Siemens BTS550P Datasheet

PROFET® Preliminary Data Sheet BTS550P

)

Smart Highside High Current Power Switch

Features

•

Overload protection

•

Current limitat ion

•

Short circuit pr otection

•

Overtemperature protection

•

Overvoltage protection (including load dump)

•

Clamp of negative volt age at output

•

Fast deenergizing of induc tive loads

•

Low ohmic inverse current operation

•

Reverse battery pr otection

•

Diagnostic feedback with load current sense

•

Open load detection via c ur r ent sense

•

Loss of

•

Electrostatic discharge (ESD) protection

V

protection

bb

2)

1)

Application

•

Power switch with c ur r ent sense diagnostic

feedback for 12

•

Most suitable f or loads with high inrush current

like lamps and motors; all types of res is tive and inductive loads

•

Replaces electromechanic al r elay s , fuses and

discrete circuits

V and 24 V DC grounded loads

Product Summary

Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO)

Short circuit current l i m i t ation

Current sense ratio

TO-218AB/5

Straight leads

V

bb(AZ)

V

ON(CL

V

bb(on)

R

ON

I

L(ISO)

I

L(SCp)

I

L :

1

63 V

42

V

5.0 ... 34 V

4.0

mΩ

97 A

180 A

I

IS

21000

5

General Description

N channel vertical power F E T with charge pump, c ur r ent controlled input and diagnos tic feedback with load current sense, integrated in Smart S IPMOS chip on chip technology. Fully protected by em bedded pr otection functions.

3 & Tab

+ V

R

Voltage

source

Voltage sensor

2

IN

ESD

I

IN

V

IN

V

IS

Logic

I

IS

4

R

IS

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Output

Voltage

detection

Temperature

sensor

bb

Current

Sense

PROFET

bb

OUT



1, 5

I

L

Load GND

Load

Logic GND

1

) With additional ext er nal diode.

2)

Additional external diode requir ed for energized inductive loads ( s ee page 8) .

Semiconductor Group Page 1 of 15 1998-Aug-31

Preliminary Data Sheet BTS550P

Pin Symbol Function

1OUTO

2 IN I Input, act iv ates the power switc h in c as e of short to gr ound 3V

4ISS

5OUTO

bb

Output to the load. The pins especially in high current applic ations!

Positive power supply v oltage, the tab is elec trically connect ed to this pin.

+

In high current applications the tab should be used for the V

4)

instead of this pin Diagnostic feedback pr ov iding a s ens e c ur r ent proportional to t he load

current; zer o c ur r ent on failure (see Tr uth Table on page 6) Output to the load. The pins

especially in high current applic ations!

.

1 and 5 must be shorted with each other

3)

1 and 5 must be shorted with each other

3)

connection

bb

Maximum Ratings at

T

j = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection,

T

=-40 ...+150°C:

j,start

Load current (short circuit current, see page 4) Load dump protection

5)

R

= 2 Ω,

I

R

= 0.54 Ω,

L

V

LoadDump

t

= 200 ms,

d

=

U

A

+

V

s

,

U

= 13.5 V

A

V

bb

V

bb

I

L

V

Load dump

42 V 34 V

self-limited A

)

6

90 V IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C

T T P

j stg tot

-40 ...+150

-55 ...+150 360 W

°C

Inductive load switch-off energy dissipation, single pulse V

= 12V,

bb

I

= 20 A, ZL = 15 mH, 0 Ω, see diagrams on page 9

L

Electrostatic discharge capability (ESD)

Human Body Model acc. M IL-STD883D, method 3015.7 and ESD assn. std. S 5.1-1993, C = 100 pF , R = 1.5 kΩ

Current through input pin (DC) Current through current sense status pin (DC)

see internal circuit diagr am s on page 6 and 7

T

j,start

= 150°C,

T

= 150°C const.,

C

E V

I I

AS

ESD

IN IS

+15 , -250 +15 , -250

3J 4kV

mA

3)

Not shorting all outputs will considerably increas e the on-state r es is tance, reduce the peak c ur r ent capability and decrease t he c ur r ent sense accuracy

4)

Otherwise add up to 0.5 mΩ (depending on used length of t he pin) to the RON if the pin is used inst ead of the tab.

5)

R

= internal resis tance of the load dump t es t pulse generator.

I

6)

V

Load dump

is setup without the DUT connected t o the generator per I S O 7637-1 and DIN 40839.

