Siemens BTS442D2 Datasheet

PROFET® BTS 442 D2

Semiconductor Group 1 04.96

Smart Highside Power Switch

Features

•

Overload protection

•

Current limitation

•

Short-circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

1

)

•

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

•

CMOS diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of

V

bb

protection

2)

•

Electrostatic discharge (ESD) protection

Application

•

µC compatible power switch with diagnostic

feedback for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

•

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions.

+ V

bb

IN

ST

Signal GND

ESD

PROFET



OUT

GND

Logic

Voltage

sensor

Voltage

source

Open load

detection

Short circuit

detection

Charge pump

Level shifter

Temperature

sensor

Rectifier

Limit for

unclamped

ind. loads

Gate

protection

Current

limit

2

4

1

3

5

Load GND

Load

V

Logic

Overvoltage

protection

R

bb

1)

No external components required, reverse load current limited by connected load.

2)

Additional external diode required for charged inductive loads

Product Summary

Overvoltage protection

V

bb(AZ

)

63 V

Operating voltage

V

bb(on

)

4.5 ... 42 V

On-state resistance

R

ON

18

m

Ω

Load current (ISO)

I

L(ISO

)

21 A

Current limitation

I

L(SCr

)

70 A

TO-220AB/5

5

Standard

1

5

Straight leads

1

5

SMD

BTS 442 D2

Semiconductor Group 2

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3Vbb+ Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

(Load, L)

O Output to the load

Maximum Ratings

at

T

j

= 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3)

V

bb

63 V

Load dump protection

V

LoadDump

=

U

A

+

V

s

,

U

A

= 13.5 V

R

I

= 2 Ω,

R

L

= 1.1 Ω,

t

d

= 200 ms, IN= low or high

V

Load dump

3

)

80 V

Load current (Short-circuit current, see page 4)

I

L

self-limited A Operating temperature range Storage temperature range

T

j

T

stg

-40 ...+150

-55 ...+150

°C

Power dissipation (DC)

P

tot

167 W

Inductive load switch-off energy dissipation, single pulse

T

j

=150 °C:

E

AS

2.1 J

Electrostatic discharge capability (ESD

)

(Human Body Model)

V

ESD

2.0 kV

Input voltage (DC)

V

IN

-0.5 ... +6 V Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6...

I

IN

I

ST

±5.0 ±5.0

mA

Thermal resistance chip - case:

junction - ambient (free air):

R

thJC

R

thJA

≤ 0.75

≤ 75

K/W

SMD version, device on pcb4): ≤ tbd

3)

V

Load dump

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

4

)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

2

(one layer, 70µm thick) copper area for V

bb

connection. PCB is vertical without blown air.

BTS 442 D2

Semiconductor Group 3

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at

T

j

= 25 °C,

V

bb

= 12 V unless otherwise specified

min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

I

L

= 5 A

T

j

=25 °C:

T

j

=150 °C:

R

ON

-- 15 28

18 35

mΩ

Nominal load current (pin 3 to 5) ISO Proposal:

V

ON

= 0.5 V,

T

C

= 85 °C

I

L(ISO)

17 21 -- A

Output current (pin 5) while GND disconnected or

GND pulled up,

V

IN

= 0, see diagram page 7,

T

j

=-40...+150°C

I

L(GNDhigh)

-- -- 1 mA

Turn-on time to 90%

V

OUT

:

Turn-off time to 10%

V

OUT

:

R

L

= 12 Ω

,

T

j

=-40...+150°C

t

on

t

off

100

10

--

350 130

µs

Slew rate on 10 to 30%

V

OUT

,

R

L

= 12 Ω

,

T

j

=-40...+150°C

dV /dt

on

0.2 -- 2 V/µs

Slew rate off 70 to 40%

V

OUT

,

R

L

= 12 Ω

,

T

j

=-40...+150°C

-dV/dt

off

0.4 -- 5 V/µs

Operating Parameters

Operating voltage

5

)

T

j

=-40...+150°C:

V

bb(on)

4.5 -- 42 V

Undervoltage shutdown

T

j

=-40...+150°C:

V

bb(under)

2.4 -- 4.5 V

Undervoltage restart

T

j

=-40...+150°C:

