Siemens BSS63, BCX42 Datasheet
PNP Silicon AF and Switching Transistors BCX 42
BSS 63
● For general AF applications
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: BCX 41, BSS 64 (NPN)
Type Ordering Code
Marking
(tape and reel)
BCX 42
BSS 63
DKs
BMs
Q62702-C1485
Q62702-S534
Pin Configuration
1 2 3
B E C
Package
SOT-23
Maximum Ratings
Parameter Symbol Values Unit
BSS 63 BCX 42
Collector-emitter voltage V
Collector-base voltage VCB0 110
Emitter-base voltage V
Collector current I
Peak collector current I
Base current I
Peak base current I
Total power dissipation, T
S =79˚C Ptot 330 mW
CE0 100 V
125
125
EB0 5
C 800 mA
CM 1A
B 100 mA
BM 200
5
1)
Junction temperature T
Storage temperature range T
j 150 ˚C
stg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 285 K/W
Junction - soldering point Rth JS ≤ 215
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
I
)
Pul
A = 25 ˚C, unless otherwise specified.
at T
BCX 42
BSS 63
Parameter Symbol
UnitValues
min. typ. max.
DC characteristics
(BR)CE0
V
C = 10 mA BCX 42
BSS 63
1
Collector-base breakdown voltage
C = 100 µA BCX 42
Emitter-base breakdown voltage, I
Collector cutoff current
VCB = 80 V BSS 63
CB = 100 V BCX 42
V
CB =80V,TA = 150 ˚C BSS 63
V
CB = 100 V, TA = 150 ˚C BCX 42
V
)
(BR)CB0
V
BSS 63
E = 10 µA V(BR)EB0 5––
I
CB0
125
100
125
110
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
100
20
20
ICE0
CE = 100 V
V
A = 85 ˚C BCX 42
T
A = 125 ˚C BCX 42
T
–
–
–
–
10
75
VCollector-emitter breakdown voltage
nA
nA
µA
µA
µACollector cutoff current
EB = 4 V IEB0 – – 100
1
)
C = 100 µA, VCE = 1 V BCX 42
C = 10 mA, VCE = 5 V BSS 63
C = 20 mA, VCE = 5 V BSS 63
C = 100 mA, VCE = 1 V BCX 42
C = 200 mA, VCE = 1 V BCX 42
1
)
C = 300 mA, IB = 30 mA BCX 42
C = 25 mA, IB = 2.5 mA BSS 63
C = 75 mA, IB = 7.5 mA BSS 63
1
Base-emitter saturation voltage
C = 300 mA, IB = 30 mA BCX 42
)
FE
h
25
30
30
63
40
–
–
–
–
–
VCEsat
–
–
–
V
BEsat – – 1.4
–
–
–
–
–
–
–
–
0.9
0.25
0.9
nAEmitter cutoff current, V
–DC current gain
VCollector-emitter saturation voltage
AC characteristics
C = 20 mA, VCE = 5 V, f = 20 MHz
CB = 10 V, f = 1 MHz
V
1
se test: t ≤ 300 µs, D = 2 %
f
T – 150 –
C
obo –12–
MHzTransition frequency
pFOutput capacitance
Semiconductor Group 2
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