Siemens BTS555 Datasheet

PROFET® Target Data Sheet BTS555

)

Smart Highside High Current Power Switch

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Overtemperature protection

•

Overvoltage protection (including load dump)

•

Clamp of negative voltage at output

•

Fast deenergizing of inductive loads

•

Low ohmic inverse current operation

•

Reverse battery protection

•

Diagnostic feedback with load current sense

•

Open load detection via current sense

•

Loss of

•

Electrostatic discharge (ESD) protection

V

protection

bb

2)

1)

Product Summary

Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO)

Short circuit current limitation

Current sense ratio

Application

•

Power switch with current sense diagnostic

feedback for 12

•

Most suitable for loads with high inrush current

like lamps and motors; all types of resistive and inductive loads

•

Replaces electromechanical relays, fuses and discrete circuits

V and 24 V DC grounded loads

V

bb(AZ

V

ON(CL

V

bb(on

R

ON

I

L(ISO

I

L(SCp)

I

L :

TO-218AB/5

1

Straight leads

63 V

42

V

5.0 ... 34 V

2.9

mΩ

132 A 400 A

I

IS

25 000

5

General Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions.

3 & Tab

+ V

R

Voltage

source

Voltage sensor

2

IN

ESD

I

IN

V

IN

V

IS

Logic

I

IS

4

R

IS

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Output

Voltage

detection

Temperature

sensor

bb

Current

Sense

PROFET

bb

OUT



1, 5

I

L

Load GND

Load

Logic GND

1

) With additional external diode.

2)

Additional external diode required for energized inductive loads (see page 9).

Semiconductor Group Page 1 of 16 1998-Jan-14

Target Data Sheet BTS555

T

j,

T

)

Pin Symbol Function

1 OUT O 2 IN I Input, activates the power switch in case of short to ground

3V

4ISS

5 OUT O

bb

Output to the load. The pins especially in high current applications!

Positive power supply voltage, the tab is electrically connected to this pin.

+

In high current applications the tab should be used for the V instead of this pin

Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7)

Output to the load. The pins especially in high current applications!

4)

.

1 and 5 must be shorted with each other

3)

1 and 5 must be shorted with each other

3)

connection

bb

Maximum Ratings at

T

j = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection,

resistive load or L < tbd µH

=-40 ...+150°C:

j,start

Load current (short circuit current, see page 5) Load dump protection

5)

R

= 2 Ω,

I

R

= 0.1 Ω,

L

V

LoadDump

t

= 200 ms,

d

=

U

A

+

V

,

s

U

= 13.5 V

A

V

bb

V

bb

I

L

V

Load dump

42 V 34 V

self-limited A

)

6

80 V IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C

T T P

j stg tot

-40 ...+150

-55 ...+150 310 W

°C

Inductive load switch-off energy dissipation, single pulse V

= 12V,

I= tbd (>=20

page 10

Electrostatic discharge capability (ESD

Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ

Current through input pin (DC) Current through current sense status pin (DC)

see internal circuit diagrams on page 8

start

A, Z

= 150°C,

= 150°C const.,

C

= tbd mH, 0 Ω, see diagrams on

E

V

I I

AS

ESD

IN IS

tbd J

2.0 kV

+15 , -250 +15 , -250

mA

3)

Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy

4)

Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the tab.

5)

R

= internal resistance of the load dump test pulse generator.

I

6)

V

Load dump

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.

