Siemens BTS712N1 Datasheet

Smart Four Channel Highside Power Switch

)

Product Summary

Features

•

Overload protection

•

Current limitation

•

Short-circuit protection

•

Thermal shutdown

•

Overvoltage protection

(including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown

with auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in OFF-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

1

)

protection

bb

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitive loads

•

Replaces electromechanical relays and discrete circuits

Overvoltage Protection

Operating voltage

active channels: one On-state resistance Nominal load current

Current limitation

R

ON

I

L(NOM

I

L(SCr)

PROFET® BTS 712 N1

V

bb(AZ)

V

bb(on)

two parallel four parallel

5.0 ... 34 V

200 100 50

1.9 2.8 4.4 444

43 V

m

Ω

A A

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

Pin Definitions and Functions

Pin Symbol Function

1,10, 11,12, 15,16, 19,20 3 IN1 Input 1 .. 4, activates channel 1 .. 4 in case of 5 IN2 logic high signal 7 IN3 9 IN4 18 OUT1 Output 1 .. 4, protected high-side power output 17 OUT2 of channel 1 .. 4. Design the wiring for the 14 OUT3 max. short circuit current 13 OUT4 4 ST1/2 Diagnostic feedback 1/2 of channel 1 and

8 ST3/4 Diagnostic feedback 3/4 of channel 3 and

2 GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2) 6 GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)

V

bb

Positive power supply voltage. Design the

wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low thermal resistance

channel 2, open drain, low on failure

channel 4, open drain, low on failure

Pin configuration

Vbb1

GND1/2 2 19 V

IN1 3 18 OUT1

ST1/2 4 17 OUT2

IN2 5 16 V

GND3/4 6 15 V

IN3 7 14 OUT3

ST3/4 8 13 OUT4

IN4 9 12 V Vbb10 11 V

•

(top view)

20 V

bb bb

)

1

With external current limit (e.g. resistor R connection, reverse load current limited by connected load.

=150 Ω) in GND connection, resistor in series with ST

GND

Semiconductor Group 1 06.96

Block diagram

Four Channels; Open Load detection in off state;

Voltage

source

V

Logic

Voltage

sensor

3

IN1 IN2

5 4

ST1/2

ESD

Logic

Overvoltage

protection

Level shifter

Rectifier 1

Charge

pump 1

Charge

pump 2

Current

limit 1

Current

limit 2

Gate 1

protection

Limit for

unclamped

ind. loads 1

Open load

Short to Vbb

detection 1

Gate 2

protection

Channel 1

Temperature

sensor 1

BTS 712 N1

+ V

bb

Leadframe

OUT1

18

Signal GND

Chip 1

Signal GND

Chip 2

2

8

6

7 9

GND1/2

IN3 IN4

ST3/4

GND3/4

Chip 1

PROFET

Chip 2

Level shifter

Rectifier 2

unclamped

ind. loads 2

Open load

Short to Vbb

detection 2

Logic and protection circuit of chip 2

(equivalent to chip 1)



Limit for

Channel 2

Temperature

sensor 2

Channel 3

Channel 4

OUT2

+ V

OUT3

OUT4

bb

17

Load

Load GND

Leadframe

14

13

Load

Load GND

Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20

Maximum Ratings

at

= 25°C unless otherwise specified

j

T

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection

T

= -40 ...+150°C

j,start

V V

bb bb

43 V 34 V

Semiconductor Group 2

BTS 712 N1

)

at

T

Maximum Ratings Parameter Symbol Values Unit

= 25°C unless otherwise specified

j

Load current (Short-circuit current, see page 5)

)

Load dump protection

)

3

R

= 2 Ω,

I

t

= 200 ms; IN = low or high,

d

each channel loaded with

2

V

LoadDump

R

= 7.1 Ω,

L

=

U

+

V

,

U

s

= 13.5 V

A

Operating temperature range Storage temperature range Power dissipation (DC) (all channels active)

5

T

= 25°C:

a

T

= 85°C:

a

Inductive load switch-off energy dissipation, single pulse V

= 12V,

bb

I

= 1.9 A, Z

L

I

= 2.8 A, Z

L

I

= 4.4 A, Z

L

see diagrams on page 9

T

= 150°C5),

j,start

= 66 mH, 0 Ω one channel:

L

= 66 mH, 0 Ω two parallel channels:

L

= 66 mH, 0 Ω four parallel channels:

L

Electrostatic discharge capability (ESD (Human Body Model)

Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagram page 8

I

L

V

Load dump

T

j

T

stg

P

tot

E

AS

V

ESD

V

IN

I

IN

I

ST

self-limited A

)

4

-40 ...+150

60 V

°C

-55 ...+150

3.6

W

1.9

150

mJ 320 800

1.0 kV

-10 ... +16 V ±2.0

mA

±5.0

Thermal resistance junction - soldering point junction - ambient

5)

5),6)

each channel:

one channel active:

R R

thjs thja

all channels active:

)

2

Supply voltages higher than V 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated.