Semiconductor Group Page 2 1998-Aug-31

Preliminary Data Sheet BTS550P

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

)

7

Thermal resistance chip - case:

junction - ambient (free air):

R R

thJC thJA

-- -- 0.35

--

30 --

K/W

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at

T

j = -40 ... +150 °C,

Load Switching Capabilities and Characteristics

On-state resistance (Tab to pins 1,5, s ee m eas ur em ent

circuit page 6)

Nominal load current9) (Tab to pins 1, 5) ISO 10483-1/6.7:

Maximum load current in resistive range (Tab to pins 1,5)

see diagram on page 12 Turn-on time Turn-off time IIN to 10%

R

= 1 Ω ,

L

T

=-40...+150°C

j

Slew rate on

R

= 1 Ω ,

L

T

=25°C

j

Slew rate off

R

= 1 Ω ,

L

T

=25°C

j

V

= 12 V unless otherwis e s pec ified

bb

I

= 20 A,

L

V

= 0,

I

V

ON

V

I

L

I

ON

OUT

= 20 A,

L

= 120 A,

= 20 A,

L

T

= 85 °C

c

= 1.8 V,

)

T

IN

V

= 6V8),

bb

V

= 0.5 V,

ON

V

11)

IIN to 90%

11)

(10 to 30%

11)

(70 to 40%

min typ max

T

= 25 °C:

j

T

= 150 °C:

j

T

= 150 °C: -- 8

j

T

= 150 °C:

j

10)

T

= 25 °C:

c

= 150 °C:

c

V

OUT

V

OUT

: :

R

ON

R

ON(Static)

I

L(ISO)

I

L(Max)

t

on

t

off

dV/dt

-dV/dt

on

off

-- 3.3

6.4

-- 9 12

80 97 -- A

350 180

140

40

--

-- 0.45 -- V/µs

-- 0.55 -- V/µs

4.0

7.8

600 150

--

mΩ

A

µs

Inverse Load Current Operation

On-state resistance (Pins 1,5 to pin 3)

V

= 12 V,

bIN

see diagram on page 9 Nominal inverse load current (Pins 1,5 to Tab)

V

= -0.5 V,

ON

Drain-source diode voltage (V

I

-

=

20 A,

L

7)

Thermal resist anc e R

8)

Decrease of V long as V

9)

Not tested, s pec ified by design.

10)

T

is about 105°C under thes e c onditions.

J

11)

See timing diagram on page 13.

I

bIN

IN

I

= - 20 A

L

T

= 85 °C

c

= 0,

below 10 V causes a slowly a dynamic inc r eas e of RON to a higher value of R

bb

> V

bIN(u) max

10

> V

out

T

j = +150°C

case to heatsink ( about 0.25 K/W with silicone paste) not included!

thCH

, RON increase is less than 10 % per s ec ond for TJ < 85 °C.

bb

T

)

T

= 25 °C:

j

= 150 °C:

j

R

ON(inv)

I

L(inv)

-

V

ON

-- 3.3

80 97 -- A

-- 0.8 -- V

6.4

4.0

7.8

ON(Static)

mΩ

. As

Semiconductor Group Page 3 1998-Aug-31

Preliminary Data Sheet BTS550P

I

Parameter and Conditions Symbol Values Unit

at

T

j = -40 ... +150 °C,

Operating Parameters

Operating voltage ( Undervoltage shutdown Undervoltage start of charge pump

see diagram page 14 Overvoltage protection

I

= 15 mA

bb

Standby current

I

= 0

IN

Protection Functions

Short circuit current limit (Tab to pins 1,5) V

= 12 V, time until shutdown max. 350 µs

ON

Short circuit shutdown delay after input current positive slope,

min. value valid only if input "off-s ignal" time exceeds 30 µs

Output clamp (inductive load switch off)

Output clamp (inductive load switch off) at

V

=

V

bb

I

= 40 mA

L

OUT

Short circuit shutdown detection voltage (pin 3 to pins 1,5)

Thermal overload trip temperature Thermal hysteresis

15)

-

V

ON

V

ON(CL)

V

= 12 V unless otherwis e s pec ified

bb

= 0)

13)

14)

8, 12)

T

= 25...+150°C:

j

T

=-40...+25°C:

j

V

IN

T

=+150°C:

c

>

V

ON(SC)

L

(e.g. overvoltage)

=-40°C:

j

= 150°C:

j

=-40°C:

c

=25°C:

c

= 40 mA:

= 20 A:

L

V

bb(on)

V

bIN(u)

V

bIN(ucp)

V

bIN(Z)

I

bb(off)

I

L(SCp)

t

d(SC)

-

V

OUT(CL)

V

ON(CL)

V

ON(SC)

T

jt

∆

T

jt

min typ max

5.0 -- 34 V

2.0 3.0 4.5 V

3.5 4.5 6.0 V

60 62

--

120

--

66 15

25

170 180 170

25 50

250

--

V

µA

A

80 -- 350 µs

----16.8

19.0

--

V

39 42 46.5 V

-- 6 -- V

150 -- -- °C

-- 10 -- K

12)

If the device is turned on before a V For the voltage r ange 0..34 V the device is fully protect ed agains t overtemperat ur e and s hor t circuit.

