Siemens BTS707 Datasheet

Smart Two Channel Highside Power Switch

PROFET® BTS 707

Features

•

Overload protection

•

Current limitation

•

Short-circuit protection

•

Thermal shutdown

•

Overvoltage protection

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Open drain diagnostic output

•

Open load detection in OFF-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

1

)

protection

bb

Product Summary

Overvoltage Protection
Operating voltage

active channels: one two parallel
On-state resistance
Nominal load current

R

ON

I

L(NOM)

V

bb(AZ)

V

bb(on)

65 V

5.8 ... 58 V

250 125

1.9 2.8 A

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

•

Most suitable for inductive loads

•

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.

m

Ω

Pin Definitions and Functions

Pin Symbol Function

1,10,
11,12,
15,16,
19,20
3 IN1 Input 1,2, activates channel 1,2 in case of
7 IN2 logic high signal
17,18 OUT1 Output 1,2, protected high-side power output
13,14 OUT2 of channel 1,2. Design the wiring for the max.

4 ST1 Diagnostic feedback 1,2 of channel 1,2,
8 ST2 open drain, low in on state on failure or high in

2 GND1 Ground 1 of chip 1 (channel 1)
6 GND2 Ground 2 of chip 2 (channel 2)
5,9 N.C. Not Connected

V

bb

Positive power supply voltage. Design the

wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance

short circuit current

off state on failure

Pin configuration

Vbb1

GND1 2 19 V

IN1 3 18 OUT1

ST1 4 17 OUT1

N.C. 5 16 V

GND2 6 15 V

IN2 7 14 OUT2

ST2 8 13 OUT2

N.C. 9 12 V

Vbb10 11 V

•

(top view)

20 V

bb
bb

bb
bb

bb
bb

)

1

With external current limit (e.g. resistor R
connection, reverse load current limited by connected load.

=150 Ω) in GND connection, resistor in series with ST

GND

Semiconductor Group 1 08.96

Block diagram

Voltage

source

Voltage

sensor

IN1

3

ESD

ST1

4

V

Logic

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Limit for

unclamped

ind. loads

Open load

detection

Gate

protection

Temperature

sensor

+ V

bb

OUT1

BTS 707

Leadframe

17,18

Load

Signal­GND

Chip 1

Signal­GND

Chip 2

1

7

8

6

GND1

IN2

ST2

GND2

Short circuit

detection

Chip 1

Logic and protection circuit of chip 2

(equivalent to chip 1)

Chip 2

PROFET

Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20



+ V

bb

OUT2

Load GND

Leadframe

13,14

Load

Load GND

Maximum Ratings

at

= 25°C unless otherwise specified

j

T

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection

T

= -40 ...+150°C

j,start

Load current (Short-circuit current, see page 5)
Operating temperature range
Storage temperature range

V
V

I
T
T

bb
bb

L

j
stg

self-limited A

-40 ...+150

-55 ...+150

65 V
40 V

°C

Semiconductor Group 2

BTS 707

)

at

T

Maximum Ratings
Parameter Symbol Values Unit

= 25°C unless otherwise specified

j

Power dissipation (DC)
(all channels active)
Electrostatic discharge capability (ESD

(Human Body Model) all other pins:
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)

see internal circuit diagram page 7

2)

T

= 25°C:

a

T

= 85°C:

a

IN, ST:

P

V

tot

ESD

1.6

1.0

3

W

kV

tbd (>1.0)

V
I
I

IN
IN
ST

-0.5 ... +36 V
±2.0

mA

±5.0

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance
junction - soldering point

junction - ambient

2)

2),3)

each channel:

one channel active:

all channels active:

R
R

thjs
thja

-- -- 18

--

--

45
37

K/W

--

--

Electrical Characteristics

Parameter and Conditions,

at Tj = 25 °C,

V

= 12 V unless otherwise specified

bb

each of the two channels

Symbol Values Unit

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT)
IL = 2 A each channel,

V

= 24 V

bb

two parallel channels,

Nominal load current one channel active:

T

= 25°C:

j

T

= 150°C:

j

T

= 25°C:

j

R

ON

I

L(NOM)

two parallel channels active:
Device on PCB2),
Output current while GND disconnected or pulled

up; V

)

2

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air. See page 12

)

3

Soldering point: upper side of solder edge of device pin 15. See page 12

= 32 V,

bb

T

= 85°C,

a

V

= 0, see diagram page 8

IN

T

≤ 150°C

j

I

L(GNDhigh)

2

(one layer, 70µm thick) copper area for V

min typ max

--

1.60

2.4

225
400

113

1.9

2.8

250
500

125

-- A

-- -- 1.1 mA

mΩ

bb

Semiconductor Group 3

BTS 707

j

Parameter and Conditions,

at Tj = 25 °C,

Turn-on time

V

= 12 V unless otherwise specified

bb

each of the two channels

to 90%

Turn-off time to 10%

R

= 12

L

V

,

= 20 V

bb

Ω

T

=-40...+150°C

,

j

Slew rate on
10 to 30%

V

OUT

R

= 12

,

L

V

,

= 20 V

bb

T

=-40...+150°C:

j

,

Ω

Slew rate off
70 to 40%

V

OUT

,

R

= 12

L

V

,

= 20 V

bb

T

=-40...+150°C:

j

,

Ω

Operating Parameters

)

Operating voltage
Undervoltage shutdown
Undervoltage restart

4

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

Undervoltage restart of charge pump
see diagram page 11

T

=-40...+150°C:

j

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage protection

I

= 40 mA

bb

=

V

bb(u rst)

-

V

bb(under)

)

5

T

=-40...+150°C:

j

Standby current, all channels off
V

= 0

IN

Operating current 6),

I

=

I

+

GND

GND1

I

GND2

V

= 5V,

IN

,

=-40...+150°C

T

T

=150°C:

j

one channel on:

two channels on:

V
V

OUT
OUT

Symbol Values Unit

min typ max

:
:

t

on

t

off

dV/dt

-dV/dt

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

V

∆

bb(under)

V

bb(AZ)

I

bb(off)

on

off

15
20

--

--

80
70

-- -- 6 V/µs

-- -- 7 V/µs

5.8 --

2.7 --

58 V

4.7 V

-- -- 4.9 V

-- 5.6 7.5 V

-- 0.4 -- V

65 70 -- V

--

20 70

--

I

GND

--

--

2.2

4.4

µ

A

µ

----mA

s

Protection Functions

Initial peak short circuit current limit,

diagrams, page 9)

each channel,

two parallel channels

Output clamp (inductive load switch off)
at V

ON(CL)

= Vbb - V

OUT

Thermal overload trip temperature
Thermal hysteresis

4)

At supply voltage increase up to

5)

see also

)

6

Add

)

7

If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V

ON(CL)

V

, if

I

ST

in circuit diagram on page 7.

ON(CL)

> 0

I

ST

(see timing

=-40°C:

j

T

=25°C:

j

T

=+150°C:

j

T

7)

I

V
T

∆T

= 5.6 V typ without charge pump,

V

bb

L(SCp)

ON(CL)

jt

jt

--

--

4.0

--

10

--

twice the current of one channel

59 -- 75 V

150 -- -- °C

-- 10 -- K

≈

V

OUT

V

bb

- 2 V

Semiconductor Group 4

19

A

--

--