Semiconductor Group Page 2 1998-Jan-14

Thermal Characteristics

Symbol

V

T

I

Target Data Sheet BTS555

Parameter and Conditions

Values Unit

min typ max

Thermal resistance chip - case:

junction - ambient (free air):

R R

thJC thJA

-- -- 0.40

--

30 --

K/W

)

7

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at

T

j = -40 ... +150 °C,

Load Switching Capabilities and Characteristics

On-state resistance (Tab to pins 1,5, see measurement

circuit page 8)

Nominal load current9) (Tab to pins 1,5) ISO 10483-1/6.7:

Maximum load current in resistive range (Tab to pins 1,5)

see diagram on page 13 Turn-on time

11)

Turn-off time IIN to 10%

R

= 1 Ω ,

L

Slew rate on

R

= 1 Ω

L

Slew rate off

R

= 1 Ω

L

T

=-40...+150°C

j

11)

V

= 12 V unless otherwise specified

bb

I

V

IN

V

= 0,

I

L

= tbd V8),

bb

V

ON

= tbd (>=20) A,

L

= tbd (>=20) A,

I

= tbd A,

L

I

= tbd A,

L

= 0.5 V,

V

ON

T

c

= 1.8 V,

ON

= 1.8 V,

= 85 °C

T

= 25 °C:

j

T

= 150 °C:

j

T

= 150 °C: tbd tbd

j

T

= 150 °C:

j

10)

= 25 °C:

c

T

= 150 °C:

c

IIN to 90%

(10 to 30%

(70 to 40%

V

OUT

)

V V

OUT OUT

: :

R

ON

R

ON(Static)

I

L(ISO)

L(Max)

t

on

t

off

dV/dt

-dV/dt

on

off

min typ max

-- 2.4

4.6

2.9

5.7

mΩ

-- tbd tbd

111 132 -- A

tbd tbd

130

60

--

550 240

A

µs

-- 0.8 -- V/µs

Inverse Load Current Operation

On-state resistance (Pins 1,5 to pin 3)

V

= 12 V,

bIN

see diagram on page 10 Nominal inverse load current (Pins 1,5 to Tab)

V

= -0.5 V,

ON

Drain-source diode voltage (V

-

=

tbd (>=20) A,

L

7)

Thermal resistance R

8)

Decrease of V long as V

9)

Not tested, specified by design.

10)

T

is about 105°C under these conditions.

J

11)

See timing diagram on page 14.

I

= - tbd (>=20) A

L

T

= 85 °C

c

below 10 V causes slowly a dynamic increase of RON to a higher value of R

bb

> V

bIN

bIN(u) max

10

> Vbb)

out

= 0,

T

IN

thCH

j = +150°C

case to heatsink (about 0.25 K/W with silicone paste) not included!

, RON increase is less than 10 % per second for TJ < 85 °C.

T

= 25 °C:

j

T

= 150 °C:

j

R

ON(inv)

I

L(inv)

-

V

111 132 -- A

ON

-- 2.4

4.6

2.9

5.7

mΩ

-- tbd -- mV

ON(Static)

. As

Semiconductor Group Page 3 1998-Jan-14

Target Data Sheet BTS555

(

V

t

I

(

)

I

)

V

)

I

V

Parameter and Conditions Symbol Values Unit

at

T

j = -40 ... +150 °C,

Operating Parameters

Operating voltage

12

)

Undervoltage shutdown Undervoltage start of charge pump

see diagram page 15 Overvoltage protection

I

= 15 mA

bb

Standby current

I

= 0

IN

Protection Functions

Short circuit current limit (Tab to pins 1,5) V

= 12 V, time until shutdown max. 300 µs

ON

Short circuit shutdown delay after input current positive slope,

min. value valid only if input "off-signal" time exceeds 30 µs

Output clamp

inductive load switch off

Output clamp (inductive load switch off at

= 40 mA

L

OUT

=

bb

Short circuit shutdown detection voltage (pin 3 to pins 1,5)

15)

-

ON

ON(CL

V

= 12 V unless otherwise specified

bb

Fehler! Textmarke nicht definiert.,

= 0)

IN

13)

14)

T

= 25...+150°C:

j

T

=-40...+25°C:

j

T

=+150°C:

c

>

ON(SC)

L

(e.g. overvoltage

=-40°C:

j

= 150°C:

j

=-40°C:

c

=25°C:

c

= 40 mA:

