Siemens BTS432I2 Datasheet

Smart Highside Power Switch

)

PROFET® BTS 432 I2

Features

•

Load dump and reverse battery protection

•

Clamp of negative voltage at output

•

Short-circuit protection

•

Current limitation

•

Thermal shutdown

•

Diagnostic feedback

•

Open load detection in OFF-state

•

CMOS compatible input

•

Electrostatic discharge (ESD) protection

•

Loss of ground and loss of V

•

Overvoltage protection

•

Undervoltage and overvoltage shutdown with auto-restart and hysteresis

protection

bb

1

)

2)

Product Summary

V

Load dump

V

-

bb

V

bb (operation

V

bb (reverse

R

ON

I

L(SCp

I

L(SCr

I

L(ISO

Avalanche Clamp 58 V

OUT

80 V

4.5 ... 42 V

-32 V 38

42 A 33 A 11 A

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

•

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions.

m

Ω

5

R

bb

Voltage

source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Open load

detection

Short circuit

Gate

protection

Limit for

ind. loads

detection

Temperature

sensor

+ V

OUT

PROFET



bb

3

5

Load

1

Signal GND

Load GND

1)

No external components required, reverse load current limited by connected load.

2)

Additional external diode required for charged inductive loads

Semiconductor Group 1 04.96

BTS 432 I2

)

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3Vbb+ Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

O Output to the load

(Load, L)

Maximum Ratings

at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Load dump protection

R

= 2 Ω,

I

R

= 1.1 Ω,

L

V

LoadDump

t

= 200 ms, IN= low or high

d

=

U

+

V

,

A

U

s

= 13.5 V

A

Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC)

V V

I T T P

bb

)

3

s

L

j stg

tot

self-limited A

-40 ...+150

-55 ...+150

63 V

66.5 V

°C

125 W

Inductive load switch-off energy dissipation, single pulse

Electrostatic discharge capability (ESD

T

=150 °C:

j

E V

AS

ESD

1.7 J

2.0 kV

(Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6...

V I I

IN ST

IN

-0.5 ... +6 V ±5.0

mA

±5.0

Thermal resistance chip - case:

junction - ambient (free air):

R R

thJC thJA

SMD version, device on pcb4): ≤ tbd

3)

VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839

)

4

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air.

2

(one layer, 70µm thick) copper area for V

Semiconductor Group 2

≤ 1

≤ 75

K/W

bb

BTS 432 I2

j

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C,

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

V

= 12 V unless otherwise specified

bb

min typ max

IL = 2 A

T

=25 °C:

j

T

=150 °C:

j

Nominal load current (pin 3 to 5) ISO Proposal:

V

ON

= 0.5 V,

T

= 85 °C

C

Output current (pin 5) while GND disconnected or

GND pulled up, VIN= 0, see diagram page 7,

T

=-40...+150°C Turn-on time to 90% Turn-off time to 10%

R

= 12 Ω

L

T

=-40...+150°C

,

j

V V

OUT OUT

Slew rate on 10 to 30%

OUT

R

,

= 12 Ω

L

T

=-40...+150°C

,

j

V

Slew rate off 70 to 40%

V

OUT

,

R

L

= 12 Ω

T

=-40...+150°C

,

j

Operating Parameters

)

Operating voltage

5

Undervoltage shutdown Undervoltage restart

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

Undervoltage restart of charge pump see diagram page 12

T

=-40...+150°C:

j

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

=40 mA

bb

=

V

bb(u rst)

-

V

bb(under)

)

6

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C: ∆

j

T

=-40°C:

j

T

=25...+150°C:

j

Standby current (pin 3)

=5 V

T

=-40...+25°C

j

T

=150°C:

j

VIN=0, IST=0

,

Operating current (Pin 1)7),

V

IN

: :

:

R

I

t t

dV /dt

-dV/dt

V V V V

∆

V V

V

I

ON

L(ISO)

L(GNDhigh)

on off

on

off

bb(on) bb(under) bb(u rst) bb(ucp)

V

bb(under)

bb(over) bb(o rst)

V

bb(over)

bb(AZ)

bb(off)

GND

-- 30 55

38 70

mΩ

911 --A

-- -- 1 mA

50 10

160

--

300

80

µs

0.4 -- 2.5 V/µs

1--5V/µs

4.5 -- 42 V

2.4 -- 4.5 V

-- -- 4.5 V

-- 6.5 7.5 V

-- 0.2 -- V

42 -- 52 V 42 -- -- V

-- 0.2 -- V

60 63

--

67

-- V

µA

--

40 50

70

110

-- 1.1 -- mA

)

5

At supply voltage increase up to

6)

)

7

see also Add

V

I

, if

ST

in table of protection functions and circuit diagram page 7. Meassured without load

ON(CL)

I

> 0, add

ST

V

= 6.5 V typ without charge pump,

bb

I

V

, if

IN

>5.5 V

IN

V

OUT

≈

V

- 2 V

bb

.

