Siemens BTS611L1 Datasheet

Smart Two Channel Highside Power Switch

)

PROFET® BTS 611 L1

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of

•

Electrostatic discharge (ESD) protection

1

)

V

protection

bb

Product Summary

Overvoltage protection Operating voltage

On-state resistance Load current (ISO) Current limitation

Application

•

µC compatible power switch with diagnostic

feedback for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve

loads

•

Replaces electromechanical relays, fuses and discrete circuits

Standard

channels: each

R

I

L(ISO

I

L(SCr

TO-220AB/7

7

1

Straight leads

ON

V

bb(AZ

V

bb(on

1

43 V

5.0 ... 34 V

both parallel

200 100

m

Ω

2.3 4.4 A 44A

7

SMD

7

1

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

+ V

bb

OUT1

4

1

7

Load

O2

Load GND

Voltage

source

V

Logic

Voltage

sensor

3

IN1 IN2

6

ESD

5

ST

PROFET

Logic



Overvoltage

protection

Level shifter

Rectifier 1

Charge

pump 1

Charge

pump 2

Level shifter

Rectifier 2

GND

2

Current

limit 1

Current

limit 2

Signal GND

Gate 1

protection

Limit for

unclamped

ind. loads 1

Open load

Short to Vbb

detection 1

Gate 2

protection

Limit for

unclamped

ind. loads 2

Open load

Short to Vbb

detection 2

Temperature

sensor 1

Temperature

sensor 2

OUT2

RR

O1

GND

)

1

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

Semiconductor Group 1 12.96

BTS 611 L1

j,

)

Pin Symbol Function

1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1 2 GND Logic ground 3 IN1 Input 1, activates channel 1 in case of logical high signal 4V

bb

Positive power supply voltage, the tab is shorted to this pin

5ST

Diagnostic feedback: open drain, low on failure

6 IN2 Input 2, activates channel 2 in case of logical high signal 7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2

at

T

= 25 °C unless otherwise specified

Maximum Ratings

j

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

)

Load dump protection

)

3

R

= 2 Ω,

I

R

= 5.3 Ω,

L

2

V

LoadDump

t

= 200 ms, IN= low or high

d

=

U

A

+

V

,

s

U

= 13.5 V

A

Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C

V

bb

V

bb

V

Load dump

I

L

T

j

T

stg

P

tot

43 V 34 V

)

4

60 V

self-limited A

-40 ...+150

°C

-55 ...+150 36 W

Inductive load switch-off energy dissipation, single pulse V

= 12V,

one channel,

both channels parallel,

see diagrams on page 9

Electrostatic discharge capability (ESD (Human Body Model

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 7

T

= 150°C,

start

T

= 150°C const.

C

I

= 2.3 A, Z

L

I

= 4.4 A, Z

L

= 89 mH, 0 Ω:

L

= 47 mH, 0 Ω: 580

L

IN:

E

V

AS

ESD

all other pins:

V I I

IN IN ST

-10 ... +16 V

290 mJ

1.0

2.0

±2.0

mA

±5.0

kV

)

2

Supply voltages higher than V 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.

3)

R

= internal resistance of the load dump test pulse generator

I

4)

V

Load dump

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

Semiconductor Group 2

BTS 611 L1

)

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance chip - case, both channels:

each channel:

junction - ambient (free air):

R

thJC

thJA

--

3.5

7.0 75

K/W

SMD version, device on PCB5):37

Electrical Characteristics

Parameter and Conditions,

at

T

= 25 °C,

j

V

= 12 V unless otherwise specified

bb

each channel

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1 or 7)

I

= 1.8 A

L

each channel

T

=25 °C:

j

T

=150 °C:

j

Nominal load current, ISO Norm (pin 4 to 1 or 7

V

= 0.5 V,

ON

T

= 85 °C each channel:

C

both channels parallel:

Output current (pin 1 or 7) while GND disconnected

or GND pulled up,

V

bb

=30 V,

V

= 0, see diagram

IN

page 8 Turn-on time IN to 90% Turn-off time IN to 10%

R

= 12

L

T

=-40...+150°C

,

Ω

j

V V

OUT OUT

: :

Slew rate on 10 to 30%

V

OUT

R

= 12

,

L

T

=-40...+150°C

,

Ω

j

Slew rate off 70 to 40%

V

OUT

,

R

= 12

L

T

=-40...+150°C

,

Ω

j

Symbol Values Unit

min typ max

R

ON

I

L(ISO)

-- 160

1.8

3.5

320

2.3

4.4

200 400

m

--

I

L(GNDhigh)

t

on

t

off

dV /dt

-dV/dt

on

off

-- -- 10 mA

80 80

200 200

400 400

0.1 -- 1 V/µs

Ω

A

s

µ

)

5

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air.

