Siemens BTS612N1 Datasheet

Smart Two Channel Highside Power Switch

)

BTS 612 N1

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

1

)

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in OFF-state

•

CMOS compatible input

•

Loss of ground and loss of

•

Electrostatic discharge (ESD) protection

V

protection

bb

Application

•

µC compatible power switch with diagnostic

Product Summary

Overvoltage protection Operating voltage

channels: each

On-state resistance Load current (ISO) Current limitation

TO-220AB/7

7

1

Standard

Straight leads

R

ON

I

L(ISO

I

L(SCr

V

bb(AZ

V

bb(on

1

43 V

5.0 ... 34 V

both parallel

200 100

2.3 4.4 A 44A

7

1

SMD

feedback for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

•

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

m

Ω

7

Voltage

source

V

Logic

Voltage

sensor

3

IN1 IN2

6

ESD

5

ST

PROFET

Logic



Overvoltage

protection

Level shifter

Rectifier 1

Charge

pump 1

Charge

pump 2

Level shifter

Rectifier 2

GND

2

Current

limit 1

Current

limit 2

Signal GND

)

1

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

Gate 1

protection

Limit for

unclamped

ind. loads 1

Open load

Short to Vbb

detection 1

Gate 2

protection

Limit for

unclamped

ind. loads 2

Open load

Short to Vbb

detection 2

Temperature

sensor 1

Temperature

sensor 2

+ V

OUT1

OUT2

bb

4

1

7

Load

Load GND

Semiconductor Group 1

BTS 612 N1

j,

Parameter and Conditions,

at

T

= 25 °C,

j

V

= 12 V unless otherwise specified

bb

each channel

Symbol Values Unit

min typ max

Pin Symbol Function

1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1 2 GND Logic ground 3 IN1 Input 1, activates channel 1 in case of logical high signal 4V

bb

Positive power supply voltage, the tab is shorted to this pin

5ST

Diagnostic feedback: open drain, low on failure

6 IN2 Input 2, activates channel 2 in case of logical high signal 7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2

at

T

= 25 °C unless otherwise specified

Maximum Ratings

j

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

)

Load dump protection

)

3

R

= 2 Ω,

I

R

= 5.3 Ω,

L

2

V

LoadDump

t

= 200 ms, IN= low or high

d

=

U

A

+

V

,

s

U

= 13.5 V

A

Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C

V

bb

V

bb

V

Load dump

I

L

T

j

T

stg

P

tot

43 V 34 V

)

4

60 V

self-limited A

-40 ...+150

°C

-55 ...+150 36 W

Inductive load switch-off energy dissipation, single pulse V

= 12V,

one channel,

both channels parallel,

see diagrams on page 9

Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins:

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 8

T

= 150°C,

start

T

= 150°C const.

C

I

= 2.3 A, Z

L

I

= 4.4 A, Z

L

= 89 mH, 0

L

= 47 mH, 0 Ω: 580

L

Ω

:

E

AS

V

ESD

V I I

IN IN ST

-10 ... +16 V

290 mJ

1.0

2.0

± ±

2.0

5.0

mA

kV

)

2

Supply voltages higher than V 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.

3)

R

= internal resistance of the load dump test pulse generator

I

4)

V

Load dump

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

Semiconductor Group 2

BTS 612 N1

Parameter and Conditions,

at

T

= 25 °C,

j

V

= 12 V unless otherwise specified

bb

each channel

Symbol Values Unit

min typ max

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance chip - case, both channels:

each channel:

junction - ambient (free air):

R

thJC

thJA

--

3.5

7.0 75

K/W

SMD version, device on PCB5):37

Electrical Characteristics

Parameter and Conditions,

at

T

= 25 °C,

j

V

= 12 V unless otherwise specified

bb

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1 or 7)

I

= 1.8 A

L

each channel Nominal load current, ISO Norm (pin 4 to 1 or 7)

V

= 0.5 V,

ON

T

= 85 °C each channel:

C

Output current (pin 1 or 7) while GND disconnected

or GND pulled up,

V

bb

=30 V,

page 9 Turn-on time IN to 90% Turn-off time IN to 10%

R

= 12

L

T

=-40...+150°C

Ω

,

j

Slew rate on 10 to 30%

V

OUT

R

= 12

,

L

Slew rate off 70 to 40%

V

OUT

,

R

= 12

L

each channel

T

=25 °C:

j

T

=150 °C:

j

both channels parallel:

V

= 0, see diagram

IN

T

=-40...+150°C

Ω

,

j

T

=-40...+150°C

Ω

,

j

V V

OUT OUT

Symbol Values Unit

min typ max

R

: :

I

t t

dV /dt

-dV/dt

ON

L(ISO)

L(GNDhigh)

on off

on

off

-- 160

1.8

3.5

320

2.3

4.4

200 400

-- -- 10 mA

80 80

200 200

400 400

0.1 -- 1 V/µs

m

Ω

--

A

--

µ

s

)

5

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air.

Semiconductor Group 3

2

(one layer, 70µm thick) copper area for V

bb

BTS 612 N1

j

Parameter and Conditions,

at

T

= 25 °C,

j

V

= 12 V unless otherwise specified

bb

each channel

Operating Parameters

)

Operating voltage Undervoltage shutdown Undervoltage restart

6

T

j

T

j

T

Undervoltage restart of charge pump see diagram page 12

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

bb

Standby current (pin 4)

V

IN

Operating current (Pin 2)8), both channels on, Operating current (Pin 2) one channel on,

=

=40 mA

=0

V

bb(u rst)

-

V

bb(under)

)

7

,

V

=5 V

IN

=-40...+150°C,

T

8)

=-40...+150°C:,

T

j

T

j

T

j

T

j

T

=-40...+150°C: =-40...+150°C:

=-40...+25°C:

T

=+150°C:

j

=-40...+150°C: =-40...+150°C: =-40...+150°C: =-40...+150°C:

=-40...+150°C:

j

Symbol Values Unit

min typ max

V

bb(on)

V

bb(under)

V

bb(u rst)

5.0 -- 34 V

3.5 -- 5.0 V

-- -- 5.0

7.0

V

bb(ucp)

V

∆

V

bb(over)

V

bb(o rst)

V

∆

V

bb(AZ)

I

bb(off)

bb(under)

bb(over)

-- 5.6 7.0 V

-- 0.2 -- V

34 -- 43 V 33 -- -- V

-- 0.5 -- V

42 47 -- V

-- 90 150

I

GND

I

GND

-- 0.6 1.2 mA

-- 0.4 0.7 mA

V

A

µ

6)

At supply voltage increase up to

7)

)

8