V

bb(u rst)

-- -- 4.5 V

Undervoltage restart of charge pump see diagram page 12

T

j

=-40...+150°C:

V

bb(ucp)

-- 6.5 7.5 V

Undervoltage hysteresis

∆

V

bb(under)

=

V

bb(u rst)

-

V

bb(under)

∆

V

bb(under)

-- 0.2 -- V

Overvoltage shutdown

T

j

=-40...+150°C:

V

bb(over)

42 -- 52 V

Overvoltage restart

T

j

=-40...+150°C:

V

bb(o rst)

42 -- -- V

Overvoltage hysteresis

T

j

=-40...+150°C: ∆

V

bb(over)

-- 0.2 -- V

Overvoltage protection

6

)

T

j

=-40°C:

I

bb

=40 mA

T

j

=25...+150°C:

V

bb(AZ)

60 63

--

67

-- V

Standby current (pin 3)

T

j

=-40...+25°C

:

V

IN

=0, IST=0

,

T

j

=150°C:

I

bb(off)

--

12 18

25 60

µA

Leakage output current (included in

I

bb(off

)

V

IN

=0

I

L(off)

-- 6 -- µA

Operating current (Pin 1)7),

V

IN

=5 V

I

GND

-- 1.1 -- mA

5

)

At supply voltage increase up to

V

bb

= 6.5 V typ without charge pump,

V

OUT

≈

V

bb

- 2 V

6)

see also

V

ON(CL)

in table of protection functions and circuit diagram page 7. Meassured without load

.

7

)

Add

I

ST

, if

I

ST

> 0, add

I

IN

, if

V

IN

>5.5 V

BTS 442 D2

Parameter and Conditions Symbol Values Unit

at

T

j

= 25 °C,

V

bb

= 12 V unless otherwise specified

min typ max

Semiconductor Group 4

Protection Functions

Initial peak short circuit current limit (pin 3 to 5)

8

)

,

( max 400 µs if

V

ON

>

V

ON(SC)

)

I

L(SCp)

T

j

=-40°C:

T

j

=25°C:

T

j

=+150°C:

--

45

--

95

--

140

--

A

Repetitive short circuit current limit

I

L(SCr)

T

j

=

T

jt

(see timing diagrams, page 10)

30 70 -- A

Short circuit shutdown delay after input pos. slope

V

ON

>

V

ON(SC)

,

T

j

=-40..+150°C:

min value valid only, if input "low" time exceeds 30 µs

t

d(SC)

80 -- 400

µ

s

Output clamp (inductive load switch off) at

V

OUT

=

V

bb

-

V

ON(CL)

,

I

L

= 30 mA

V

ON(CL)

-- 58 -- V

Short circuit shutdown detection voltage (pin 3 to 5)

V

ON(SC)

-- 8.3 -- V

Thermal overload trip temperature

T

jt

150 -- -- °C

Thermal hysteresis

∆T

jt

-- 10 -- K

Inductive load switch-off energy dissipation9),

T

j Start

= 150 °C, single pulse

V

bb

= 12 V:

V

bb

= 24 V:

E

AS

E

Load12

E

Load24

-- -- 2.1

1.7

1.2

J

Reverse battery (pin 3 to 1)

10

)

-

V

bb

-- -- 32 V

Integrated resistor in

V

bb

line

R

bb

-- 120 --

Ω

Diagnostic Characteristics

Open load detection current

T

j

=-40 °C

:

(on-condition)

T

j

=25..150°C:

I

L (OL)

2 2

----1900 1500

mA

8

)

Short circuit current limit for max. duration of t

d(SC) max

=400 µs, prior to shutdown

9)

While demagnetizing load inductance, dissipated energy in PROFET is

E

AS

= ∫

V

ON(CL)

*

i

L

(t) dt, approx.

E

AS

= 1/

2

*

L

*

I

2 L

* (

V

ON(CL)

V

ON(CL)

-

V

bb

), see diagram page 8

10

)

Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current I

GND

of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under

these condition is dependent on the size of the heatsink. Reverse I

GND

can be reduced by an additional external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

Siemens BTS442D2 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual