet

PROFET® Preliminary BTS 725 L1

Smart Two Channel Highside Power Switch

Product Summary

Features

•

Overload protection

•

Current limitation

•

Short-circuit protection

•

Thermal shutdown

•

Overvoltage protection

(including load dump)

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown

with auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

1

)

protection

bb

Application

•

µC compatible power switch with diagnostic feedback

for 12 V DC grounded loads

•

Most suitable for resistive and lamp loads

•

Replaces electromechanical relays and discrete circuits

Overvoltage Protection Operating voltage

active channels: one two parallel On-state resistance Nominal load current Current limitation

R

ON

I

L(NOM)

I

L(SCr)

V

bb(AZ)

V

bb(on)

5.0 ... 24 V

43 V

60 30

4.0 6.0 A 17 17 A

m

Ω

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

Pin Definitions and Functions

Pin Symbol Function

1,10, 11,12, 15,16, 19,20 3 IN1 Input 1,2, activates channel 1,2 in case of 7 IN2 logic high signal 17,18 OUT1 Output 1,2, protected high-side power output 13,14 OUT2 of channel 1,2. Design the wiring for the max.

4 ST1 Diagnostic feedback 1,2 of channel 1,2, 8 ST2 open drain, low on failure 2 GND1 Ground 1 of chip 1 (channel 1) 6 GND2 Ground 2 of chip 2 (channel 2) 5,9 N.C. Not Connected

V

bb

Positive power supply voltage. Design the

wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance

short circuit current

Pin configuration

Vbb1

GND1 2 19 V

IN1 3 18 OUT1

ST1 4 17 OUT1

N.C. 5 16 V

GND2 6 15 V

IN2 7 14 OUT2

ST2 8 13 OUT2

N.C. 9 12 V

Vbb10 11 V

•

(top view)

20 V

bb bb

)

1

With external current limit (e.g. resistor R connection, reverse load current limited by connected load.

=150 Ω) in GND connection, resistor in series with ST

GND

Semiconductor Group 1 03.96

Block diagram

Two Channels; Open Load detection in on state;

Voltage

source

V

Logic

Voltage

Overvoltage

protection

Charge pump

Current

limit

Gate

protection

Preliminary BTS 725 L1

+ V

bb

Leadframe

OUT1

17,18

3

4

1

Signal GND

Chip 1

7

IN1

ST1

GND1

IN2

ESD

sensor

Logic

Level shifter

Rectifier

Open load

detection

Chip 1

Logic and protection circuit of chip 2

(equivalent to chip 1)

Temperature

sensor

R

O1

GND1

+ V

Leadframe

bb

OUT2

13,14

Load

Load GND

Load

ST2

8

R

O2

GND2

6

GND2

Load GND

Signal GND

Chip 2

PROFET



Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20

Maximum Ratings

at

= 25°C unless otherwise specified

j

T

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection

T

= -40 ...+150°C

j,start

V V

bb bb

43 V 24 V

Semiconductor Group 2

Preliminary BTS 725 L1

)

at

T

Maximum Ratings Parameter Symbol Values Unit

= 25°C unless otherwise specified

j

Load current (Short-circuit current, see page 5)

)

Load dump protection

)

3

R

= 2 Ω,

I

t

= 200 ms; IN = low or high,

d

each channel loaded with

2

V

LoadDump

R

= 3.4 Ω,

L

=

U

+

V

,

A

U

s

Operating temperature range Storage temperature range Power dissipation (DC) (all channels active)

5

T T

Electrostatic discharge capability (ESD (Human Body Model)

Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagram page 8

Thermal resistance junction - soldering point junction - ambient

5)

5),6)

each channel:

one channel active:

all channels active:

= 13.5 V

A

= 25°C:

a

= 85°C:

a

I

L

V

Load dump

T

j

T

stg

P

tot

V

ESD

V

IN

I

IN

I

ST

R

thjs

R

thja

self-limited A

)

4

-40 ...+150

60 V

°C

-55 ...+150

3.7

W

1.9

1.0 kV

-10 ... +16 V ±2.0

mA

±5.0

12 K/W 41 34

Electrical Characteristics

Parameter and Conditions,

at Tj = 25 °C,

V

= 12 V unless otherwise specified

bb

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT) IL = 2 A each channel,

two parallel channels,

)

2

Supply voltages higher than V 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated.