= 20 A:

L

V

bb(on)

V

bIN(u)

bIN(ucp)

V

bIN(Z)

I

bb(off)

I

L(SCp)

d(SC)

-

V

OUT(CL)

ON(CL)

ON(SC)

min typ max

5.0 -- 34 V

-- 3.5 4.5 V

-- 5 6.5 V

60 62

--

-tbd tbd

--

66 15

25

460 400 280

--

25 60

-tbd tbd

µA

80 -- 300 µs

--

15 17

--

39 42 46 V

-- 6 -- V

V

A

V

12)

For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.

13)

14)

15)

= V

- V

V

bIN

(typ.) the charge pump is not active and See also This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode is used, V

bb

see diagram on page 8. When

IN

V

OUT

in circuit diagram on page 9.

ON(CL)

is clamped to Vbb- V

V

at inductive load switch off.

ON(CL)

OUT

V

increases from less than V

bIN

≈

V

- 3 V.

bb

bIN(u)

up to

V

bIN(ucp)

= 5 V

Semiconductor Group Page 4 1998-Jan-14

Target Data Sheet BTS555

V

I

)

R

T

j

k

I

,

V

I

50

I

25

I

10

)

Parameter and Conditions Symbol Values Unit

at

T

j = -40 ... +150 °C,

V

= 12 V unless otherwise specified

bb

min typ max

Thermal overload trip temperature

Thermal hysteresis ∆

Reverse Battery

Reverse battery voltage On-state resistance (Pins 1,5 to pin 3)

= -12V,

bb

IN

= 0,

16)

= - tbd (>=20

L

A,

= 1 kΩ

IS

T

= 25 °C:

j

=

150 °C: Integrated resistor in Vbb line

Diagnostic Characteristics

Current sense ratio, static on-condition, -40°C:

=

ILIS

<

IS

:

L

IS

- 5 ??? V,

OUT

< 1.5 V

ON

see diagram on page 12

I

= 0 (e.g. during deenergizing of inductive loads):

IN

17)

, 25°C:

> 4.5 V 150°C:

bIN

= 180 A:

L

=

L

=

L

=

L

A: A: A:

T

jt

T

-

V

R

ON(rev)

R

bb

k

ILIS

bb

150 -- -- °C

jt

-- 10 -- K

-- -- 16 V

--

2.8

-- 120 --

--

26 530

--

25 430

--

23 520

-40°C:

±4.5% ±8.9%

±15% ±46%

+25°C:

±4.2% ±7.5%

±12% ±36%

0

tbd

0

--

150°C:

±4.0% ±6.1% ±9.0%

±24%

mΩ

Ω

-- 0 --

Sense current saturation

I

IS,lim

6.5 -- -- mA

Current sense leakage current

I

= 0,

V

IN

V

= 0,

V

IN

Current sense settling time

slope (90% of

I

static)

IS

Current sense settling time

slope (10% of

I

static)

IS

Current sense settling time

current (60% to 90%)

Overvoltage protection

I

= 15 mA

bb

16)

The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions ( transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9.

17)

If VON is higher, the sense current is no longer proportional to the load current due to sense current

I

saturation, see

18)

Not tested, specified by design.

IS,lim

.

18)

after positive input

I

= 0 / tbd (>=20) A:

L

18)

after negative input

I

= tbd (>=20) / 0 A:

L

18)

after change of load

I

= 15 / tbd (>=20) A:

L

T

= 0,

IS

T

= 25...+150°C:

j

= 0:

IS

I

L

=-40°C:

j

≤ 0:

I

IS(LL)

I

IS(LH)

t

son(IS

t

soff(IS

t

slc(IS)

V

bIS(Z)

--

-2

-- tbd 500

60 62

I

IN

--

66

=

I

= 0) the power

IS

0.5

--

µA

µs

V

Semiconductor Group Page 5 1998-Jan-14