Siemens BTS542D2 Datasheet

PROFET® BTS 542 D2

Semiconductor Group Page 1 of 13 13.Nov.95

Smart Highside Power Switch

Features

·

Overload protection

·

Current limitation

·

Short-circuit protection

·

Thermal shutdown

·

Overvoltage protection (including load dump)

·

Fast demagnetization of inductive loads

·

Reverse battery protection

1

)

·

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

·

CMOS diagnostic output

·

Open load detection in ON-state

·

CMOS compatible input

·

Loss of ground and loss of

V

bb

protection

2)

·

Electrostatic discharge (ESD) protection

Application

·

mC compatible power switch with diagnostic

feedback for 12 V and 24 V DC grounded loads

·

All types of resistive, inductive and capacitve loads

·

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions.

+ V

bb

IN

ST

Signal GND

ESD

PROFET



OUT

GND

Logic

Voltage

sensor

Voltage

source

Open load

detection

Short circuit

detection

Charge pump

Level shifter

Temperature

sensor

Rectifier

Limit for

unclamped

ind. loads

Gate

protection

Current

limit

2

4

1

3

5

Load GND

Load

V

Logic

Overvoltage

protection

R

bb

1)

No external components required, reverse load current limited by connected load.

2)

Additional external diode required for charged inductive loads

Product Summary

Overvoltage protection

V

bb(AZ)

63 V

Operating voltage

V

bb(on)

4.5 ... 42 V

On-state resistance

R

ON

18

m

W

Load current (ISO)

I

L(ISO)

21 A

Current limitation

I

L(SCr)

70 A

TO-218AB/5

5

Standard

BTS 542 D2

Semiconductor Group Page 2 13.Nov.95

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3Vbb+ Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5OUT

(Load, L)

O Output to the load

Maximum Ratings at

T

j = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3)

V

bb

63 V

Load dump protection

V

LoadDump

=

U

A

+

V

s

,

U

A

= 13.5 V

R

I

= 2 W,

R

L

= 1.1 W,

t

d

= 200 ms, IN= low or high

V

Load dump

3

)

80 V

Load current (Short-circuit current, see page 4)

I

L

self-limited A Operating temperature range Storage temperature range

T

j

T

stg

-40 ...+150

-55 ...+150

°C

Power dissipation (DC)

P

tot

167 W

Inductive load switch-off energy dissipation, single pulse

T

j

=150 °C:

E

AS

2.1 J

Electrostatic discharge capability (ESD) (Human Body Model)

V

ESD

2.0 kV

Input voltage (DC)

V

IN

-0.5 ... +6 V Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6...

I

IN

I

ST

±

5.0

±

5.0

mA

Thermal resistance chip - case:

junction - ambient (free air):

R

thJC

R

thJA

£

0.75

£

45

K/W

3)

V

Load dump

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

BTS 542 D2

Semiconductor Group Page 3 13.Nov.95

Electrical Characteristics

Parameter and Conditions Symbol

Values

Unit

at

T

j = 25 °C,

V

bb

= 12 V unless otherwise specified

min

typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

I

L

= 5 A

T

j

=25 °C:

T

j

=150 °C:

R

ON

--

15 28

18 35

m

W

Nominal load current (pin 3 to 5) ISO Proposal:

V

ON

= 0.5 V,

T

C

= 85 °C

I

L(ISO)

17

21 -- A

Output current (pin 5) while GND disconnected or

GND pulled up,

V

IN

= 0, see diagram page 7,

T

j

=-40...+150°C

I

L(GNDhigh)

--

-- 1 mA

Turn-on time to 90%

V

OUT

:

Turn-off time to 10%

V

OUT

:

R

L

= 12

W

,

T

j

=-40...+150°C

t

on

t

off

100

10

--

350 130

m

s

Slew rate on 10 to 30%

V

OUT

,

R

L

= 12

W

,

T

j

=-40...+150°C

dV /dt

on

0.2

-- 2 V/ms

Slew rate off 70 to 40%

V

OUT

,

R

L

= 12

W

,

T

j

=-40...+150°C

-dV/dt

off

0.4

-- 5 V/ms

Operating Parameters

Operating voltage 4)

T

j

=-40...+150°C:

V

bb(on)

