Siemens BTS542E2 Datasheet

Smart Highside Power Switch

5

Standard

PROFET® BTS 542 E2

Features

·

Overload protection

·

Current limitation

·

Short-circuit protection

·

Thermal shutdown

·

Overvoltage protection (including load dump)

·

Fast demagnetization of inductive loads

·

Reverse battery protection

·

Undervoltage and overvoltage shutdown with

1

)

Product Summary

Overvoltage protection Operating voltage

On-state resistance Load current (ISO) Current limitation

V

bb(AZ)

V

bb(on)

R

ON

I

L(ISO)

I

L(SCr)

63 V

4.5 ... 42 V 18 21 A 70 A

auto-restart and hysteresis

·

Open drain diagnostic output

·

Open load detection in ON-state

·

CMOS compatible input

·

Loss of ground and loss of

·

Electrostatic discharge (ESD) protection

V

protection

bb

2)

TO-218AB/5

Application

·

mC compatible power switch with diagnostic

feedback for 12 V and 24 V DC grounded loads

·

All types of resistive, inductive and capacitve loads

·

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions.

m

W

bb

PROFET

+ V

bb

OUT

3

5

Load



R

Voltage

source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Open load

detection

Short circuit

Gate

protection

Limit for

ind. loads

detection

Temperature

sensor

1

Signal GND

Load GND

1)

No external components required, reverse load current limited by connected load.

2)

Additional external diode required for charged inductive loads

Semiconductor Group Page 1 of 13 8.Jan.96

BTS 542 E2

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3Vbb+ Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5OUT

O Output to the load

(Load, L)

Maximum Ratings at

T

j = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Load dump protection

R

= 2 W,

I

R

= 1.1 W,

L

V

LoadDump

t

= 200 ms, IN= low or high

d

=

U

+

V

,

A

U

s

A

= 13.5 V

Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC)

V

bb

V

Load dump

I

L

T

j

T

stg

P

tot

63 V

3

)

80 V

self-limited A

-40 ...+150

°C

-55 ...+150 167 W

Inductive load switch-off energy dissipation, single pulse

Electrostatic discharge capability (ESD)

T

=150 °C:

j

E V

AS

ESD

2.1 J

2.0 kV

(Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6...

V I I

IN ST

IN

-0.5 ... +6 V

± ±

5.0

mA

Thermal resistance chip - case:

junction - ambient (free air):

3)

V

Load dump

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

R R

thJC thJA

£

0.75

£

K/W

45

Semiconductor Group Page 2 8.Jan.96

Electrical Characteristics

Values

min

--

17

j

--

100

10

0.2

0.4

4.5

2.4

--

42

--

60

63

--

BTS 542 E2

Parameter and Conditions Symbol

at

T

j = 25 °C,

V

= 12 V unless otherwise specified

bb

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

I

= 5 A

L

Nominal load current (pin 3 to 5) ISO Proposal:

V

ON

= 0.5 V,

T

= 85 °C

C

Output current (pin 5) while GND disconnected or

GND pulled up,

T

=-40...+150°C

V

= 0, see diagram page 7,

IN

Turn-on time to 90% Turn-off time to 10%

R

= 12

L

W

,

T

=-40...+150°C

j

Slew rate on 10 to 30%

V

OUT

,

R

= 12

W

,

T

L

=-40...+150°C

j

Slew rate off 70 to 40%

V

OUT

,

R

= 12

W

,

T

L

=-40...+150°C

j

T

=25 °C:

j

T

=150 °C:

j

V V

OUT OUT

: :

R

I

t t

dV /dt

-dV/dt

ON

L(ISO)

L(GNDhigh)

on off

on

off

Unit

typ max

15 28

18 35

m

21 -- A

-- 1 mA

--

350

--

130

-- 2 V/ms

-- 5 V/ms

W

m

s

Operating Parameters

Operating voltage 4) Undervoltage shutdown Undervoltage restart

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

Undervoltage restart of charge pump see diagram page 12

T

=-40...+150°C:

j

Undervoltage hysteresis

D

V

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

bb

Standby current (pin 3)

V

IN

=

=40 mA

=0

V

bb(u rst)

-

V

bb(under)

5)

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

Leakage output current (included in

IN=0

V

=5 V

IN

V

Operating current (Pin 1)6),

T

=-40°C:

j

=25...+150°C:

j

=-40...+25°C:

j

T

=150°C:

j

I

)

bb(off)

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

D

V

bb(under)

V

bb(over)

V

bb(o rst)

D

V

bb(over)

V

bb(AZ)

I

bb(off)

I

L(off)

I

GND

-- 42 V

-- 4.5 V

6.5 7.5 V

0.2 -- V

-- 52 V

-- -- V

0.2 -- V

--

-- V

67 12

18

6--

25 60

m

A

m

A

1.1 -- mA

4)

At supply voltage increase up to

5) 6

)

see also Add

V

I

, if

ST

in table of protection functions and circuit diagram page 7. Meassured without load.

ON(CL)

I

> 0, add

ST

I

IN

, if

V

= 6.5 V typ without charge pump,

bb

V

>5.5 V

IN

V

OUT

»

V

- 2 V

bb

Semiconductor Group Page 3 8.Jan.96

BTS 542 E2

Values

min

--

45

30

80

--

150

--

2

Parameter and Conditions Symbol

at

T

j = 25 °C,

V

= 12 V unless otherwise specified

bb

Protection Functions

Initial peak short circuit current limit (pin 3 to 5)7), ( max 400 ms if

V

ON

>

V

ON(SC)

)

=-40°C:

T

j

=25°C:

T

j

=+150°C:

T

j

Repetitive short circuit current limit

T

=

T

(see timing diagrams, page 10)

j

jt

I

L(SCp)

I

L(SCr)

Short circuit shutdown delay after input pos. slope

V

>

V

ON

min value valid only, if input "low" time exceeds 30

ON(SC)

,

T

=-40..+150°C:

j

m

s

t

d(SC)

Output clamp (inductive load switch off) at

V

OUT

=

V

bb

-

V

ON(CL)

,

I

= 30 mA

L

V

ON(CL)

Short circuit shutdown detection voltage (pin 3 to 5)

Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation8),

T

Reverse battery (pin 3 to 1) Integrated resistor in

= 150 °C, single pulse

j Start

V

bb

line

9)

V V

bb bb

= 12 V: = 24 V:

V

ON(SC)

T

jt

D

T

E

AS

E

Load12

E

Load24

-

V

bb

R

bb

jt

Unit

typ max

--

140

95

--

70 -- A

-- 400

58 -- V

8.3 -- V

-- -- °C

10 -- K

-- 2.1

1.7

1.2

-- 32 V

120 --

A

m

s

J

W

Diagnostic Characteristics

Open load detection current

(on-condition)

7)

Short circuit current limit for max. duration of t

8)

While demagnetizing load inductance, dissipated energy in PROFET is

V

= 1/

*

L

*

I

2

L

E

AS

9)

Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current I these condition is dependent on the size of the heatsink. Reverse I external GND-resistor (150 W). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

2

ON(CL)

* (

V

ON(CL)

of » 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under

GND

), see diagram page 8

-

V

bb

T

=-40 °C:

j

T

=25..150°C:

j

d(SC) max

I

L (OL)

=400 ms, prior to shutdown

E

= òò

V

AS

can be reduced by an additional

GND

ON(CL)

----1900 1500

*

i

(t) dt, approx.

L

mA

Semiconductor Group Page 4 8.Jan.96

Siemens BTS542E2 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual