Siemens BTS610L1 Datasheet

Smart Two Channel Highside Power Switch

)

PROFET® BTS 610 L1

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

1

)

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of

•

Electrostatic discharge (ESD) protection

V

protection

bb

Application

•

µC compatible power switch with diagnostic

feedback for 12 V DC grounded loads

•

Most suitable for resistive and lamp loads

Product Summary

Overvoltage protection Operating voltage

channels: each

On-state resistance Load current (ISO) Current limitation

TO-220AB/7

Standard

R

ON

I

L(ISO

I

L(SCr

V

bb(AZ

V

bb(on

1

43 V

5.0 ... 24 V

both parallel

200 100

2.3 4.4 A 55A

7

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

m

Ω

+ V

bb

OUT1

4

1

7

Load

O2

Load GND

Voltage

source

V

Logic

Voltage

sensor

3

IN1 IN2

6

ESD

5

ST

PROFET

Logic



Overvoltage

protection

Level shifter

Rectifier 1

Charge

pump 1

Charge

pump 2

Level shifter

Rectifier 2

GND

2

Current

limit 1

Current

limit 2

Signal GND

Gate 1

protection

Open load

Short to Vbb

detection 1

Gate 2

protection

Open load

Short to Vbb

detection 2

Temperature

sensor 1

Temperature

sensor 2

OUT2

RR

O1

GND

)

1

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

Semiconductor Group 1 02.97

BTS 610 L1

)

Pin Symbol Function

1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1 2 GND Logic ground 3 IN1 Input 1, activates channel 1 in case of logical high signal 4V

bb

Positive power supply voltage, the tab is shorted to this pin

5ST

Diagnostic feedback: open drain, low on failure

6 IN2 Input 2, activates channel 2 in case of logical high signal 7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2

at

T

= 25 °C unless otherwise specified

Maximum Ratings

j

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

)

Load dump protection

)

3

R

= 2 Ω,

I

R

= 5.3 Ω,

L

2

V

LoadDump

t

= 200 ms, IN= low or high

d

=

U

A

+

V

,

s

U

= 13.5 V

A

Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Electrostatic discharge capability (ESD

(Human Body Model

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

all other pins:

Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6

IN:

V

bb

V

bb

V

Load dump

I

L

T

j

T

stg

P

tot

V

ESD

V

IN

I

IN

I

ST

43 V 24 V

)

4

60 V

self-limited A

-40 ...+150

°C

-55 ...+150 36 W

1.0

kV

2.0

-10 ... +16 V ±2.0

mA

±5.0

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance chip - case, both channels:

each channel:

junction - ambient (free air):

)

2

Supply voltages higher than V 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.

3)

R

= internal resistance of the load dump test pulse generator

I

4)

V

Load dump

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

R

thJC

thJA

--

Semiconductor Group 2

3.5

7.0 75

K/W

Electrical Characteristics

)

j

BTS 610 L1

Parameter and Conditions,

at

T

= 25 °C,

j

V

= 12 V unless otherwise specified

bb

each channel

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1 or 7)

I

= 1.8 A

L

each channel

T

=25 °C:

j

T

=150 °C:

j

Nominal load current, ISO Norm (pin 4 to 1 or 7

V

= 0.5 V,

ON

T

= 85 °C each channel:

C

both channels parallel:

Output current (pin 1 or 7) while GND disconnected

or GND pulled up,

V

bb

=30 V,

V

= 0, see diagram

IN

page 7 Turn-on time IN to 90% Turn-off time IN to 10%

R

= 12 Ω

L

T

=-40...+150°C

,

j

V V

OUT OUT

: :

Slew rate on 10 to 30%

OUT

R

,

= 12 Ω

L

T

=-40...+150°C

,

j

V

Slew rate off 70 to 40%

V

OUT

,

R

L

= 12 Ω

T

=-40...+150°C

,

j

Symbol Values Unit

min typ max

R

ON

I

L(ISO)

I

L(GNDhigh)

t

on

t

off

dV /dt

on

-dV/dt

off

-- 160

1.8

3.5

320

2.3

4.4

200 400

mΩ

--

-- -- 10 mA

80 80

200 200

400 400

0.1 -- 1 V/µs

A

µs

Operating Parameters

)

Operating voltage

5

Undervoltage shutdown Undervoltage restart

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

Undervoltage restart of charge pump see diagram page 10

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

=40 mA

bb

=

V

bb(u rst)

-

V

bb(under)

)

6

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C: ∆

j

T

=-40...+150°C:

j

Standby current (pin 4)

V

=0

IN

Leakage output current (included in

IN

V

=0

Operating current (Pin 2)7), both channels on,

5)

At supply voltage increase up to

6)

See also

V

ON(CL)

=-40...+150°C

T

in table of protection functions and circuit diagram page 7.

V

=5 V

IN

V

= 5.6 V typ without charge pump,

bb

T

=-40...+25°C

j

T

= 150°C:

j

I

)

bb(off

:

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

V

∆

bb(under)

V

bb(over)

V

bb(o rst)

V

bb(over)

V

bb(AZ)

I

bb(off)

I

L(off)

I

GND

V

5.0 -- 24 V

3.5 -- 5.0 V

-- -- 5.0 V

-- 5.6 7.0 V

-- 0.2 -- V

24 -- 34 V 23 -- -- V

-- 0.5 -- V

42 47 -- V

--

14 17

-- -- 12 µA

-- 4 6 mA

≈

V

OUT

bb

- 2 V

30 35

µA

Semiconductor Group 3

BTS 610 L1

j

Parameter and Conditions,

at

T

= 25 °C,

j

V

= 12 V unless otherwise specified

bb

Operating current (Pin 2) one channel on,

=-40...+150°C:

T

each channel

7)

Protection Functions

Initial peak short circuit current limit

(pin 4 to 1 or 7)

T

=-40°C:

T

=25°C:

T

=+150°C:

j

Repetitive short circuit shutdown current limit

T

=

T

j

(see timing diagrams, page 9)

jt

Thermal overload trip temperature Thermal hysteresis

)

Reverse battery (pin 4 to 2) Reverse battery voltage drop

= -1.8 A, each channel

I

L

8

(V

out

> V

bb

)

T

=150 °C:

j

Symbol Values Unit

min typ max

I

GND

I

L(SCp)

I

L(SCr)

-- 2 3 mA

8

3.5

11.5

6

9 6

15 12

7.5

-- 5 -- A

T ∆T

-

V

-V

jt

bb

ON(rev)

150 -- -- °C

-- 10 -- K

-- -- 32 V

--

610 --

mV

A

Diagnostic Characteristics

Open load detection current

(on-condition, )

Open load detection voltage

Internal output pull down

(pin 1

7 to 2),

or

V

OUT

=5 V,

T

=25..150°C:

T

j

)

9

(off-condition)

=-40..150°C:

T

j

=-40..150°C

T

j

=-40 °C

:

I

L (OL)

V

OUT(OL)

R

O

10 10

--

200

--

150

mA

234V

41030k

Ω

)

7

Add

)

8

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

9)

External pull up resistor required for open load detection in off state.

, if

I

ST

> 0, add

I

ST

, if

V

>5.5 V

IN

I

IN

Semiconductor Group 4