4.5

-- 42 V

Undervoltage shutdown

T

j

=-40...+150°C:

V

bb(under)

2.4

-- 4.5 V

Undervoltage restart

T

j

=-40...+150°C:

V

bb(u rst)

--

-- 4.5 V

Undervoltage restart of charge pump see diagram page 12

T

j

=-40...+150°C:

V

bb(ucp)

--

6.5 7.5 V

Undervoltage hysteresis

D

V

bb(under)

=

V

bb(u rst)

-

V

bb(under)

D

V

bb(under)

--

0.2 -- V

Overvoltage shutdown

T

j

=-40...+150°C:

V

bb(over)

42

-- 52 V

Overvoltage restart

T

j

=-40...+150°C:

V

bb(o rst)

42

-- -- V

Overvoltage hysteresis

T

j

=-40...+150°C:

D

V

bb(over)

--

0.2 -- V

Overvoltage protection

5)

T

j

=-40°C:

I

bb

=40 mA

T

j

=25...+150°C:

V

bb(AZ)

60

63

--

67

-- V

Standby current (pin 3)

T

j

=-40...+25°C:

V

IN

=0, IST=0,

T

j

=150°C:

I

bb(off)

--

12 18

25 60

m

A

Leakage output current (included in

I

bb(off)

)

V

IN=0

I

L(off)

--

6--

m

A

Operating current (Pin 1)6),

V

IN

=5 V

I

GND

--

1.1 -- mA

4)

At supply voltage increase up to

V

bb

= 6.5 V typ without charge pump,

V

OUT

»

V

bb

- 2 V

5)

see also

V

ON(CL)

in table of protection functions and circuit diagram page 7. Meassured without load.

6

)

Add

I

ST

, if

I

ST

> 0, add

I

IN

, if

V

IN

>5.5 V

BTS 542 D2

Parameter and Conditions Symbol

Values

Unit

at

T

j = 25 °C,

V

bb

= 12 V unless otherwise specified

min

typ max

Semiconductor Group Page 4 13.Nov.95

Protection Functions

Initial peak short circuit current limit (pin 3 to 5)7), ( max 400 ms if

V

ON

>

V

ON(SC)

)

I

L(SCp)

T

j

=-40°C:

T

j

=25°C:

T

j

=+150°C:

--

45

--

95

--

140

--

A

Repetitive short circuit current limit

I

L(SCr)

T

j

=

T

jt

(see timing diagrams, page 10)

30

70 -- A

Short circuit shutdown delay after input pos. slope

V

ON

>

V

ON(SC)

,

T

j

=-40..+150°C:

min value valid only, if input "low" time exceeds 30

m

s

t

d(SC)

80

-- 400

m

s

Output clamp (inductive load switch off) at

V

OUT

=

V

bb

-

V

ON(CL)

,

I

L

= 30 mA

V

ON(CL)

--

58 -- V

Short circuit shutdown detection voltage (pin 3 to 5)

V

ON(SC)

--

8.3 -- V

Thermal overload trip temperature

T

jt

150

-- -- °C

Thermal hysteresis

D

T

jt

--

10 -- K

Inductive load switch-off energy dissipation8),

T

j Start

= 150 °C, single pulse

V

bb

= 12 V:

V

bb

= 24 V:

E

AS

E

Load12

E

Load24

--

-- 2.1

1.7

1.2

J

Reverse battery (pin 3 to 1)

9)

-

V

bb

--

-- 32 V

Integrated resistor in

V

bb

line

R

bb

--

120 --

W

Diagnostic Characteristics

Open load detection current

T

j

=-40 °C:

(on-condition)

T

j

=25..150°C:

I

L (OL)

2

----1900 1500

mA

7)

Short circuit current limit for max. duration of t

d(SC) max

=400 ms, prior to shutdown

8)

While demagnetizing load inductance, dissipated energy in PROFET is

E

AS

= òò

V

ON(CL)

*

i

L

(t) dt, approx.

E

AS

= 1/

2

*

L

*

I

2 L

* (

V

ON(CL)

V

ON(CL)

-

V

bb

), see diagram page 8

9)

Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current I

GND

of » 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under

these condition is dependent on the size of the heatsink. Reverse I

GND

can be reduced by an additional external GND-resistor (150 W). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).