Siemens BTS630 Datasheet
PWM Power Unit
)
)
(
)
(
)
j
g
The device allows continuous power control for lamps,LEDs
or inductive loads.
•
Highside switch
•
Overtemperatur protection
•
Short circuit / overload protection through pulse widt
reduction and overload shutdown
•
Load dump protection
•
Undervoltage and overvoltage shutdown with auto-restart
and hysteresis
•
Reverse battery protection 1)
•
Timing frequency adjustable
•
Controlled switching rise and fall times
•
Maximum current internally limited
•
Protection against loss of GND 2)
•
Electrostatic discharge (ESD) protection
•
Package: TO220/7 and TO220/7 E3128 (SMD), Pin 4 is
shorted to the mounting flange
BTS 630
7
1
Standard
Note:
Switching frequency is programmed with an external capacitor.
Type Ordering Code Marking Package
BTS630
(Standard)
Q67060-S6305-A2 - TO220/7
BTS630 Q67060-S6305-A3 - TO220/7, E3230
Maximum Ratings
Parameter Symbol Values Unit
Active overvoltage prodection
Short circuit current
Input current (DC
Pin1
C
and pin19
t
V
C
Operating temperature range
Storage temperature range
Power dissipation
T
=25°C
a
Thermal resistance chip-case
V
bb (AZ
I
SC
I
Ct
I
VC
T
T
st
P
tot
R
th JC
>40 V
self-limited 2mA
2mA
i
-40...+150
C
-50...+150
75 W
≤ 1.67
K/W
chip-ambient
1)
With 150Ω resistor in signal GND connection.
2)
Potential between signal GND and load GND >0.5V
Semiconductor Group 1 12.96
R
th JA
≤ 75
Block Diagram
y
g
4321 765
Overvoltage
Prodtection
Over / Undervoltage
Detection
Temperature
Sensor
BTS 630
(4)
V
bb
Timing
Generator
(1) (2)(3)
(5) (6) (7)
GND
Timing
Si
nal GND Load GND
Voltage
Regulator
t REF
Cap.
Pulse - width
Comparator
VVC
C
Logic
Pump and
Current
Limiting
C
B
Bootstrap
Capacitor
OUT
Pin Definitions and Funktions Pin Configuration (top view)
Pin Symbol Funktions
1 GND Ground
V
2
3
4
5
6
7 OUT Output
Semiconductor Group 2
V
V
C
C
C
REF
bb
t
B
Voltage for PWM-Control
Reference Voltage
Supply voltage
Timing capacitor
for frequenc
Bootstrap capacitor
BTS 630
)
)
(on)
(
)
j
Electrical Characteristics
T
at
= 25 iC, unless otherwise specified.C
j
Bootstrap
Parameter Symbol Values Unit
On-state resistance
I
L
=3A,
V
=12V
bb
Operating voltage
T
= -40 ...+150iC
j
Nominal current, calculated value
ISO-standard:Vbb-V
≤ 0.5V, Tc=85°C
OUT
Load current limit
V
-
V
OUT
> 1V
bb
Undervoltage shutdown
I
= 3A
L
Overvoltage shutdown
I
= 3A
L
Max.output voltage (RMS)
I
= 3A,
L
V
bb
> 12 V
Reference voltage
= 10mA
I
REF
Reference current
pin 18 (GND) to pin 20 (V
REF
) short
Internal current consumption during
operation, measured in PWM gap
Bootstrap voltage, pin 2 (
= 12 V,
V
bb
) to pin 3 (
C
B1
C
B2
)
PWM frequency
= -40 ... +150 °C,
T
c
= 68 nF
C
t
Max. pulse duty factor
= 3A,
I
L
=0V , (50%
V
C
V
OUT
)
Min. pulse duty factor
= 3A,
I
L
=0V , (50%
V
C
V
OUT
)
Slew rate "on" du/d
10 ... 90%
I
OUT
Slew rate "off" du/d
90 ... 10%
I
OUT
Thermal overload trip temperature T
Note:
1)
2)
undervoltage shutdown
Note:
overvoltage shutdown
= 22nF
min. typ. max.
R
ON
V
bb
I
-ISO 5.8 - - A
L
I
LLim
V
bb(LOW
V
bb(HI
V
RMSmax
V
REF
I
REF
I
R
V
B
f
PWM
D
imax
D
imin
t
t
off
--70
5.9
1)
16.9
2)
-20 -A
3 4.2 5.4 V
17 18 19 V
12 - 14 V
23V
- 150 - mA
-5mA
-10 -V
50 - 100 Hz
95 98 - %
-8 14 %
20 - 120
20 - 120
150 - - °C
Ω
m
V
mV/µs
mV/µs
Semiconductor Group 3
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