13)

14)

15)

= V

- V

V

bIN

(typ.) t he c har ge pum p is not active and See also This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 7). If the diode

is used, V

bb

see diagram on page 6. When

IN

V

OUT

in circuit diagram on page 7.

ON(CL)

is clamped to Vbb- V

-decrease, the oper ating voltage range is ext ended down to

bb

V

increases from les s than V

bIN

V

≈

V

OUT

at inductive load swit c h off.

ON(CL)

bb

- 3 V.

bIN(u)

up to

V

bIN(ucp)

V

bIN(u)

= 5 V

.

Semiconductor Group Page 4 1998-Aug-31

Preliminary Data Sheet BTS550P

I

T

j

T

j

k

I

,

T

j

V

I

T

j

V

T

j

V

T

j

I

T

j

T

j

T

j

I

T

j

T

j

12

)

Parameter and Conditions Symbol Values Unit

at

T

j = -40 ... +150 °C,

Reverse Battery

Reverse battery voltage On-state resistance (Pins 1,5 to pin 3)

V

= -12V,

bb

V

IN

= 0,

V

= 12 V unless otherwis e s pec ified

bb

16)

I

= - 20 A,

L

R

= 1 kΩ

IS

T

j

T

= 25 °C:

j

= 150 °C:

-

V

R

ON(rev)

bb

min typ max

-- -- 32 V

--

3.8

--

4.6 9

mΩ

Integrated resistor in Vbb line

Diagnostic Characteristics

Current sense ratio, static on-condition,

=

ILIS

ON IS

bIN

L

< 1.5 V

<

OUT

> 4.0 V

:

IS

17)

- 5 v,

,

see diagram on page 11

IIS=0 by

I

=0 (e.g. during deenergiz ing of inductive loads):

IN

Sense current saturation Current sense leakage current

Current sense settling time Overvoltage protection

I

= 15 mA

bb

18)

= 120 A,

L

= 20 A,

L

= 12 A,

L

V

= 0,

IN

T

=-40°C:

=25°C:

=150°C:

=-40°C:

=25°C:

=150°C:

=-40°C:

=25°C:

=150°C:

= 6 A,

=-40°C:

=25°C:

T

=150°C:

j

I

= 0,

IS

T

=-40°C:

j

V

IS

I

L

IN

V

= 25...+150°C:

j

= 0:

≤ 0:

R

bb

k

ILIS

I

IS,lim

I

IS(LL)

I

IS(LH)

t

s(IS)

V

bIS(Z)

-- 120 --

19 000 19 000 18 400 19 300 19 500 18 500 19 000 19 000 17 500 17 000 17 000 17 000

21 100 20 900 19 600 22 500 21 500 20 500 23 000 22 500 20 000 26 000 23 800 20 000

22 500 22 500 22 000 25 500 24 800 23 000 27 500 26 000 22 000 42 000 33 000 26 000

6.5 -- -- mA

--

0.5

2

--

-- -- 500

60 62

--

66

--

Ω

µA

µs

V

Input

Input and operating current (see diagram page IN grounded (V

Input current for turn-off

16)

The reverse load curr ent through the intr ins ic dr ain- s our c e diode has to be limited by the c onnec ted load (as it is done with all polarity symmetric loads). Note that under off-conditions ( transistor is not activated. This results in r ais ed power dis s ipation due to the higher volt age dr op ac r os s the intrinsic drain-sour c e diode. The temperat ur e pr otection is not ac tive during reverse cur r ent operation! Increasing reverse battery voltage capability is simply possible as described on page 8.

17)

If VON is higher, the sense c ur r ent is no longer proportional t o the load current due t o s ens e c ur r ent saturation, s ee

18)

Not tested, s pec ified by design.

19)

We recommend the r es is tance between IN and GND to be less than 0.5

kΩ for turn-off. Consider that when the device is s witched off (I

500 reaches almost V

IN

= 0)

I

IS,lim

bb

19)

.

I

IN(on)

I

IN(off)

-- 0.8 1.5 mA

-- -- 80 µA

I

=

I

IN

= 0) the power

IS

kΩ for turn-on and more than

= 0) the voltage between IN and GND

IN

Semiconductor Group Page 5 1998-Aug-31