3)

R

= internal resistance of the load dump test pulse generator

I

4)

V

Load dump

)

5

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air. See page 14

)

6

Soldering point: upper side of solder edge of device pin 15. See page 14

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

2

(one layer, 70µm thick) copper area for V

16 K/W 44 35

bb

Semiconductor Group 3

Electrical Characteristics

BTS 712 N1

Parameter and Conditions,

at Tj = 25 °C,

V

= 12 V unless otherwise specified

bb

each of the four channels

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT) IL = 1.8 A each channel,

two parallel channels,

four parallel channels,

T

= 25°C:

j

T

= 150°C:

j

T

= 25°C:

j

T

= 25°C:

j

Nominal load current one channel active:

two parallel channels active:

four parallel channels active:

Device on PCB5),

T

= 85°C,

a

T

≤ 150°C

j

Output current while GND disconnected or pulled

up; V

= 30 V,

bb

Turn-on time to 90% Turn-off time to 10%

R

= 12 Ω

L

T

,

V

= 0, see diagram page 9

IN

=-40...+150°C

j

V V

OUT OUT

: :

Slew rate on 10 to 30%

V

OUT

R

,

= 12 Ω

L

T

,

=-40...+150°C:

j

Slew rate off 70 to 40%

V

OUT

,

R

L

= 12 Ω

T

,

=-40...+150°C:

j

Symbol Values Unit

min typ max

R

ON

I

L(NOM)

I

L(GNDhigh)

t

on

t

off

dV/dt

on

-dV/dt

off

--

1.7

2.6

4.1

165 320

83 42

1.9

2.8

4.4

200 400

100

50

-- -- 10 mA

80 80

200 200

400 400

0.1 -- 1 V/µs

mΩ

-- A

µs

Operating Parameters

)

Operating voltage

7

Undervoltage shutdown Undervoltage restart

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

Undervoltage restart of charge pump see diagram page 13

T

=-40...+150°C:

j

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

= 40 mA

bb

7)

At supply voltage increase up to

8)

see also

=

V

ON(CL)

V

bb(u rst)

V

-

bb(under)

)

8

V

in circuit diagram on page 8.

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C: ∆

j

T

=-40...+150°C:

j

= 5.6 V typ without charge pump,

bb

=-40...+25°C:

j

T

=+150°C:

j

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

V

∆

bb(under)

V

bb(over)

V

bb(o rst)

V

bb(over)

V

bb(AZ)

V

5.0 --

3.5 --

-- -- 5.0

-- 5.6 7.0 V

-- 0.2 -- V

34 -33 -- -- V

-- 0.5 -- V

42 47 -- V

≈

V

OUT

bb

- 2 V

34 V

5.0 V

7.0

43 V

V

Semiconductor Group 4

BTS 712 N1

j

Parameter and Conditions,

at Tj = 25 °C,

V

= 12 V unless otherwise specified

bb

each of the four channels

Standby current, all channels off V

= 0

IN

Operating current 9),

I

=

GND

I

GND1/2

+

I

GND3/4

V

IN

,

= 5V,

=-40...+150°C

T

one channel on:

four channels on:

Protection Functions

Initial peak short circuit current limit,

diagrams, page 11)

each channel,

(see timing

two parallel channels

four parallel channels

Repetitive short circuit current limit,

T

=

T

each channel

j

jt

two parallel channels

four parallel channels

(see timing diagrams, page 11)

Initial short circuit shutdown time

T T

(see page 10 and timing diagrams on page 11)

Output clamp (inductive load switch off) at V

ON(CL)

= Vbb - V

OUT

Thermal overload trip temperature Thermal hysteresis

T

=25°C

j

T

=150°C:

j

=-40°C:

j

T

=25°C:

j

T

=+150°C:

j

T

=-40°C:

j,start

= 25°C:

j,start

10)

Symbol Values Unit

min typ max

:

I

bb(off)

I

GND

I

L(SCp)

--

----0.35

5.5

4.5

2.5

180 160

1.2

9.5

7.5

4.5

300 300

0.8

2.8

13 11

twice the current of one channel

four times the current of one channel

I

L(SCr)

t

off(SC)

V

ON(CL)

T

jt

∆T

jt

--

4 4 4

5.5 4

-- 47 -- V

150 -- -- °C

-- 10 -- K

µ

mA

7

--

----ms

A

Reverse Battery

)

Reverse battery voltage Drain-source diode voltage

= - 1.9 A,

L

I

j

= +150°C

T

11

(V

out

> Vbb)

-

V

bb

-

V

ON

-- -- 32 V

-- 610 -- mV

Diagnostic Characteristics

Open load detection current Open load detection voltage

)

9

Add

)

10

If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest V

)

11

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8).

I

ST

ON(CL)

, if

> 0

I

ST

=-40..+150°C:

T

j

I

L(off)

V

OUT(OL)

-- 30 -234V

Semiconductor Group 5

A

µ

Siemens BTS712N1 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual