PROFET® BTS 542 D2
Semiconductor Group Page 1 of 13 13.Nov.95
Smart Highside Power Switch
Features
·
Overload protection
·
Current limitation
·
Short-circuit protection
·
Thermal shutdown
·
Overvoltage protection (including load dump)
·
Fast demagnetization of inductive loads
·
Reverse battery protection
1
)
·
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
·
CMOS diagnostic output
·
Open load detection in ON-state
·
CMOS compatible input
·
Loss of ground and loss of
V
bb
protection
2)
·
Electrostatic discharge (ESD) protection
Application
·
mC compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
·
All types of resistive, inductive and capacitve loads
·
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection
functions.
+ V
bb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
R
bb
1)
No external components required, reverse load current limited by connected load.
2)
Additional external diode required for charged inductive loads
Product Summary
Overvoltage protection
V
bb(AZ)
63 V
Operating voltage
V
bb(on)
4.5 ... 42 V
On-state resistance
R
ON
18
m
W
Load current (ISO)
I
L(ISO)
21 A
Current limitation
I
L(SCr)
70 A
TO-218AB/5
5
Standard
BTS 542 D2
Semiconductor Group Page 2 13.Nov.95
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3Vbb+ Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5OUT
(Load, L)
O Output to the load
Maximum Ratings at
T
j = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3)
V
bb
63 V
Load dump protection
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
= 2 W,
R
L
= 1.1 W,
t
d
= 200 ms, IN= low or high
V
Load dump
3
)
80 V
Load current (Short-circuit current, see page 4)
I
L
self-limited A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC)
P
tot
167 W
Inductive load switch-off energy dissipation,
single pulse
T
j
=150 °C:
E
AS
2.1 J
Electrostatic discharge capability (ESD)
(Human Body Model)
V
ESD
2.0 kV
Input voltage (DC)
V
IN
-0.5 ... +6 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
I
IN
I
ST
±
5.0
±
5.0
mA
Thermal resistance chip - case:
junction - ambient (free air):
R
thJC
R
thJA
£
0.75
£
45
K/W
3)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS 542 D2
Semiconductor Group Page 3 13.Nov.95
Electrical Characteristics
Parameter and Conditions Symbol
Values
Unit
at
T
j = 25 °C,
V
bb
= 12 V unless otherwise specified
min
typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 5 A
T
j
=25 °C:
T
j
=150 °C:
R
ON
--
15
28
18
35
m
W
Nominal load current (pin 3 to 5)
ISO Proposal:
V
ON
= 0.5 V,
T
C
= 85 °C
I
L(ISO)
17
21 -- A
Output current (pin 5) while GND disconnected or
GND pulled up,
V
IN
= 0, see diagram page 7,
T
j
=-40...+150°C
I
L(GNDhigh)
--
-- 1 mA
Turn-on time to 90%
V
OUT
:
Turn-off time to 10%
V
OUT
:
R
L
= 12
W
,
T
j
=-40...+150°C
t
on
t
off
100
10
--
--
350
130
m
s
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
W
,
T
j
=-40...+150°C
dV /dt
on
0.2
-- 2 V/ms
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
W
,
T
j
=-40...+150°C
-dV/dt
off
0.4
-- 5 V/ms
Operating Parameters
Operating voltage 4)
T
j
=-40...+150°C:
V
bb(on)
4.5
-- 42 V
Undervoltage shutdown
T
j
=-40...+150°C:
V
bb(under)
2.4
-- 4.5 V
Undervoltage restart
T
j
=-40...+150°C:
V
bb(u rst)
--
-- 4.5 V
Undervoltage restart of charge pump
see diagram page 12
T
j
=-40...+150°C:
V
bb(ucp)
--
6.5 7.5 V
Undervoltage hysteresis
D
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
D
V
bb(under)
--
0.2 -- V
Overvoltage shutdown
T
j
=-40...+150°C:
V
bb(over)
42
-- 52 V
Overvoltage restart
T
j
=-40...+150°C:
V
bb(o rst)
42
-- -- V
Overvoltage hysteresis
T
j
=-40...+150°C:
D
V
bb(over)
--
0.2 -- V
Overvoltage protection
5)
T
j
=-40°C:
I
bb
=40 mA
T
j
=25...+150°C:
V
bb(AZ)
60
63
--
67
-- V
Standby current (pin 3)
T
j
=-40...+25°C:
V
IN
=0, IST=0,
T
j
=150°C:
I
bb(off)
--
--
12
18
25
60
m
A
Leakage output current (included in
I
bb(off)
)
V
IN=0
I
L(off)
--
6--
m
A
Operating current (Pin 1)6),
V
IN
=5 V
I
GND
--
1.1 -- mA
4)
At supply voltage increase up to
V
bb
= 6.5 V typ without charge pump,
V
OUT
»
V
bb
- 2 V
5)
see also
V
ON(CL)
in table of protection functions and circuit diagram page 7. Meassured without load.
6
)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
BTS 542 D2
Parameter and Conditions Symbol
Values
Unit
at
T
j = 25 °C,
V
bb
= 12 V unless otherwise specified
min
typ max
Semiconductor Group Page 4 13.Nov.95
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)7),
( max 400 ms if
V
ON
>
V
ON(SC)
)
I
L(SCp)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
--
--
45
--
95
--
140
--
--
A
Repetitive short circuit current limit
I
L(SCr)
T
j
=
T
jt
(see timing diagrams, page 10)
30
70 -- A
Short circuit shutdown delay after input pos. slope
V
ON
>
V
ON(SC)
,
T
j
=-40..+150°C:
min value valid only, if input "low" time exceeds 30
m
s
t
d(SC)
80
-- 400
m
s
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
,
I
L
= 30 mA
V
ON(CL)
--
58 -- V
Short circuit shutdown detection voltage
(pin 3 to 5)
V
ON(SC)
--
8.3 -- V
Thermal overload trip temperature
T
jt
150
-- -- °C
Thermal hysteresis
D
T
jt
--
10 -- K
Inductive load switch-off energy dissipation8),
T
j Start
= 150 °C, single pulse
V
bb
= 12 V:
V
bb
= 24 V:
E
AS
E
Load12
E
Load24
--
-- 2.1
1.7
1.2
J
Reverse battery (pin 3 to 1)
9)
-
V
bb
--
-- 32 V
Integrated resistor in
V
bb
line
R
bb
--
120 --
W
Diagnostic Characteristics
Open load detection current
T
j
=-40 °C:
(on-condition)
T
j
=25..150°C:
I
L (OL)
2
2
----1900
1500
mA
7)
Short circuit current limit for max. duration of t
d(SC) max
=400 ms, prior to shutdown
8)
While demagnetizing load inductance, dissipated energy in PROFET is
E
AS
= òò
V
ON(CL)
*
i
L
(t) dt, approx.
E
AS
= 1/
2
*
L
*
I
2
L
* (
V
ON(CL)
V
ON(CL)
-
V
bb
), see diagram page 8
9)
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
GND
of » 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse I
GND
can be reduced by an additional
external GND-resistor (150 W). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
BTS 542 D2
Parameter and Conditions Symbol
Values
Unit
at
T
j = 25 °C,
V
bb
= 12 V unless otherwise specified
min
typ max
Semiconductor Group Page 5 13.Nov.95
Input and Status Feedback
10)
Input turn-on threshold voltage
T
j
=-40..+150°C:
V
IN(T+)
1.5
-- 2.4 V
Input turn-off threshold voltage
T
j
=-40..+150°C:
V
IN(T-)
1.0
-- -- V
Input threshold hysteresis
D
V
IN(T)
--
0.5 -- V
Off state input current (pin 2),
V
IN
= 0.4 V
I
IN(off)
1
-- 30
m
A
On state input current (pin 2),
V
IN
= 3.5 V
I
IN(on)
10
25 50
m
A
Status invalid after positive input slope
(short circuit)
T
j
=-40 ... +150°C:
t
d(ST SC)
80
200 400
m
s
Status invalid after positive input slope
(open load)
T
j
=-40 ... +150°C:
t
d(ST)
350
-- 1600
m
s
Status output (CMOS)
T
j
=-40...+150°C,
I
ST
= - 50 mA:
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
Max. status current for current source (out):
valid status output, current sink (in) :
T
j
=-40...+150°C
V
ST(high)
11
)
V
ST(low)
-I
ST
+I
ST
12)
4.4----
--
5.1
--
--
--
6.5
0.4
0.25
1.6
V
mA
10)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
11)
VSt
high
»
V
bb
during undervoltage shutdown
12)
No current sink capability during undervoltage shutdown
BTS 542 D2
Semiconductor Group Page 6 13.Nov.95
Truth Table
Input- Output Status
level level 542
D2
542
E2
Normal
operation
L
H
L
H
H
H
H
H
Open load
L
H
13
)
H
H
L
H
L
Short circuit
to GND
L
H
L
L
H
L
H
L
Short circuit
to V
bb
L
H
H
H
H
H (L
14)
)
H
H (L
14)
)
Overtem-
perature
L
H
L
L
L
L
L
L
Under-
voltage
L
H
L
L
L
15)
L
15)
H
H
Overvoltage
L
H
L
L
L
L
H
H
L = "Low" Level
H = "High" Level
13)
Power Transistor off, high impedance
14)
Low resistance short
V
bb
to output may be detected by no-load-detection
15)
No current sink capability during undervoltage shutdown
Terms
PROFET
V
IN
ST
OUT
GND
bb
V
ST
V
IN
I
ST
I
IN
V
bb
I
bb
I
L
V
OUT
I
GND
V
ON
1
2
4
3
5
R
GND
Input circuit (ESD protection)
IN
GND
I
R
ZD ZD
I
I
I1 I2
ESD-
ZDI1 6.1 V typ., ESD zener diodes are not to be used
as voltage clamp at DC conditions. Operation in this
mode may result in a drift of the zener voltage
(increase of up to 1 V).
Status output
ST
V
Logic
GND
ESD-
ZD
Zener diode: 6.1 V typ., max 5 mA, V
Logic
5 V typ,
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
Short Circuit detection
Fault Condition:
V
ON
> 8.3 V typ.; IN high
Short circuit
detection
Logic
unit
+ V
bb
OUT
V
ON
BTS 542 D2
Semiconductor Group Page 7 13.Nov.95
Inductive and overvoltage output clamp
+ V
bb
OUT
GND
V
Z
V
ON
V
ON
clamped to 58 V typ.
Overvolt. and reverse batt. protection
+ V
bb
V
OUT
IN
ST
bb
R
Signal GND
Logic
PROFET
V
Z
R
GND
GND
IN
R
ST
R
Rbb = 120 W typ.,
V
Z
+
R
bb
*40 mA = 67 V typ., add
R
GND
, RIN, RST for extended protection
Open-load detection
ON-state diagnostic condition:
V
ON
<
R
ON
*
I
L(OL)
; IN
high
Open load
detection
Logic
unit
+ V
bb
OUT
ON
V
ON
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
IN
V
ST
V
GND
Any kind of load. In case of Input=high is
V
OUT
»
V
IN
-
V
IN(T+)
.
Due to V
GND
>0, no VST = low signal available.
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
GND
V
IN
V
ST
Any kind of load. If V
GND
>
V
IN
-
V
IN(T+)
device stays off
Due to V
GND
>0, no VST = low signal available.
Vbb disconnect with charged inductive
load
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
high
BTS 542 D2
Semiconductor Group Page 8 13.Nov.95
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
high
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
E
AS
bb
L
R
E
Load
Energy dissipated in PROFET EAS = Ebb + EL - ER.
E
Load
<
E
L
,
E
L
=
1
/
2
* L *
I
2
L
BTS 542 D2
Semiconductor Group Page 9 13.Nov.95
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type BTS 542D2 542E2
Logic version
D E
Overtemperature protection
T
j
>150 °C, latch function
16)17
)
T
j
>150 °C, with auto-restart on cooling
X
X
Short-circuit to GND protection
switches off when
V
ON
>8.3 V typ.