3)

R

= internal resistance of the load dump test pulse generator

I

4)

V

Load dump

)

5

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air. See page 14

)

6

Soldering point: upper side of solder edge of device pin 15. See page 14

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

each of the two channels

Symbol Values Unit

min typ max

T

= 25°C:

j

T

= 150°C:

j

T

= 25°C:

j

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

R

ON

2

(one layer, 70µm thick) copper area for V

--

50

100

25

120

60

30

mΩ

bb

Semiconductor Group 3

Preliminary BTS 725 L1

)

j

Parameter and Conditions,

at Tj = 25 °C,

V

= 12 V unless otherwise specified

bb

each of the two channels

Nominal load current one channel active:

two parallel channels active:

Device on PCB5),

T

= 85°C,

a

T

≤ 150°C

j

Output current while GND disconnected or pulled

up; V

Turn-on time Turn-off time to 10%

R

= 12

L

= 30 V,

bb

Ω

,

V

= 0, see diagram page 9

IN

T

=-40...+150°C

j

to 90%

V V

OUT OUT

Slew rate on 10 to 30%

V

OUT

R

= 12

,

L

Ω

,

T

=-40...+150°C:

j

Slew rate off 70 to 40%

V

OUT

,

R

= 12

L

Ω

,

T

=-40...+150°C:

j

Operating Parameters

)

Operating voltage Undervoltage shutdown Undervoltage restart

7

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

Undervoltage restart of charge pump see diagram page 13

T

=-40...+150°C:

j

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

= 40 mA

bb

Standby current, all channels off V

= 0

IN

Leakage output current (included in

IN

V

Operating current 9),

I

GND

= 0

=

I

GND1

=

V

+

bb(u rst)

I

GND2

-

V

,

V

8

IN

bb(under)

)

= 5V,

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

j

I

bb(off

=-40...+150°C

T

one channel on:

=25°C

j

=150°C:

)

two channels on:

Symbol Values Unit

min typ max

: :

:

I

t t

dV/dt

-dV/dt

V V V V

∆

V V

∆

V

I

L(NOM)

L(GNDhigh)

on off

on

off

bb(on) bb(under) bb(u rst) bb(ucp)

V

bb(under)

bb(over) bb(o rst)

V

bb(over)

bb(AZ)

bb(off)

L(off)

GND

3.6

5.5

4.0

6.0

-- -- 10 mA

80 80

200 230

400 450

0.1 -- 1 V/µs

5.0 --

3.5 --

24 V

5.0 V

-- -- 5.0 V

-- 5.6 7.0 V

-- 0.2 -- V

24 --

34 V

23 -- -- V

-- 0.5 -- V

42 47 -- V

--

20 29

50 56

-- -- 12

--

1.8

3.6

3.57mA

-- A

µ

s

A

7)

At supply voltage increase up to

8)

)

9

see also Add

V

I

, if

ST

in circuit diagram on page 8.

ON(CL)

I

> 0

ST

V

= 5.6 V typ without charge pump,

bb

Semiconductor Group 4

V

OUT

≈

V

- 2 V

bb

Preliminary BTS 725 L1

Parameter and Conditions,

at Tj = 25 °C,

V

= 12 V unless otherwise specified

bb

each of the two channels

Protection Functions

Initial peak short circuit current limit,

diagrams, page 11)

each channel,

(see timing

two parallel channels

Repetitive short circuit current limit,

T

=

T

each channel

j

jt

two parallel channels

(see timing diagrams, page 11)

Initial short circuit shutdown time

T T

(see page 10 and timing diagrams on page 11)

Thermal overload trip temperature Thermal hysteresis

=-40°C:

j

T

=25°C:

j

T

=+150°C:

j

T

=-40°C:

j,start

= 25°C:

j,start

Symbol Values Unit

min typ max

I

L(SCp)

27 20 12

37 30 18

47 40 25

twice the current of one channel

I

L(SCr)

t

off(SC)

T

jt

∆T

jt

--

17 17

--

5

----ms

4

150 -- -- °C

-- 10 -- K

A

Reverse Battery

)

Reverse battery voltage Drain-source diode voltage

= - 4.0 A,

L

I

j

= +150°C

T

10

(V

out

> Vbb)

-

V

bb

-

V

ON

-- -- 32 V

-- 610 -- mV

Diagnostic Characteristics

Open load detection current,

Open load detection voltage

(on-condition)

each channel,

T

two parallel channels

)

11

=-40..+150°C:

T

j

= -40°C:

T

j

= 25°C:

T

j

= +150°C:

j

I

L (OL)

V

OUT(OL)

4

10 10 10

--

800

--

600

--

600

twice the current of one channel

234V

Internal output pull down

(OUT to GND), V

)

10

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8).

11)

External pull up resistor required for open load detection in off state.

OUT

= 5 V

=-40..+150°C:

T

j

R

O

41030k

mA

Ω

Semiconductor Group 5