Semiconductor Group 3

BTS 432 I2

j

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C,

Protection Functions

Initial peak short circuit current limit (pin 3 to 5) ( max 400 µs if VON > V

Repetitive short circuit current limit

T

j

Short circuit shutdown delay after input pos. slope

V

>

ON

min value valid only, if input "low" time exceeds 30 µs

Output clamp (inductive load switch off) at V

OUT

Short circuit shutdown detection voltage (pin 3 to 5)

Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation9),

T

j Start

Reverse battery (pin 3 to 1) Integrated resistor in Vbb line

V

= 12 V unless otherwise specified

bb

ON(SC)

=

T

(see timing diagrams, page 10)

jt

V

= Vbb - V

ON(SC)

,

ON(CL)

I

= 30 mA

,

L

= 150 °C, single pulse

10

min typ max

)

8

,

I

L(SCp)

)

=-40°C:

T

=25°C:

T

=+150°C:

j

T

I

L(SCr)

--

22

--

42

--

72

A

--

20 33 -- A

T

=-40..+150°C:

j

)

V V

bb bb

= 12 V: = 24 V:

t

d(SC)

V

ON(CL)

V

ON(SC)

T

jt

∆T E

AS

E

Load12

E

Load24

-

V

bb

R

bb

80 -- 400

µ

-- 58 -- V

-- 8.3 -- V

150 -- -- °C

jt

-- 10 -- K

-- -- 1.7

1.3

1.0

-- -- 32 V

-- 120 --

Ω

s

J

Diagnostic Characteristics

Open load detection current Open load detection voltage

)

8

Short circuit current limit for max. duration of 400 µs, prior to shutdown (see t

9)

While demagnetizing load inductance, dissipated energy in PROFET is

V

2

= 1/

E

AS

)

10

Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current I these condition is dependent on the size of the heatsink. Reverse I external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

2

*

L

I

L

ON(CL)

* (

V

ON(CL)

of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under

GND

), see diagram page 8

-

V

bb

=-40..150°C:

T

j

I

L(off)

V

OUT(OL)

can be reduced by an additional

GND

10 30 60

234V

page 4)

d(SC)

= ∫

E

AS

V

ON(CL)

*

(t) dt, approx.

i

L

A

µ

Semiconductor Group 4

BTS 432 I2

)

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C,

Input and Status Feedback

Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis

Off state input current (pin 2)

V

= 12 V unless otherwise specified

bb

)

11

T T

=-40..+150°C:

j

=-40..+150°C:

j

V

= 0.4 V:

IN

V

IN(T+)

V

IN(T-)

∆

V

I

IN(off)

IN(T)

min typ max

1.5 -- 2.4 V

1.0 -- -- V

-- 0.5 -- V

1--30

µ

A

On state input current (pin 2)

Delay time for status with open load

after Input neg. slope (see diagram page 12)

Status invalid after positive input slope (short circuit)

T

=-40 ... +150°C:

j

Status output (CMOS

T

=-40...+150°C,

j

T

=-40...+150°C,

j

Max. status current for valid status output,

T

=-40...+150°C

j

I

ST

current source

current sink

V

= 3.5 V:

IN

I

= - 50 µA:

ST

= +1.6 mA:

(out):

(in) :

I

IN(on)

t

d(ST OL3)

t

d(ST SC)

V

ST(high)

V

ST(low)

-I

ST

13)

+I

ST

12

10 25 50

40 -- 300 80 200 400

)

4.4

--

5.1

--

6.5

0.4

0.25

1.6

µ

A

µ µ

V

mA

s s

11)

If a ground resistor R

)

12

VSt

)

13

No current sink capability during undervoltage shutdown

high

V

≈

during undervoltage shutdown

bb

is used, add the voltage drop across this resistor.

GND

Semiconductor Group 5