16)
(when first turned on after approx. 200 ms)
X X
Open load detection
in OFF-state with sensing current 30 mA typ.
in ON-state with sensing voltage drop across
power transistor
X X
Undervoltage shutdown with auto restart
X X
Overvoltage shutdown with auto restart
X X
Status feedback for
overtemperature
short circuit to GND
short to V
bb
open load
undervoltage
overvoltage
X
X
-
18)
X
X
X
X
X
-
18)
X
-
-
Status output type
CMOS
Open drain
X
X
Output negative voltage transient limit
(fast inductive load switch off)
to
V
bb
-
V
ON(CL)
X X
Load current limit
high level (can handle loads with high inrush currents)
medium level
low level
(better protection of application)
X X
16)
Latch except when
V
bb
-
V
OUT
<
V
ON(SC)
after shutdown. In most cases
V
OUT
= 0 V after shutdown (
V
OUT
¹
0 V only if forced externally). So the device remains latched unless
V
bb
<
V
ON(SC)
(see page 4). No latch
between turn on and t
d(SC)
.
17)
With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
18)
Low resistance short
V
bb
to output may be detected by no-load-detection
BTS 542 D2
Semiconductor Group Page 10 13.Nov.95
Timing diagrams
Figure 1a: Vbb turn on:
AA
AAAA
AAAA
AAAA
AAA
AAA
AAA
AAAAAAAA
AAA
AA
AAAAAAAAAAAAAA
AAA
AAA
AAAAAAA
AAAAA
AAAAAA
IN
V
OUT
t
V
ST CMOS
bb
A
A
t
d(bb IN)
in case of too early
V
IN
=high the device may not turn on (curve A)
t
d(bb IN)
approx. 150 ms
Figure 2a: Switching a lamp,
IN
ST
OUT
L
t
V
I
Figure 2b: Switching an inductive load
IN
ST
L
t
V
I
*)
OUT
t
d(ST)
I
L(OL)
*) if the time constant of load is too large, open-load-status may occur
Figure 3a: Turn on into short circuit,
IN
ST
OUT
L
t
V
I
t
d(SC)
t
d(SC)
approx. 200ms if
V
bb
-
V
OUT
> 8.3 V typ.
BTS 542 D2
Semiconductor Group Page 11 13.Nov.95
Figure 3b: Turn on into overload,
IN
ST
L
t
I
L(SCr)
I
L(SCp)
I
Heating up may require several milliseconds,
V
bb
-
V
OUT
< 8.3 V typ.
,
V
bb
-
V
OUT
< 8.3 V typ.
Figure 3c: Short circuit while on:
IN
ST
OUT
L
t
V
I
**)
**) current peak approx. 20 ms
Figure 4a: Overtemperature,
Reset if (IN=low) and (
T
j
<
T
jt
)
IN
ST
OUT
J
t
V
T
*) ST goes high , when
V
IN
=low and
T
j
<
T
jt
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
ST
OUT
L
t
V
I
open
t
d(ST)
BTS 542 D2
Semiconductor Group Page 12 13.Nov.95
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
ST
OUT
L
t
V
I
open
normal
normal
t
d(ST OL1)
t
d(ST OL2)
t
d(ST OL1)
= tbd ms typ., t
d(ST OL2)
= tbd ms typ
Figure 6a: Undervoltage:
IN
V
OUT
t
V
bb
ST CMOS
V
V
bb(under)
bb(u rst)
bb(u cp)
V
Figure 6b: Undervoltage restart of charge pump
V
ON
[V]
bb(under)
V
V
bb(u rst)
V
bb(ov er)
V
bb(o rst)
V
bb(u cp)
off
on
off
V
ON(CL)
V
bb
V
on
V
bb
[V]
charge pump starts at
V
bb(ucp)
=6.5 V typ.
Figure 7a: Overvoltage:
IN
V
OUT
t
V
bb
ST
ON(CL)
V
V
bb(over)
V
bb(o rst)
BTS 542 D2
Semiconductor Group Page 13 13.Nov.95
Package and Ordering Code
All dimensions in mm
Standard TO-218AB/5 Ordering code
BTS 542 D2 Q67060-S6950-A2
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