Semiconductor Group 3

2

(one layer, 70µm thick) copper area for V

bb

BTS 611 L1

j

)

j

Parameter and Conditions,

at

T

= 25 °C,

j

V

= 12 V unless otherwise specified

bb

each channel

Operating Parameters

)

Operating voltage Undervoltage shutdown Undervoltage restart

6

T

j

T

j

T

Undervoltage restart of charge pump see diagram page 13

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

bb

=

=40 mA

V

bb(u rst)

-

V

bb(under)

)

7

T

j

T

j

T

j

T

j

Standby current (pin 4)

V

=0

IN

Leakage output current (included in

IN

V

=0

Operating current (Pin 2)8), both channels on,

=-40...+150°C

T

Operating current (Pin 2) one channel on,

=-40...+150°C:

T

V

=5 V

IN

8)

=-40...+150°C: =-40...+150°C:

=-40...+25°C:

T

=+150°C:

j

=-40...+150°C: =-40...+150°C: =-40...+150°C: =-40...+150°C:

T

=-40...+25°C

j

T

= 150°C:

j

I

)

bb(off

Symbol Values Unit

min typ max

V

bb(on)

V

bb(under)

V

bb(u rst)

5.0 -- 34 V

3.5 -- 5.0 V

-- -- 5.0

7.0

V

bb(ucp)

V

∆

bb(under)

V

bb(over)

V

bb(o rst)

V

∆

bb(over)

V

bb(AZ)

I

:

bb(off)

I

L(off)

I

GND

I

GND

-- 5.6 7.0 V

-- 0.2 -- V

34 -- 43 V 33 -- -- V

-- 0.5 -- V

42 47 -- V

--

14 17

30 35

-- -- 12

-- 4 6 mA

-- 2 3 mA

V

A

µ

A

µ

6)

At supply voltage increase up to

7)

)

8

See also Add

V

I

, if

ST

in table of protection functions and circuit diagram page 8.

ON(CL)

I

> 0, add

ST

I

IN

, if

V

= 5.6 V typ without charge pump,

bb

V

>5.5 V

IN

Semiconductor Group 4

V

OUT

≈

V

- 2 V

bb

BTS 611 L1

j

Parameter and Conditions,

at

T

= 25 °C,

j

V

= 12 V unless otherwise specified

bb

each channel

Protection Functions

Initial peak short circuit current limit (pin 4 to 1 or 7)

=-40°C:

T

=25°C:

T

=+150°C:

j

T

Repetitive short circuit shutdown current limit

T

=

T

j

(see timing diagrams, page 11)

jt

Output clamp (inductive load switch off) at

V

=

V

-

OUT

bb

V

ON(CL)

I

= 40 mA:

L

Thermal overload trip temperature Thermal hysteresis

)

Reverse battery (pin 4 to 2) Reverse battery voltage drop

= -1.8 A, each channel

I

L

9

(V

out

> V

bb

)

T

=150 °C:

j

Symbol Values Unit

min typ max

I

L(SCp)

I

L(SCr)

5.5

4.5

2.5

9.5

7.5

4.5

13 11

7

-- 4 -- A

V

ON(CL)

T

jt

∆T

-

V

-V

jt

bb

ON(rev)

41 47 53 V

150 -- -- °C

-- 10 -- K

-- -- 32 V

--

610 --

mV

A

Diagnostic Characteristics

Open load detection current

(on-condition)

Open load detection voltage

Internal output pull down

(pin 1

7 to 2),

or

V

OUT

=5 V,

T

=25 ..150°C:

T

j

)

10

(off-condition)

=-40..150°C:

T

j

=-40..150°C

T

j

=-40 °C

:

I

L (OL)

V

OUT(OL)

R

O

10 10

--

200

--

150

mA

234V

41030k

Ω

)

9

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8).

10)

External pull up resistor required for open load detection in off state.

Semiconductor Group 5